APPLICATION NOTE
SUBJECT: RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD04HMS2
- Frequency: 135-175MHz
- Typical input power: 0.2W
- Typical output power: 5.5W
- Quiescent Current: 100mA
Silicon RF Power Semiconductors
Document NO. AN-VHF-051-B
Date : 30thSep. 2010
Rev. date : 7thFeb. 2011
Prepared : H.Sakairi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating Current: 0.65A
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
RF IN RFOUT
PCB L=80mm W=55mm
Application Note for Silicon RF Power Semiconductors
1/23
Contents
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-051-B-
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Component List and Standard Deliverable -----------------------------------------
4. Thermal Design of Heat Sink ------------------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=12.5V) ---------------------------------------------
5-2. RF Power vs. (Vds=12.5V) -------------------------------------------
5-3. Drain Quiescent Current vs. (Vds=12.5V) ------------------------
5-4. DC Power Supply vs. (Idq=0.1A) ----------------------------------
5-5. Frequency vs. (Vds=9.1V) --------------------------------------5-6. RF Power vs. (Vds=9.1V) --------------------------------------5-7. Drain Quiescent Current vs. (Vds=9.1V) -------------------
3
4
5
6
7
7
8
12
14
17
18
22
Application Note for Silicon RF Power Semiconductors
2/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
1. Equivalent Circuitry
- AN-VHF-051-B-
RF-out
C9
7.5mm
C14C12
C13
L4
C8
Vdd
Vgg
WW
21mm
21mm
C11
C10
L5
C7
RD04HMS2
R1
5.5mm
3mm 2mm
C6
4.5mm
L3
3mm
f=135MHz
5.5mm
C5
C4
R2
4mm
L2
1.5mm
4mm
W:Line width=1.0mm
Note:Board material- Glass-Epoxy Substrate
C3
0.5mm8mm
L1
Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm
0.5mm
C2
C1
RF-in
Application Note for Silicon RF Power Semiconductors
3/23
2. PCB Layout
TOP VIEW
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-051-B-
BOARD OUTLINE: 80.0*55.0(mm)
MATERIAL : FR-4<R1705>
THICKNESS : 0.8(mm)
TOP VIEW ( Parts mounting )
4007C
100p 100p
CUT CUT
27p 30p
30p
1000p
1000p
4.7Kohm
2312A
47ohm
CUT
36p
4005C
CUT
1000p
1000p
39p
39p
4007C
22u
4006C
CUT
24p
Application Note for Silicon RF Power Semiconductors
4/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
Evaluation Board assembled with all the component
PCB (raw board)
- AN-VHF-051-B-
3. Component List and Standard Deliverable
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD04HMS2 1 Mitsubishi Electric Corporation
C 1 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 2 27 pF 2012 50V GRM2162C1H270JZ01D 1 MURATA MANUFACTURING CO.
C 3 30 pF 2012 50V GRM2162C1H300JZ01D 1 MURATA MANUFACTURING CO.
C 4 30 pF 2012 50V GRM2162C1H300JZ01D 1 MURATA MANUFACTURING CO.
C 5 36 pF 2012 50V GRM2162C1H360JZ01D 1 MURATA MANUFACTURING CO.
C 6 39 pF 2012 50V GRM2162C1H390JZ01D 1 MURATA MANUFACTURING CO.
C 7 39 pF 2012 50V GRM2162C1H390JZ01D 1 MURATA MANUFACTURING CO.
C 8 24 pF 2012 50V GRM2162C1H240JZ01D 1 MURATA MANUFACTURING CO.
C 9 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO.
C 10 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 11 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 12 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 13 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO.
C 14 22 uF 50V H1002 1 NICHICON CORPORATION
L 1 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YCCORPORATION Co.,Ltd.
L 2 56 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=12 1 YCCORPORATION Co.,Ltd.
L 3 22 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=5 1 YC CORPORATION Co.,Ltd.
L 4 29 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=6 1 YC CORPORATION Co.,Ltd.
L 5 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd.
R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHAELECTRIC CO.
R 2 47 ohm 1608 RPC05N470J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0166 1 Homebuilt
Rc SMA female connector HRM-300-118S 2 HIROSEELECTRIC CO.,LTD
Bc 1 Bias connector red color TM-605R 2 MSK Corporation
Bc 2 Bias connector black color TM-605B 2 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Conducting wire 4 Homebuilt
Screw M2 16 * Inductor of Rolling Coil measurement condition : f=100MHz
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
4. Thermal Design of Heat Sink
- AN-VHF-051-B-
Tr
Pb
Pe
Tch
=(Pout/Efficiency-Pout+Pin) x R
(delta)
Also, operating Tj (“Tj
Therefore T
T
Pb bottom-air
Pb bottom-air
=“Tj
(op)
Junction point of MOSFET chip
R
th(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom)
=5.0 (deg. C./W)
th(ch-Pb bottom)
”)=120 (deg. C.), in case of RD series that Tch
(op)
=(4W/50%-4W+0.2) x 5.0 = 21 (deg. C.)
= 150 (deg. C.)
(max)
as delta temperature between Pb bottom and the ambient 60 deg. C.
”- Tch
(delta)
- Ta
(60deg.C.)
=120-21-60=39 (deg. C.)
(in this package)
In terms of long-term reliability, “Tj
” has to be kept less than 120 deg. C. i.e. T
(op)
Pb bottom-air
has to be less than 39 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pb bottom-air)=TPb bottom-air
/(Pout/Efficiency-Pout+Pin)=39/(4W/50%-4W+0.2)= 9.3 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 9.3 deg. C./W.
Application Note for Silicon RF Power Semiconductors
6/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
(MHz)
(V)
(dBm)
(W)
(dBm)
(W)
(dB)
(A)
(%)
(%)
(dB)
135
2.66
23.1
0.2
37.6
5.8
14.6
0.64
70.1
72.7
-8.2
140
2.66
23.0
0.2
37.8
6.0
14.8
0.63
74.2
76.8
-9.7
145
2.66
23.0
0.2
37.8
6.1
14.8
0.61
76.7
79.4
-10.9
150
2.66
23.1
0.2
37.8
6.1
14.7
0.60
78.0
80.7
-11.6
155
2.66
23.0
0.2
37.8
6.0
14.7
0.58
80.6
83.4
-11.8
160
2.66
23.0
0.2
37.8
6.0
14.7
0.58
80.1
82.9
-11.9
165
2.66
23.1
0.2
37.8
6.0
14.7
0.58
80.1
82.9
-12.5
170
2.66
23.0
0.2
37.8
6.0
14.8
0.58
80.5
83.3
-13.8
175
2.66
23.1
0.2
37.8
6.1
14.8
0.59
80.0
82.7
-16.3
180
2.66
23.0
0.2
37.9
6.1
14.9
0.59
80.4
83.1
-17.7
- AN-VHF-051-B-
5. Typical Performance
5-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
(Vds=12.5V)
Ta=+25deg.C
Vds=12.5V, Idq=0.1A, Pin=0.2W
18
16
14
12
10
8
6
Pout(W) , Gp(dB)
4
2
0
130 135 140 145 150 155 160 165 170 175 180
ηD
Gp
Pout
f (MHz)
90
80
70
60
50
40
30
20
10
0
Drain Effi(%)
Ta=+25deg.C
Vds=12.5V, Idq=0.1A, Pin=0.2W
40
Pout
Idd
30
Pout(dBm)
20
I.R.L.
10
130 135 140 145 150 155 160 165 170 175 180
f (MHz)
Ta=+25deg. C., Vds=12.5V, Idq=0.1A, Pin=0.2W
Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.
130 2.66
Pin Pout
23.0 0.2 37.4 5.4
14.3 0.64 65.6 68.1 -6.8
5
0
-5
-10
Input R. L. (dB) , Idd(A)
-15
-20
Application Note for Silicon RF Power Semiconductors
7/23
5-2. RF Power vs.
175MHz
175MHz
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-051-B-
INPUT POWER (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
7
6
5
4
3
155MHz
135MHz
2
Pout , OUTPUT POWER(W)
1
0
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
POWER GAIN (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
25
24
23
22
21
20
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
10
0 1 2 3 4 5 6
Pout, OUTPUT POWER(W)
155MHz
135MHz
175MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
40
35
155MHz
30
135MHz
25
Pout , OUTPUT POWER(dBm)
20
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
25
24
23
22
21
20
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
10
22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER(dBm)
155MHz
135MHz
175MHz
Application Note for Silicon RF Power Semiconductors
8/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
- AN-VHF-051-B-
DRAIN EFFICIENCY (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
90
80
175MHz
70
60
50
155MHz
135MHz
40
30
ηD, DRAIN EFFICIENCY(%)
20
10
0 1 2 3 4 5 6
Pout, OUTPUT POWER(W)
DRAIN CURRENT (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0.7
90
80
70
60
175MHz
50
40
155MHz
135MHz
30
ηD, DRAIN EFFICIENCY(%)
20
10
22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0.7
0.6
0.5
0.4
135MHz
175MHz
0.3
155MHz
0.2
Idd, DRAIN CURRENT(A)
0.1
0
0 1 2 3 4 5 6
Pout, OUTPUT POWER(W)
0.6
0.5
135MHz
0.4
0.3
0.2
Idd, DRAIN CURRENT(A)
155MHz
0.1
0
22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER(dBm)
175MHz
Application Note for Silicon RF Power Semiconductors
9/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
- AN-VHF-051-B-
INPUT RETURN LOSS (Vds=12.5V)
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0
-5
-10
175MHz
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
0 1 2 3 4 5 6
Pout, OUTPUT POWER(W)
135MHz
155MHz
Ta=+25deg. C., Vds=12.5V, Idq=0.1A
135MHz
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.66 0.0 0.00 23.3 0.2 23.3 0.14 12.3 12.4 -10.0
2.66 1.0 0.00 24.2 0.3 23.2 0.15 14.1 14.1 -9.9
2.66 2.0 0.00 25.2 0.3 23.2 0.16 16.0 16.1 -9.8
2.66 3.0 0.00 26.1 0.4 23.1 0.18 18.6 18.7 -9.7
2.66 4.0 0.00 27.1 0.5 23.0 0.20 20.2 20.3 -9.7
2.66 5.0 0.00 28.0 0.6 23.0 0.21 23.6 23.8 -9.6
2.66 6.0 0.00 29.0 0.8 23.0 0.24 26.6 26.8 -9.6
2.66 7.0 0.01 30.0 1.0 23.0 0.28 28.8 29.0 -9.6
2.66 8.0 0.01 31.0 1.2 22.9 0.30 33.0 33.2 -9.6
2.66 9.0 0.01 31.9 1.5 22.9 0.34 36.5 36.7 -9.7
2.66 10.0 0.01 32.8 1.9 22.8 0.38 40.6 40.8 -9.9
2.66 11.0 0.01 33.7 2.3 22.7 0.41 44.6 44.9 -10.1
2.66 11.9 0.02 34.4 2.7 22.4 0.45 48.5 48.7 -10.2
2.66 12.9 0.02 35.0 3.1 22.0 0.48 52.6 52.9 -10.1
2.66 14.0 0.03 35.5 3.5 21.5 0.50 56.1 56.5 -9.9
2.66 15.0 0.03 35.9 3.9 20.9 0.53 58.9 59.4 -9.6
2.66 16.0 0.04 36.3 4.2 20.2 0.55 61.0 61.6 -9.3
2.66 17.1 0.05 36.6 4.6 19.5 0.56 64.1 64.8 -9.0
2.66 18.1 0.06 36.9 4.9 18.8 0.59 65.1 66.0 -8.8
2.66 19.1 0.08 37.1 5.1 18.0 0.60 67.0 68.1 -8.6
2.66 20.1 0.10 37.3 5.3 17.1 0.60 69.7 71.1 -8.5
2.66 21.2 0.13 37.4 5.5 16.3 0.61 70.5 72.2 -8.3
2.66 22.2 0.17 37.6 5.7 15.3 0.63 70.8 73.0 -8.3
2.66 23.2 0.21 37.7 5.8 14.4 0.64 70.7 73.3 -8.2
2.66 24.2 0.26 37.8 6.0 13.5 0.64 71.4 74.7 -8.1
2.66 25.2 0.33 37.8 6.0 12.6 0.65 70.2 74.3 -8.1
Ta=+25deg.C,Vds=12.5V, Idq=0.1A
0
-5
135MHz
-10
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
22 24 26 28 30 32 34 36 38
175MHz 155MHz
Pout, OUTPUT POWER(dBm)
PoutPin
Application Note for Silicon RF Power Semiconductors
10/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
VggGpID(RF)
ηadd
ηD
I.R.L.
(V)
(dBm)
(W)
(dBm)
(W)
(dB)
(A)
(%)
(%)
(dB)
- AN-VHF-051-B-
155MHz
Pin
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.66 0.0 0.00 23.4 0.2 23.5 0.14 12.7 12.8 -11.0
2.66 1.0 0.00 24.4 0.3 23.4 0.14 15.9 16.0 -11.0
2.66 2.0 0.00 25.4 0.3 23.4 0.15 18.4 18.5 -10.9
2.66 3.0 0.00 26.4 0.4 23.4 0.18 19.8 19.9 -10.8
2.66 4.0 0.00 27.4 0.5 23.4 0.19 23.1 23.2 -10.7
2.66 5.0 0.00 28.4 0.7 23.4 0.20 27.3 27.4 -10.6
2.66 6.0 0.00 29.4 0.9 23.4 0.23 30.6 30.8 -10.6
2.66 7.0 0.01 30.4 1.1 23.4 0.25 34.8 34.9 -10.5
2.66 8.0 0.01 31.4 1.4 23.3 0.29 37.7 37.9 -10.5
2.66 9.0 0.01 32.3 1.7 23.3 0.31 42.9 43.1 -10.5
2.66 10.0 0.01 33.2 2.1 23.2 0.35 47.1 47.3 -10.6
2.66 11.0 0.01 34.0 2.5 23.0 0.39 51.4 51.7 -10.6
2.66 12.0 0.02 34.7 3.0 22.8 0.41 57.0 57.3 -10.7
2.66 13.0 0.02 35.3 3.4 22.4 0.44 61.7 62.0 -10.8
2.66 14.0 0.02 35.8 3.8 21.9 0.46 65.6 66.0 -11.0
2.66 14.9 0.03 36.2 4.2 21.3 0.49 68.3 68.8 -11.1
2.66 15.9 0.04 36.6 4.5 20.6 0.50 72.2 72.8 -11.2
2.66 16.9 0.05 36.9 4.9 19.9 0.53 73.2 73.9 -11.3
2.66 17.9 0.06 37.1 5.1 19.2 0.54 75.2 76.1 -11.4
2.66 18.9 0.08 37.3 5.3 18.4 0.55 76.6 77.8 -11.5
2.66 19.9 0.10 37.4 5.5 17.6 0.55 79.3 80.7 -11.6
2.66 20.9 0.12 37.6 5.7 16.7 0.56 79.5 81.2 -11.6
2.66 21.9 0.15 37.7 5.8 15.8 0.58 79.2 81.4 -11.7
2.66 22.8 0.19 37.8 6.0 14.9 0.58 80.4 83.1 -11.8
2.66 23.8 0.24 37.8 6.1 14.0 0.59 79.4 82.7 -11.8
2.66 24.8 0.30 37.9 6.2 13.1 0.59 79.8 83.9 -11.9
Pout
175MHz
Pin
2.66 -0.1 0.00 23.0 0.2 23.1 0.14 11.5 11.6 -11.5
2.66 0.9 0.00 24.0 0.3 23.1 0.14 14.5 14.5 -11.4
2.66 1.9 0.00 25.0 0.3 23.1 0.15 16.7 16.8 -11.4
2.66 2.9 0.00 26.0 0.4 23.1 0.16 19.4 19.5 -11.3
2.66 3.9 0.00 27.0 0.5 23.1 0.18 22.7 22.9 -11.3
2.66 4.9 0.00 28.0 0.6 23.1 0.20 25.2 25.4 -11.2
2.66 5.9 0.00 29.1 0.8 23.2 0.23 28.4 28.6 -11.1
2.66 6.9 0.00 30.1 1.0 23.2 0.25 32.4 32.5 -11.1
2.66 7.9 0.01 31.1 1.3 23.2 0.28 37.0 37.2 -11.0
2.66 8.9 0.01 32.1 1.6 23.2 0.31 41.0 41.2 -11.0
2.66 9.9 0.01 33.0 2.0 23.1 0.34 47.2 47.4 -10.9
2.66 10.9 0.01 33.9 2.5 23.0 0.38 52.2 52.5 -10.9
2.66 11.9 0.02 34.7 2.9 22.7 0.41 56.6 56.9 -10.9
2.66 12.9 0.02 35.3 3.4 22.4 0.44 62.1 62.5 -11.1
2.66 13.9 0.02 35.9 3.9 22.0 0.46 66.5 66.9 -11.4
2.66 14.9 0.03 36.3 4.3 21.4 0.49 69.9 70.4 -11.8
2.66 15.9 0.04 36.7 4.7 20.8 0.51 72.2 72.8 -12.3
2.66 16.8 0.05 37.0 5.0 20.2 0.53 75.1 75.8 -12.8
2.66 17.8 0.06 37.2 5.2 19.4 0.54 77.0 77.9 -13.4
2.66 18.7 0.07 37.4 5.5 18.6 0.55 78.5 79.6 -14.0
2.66 19.7 0.09 37.5 5.6 17.8 0.56 78.9 80.3 -14.6
2.66 20.7 0.12 37.6 5.8 17.0 0.56 80.9 82.5 -15.2
2.66 21.7 0.15 37.7 5.9 16.1 0.58 80.3 82.3 -15.7
2.66 22.6 0.18 37.8 6.0 15.2 0.58 81.3 83.8 -16.2
2.66 23.6 0.23 37.9 6.1 14.2 0.59 80.0 83.1 -16.5
2.66 24.6 0.29 37.9 6.2 13.3 0.59 80.0 83.9 -16.9
Pout
Application Note for Silicon RF Power Semiconductors
11/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
135MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.3
23.0
0.2
36.4
4.4
0.54
65.0
62.0
13.4
-8.8
2.15
0.5
23.0
0.2
36.5
4.5
0.54
65.7
62.8
13.5
-8.8
2.21
1.3
23.0
0.2
36.6
4.6
0.55
66.6
63.7
13.7
-8.8
2.25
2.2
23.0
0.2
36.8
4.7
0.56
67.4
64.5
13.7
-8.9
2.30
3.7
23.0
0.2
36.9
4.9
0.57
68.0
65.2
13.8
-8.9
2.36
6.9
23.0
0.2
37.0
5.0
0.58
68.8
66.0
14.0
-8.9
2.40
11.3
23.0
0.2
37.1
5.1
0.59
69.5
66.8
14.1
-8.9
2.45
17.8
23.0
0.2
37.2
5.2
0.60
70.1
67.4
14.2
-8.9
2.51
31.1
23.0
0.2
37.3
5.4
0.61
71.0
68.3
14.3
-9.0
2.55
44.7
23.0
0.2
37.4
5.5
0.62
71.6
69.0
14.4
-9.0
2.60
62.4
23.0
0.2
37.5
5.6
0.62
72.2
69.6
14.5
-9.0
2.66
94.1
23.0
0.2
37.6
5.8
0.63
72.9
70.3
14.6
-9.0
2.70
123.5
23.0
0.2
37.7
5.9
0.64
73.3
70.8
14.7
-9.0
2.75
158.0
23.0
0.2
37.8
6.0
0.65
73.9
71.4
14.8
-9.1
2.81
210.4
23.0
0.2
37.9
6.1
0.66
74.3
71.9
14.9
-9.1
2.85
254.3
23.0
0.2
37.9
6.2
0.66
74.6
72.2
14.9
-9.1
2.90
301.3
23.0
0.2
38.0
6.3
0.67
74.9
72.5
15.0
-9.1
Pin
Pout
5-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY (Vds=12.5V)
- AN-VHF-051-B-
Pin=0.2W
Ta=+25deg.C,Vds=12.5V
7
175MHz
6
155MHz
5
135MHz
4
Pout , OUTPUT POWER(W)
3
0 100 200 300
IDQ, DRAIN QUIESCENT CURRENT(mA)
Ta=+25deg. C., Vds=12.5V, Pin=0.2W
Vgg Idq
(V) (mA)
Pin=0.2W
Ta=+25deg.C,Vds=12.5V
90
175MHz
80
155MHz
70
135MHz
ηD, DRAIN EFFICIENCY (%)
60
0 100 200 300
IDQ, DRAIN QUIESCENT CURRENT(mA)
Application Note for Silicon RF Power Semiconductors
12/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
155MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.2
23.0
0.2
37.1
5.1
0.52
77.6
74.6
14.1
-10.2
2.15
0.5
23.0
0.2
37.1
5.2
0.53
78.1
75.1
14.1
-10.2
2.21
1.3
23.0
0.2
37.2
5.3
0.54
78.6
75.6
14.2
-10.2
2.25
2.2
23.0
0.2
37.3
5.3
0.54
78.9
76.0
14.3
-10.2
2.30
3.6
23.0
0.2
37.3
5.4
0.55
79.3
76.4
14.3
-10.2
2.36
6.8
23.0
0.2
37.4
5.5
0.55
79.9
77.0
14.4
-10.2
2.40
11.1
23.0
0.2
37.5
5.6
0.56
80.2
77.4
14.5
-10.2
2.45
17.6
23.0
0.2
37.5
5.7
0.56
80.7
77.8
14.5
-10.2
2.51
30.8
23.0
0.2
37.6
5.7
0.57
81.0
78.2
14.6
-10.2
2.55
44.1
23.0
0.2
37.6
5.8
0.57
81.3
78.6
14.7
-10.2
2.60
61.7
23.0
0.2
37.7
5.9
0.58
81.6
78.8
14.7
-10.2
2.66
93.2
23.0
0.2
37.7
5.9
0.58
81.9
79.1
14.7
-10.3
2.70
122.4
23.0
0.2
37.8
6.0
0.58
82.3
79.5
14.8
-10.3
2.75
156.7
23.0
0.2
37.8
6.1
0.59
82.5
79.8
14.8
-10.3
2.81
209.3
23.0
0.2
37.9
6.1
0.59
82.8
80.1
14.9
-10.3
2.85
252.9
23.0
0.2
37.9
6.2
0.60
82.9
80.2
14.9
-10.3
2.90
300.0
23.0
0.2
38.0
6.2
0.60
83.2
80.5
14.9
-10.3
175MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.2
23.0
0.2
37.4
5.4
0.54
80.2
77.2
14.3
-9.7
2.15
0.4
23.0
0.2
37.4
5.5
0.55
80.4
77.5
14.4
-9.8
2.21
1.1
23.0
0.2
37.5
5.6
0.55
80.7
77.8
14.4
-9.8
2.25
2.1
23.0
0.2
37.5
5.6
0.55
81.0
78.1
14.5
-9.8
2.30
3.5
23.0
0.2
37.5
5.7
0.56
81.2
78.4
14.5
-9.8
2.36
6.9
23.0
0.2
37.6
5.7
0.56
81.5
78.7
14.6
-9.8
2.40
11.1
23.0
0.2
37.6
5.8
0.56
81.6
78.8
14.6
-9.8
2.45
17.6
23.0
0.2
37.7
5.8
0.57
81.9
79.1
14.6
-9.8
2.51
30.8
23.0
0.2
37.7
5.9
0.57
82.1
79.3
14.7
-9.8
2.55
44.1
23.0
0.2
37.7
5.9
0.57
82.3
79.5
14.7
-9.9
2.60
61.9
23.0
0.2
37.7
5.9
0.58
82.3
79.5
14.7
-9.9
2.66
93.6
23.0
0.2
37.8
6.0
0.58
82.6
79.8
14.8
-9.9
2.70
122.7
23.0
0.2
37.8
6.0
0.58
82.6
79.9
14.8
-9.9
2.75
157.1
23.0
0.2
37.8
6.1
0.59
82.7
79.9
14.8
-9.9
2.81
209.5
23.0
0.2
37.9
6.1
0.59
82.9
80.1
14.8
-9.9
2.85
253.3
23.0
0.2
37.9
6.1
0.59
83.0
80.2
14.8
-10.0
2.90
300.5
23.0
0.2
37.9
6.2
0.59
83.1
80.4
14.9
-10.0
Pin
Pout
Pin
Pout
- AN-VHF-051-B-
Vgg Idq
(V) (mA)
Vgg Idq
(V) (mA)
Application Note for Silicon RF Power Semiconductors
13/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
5-4. DC Power Supply vs.
OUTPUT POWER and DRAIN EFFICIENCY (Idq=0.1A)
- AN-VHF-051-B-
Pin=0.2W
Ta=+25deg.C, Vgg fixed at Idq=0.1AVds=12.5V
8
6
4
135MHz
2
Pout , OUTPUT POWER(W)
0
4 5 6 7 8 9 10 11 12 13
155MHz
175MHz
VDD, SUPPLY VOLTAGE(V)
DRAIN CURRENT (Idq=0.1A)
Pin=0.2W
Ta=+25deg.C,Vgg fixed at Idq=0.1A Vds=12.5V
Pin=0.2W
Ta=+25deg.C, Vgg fixed at Idq=0.1AVds=12.5V
90
155MHz
80
175MHz
135MHz
70
ηD, DRAIN EFFICIENCY(%)
60
4 5 6 7 8 9 10 11 12 13
VDD, SUPPLY VOLTAGE(V)
0.8
0.6
135MHz
0.4
0.2
Idd, DRAIN CURRENT(A)
175MHz
0
4 5 6 7 8 9 10 11 12 13
VDD, SUPPLY VOLTAGE(V)
155MHz
Application Note for Silicon RF Power Semiconductors
14/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
135MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.67
4.0
0.08
23.0
0.2
28.3
0.7
0.20
83.7
59.1
5.3
-8.8
2.67
4.5
0.08
23.0
0.2
29.3
0.9
0.23
83.5
64.0
6.3
-8.8
2.67
5.0
0.08
23.0
0.2
30.3
1.1
0.26
83.2
67.6
7.3
-8.8
2.67
5.5
0.08
23.0
0.2
31.1
1.3
0.28
82.6
69.7
8.1
-8.8
2.67
6.0
0.08
23.0
0.2
31.8
1.5
0.31
82.2
71.5
8.8
-8.9
2.67
6.5
0.08
23.0
0.2
32.5
1.8
0.34
81.9
72.8
9.5
-8.9
2.67
7.0
0.08
23.0
0.2
33.1
2.1
0.36
81.3
73.4
10.1
-8.9
2.67
7.5
0.09
23.0
0.2
33.7
2.3
0.39
80.6
73.8
10.7
-8.9
2.67
8.0
0.09
23.0
0.2
34.2
2.6
0.41
80.0
74.0
11.2
-8.9
2.67
8.5
0.09
23.0
0.2
34.7
3.0
0.44
79.4
74.0
11.7
-8.9
2.67
9.0
0.09
23.0
0.2
35.2
3.3
0.47
78.7
74.0
12.2
-9.0
2.67
9.5
0.09
23.0
0.2
35.6
3.6
0.49
78.0
73.6
12.6
-9.0
2.67
10.0
0.09
23.0
0.2
36.0
4.0
0.52
77.4
73.5
13.0
-9.0
2.67
10.5
0.10
23.0
0.2
36.4
4.3
0.54
76.5
73.0
13.4
-9.0
2.67
11.0
0.10
23.0
0.2
36.7
4.7
0.56
75.9
72.6
13.7
-9.0
2.67
11.5
0.10
23.0
0.2
37.1
5.1
0.59
75.1
72.1
14.1
-9.0
2.67
12.0
0.10
23.0
0.2
37.4
5.4
0.61
74.4
71.7
14.4
-9.0
2.67
12.5
0.10
23.0
0.2
37.6
5.8
0.63
73.5
70.9
14.6
-9.0
2.67
13.0
0.11
23.0
0.2
37.8
6.0
0.66
70.8
68.4
14.8
-9.0
155MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.67
4.0
0.08
23.0
0.2
27.7
0.6
0.17
85.0
55.8
4.6
-11.2
2.67
4.5
0.08
23.0
0.2
28.7
0.7
0.19
84.9
62.0
5.7
-11.1
2.67
5.0
0.08
23.0
0.2
29.7
0.9
0.22
85.1
66.6
6.6
-11.1
2.67
5.5
0.08
23.0
0.2
30.5
1.1
0.24
85.2
69.9
7.5
-11.1
2.67
6.0
0.08
23.0
0.2
31.3
1.3
0.26
84.9
72.2
8.3
-11.0
2.67
6.5
0.08
23.0
0.2
32.0
1.6
0.29
84.9
74.1
9.0
-11.0
2.67
7.0
0.08
23.0
0.2
32.7
1.8
0.31
84.9
75.7
9.7
-10.9
2.67
7.5
0.09
23.0
0.2
33.3
2.1
0.34
84.9
76.9
10.2
-10.9
2.67
8.0
0.09
23.0
0.2
33.9
2.4
0.36
84.6
77.6
10.8
-10.9
2.67
8.5
0.09
23.0
0.2
34.4
2.7
0.38
84.4
78.2
11.4
-10.8
2.67
9.0
0.09
23.0
0.2
34.9
3.1
0.41
84.3
78.9
11.9
-10.8
2.67
9.5
0.09
23.0
0.2
35.4
3.4
0.43
83.8
79.0
12.4
-10.7
2.67
10.0
0.09
23.0
0.2
35.8
3.8
0.46
84.0
79.6
12.9
-10.7
2.67
10.5
0.10
23.0
0.2
36.3
4.2
0.48
83.6
79.7
13.3
-10.6
2.67
11.0
0.10
23.0
0.2
36.7
4.6
0.51
83.4
79.8
13.7
-10.6
2.67
11.5
0.10
23.0
0.2
37.0
5.1
0.53
82.9
79.6
14.0
-10.5
2.67
12.0
0.10
23.0
0.2
37.4
5.5
0.56
82.6
79.6
14.4
-10.4
2.67
12.5
0.10
23.0
0.2
37.8
6.0
0.58
82.3
79.6
14.7
-10.4
2.67
13.0
0.11
23.0
0.2
38.1
6.4
0.60
82.0
79.4
15.1
-10.4
Pin
Pout
Pin
Pout
Vgg Vdd Idq
(V) (V) (mA)
- AN-VHF-051-B-
Ta=+25deg. C., Idq=0.1A
Vgg Vdd Idq
(V) (V) (mA)
Application Note for Silicon RF Power Semiconductors
15/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
175MHz
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.67
4.0
0.08
23.0
0.2
27.5
0.6
0.17
83.7
53.7
4.4
-11.2
2.67
4.5
0.08
23.0
0.2
28.5
0.7
0.19
84.0
60.3
5.5
-11.1
2.67
5.0
0.08
23.0
0.2
29.5
0.9
0.21
84.1
65.2
6.5
-11.1
2.67
5.5
0.08
23.0
0.2
30.4
1.1
0.23
84.3
68.7
7.3
-11.1
2.67
6.0
0.08
23.0
0.2
31.1
1.3
0.26
84.0
71.0
8.1
-11.0
2.67
6.5
0.08
23.0
0.2
31.9
1.5
0.28
84.2
73.1
8.8
-11.0
2.67
7.0
0.08
23.0
0.2
32.5
1.8
0.30
84.1
74.7
9.5
-10.9
2.67
7.5
0.09
23.0
0.2
33.2
2.1
0.33
84.0
75.8
10.1
-10.9
2.67
8.0
0.09
23.0
0.2
33.7
2.4
0.35
84.1
77.0
10.7
-10.9
2.67
8.5
0.09
23.0
0.2
34.3
2.7
0.38
84.0
77.7
11.3
-10.8
2.67
9.0
0.09
23.0
0.2
34.8
3.0
0.40
84.1
78.5
11.8
-10.8
2.67
9.5
0.09
23.0
0.2
35.3
3.4
0.43
83.8
78.8
12.3
-10.7
2.67
10.0
0.09
23.0
0.2
35.8
3.8
0.45
83.7
79.3
12.7
-10.7
2.67
10.5
0.10
23.0
0.2
36.2
4.2
0.48
83.6
79.6
13.2
-10.6
2.67
11.0
0.10
23.0
0.2
36.6
4.6
0.50
83.5
79.9
13.6
-10.6
2.67
11.5
0.10
23.0
0.2
37.0
5.1
0.53
83.2
79.9
14.0
-10.5
2.67
12.0
0.10
23.0
0.2
37.4
5.5
0.56
83.1
80.1
14.4
-10.4
2.67
12.5
0.10
23.0
0.2
37.8
6.0
0.58
82.8
80.1
14.8
-10.4
2.67
13.0
0.11
23.0
0.2
38.1
6.5
0.61
82.6
80.1
15.1
-10.4
Pin
Pout
Vgg Vdd Idq
(V) (V) (mA)
- AN-VHF-051-B-
Application Note for Silicon RF Power Semiconductors
16/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
(MHz)
(V)
(dBm)
(W)
(dBm)
(W)
(dB)
(A)
(%)
(%)
(dB)
135
2.68
23.0
0.2
35.3
3.4
12.3
0.48
73.5
78.1
-8.2
140
2.68
23.0
0.2
35.3
3.4
12.3
0.46
75.8
80.5
-9.7
145
2.68
23.1
0.2
35.3
3.3
12.2
0.44
79.0
84.1
-10.9
150
2.68
23.1
0.2
35.1
3.3
12.0
0.43
79.2
84.5
-11.7
155
2.68
23.1
0.2
35.0
3.2
12.0
0.41
79.6
85.0
-12.0
160
2.68
23.1
0.2
35.0
3.1
11.9
0.40
80.5
86.1
-12.3
165
2.68
23.0
0.2
34.9
3.1
11.9
0.40
80.2
85.7
-12.9
170
2.68
23.0
0.2
34.9
3.1
11.9
0.40
80.1
85.5
-14.3
175
2.68
23.0
0.2
35.0
3.1
12.0
0.41
78.3
83.6
-17.3
180
2.68
23.1
0.2
35.0
3.1
11.8
0.41
77.8
83.2
-19.9
- AN-VHF-051-B-
5-5. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
(Vds=9.1V)
Ta=+25deg.C
Vds=9.1V, Idq=0.1A, Pin=0.2W
18
16
14
12
10
8
6
Pout(W) , Gp(dB)
4
2
ηD
Gp
Pout
90
80
70
60
50
40
30
20
10
Drain Effi(%)
Ta=+25deg.C
Vds=9.1V, Idq=0.1A, Pin=0.2W
40
30
20
Pout(dBm)
10
Pout
Idd
I.R.L.
10
5
0
-5
-10
-15
-20
-25
Input R. L. (dB) , Idd(A)
0
130 135 140 145 150 155 160 165 170 175 180
f (MHz)
Ta=+25deg. C., Vds=9.1V, Idq=0.1A, Pin=0.2W
Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.
130 2.68
Pin Pout
23.0 0.2 35.2 3.3
0
0
130 135 140 145 150 155 160 165 170 175 180
f (MHz)
-30
12.1 0.48 71.3 76.0 -6.7
Application Note for Silicon RF Power Semiconductors
17/23
5-6. RF Power vs.
175MHz
175MHz
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-051-B-
INPUT POWER (Vds=9.1V)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
4
155MHz
135MHz
3
2
1
Pout , OUTPUT POWER(W)
0
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
POWER GAIN (Vds=9.1V)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
25
24
23
22
21
20
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
10
0 1 2 3 4
175MHz
155MHz
Pout, OUTPUT POWER(W)
135MHz
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
40
135MHz
35
155MHz
30
25
Pout , OUTPUT POWER(dBm)
20
0 5 10 15 20 25
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
25
24
23
22
21
20
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
10
22 24 26 28 30 32 34 36 38
175MHz
Pout, OUTPUT POWER(dBm)
155MHz
135MHz
Application Note for Silicon RF Power Semiconductors
18/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
- AN-VHF-051-B-
DRAIN EFFICIENCY (Vds=9.1V)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
90
80
175MHz
70
60
155MHz
50
40
135MHz
30
ηD, DRAIN EFFICIENCY(%)
20
10
0 1 2 3 4
Pout, OUTPUT POWER(W)
DRAIN CURRENT (Vds=9.1V)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
90
80
70
60
50
40
155MHz
135MHz
30
ηD, DRAIN EFFICIENCY(%)
20
175MHz
10
22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=9.1V,Idq=0.1A
0.5
155MHz
0.4
135MHz
0.3
0.2
Idd, DRAIN CURRENT(A)
0.1
0
0 1 2 3 4
Pout, OUTPUT POWER(W)
175MHz
0.5
0.4
0.3
0.2
Idd, DRAIN CURRENT(A)
0.1
135MHz
175MHz
155MHz
0
22 24 26 28 30 32 34 36 38
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
19/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
- AN-VHF-051-B-
INPUT RETURN LOSS (Vds=9.1V)
Ta=+25deg.C,Vds=9.1V, Idq=0.1A
0
-5
-10
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
0 1 2 3 4
175MHz
155MHz
Pout, OUTPUT POWER(W)
135MHz
Ta=+25deg. C., Vds=9.1V, Idq=0.1A
135MHz
Pin Pout
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.68 -0.1 0.00 23.0 0.2 23.1 0.14 11.5 11.5 -11.0
2.68 0.9 0.00 23.9 0.2 23.0 0.14 14.3 14.3 -10.9
2.68 1.9 0.00 24.9 0.3 22.9 0.15 16.2 16.3 -10.7
2.68 2.9 0.00 25.8 0.4 22.8 0.18 17.3 17.3 -10.6
2.68 3.9 0.00 26.7 0.5 22.8 0.19 19.8 19.9 -10.5
2.68 4.9 0.00 27.7 0.6 22.7 0.20 23.2 23.3 -10.5
2.68 5.9 0.00 28.6 0.7 22.7 0.23 25.7 25.9 -10.5
2.68 6.9 0.00 29.5 0.9 22.6 0.25 28.6 28.7 -10.6
2.68 7.9 0.01 30.4 1.1 22.5 0.28 31.7 31.9 -10.8
2.68 8.9 0.01 31.2 1.3 22.3 0.30 35.0 35.2 -11.0
2.68 9.9 0.01 31.9 1.6 22.0 0.33 38.1 38.4 -11.1
2.68 10.9 0.01 32.5 1.8 21.6 0.35 40.6 40.9 -11.0
2.68 11.9 0.02 33.0 2.0 21.1 0.38 42.5 42.9 -10.7
2.68 12.9 0.02 33.4 2.2 20.5 0.39 45.1 45.5 -10.4
2.68 14.0 0.03 33.8 2.4 19.8 0.40 47.5 48.0 -10.0
2.68 15.0 0.03 34.1 2.6 19.1 0.41 49.2 49.8 -9.6
2.68 16.0 0.04 34.4 2.7 18.3 0.43 50.5 51.3 -9.3
2.68 17.1 0.05 34.6 2.9 17.5 0.44 51.5 52.4 -9.0
2.68 18.1 0.06 34.8 3.0 16.6 0.44 53.5 54.7 -8.8
2.68 19.1 0.08 34.9 3.1 15.8 0.45 53.6 55.1 -8.6
2.68 20.2 0.10 35.0 3.2 14.9 0.45 54.9 56.7 -8.4
2.68 21.2 0.13 35.1 3.3 14.0 0.46 54.2 56.4 -8.3
2.68 22.2 0.17 35.2 3.3 13.0 0.46 54.9 57.7 -8.3
2.68 23.2 0.21 35.3 3.4 12.1 0.48 53.6 57.2 -8.2
2.68 24.2 0.27 35.4 3.5 11.1 0.48 53.7 58.1 -8.1
2.68 25.3 0.34 35.4 3.5 10.2 0.48 53.3 58.9 -8.1
Ta=+25deg.C,Vds=9.1V, Idq=0.1A
0
-5
-10
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
22 24 26 28 30 32 34 36 38
175MHz
135MHz
155MHz
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
20/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
VggGpID(RF)
ηadd
ηD
I.R.L.
VggGpID(RF)
ηadd
ηD
I.R.L.
- AN-VHF-051-B-
155MHz
Pin Pout
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.68 -0.1 0.00 23.0 0.2 23.1 0.13 12.8 12.8 -11.2
2.68 0.9 0.00 24.0 0.3 23.0 0.14 14.4 14.5 -11.1
2.68 2.0 0.00 25.0 0.3 23.0 0.15 16.6 16.7 -11.1
2.68 3.0 0.00 25.9 0.4 23.0 0.16 19.1 19.2 -11.0
2.68 4.0 0.00 26.9 0.5 22.9 0.18 22.3 22.4 -10.9
2.68 5.0 0.00 27.9 0.6 22.9 0.19 25.9 26.1 -10.8
2.68 6.0 0.00 28.8 0.8 22.8 0.21 28.5 28.7 -10.8
2.68 7.0 0.01 29.7 0.9 22.7 0.24 31.5 31.7 -10.8
2.68 8.0 0.01 30.6 1.1 22.6 0.25 36.4 36.6 -10.8
2.68 8.9 0.01 31.3 1.4 22.4 0.28 39.2 39.4 -10.9
2.68 9.9 0.01 32.0 1.6 22.1 0.30 42.2 42.5 -11.0
2.68 10.9 0.01 32.6 1.8 21.7 0.31 46.3 46.6 -11.1
2.68 11.9 0.02 33.1 2.0 21.2 0.34 48.0 48.3 -11.3
2.68 12.9 0.02 33.5 2.2 20.6 0.35 50.7 51.2 -11.5
2.68 13.9 0.02 33.8 2.4 19.9 0.36 52.6 53.1 -11.7
2.68 14.9 0.03 34.1 2.6 19.2 0.36 55.7 56.4 -11.8
2.68 15.9 0.04 34.3 2.7 18.4 0.38 56.5 57.3 -11.9
2.68 16.9 0.05 34.5 2.8 17.6 0.39 56.6 57.6 -12.0
2.68 17.9 0.06 34.6 2.9 16.7 0.39 58.3 59.6 -12.0
2.68 18.9 0.08 34.7 3.0 15.9 0.40 57.8 59.3 -12.1
2.68 19.8 0.10 34.8 3.0 15.0 0.40 58.7 60.7 -12.1
2.68 20.8 0.12 34.9 3.1 14.1 0.40 59.4 61.8 -12.0
2.68 21.8 0.15 35.0 3.1 13.1 0.41 57.9 60.8 -12.1
2.68 22.8 0.19 35.0 3.2 12.2 0.41 57.8 61.5 -12.0
2.68 23.8 0.24 35.1 3.2 11.3 0.41 57.6 62.3 -12.0
2.68 24.8 0.30 35.1 3.2 10.3 0.41 57.0 62.8 -12.0
175MHz
Pin Pout
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.68 -0.1 0.00 22.4 0.2 22.4 0.13 10.9 11.0 -8.3
2.68 0.9 0.00 23.3 0.2 22.4 0.13 13.6 13.7 -8.2
2.68 1.9 0.00 24.3 0.3 22.4 0.14 15.5 15.6 -8.2
2.68 2.9 0.00 25.3 0.3 22.3 0.15 17.8 17.9 -8.1
2.68 3.9 0.00 26.3 0.4 22.3 0.16 20.7 20.8 -8.1
2.68 4.9 0.00 27.2 0.5 22.3 0.18 24.0 24.2 -8.0
2.68 5.9 0.00 28.2 0.7 22.3 0.20 26.5 26.6 -8.0
2.68 6.9 0.00 29.2 0.8 22.3 0.23 29.4 29.6 -8.0
2.68 7.9 0.01 30.1 1.0 22.2 0.24 34.3 34.6 -8.0
2.68 8.9 0.01 31.0 1.2 22.0 0.26 37.7 37.9 -8.0
2.68 10.0 0.01 31.8 1.5 21.8 0.29 41.3 41.6 -8.0
2.68 11.0 0.01 32.4 1.7 21.4 0.31 44.3 44.6 -8.1
2.68 12.0 0.02 33.0 2.0 21.0 0.33 48.4 48.8 -8.3
2.68 12.9 0.02 33.4 2.2 20.5 0.34 51.3 51.8 -8.6
2.68 13.9 0.02 33.8 2.4 19.8 0.35 53.6 54.2 -8.8
2.68 14.9 0.03 34.0 2.5 19.1 0.36 54.9 55.6 -9.1
2.68 15.8 0.04 34.3 2.7 18.4 0.38 55.9 56.8 -9.4
2.68 16.8 0.05 34.4 2.8 17.6 0.38 58.0 59.0 -9.6
2.68 17.8 0.06 34.6 2.9 16.8 0.39 57.5 58.8 -9.9
2.68 18.7 0.07 34.7 2.9 15.9 0.39 58.7 60.3 -10.1
2.68 19.7 0.09 34.8 3.0 15.0 0.40 57.8 59.7 -10.3
2.68 20.7 0.12 34.8 3.0 14.1 0.40 58.3 60.7 -10.5
2.68 21.7 0.15 34.9 3.1 13.2 0.40 58.5 61.5 -10.7
2.68 22.7 0.19 34.9 3.1 12.2 0.40 58.4 62.1 -10.8
2.68 23.7 0.23 35.0 3.1 11.3 0.41 56.2 60.7 -10.9
2.68 24.6 0.29 35.0 3.2 10.4 0.41 55.6 61.3 -11.0
Application Note for Silicon RF Power Semiconductors
21/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
135MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.4
23.0
0.2
34.2
2.6
0.41
70.9
65.5
11.2
-8.7
2.15
0.7
23.0
0.2
34.3
2.7
0.42
71.4
66.1
11.3
-8.8
2.21
1.3
23.0
0.2
34.4
2.8
0.42
72.3
67.2
11.5
-8.8
2.25
2.2
23.0
0.2
34.5
2.8
0.43
72.9
67.8
11.6
-8.8
2.30
3.4
23.0
0.2
34.6
2.9
0.43
73.4
68.4
11.6
-8.8
2.36
6.6
23.0
0.2
34.7
3.0
0.44
74.2
69.2
11.7
-8.8
2.40
10.6
23.0
0.2
34.8
3.0
0.44
74.9
70.0
11.8
-8.9
2.45
16.7
23.0
0.2
34.9
3.1
0.45
75.4
70.5
11.9
-8.9
2.51
29.0
23.0
0.2
35.0
3.2
0.46
76.1
71.3
12.0
-8.9
2.55
41.2
23.0
0.2
35.1
3.2
0.46
76.6
71.9
12.1
-8.9
2.60
57.5
23.0
0.2
35.1
3.3
0.47
76.9
72.2
12.1
-8.9
2.66
85.1
23.0
0.2
35.2
3.3
0.47
77.8
73.1
12.2
-9.0
2.70
111.4
23.0
0.2
35.3
3.4
0.48
78.3
73.6
12.3
-9.0
2.75
141.7
23.0
0.2
35.4
3.4
0.48
78.6
74.1
12.4
-9.0
2.81
188.6
23.0
0.2
35.4
3.5
0.49
79.2
74.6
12.4
-9.0
2.85
228.0
23.0
0.2
35.5
3.5
0.49
79.4
75.0
12.5
-9.0
2.90
271.5
23.0
0.2
35.6
3.6
0.49
79.8
75.4
12.6
-9.1
Pin
Pout
5-7. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY (Vds=9.1V)
- AN-VHF-051-B-
Pin=0.2W
Ta=+25deg.C,Vds=9.1V
4.0
135MHz
3.5
3.0
175MHz
2.5
Pout , OUTPUT POWER(W)
2.0
0 100 200 300
IDQ, DRAIN QUIESCENT CURRENT(mA)
155MHz
Ta=+25deg. C., Vds=9.1V, Pin=0.2W
Pin=0.2W
Ta=+25deg.C,Vds=9.1V
90
155MHz
80
70
ηD, DRAIN EFFICIENCY (%)
60
0 100 200 300
175MHz
135MHz
IDQ, DRAIN QUIESCENT CURRENT(mA)
(V) (mA)
Application Note for Silicon RF Power Semiconductors
22/23
RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board
155MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.3
23.0
0.2
34.5
2.8
0.38
80.6
74.8
11.5
-10.4
2.15
0.6
23.0
0.2
34.5
2.8
0.39
80.8
75.1
11.5
-10.4
2.21
1.2
23.0
0.2
34.6
2.9
0.39
81.4
75.8
11.6
-10.4
2.25
2.1
23.0
0.2
34.7
2.9
0.39
81.7
76.1
11.6
-10.5
2.30
3.5
23.0
0.2
34.7
2.9
0.39
81.9
76.3
11.7
-10.5
2.36
6.6
23.0
0.2
34.7
3.0
0.40
82.1
76.6
11.7
-10.5
2.40
10.5
23.0
0.2
34.8
3.0
0.40
82.4
76.9
11.7
-10.5
2.45
16.6
23.0
0.2
34.8
3.0
0.40
82.8
77.4
11.8
-10.5
2.51
28.9
23.0
0.2
34.9
3.1
0.41
82.9
77.5
11.8
-10.5
2.55
40.8
23.0
0.2
34.9
3.1
0.41
83.2
77.8
11.9
-10.5
2.60
57.2
23.0
0.2
34.9
3.1
0.41
83.3
77.9
11.9
-10.5
2.66
84.7
23.0
0.2
35.0
3.1
0.41
83.5
78.2
12.0
-10.6
2.70
111.0
23.0
0.2
35.0
3.2
0.42
83.6
78.4
12.0
-10.6
2.75
141.2
23.0
0.2
35.0
3.2
0.42
83.8
78.5
12.0
-10.6
2.81
187.9
23.0
0.2
35.1
3.2
0.42
83.8
78.6
12.0
-10.6
2.85
227.6
23.0
0.2
35.1
3.2
0.42
84.1
78.9
12.1
-10.6
2.90
270.8
23.0
0.2
35.1
3.3
0.42
84.1
78.9
12.1
-10.6
175MHz
Vgg
Idq
Idd
ηD
ηadd
Gain
I.R.L.
(dBm)
(W)
(dBm)
(W)
(A)
(%)
(%)
(dB)
(dB)
2.10
0.3
23.0
0.2
34.6
2.9
0.39
81.7
76.0
11.6
-10.1
2.15
0.5
23.0
0.2
34.6
2.9
0.39
82.0
76.4
11.6
-10.1
2.21
1.3
23.0
0.2
34.7
2.9
0.39
82.2
76.6
11.6
-10.2
2.25
2.2
23.0
0.2
34.7
2.9
0.39
82.3
76.7
11.7
-10.2
2.30
3.4
23.0
0.2
34.7
3.0
0.39
82.5
76.9
11.7
-10.2
2.36
6.5
23.0
0.2
34.8
3.0
0.40
82.8
77.2
11.7
-10.2
2.40
10.6
23.0
0.2
34.8
3.0
0.40
82.6
77.2
11.8
-10.2
2.45
16.6
23.0
0.2
34.8
3.0
0.40
82.7
77.2
11.8
-10.2
2.51
28.9
23.0
0.2
34.8
3.0
0.40
83.0
77.6
11.8
-10.3
2.55
40.7
23.0
0.2
34.9
3.1
0.40
83.1
77.7
11.9
-10.3
2.60
57.2
23.0
0.2
34.9
3.1
0.41
83.1
77.7
11.9
-10.3
2.66
84.5
23.0
0.2
34.9
3.1
0.41
83.2
77.8
11.9
-10.3
2.70
110.9
23.0
0.2
34.9
3.1
0.41
83.3
77.9
11.9
-10.3
2.75
141.1
23.0
0.2
34.9
3.1
0.41
83.2
77.8
11.9
-10.4
2.81
188.2
23.0
0.2
35.0
3.1
0.41
83.4
78.1
11.9
-10.4
2.85
227.4
23.0
0.2
35.0
3.1
0.41
83.3
78.0
11.9
-10.4
2.90
270.9
23.0
0.2
35.0
3.1
0.41
83.5
78.2
12.0
-10.4
Pin
Pout
Pin
Pout
- AN-VHF-051-B-
(V) (mA)
(V) (mA)
Application Note for Silicon RF Power Semiconductors
23/23
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