MITSUBISHI AN-VHF-051-B User Manual

APPLICATION NOTE

SUBJECT: RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

Features:

- The evaluation board for RD04HMS2

- Frequency: 135-175MHz

- Typical input power: 0.2W

- Typical output power: 5.5W

- Quiescent Current: 100mA

Silicon RF Power Semiconductors

Document NO. AN-VHF-051-B Date : 30thSep. 2010

Rev. date : 7thFeb. 2011 Prepared : H.Sakairi

K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by

MIYOSHI Electronics)

- Operating Current: 0.65A

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

RF IN RFOUT

PCB L=80mm W=55mm

Application Note for Silicon RF Power Semiconductors

1/23

Contents

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

- AN-VHF-051-B-

Page

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Component List and Standard Deliverable -----------------------------------------

4. Thermal Design of Heat Sink ------------------------------------------------

5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency vs. (Vds=12.5V) --------------------------------------------- 5-2. RF Power vs. (Vds=12.5V) ------------------------------------------- 5-3. Drain Quiescent Current vs. (Vds=12.5V) ------------------------ 5-4. DC Power Supply vs. (Idq=0.1A) ---------------------------------- 5-5. Frequency vs. (Vds=9.1V) --------------------------------------5-6. RF Power vs. (Vds=9.1V) --------------------------------------5-7. Drain Quiescent Current vs. (Vds=9.1V) -------------------

3 4 5 6 7 7

8 12 14 17 18 22

Application Note for Silicon RF Power Semiconductors

2/23

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

1. Equivalent Circuitry

- AN-VHF-051-B-

RF-out

7.5mm

C14C12

C13

Vdd

Vgg

21mm

C11

C10

RD04HMS2

5.5mm

3mm 2mm

4.5mm

3mm

f=135MHz

5.5mm

4mm

1.5mm

4mm

W:Line width=1.0mm

Note:Board material- Glass-Epoxy Substrate

0.5mm8mm

Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm

0.5mm

RF-in

Application Note for Silicon RF Power Semiconductors

3/23

2. PCB Layout

TOP VIEW

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

- AN-VHF-051-B-

BOARD OUTLINE: 80.0*55.0(mm) MATERIAL : FR-4<R1705> THICKNESS : 0.8(mm)

TOP VIEW ( Parts mounting )

4007C

100p 100p

CUT CUT

27p 30p

30p

1000p

4.7Kohm

2312A

47ohm

CUT

36p

4005C

CUT

1000p 1000p

39p

4007C

22u

4006C

CUT

24p

Application Note for Silicon RF Power Semiconductors

4/23

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

Evaluation Board assembled with all the component

PCB (raw board)

- AN-VHF-051-B-

3. Component List and Standard Deliverable

- Component List

No. Description P/N Qty Manufacturer Tr MOSFET RD04HMS2 1 Mitsubishi Electric Corporation C 1 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO. C 2 27 pF 2012 50V GRM2162C1H270JZ01D 1 MURATA MANUFACTURING CO. C 3 30 pF 2012 50V GRM2162C1H300JZ01D 1 MURATA MANUFACTURING CO. C 4 30 pF 2012 50V GRM2162C1H300JZ01D 1 MURATA MANUFACTURING CO. C 5 36 pF 2012 50V GRM2162C1H360JZ01D 1 MURATA MANUFACTURING CO. C 6 39 pF 2012 50V GRM2162C1H390JZ01D 1 MURATA MANUFACTURING CO. C 7 39 pF 2012 50V GRM2162C1H390JZ01D 1 MURATA MANUFACTURING CO. C 8 24 pF 2012 50V GRM2162C1H240JZ01D 1 MURATA MANUFACTURING CO. C 9 100 pF 2012 50V GRM2162C1H101JA01D 1 MURATA MANUFACTURING CO. C 10 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO. C 11 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO. C 12 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO. C 13 1000 pF 1608 50V GRM188R11H102KA01E 1 MURATA MANUFACTURING CO. C 14 22 uF 50V H1002 1 NICHICON CORPORATION L 1 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YCCORPORATION Co.,Ltd. L 2 56 nH * Diameter: Wire=0.23mm Inside=1.1mm T/N of coils=12 1 YCCORPORATION Co.,Ltd. L 3 22 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=5 1 YC CORPORATION Co.,Ltd. L 4 29 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=6 1 YC CORPORATION Co.,Ltd. L 5 37 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=7 1 YC CORPORATION Co.,Ltd. R 1 4.7k ohm 2012 RPC10T472J 1 TAIYOSHAELECTRIC CO. R 2 47 ohm 1608 RPC05N470J 1 TAIYOSHA ELECTRIC CO. Pb PCB MS3A0166 1 Homebuilt Rc SMA female connector HRM-300-118S 2 HIROSEELECTRIC CO.,LTD Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt

Conducting wire 4 Homebuilt Screw M2 16 * Inductor of Rolling Coil measurement condition : f=100MHz

- Standard Deliverable

TYPE1 TYPE2

Application Note for Silicon RF Power Semiconductors

5/23

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

4. Thermal Design of Heat Sink

- AN-VHF-051-B-

Tch

=(Pout/Efficiency-Pout+Pin) x R

(delta)

Also, operating Tj (“Tj Therefore T T

Pb bottom-air

=“Tj

(op)

Junction point of MOSFET chip

th(ch-Pb bottom)=Rth(ch-case)+Rth(case-Pb bottom)

=5.0 (deg. C./W)

th(ch-Pb bottom)

”)=120 (deg. C.), in case of RD series that Tch

(op)

=(4W/50%-4W+0.2) x 5.0 = 21 (deg. C.)

= 150 (deg. C.)

(max)

as delta temperature between Pb bottom and the ambient 60 deg. C.

”- Tch

(delta)

- Ta

(60deg.C.)

=120-21-60=39 (deg. C.)

(in this package)

In terms of long-term reliability, “Tj

” has to be kept less than 120 deg. C. i.e. T

(op)

Pb bottom-air

has to be less than 39 deg. C.. The thermal resistance of the heat sink to border it: Rth

(Pb bottom-air)=TPb bottom-air

/(Pout/Efficiency-Pout+Pin)=39/(4W/50%-4W+0.2)= 9.3 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 9.3 deg. C./W.

Application Note for Silicon RF Power Semiconductors

6/23

RD04HMS2 single-stage amplifier with f=135-175MHz evaluation board

(MHz)

(V)

(dBm)

(W)

(dBm)

(W)

(dB)

(A)

(%)

(dB)

135

2.66

23.1

0.2

37.6

5.8

14.6

0.64

70.1

72.7

-8.2

140

2.66

23.0

0.2

37.8

6.0

14.8

0.63

74.2

76.8

-9.7

145

2.66

23.0

0.2

37.8

6.1

14.8

0.61

76.7

79.4

-10.9

150

2.66

23.1

0.2

37.8

6.1

14.7

0.60

78.0

80.7

-11.6

155

2.66

23.0

0.2

37.8

6.0

14.7

0.58

80.6

83.4

-11.8

160

2.66

23.0

0.2

37.8

6.0

14.7

0.58

80.1

82.9

-11.9

165

2.66

23.1

0.2

37.8

6.0

14.7

0.58

80.1

82.9

-12.5

170

2.66

23.0

0.2

37.8

6.0

14.8

0.58

80.5

83.3

-13.8

175

2.66

23.1

0.2

37.8

6.1

14.8

0.59

80.0

82.7

-16.3

180

2.66

23.0

0.2

37.9

6.1

14.9

0.59

80.4

83.1

-17.7

- AN-VHF-051-B-

5. Typical Performance 5-1. Frequency vs.

OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS

(Vds=12.5V)

Ta=+25deg.C Vds=12.5V, Idq=0.1A, Pin=0.2W

18 16 14 12 10

8 6

Pout(W) , Gp(dB)

4 2 0

130 135 140 145 150 155 160 165 170 175 180

ηD

Pout

f (MHz)

90 80 70 60 50 40 30 20 10 0

Drain Effi(%)

Ta=+25deg.C Vds=12.5V, Idq=0.1A, Pin=0.2W

Pout

Idd

Pout(dBm)

I.R.L.

130 135 140 145 150 155 160 165 170 175 180

f (MHz)

Ta=+25deg. C., Vds=12.5V, Idq=0.1A, Pin=0.2W

Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.

130 2.66

Pin Pout

23.0 0.2 37.4 5.4

14.3 0.64 65.6 68.1 -6.8

-5

-10

Input R. L. (dB) , Idd(A)

-15

-20

Application Note for Silicon RF Power Semiconductors

7/23

+ 16 hidden pages

MITSUBISHI AN-VHF-051-B User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual