APPLICATION NOTE
SUBJECT:
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
SUMMARY:
This application note shows the RF wide-band characteristics data (Frequency characteristics, Pout vs.
Pin characteristics, Pout vs. Vdd characteristics) at f=135 to 175MHz.
- Sample history:
RD00HVS1: Lot number “551”
Silicon RF Power Semiconductors
Document NO. AN-VHF-050
Date : 27thSep. 2010
Prepared : S.nakatsuka
Confirmed : S.Kametani
(Taking charge of Silicon RF by
MIYOSHI Electronics)
RD02MUS1B: Lot number “105AB-G”
- Evaluate conditions:
@f=135MHz to 175MHz, Vdd=7.2V/6.5V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
Typical Vgg: Vgg1=Vgg2=3.5V
- Results:
Page 2 shows the typical frequency characteristics data @ Vdd=7.2V.
Page 3 shows the typical frequency characteristics data @ Vdd=6.5V.
Page 4-6 shows the typical Pout vs. Pin characteristics data @ Vdd=7.2V.
Page 7-9 shows the typical Pout vs. Pin characteristics data @ Vdd=6.5V.
Page 10-12 shows the typical Pout vs. Vdd characteristics data.
Page 13-14 shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Frequency characteristics
@Vdd=7.2V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)
- AN-VHF-050-
4.0
Vdd=7.2V
3.5
3.0
2.5
2.0
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
130 135 140 145 150 155 160 165 170 175 180
ηt
Pout
freq[MHz]
Freq Gp R..Loss It ηt 2fo 3fo
Pin=5mW
Idq1=50mA
Idq2=200mA
Gp
It
Pout
[MHz] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
130 34.0 2.54 27.0 -11.7 0.66 53.8 -13.0 -27.5
135 34.4 2.75 27.4 -10.4 0.68 56.2 -14.9 -30.3
140 34.5 2.79 27.5 -9.7 0.71 54.4 -18.0 -34.0
145 34.6 2.86 27.6 -9.2 0.74 54.1 -20.1 -34.2
150 34.6 2.86 27.6 -8.9 0.74 53.5 -21.8 -35.5
155 34.4 2.77 27.5 -8.7 0.74 52.2 -23.5 -36.8
160 34.2 2.64 27.2 -8.6 0.73 50.7 -24.8 -38.2
165 33.9 2.47 26.9 -8.6 0.71 48.4 -26.2 -40.0
170 33.6 2.32 26.6 -8.6 0.69 46.7 -28.0 -40.8
175 33.6 2.29 26.6 -8.6 0.67 47.5 -28.0 -39.4
180 33.4 2.20 26.5 -8.5 0.64 47.6 -27.7 -39.4
80
70
60
50
40
ηt[%] , Gp[dB]
30
20
10
0
0
-5
-10
-15
-20
-25
-30
-35
R.Loss[dB] ,Harmonic[dBc]
-40
-45
-50
135 140 145 150 155 160 165 170 175
3fo
freq[MHz]
R.Loss
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
2fo
Application Note for Silicon RF Power Semiconductors
2/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Frequency characteristics
@Vdd=6.5V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)
- AN-VHF-050-
4.0
Vdd=6.5V
3.5
ηt
3.0
2.5
2.0
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
135 140 145 150 155 160 165 170 175
freq[MHz]
Freq Gp R..Loss It ηt 2fo 3fo
Pin=5mW
Idq1=50mA
Idq2=200mA
Gp
It
Pout
[MHz] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
130 33.3 2.14 26.3 -11.6 0.61 54.2 -12.4 -26.4
135 33.6 2.31 26.7 -10.4 0.63 56.7 -14.4 -29.3
140 33.8 2.37 26.7 -9.6 0.66 55.1 -17.5 -32.6
145 33.9 2.47 26.9 -9.1 0.69 55.5 -19.4 -33.2
150 33.9 2.48 26.9 -8.9 0.70 54.9 -21.3 -34.7
155 33.8 2.41 26.8 -8.7 0.70 53.5 -23.1 -36.0
160 33.6 2.30 26.6 -8.6 0.69 51.7 -24.6 -37.5
165 33.3 2.15 26.3 -8.6 0.67 49.5 -26.2 -39.5
170 33.1 2.04 26.1 -8.6 0.66 47.8 -27.9 -40.2
175 33.1 2.04 26.1 -8.6 0.64 49.3 -27.6 -38.7
180 32.9 1.94 25.9 -8.5 0.62 48.7 -27.3 -38.5
Pout
80
70
60
50
40
ηt[%] , Gp[dB]
30
20
10
0
0
-5
-10
-15
-20
-25
-30
-35
R.Loss[dB] ,Harmonic[dBc]
-40
-45
-50
135 140 145 150 155 160 165 170 175
3fo
freq[MHz]
R.Loss
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
2fo
Application Note for Silicon RF Power Semiconductors
3/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=135MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
Gp
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 -10 -5 0 5 10 15
Pout
ηt
f=135MHz
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
Pin[dBm]
PoutPin
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 19.1 0.08 34.1 -4.1 0.27 4.2 -28.9 -
-14.0 0.04 20.0 0.10 34.0 -4.3 0.27 5.2 -27.9 -
-13.0 0.05 21.0 0.13 34.0 -5.3 0.28 6.4 -27.0 -
-12.0 0.06 21.9 0.16 34.0 -6.1 0.28 7.7 -26.1 -
-11.0 0.08 22.9 0.20 33.9 -6.9 0.29 9.4 -25.1 -
-10.0 0.10 23.8 0.24 33.8 -7.8 0.30 11.1 -24.2 -49.9
-9.0 0.13 24.7 0.30 33.7 -8.3 0.31 13.3 -23.2 -48.7
-8.0 0.16 25.6 0.36 33.6 -9.0 0.33 15.5 -22.4 -47.4
-7.0 0.20 26.5 0.45 33.5 -9.7 0.34 18.1 -21.5 -46.2
-6.0 0.25 27.4 0.54 33.4 -10.5 0.36 20.8 -20.8 -45.1
-5.0 0.32 28.2 0.66 33.2 -11.0 0.39 23.9 -20.2 -44.2
-4.0 0.40 29.0 0.80 33.0 -11.4 0.41 26.9 -19.7 -43.2
-3.0 0.50 29.8 0.96 32.9 -12.0 0.44 30.3 -19.2 -42.2
-2.0 0.63 30.6 1.16 32.6 -12.4 0.48 33.8 -18.9 -40.8
-1.0 0.79 31.3 1.35 32.3 -12.7 0.51 37.0 -18.6 -39.4
0.0 1.00 31.9 1.56 31.9 -11.0 0.54 40.3 -18.2 -37.5
1.0 1.25 32.5 1.76 31.5 -10.9 0.57 43.3 -17.7 -35.7
2.0 1.58 32.9 1.97 30.9 -10.8 0.59 46.1 -17.1 -34.0
3.0 1.99 33.3 2.15 30.3 -10.6 0.62 48.7 -16.4 -32.7
4.0 2.51 33.7 2.34 29.7 -10.7 0.63 51.3 -15.8 -31.6
5.0 3.15 34.0 2.50 29.0 -10.7 0.65 53.4 -15.3 -30.8
6.0 3.96 34.2 2.63 28.2 -10.5 0.67 55.1 -14.9 -30.2
7.0 4.99 34.4 2.75 27.4 -10.3 0.68 56.4 -14.6 -29.8
8.0 6.32 34.6 2.85 26.5 -10.2 0.69 57.2 -14.4 -29.5
9.0 7.90 34.7 2.93 25.7 -10.2 0.70 58.0 -14.3 -29.3
10.0 9.92 34.8 3.00 24.8 -10.0 0.72 58.4 -14.1 -29.2
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
ηt
Pout
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
Remarks: “-“ is out of range.
f=135MHz
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Application Note for Silicon RF Power Semiconductors
4/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=155MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
Gp
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 -10 -5 0 5 10 15
Pout
ηt
f=155MHz
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
Pin[dBm]
Pin Pout
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 17.3 0.05 32.3 -4.2 0.27 2.8 -35.3 -
-14.0 0.04 18.2 0.07 32.3 -4.0 0.27 3.5 -34.2 -
-13.0 0.05 19.2 0.08 32.2 -4.6 0.27 4.3 -33.4 -
-12.0 0.06 20.2 0.10 32.2 -5.6 0.28 5.3 -32.3 -
-11.0 0.08 21.1 0.13 32.1 -6.2 0.28 6.4 -31.3 -
-10.0 0.10 22.1 0.16 32.1 -6.7 0.29 7.8 -30.3 -
-9.0 0.13 23.0 0.20 32.0 -7.4 0.30 9.4 -29.4 -
-8.0 0.16 23.9 0.25 31.9 -8.0 0.31 11.2 -28.4 -50.4
-7.0 0.20 24.8 0.30 31.8 -8.6 0.32 13.2 -27.5 -49.0
-6.0 0.25 25.7 0.37 31.7 -9.1 0.34 15.3 -26.7 -47.3
-5.0 0.32 26.6 0.45 31.6 -9.5 0.35 17.9 -25.9 -45.8
-4.0 0.40 27.4 0.55 31.4 -9.9 0.38 20.5 -25.2 -44.6
-3.0 0.50 28.3 0.67 31.3 -10.1 0.40 23.4 -24.7 -43.6
-2.0 0.63 29.1 0.82 31.1 -8.5 0.43 26.7 -24.2 -42.4
-1.0 0.79 29.9 0.99 31.0 -8.5 0.46 29.8 -23.9 -41.4
0.0 1.00 30.7 1.18 30.7 -8.6 0.50 33.2 -23.6 -40.5
1.0 1.25 31.5 1.40 30.5 -8.8 0.53 36.6 -23.5 -39.6
2.0 1.58 32.2 1.64 30.2 -8.8 0.57 40.1 -23.4 -38.7
3.0 1.99 32.8 1.89 29.8 -8.7 0.61 43.3 -23.2 -37.9
4.0 2.50 33.3 2.14 29.3 -8.7 0.64 46.2 -23.1 -37.4
5.0 3.15 33.8 2.38 28.8 -8.9 0.68 48.7 -23.1 -36.8
6.0 3.98 34.1 2.59 28.1 -8.8 0.71 50.8 -23.1 -36.5
7.0 4.99 34.4 2.77 27.4 -8.8 0.74 52.4 -23.1 -36.3
8.0 6.29 34.7 2.94 26.7 -8.7 0.76 53.8 -23.1 -36.1
9.0 7.95 34.9 3.10 25.9 -8.7 0.79 54.8 -23.1 -35.9
10.0 9.98 35.1 3.23 25.1 -8.6 0.81 55.5 -23.1 -35.9
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
Remarks: “-“ is out of range.
Pout
ηt
f=155MHz
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Application Note for Silicon RF Power Semiconductors
5/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=175MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 - 10 -5 0 5 10 15
Gp
Pout
f=175MHz
Vdd=7.2V
Pin=5mW
ηt
Pin[dBm]
Idq1=50mA
Idq2=200mA
Pin Pout
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 16.0 0.04 31.0 -4.3 0.26 2.1 -40.3 -
-14.0 0.04 16.9 0.05 30.9 -4.5 0.26 2.6 -39.6 -
-13.0 0.05 17.9 0.06 30.9 -4.8 0.27 3.2 -38.6 -
-12.0 0.06 18.9 0.08 30.9 -5.5 0.27 4.0 -37.6 -
-11.0 0.08 19.8 0.10 30.8 -6.3 0.27 4.9 -36.6 -
-10.0 0.10 20.8 0.12 30.8 -7.0 0.28 6.0 -35.6 -
-9.0 0.13 21.7 0.15 30.7 -7.6 0.28 7.3 -34.6 -
-8.0 0.16 22.6 0.18 30.6 -8.2 0.29 8.8 -33.6 -
-7.0 0.20 23.6 0.23 30.6 -8.8 0.30 10.6 -32.6 -
-6.0 0.25 24.4 0.28 30.4 -9.2 0.31 12.5 -31.6 -51.1
-5.0 0.32 25.3 0.34 30.3 -9.5 0.32 14.6 -30.6 -49.8
-4.0 0.40 26.2 0.42 30.2 -9.7 0.34 17.0 -29.8 -48.2
-3.0 0.50 27.0 0.51 30.1 -10.0 0.36 19.6 -29.0 -46.8
-2.0 0.63 27.9 0.61 29.9 -8.5 0.38 22.5 -28.3 -45.5
-1.0 0.79 28.7 0.74 29.7 -8.2 0.41 25.4 -27.8 -44.6
0.0 1.00 29.5 0.90 29.5 -8.5 0.44 28.6 -27.4 -43.6
1.0 1.25 30.3 1.06 29.3 -8.6 0.47 31.8 -27.2 -42.9
2.0 1.58 31.0 1.26 29.0 -8.5 0.50 35.0 -27.0 -42.1
3.0 1.99 31.7 1.47 28.7 -8.6 0.54 38.2 -27.0 -41.4
4.0 2.51 32.3 1.68 28.3 -8.6 0.57 41.0 -27.1 -40.7
5.0 3.16 32.8 1.89 27.8 -8.6 0.61 43.5 -27.2 -40.0
6.0 3.97 33.2 2.09 27.2 -8.6 0.64 45.7 -27.4 -39.4
7.0 5.00 33.6 2.28 26.6 -8.6 0.67 47.5 -27.5 -38.9
8.0 6.31 33.9 2.47 25.9 -8.6 0.70 49.3 -27.7 -38.5
9.0 7.97 34.2 2.65 25.2 -8.5 0.73 50.6 -27.9 -38.2
10.0 9.99 34.5 2.81 24.5 -8.5 0.76 51.7 -28.0 -37.9
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
ηt
Pout
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
Remarks: “-“ is out of range.
f=175MHz
Vdd=7.2V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Application Note for Silicon RF Power Semiconductors
6/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=135MHz, Vdd=6.5V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
Gp
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 -10 -5 0 5 10 15
Pout
ηt
f=135MHz
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
Pin[dBm]
PoutPin
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 19.0 0.08 33.9 -4.7 0.27 4.6 -29.1 -
-14.0 0.04 19.9 0.10 33.9 -4.9 0.27 5.6 -28.2 -
-13.0 0.05 20.9 0.12 33.9 -5.7 0.28 6.9 -27.3 -
-12.0 0.06 21.8 0.15 33.8 -6.4 0.28 8.4 -26.2 -
-11.0 0.08 22.8 0.19 33.7 -7.3 0.29 10.1 -25.3 -
-10.0 0.10 23.7 0.23 33.7 -8.0 0.30 12.0 -24.3 -49.8
-9.0 0.13 24.6 0.29 33.6 -8.7 0.31 14.3 -23.4 -48.2
-8.0 0.16 25.5 0.35 33.4 -9.3 0.32 16.7 -22.6 -46.8
-7.0 0.20 26.3 0.43 33.3 -10.0 0.34 19.6 -21.8 -45.6
-6.0 0.25 27.2 0.52 33.2 -10.6 0.36 22.4 -21.1 -44.1
-5.0 0.32 28.0 0.63 33.0 -11.1 0.38 25.7 -20.4 -43.1
-4.0 0.40 28.8 0.76 32.8 -11.6 0.41 28.9 -19.9 -41.9
-3.0 0.50 29.6 0.90 32.6 -12.1 0.43 32.1 -19.5 -40.8
-2.0 0.63 30.3 1.07 32.3 -12.5 0.46 35.5 -19.1 -39.3
-1.0 0.79 30.9 1.23 31.9 -10.2 0.49 38.7 -18.6 -37.5
0.0 1.00 31.5 1.40 31.5 -10.7 0.52 41.8 -18.0 -35.8
1.0 1.25 31.9 1.56 30.9 -10.8 0.54 44.6 -17.4 -34.2
2.0 1.59 32.4 1.72 30.3 -10.8 0.56 47.4 -16.6 -32.8
3.0 1.98 32.7 1.86 29.7 -10.8 0.58 50.0 -16.0 -31.7
4.0 2.52 33.0 2.01 29.0 -10.7 0.59 52.4 -15.4 -30.7
5.0 3.16 33.3 2.12 28.3 -10.5 0.60 54.2 -15.0 -30.2
6.0 3.96 33.5 2.22 27.5 -10.4 0.62 55.5 -14.7 -29.8
7.0 5.02 33.6 2.30 26.6 -10.4 0.63 56.7 -14.5 -29.5
8.0 6.27 33.7 2.37 25.8 -10.2 0.64 57.4 -14.3 -29.3
9.0 7.95 33.9 2.43 24.8 -10.1 0.65 57.7 -14.1 -29.1
10.0 9.94 33.9 2.48 24.0 -10.0 0.66 58.1 -14.1 -29.0
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
ηt
Pout
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
Remarks: “-“ is out of range.
f=135MHz
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Application Note for Silicon RF Power Semiconductors
7/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=155MHz, Vdd=6.5V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
Gp
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 -1 0 -5 0 5 10 15
Pout
ηt
f=155MHz
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
Pin[dBm]
Pin Pout
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 17.2 0.05 32.2 -4.0 0.26 3.1 -35.3 -
-14.0 0.04 18.1 0.06 32.1 -4.3 0.27 3.8 -34.5 -
-13.0 0.05 19.1 0.08 32.1 -4.7 0.27 4.7 -33.3 -
-12.0 0.06 20.1 0.10 32.1 -5.4 0.27 5.7 -32.5 -
-11.0 0.08 21.0 0.13 32.0 -6.2 0.28 7.0 -31.4 -
-10.0 0.10 22.0 0.16 32.0 -6.8 0.29 8.5 -30.4 -
-9.0 0.13 22.9 0.19 31.9 -7.4 0.29 10.2 -29.5 -
-8.0 0.16 23.8 0.24 31.8 -8.1 0.30 12.1 -28.5 -50.2
-7.0 0.20 24.7 0.29 31.7 -8.6 0.32 14.3 -27.7 -48.6
-6.0 0.25 25.6 0.36 31.6 -9.0 0.33 16.8 -26.7 -46.9
-5.0 0.31 26.4 0.44 31.4 -9.5 0.35 19.4 -26.0 -45.4
-4.0 0.39 27.3 0.53 31.3 -9.8 0.37 22.1 -25.3 -44.3
-3.0 0.50 28.1 0.65 31.1 -8.6 0.39 25.3 -24.8 -42.9
-2.0 0.63 28.9 0.78 31.0 -8.5 0.42 28.7 -24.3 -41.9
-1.0 0.79 29.7 0.94 30.7 -8.8 0.45 32.1 -24.0 -40.9
0.0 0.99 30.5 1.12 30.5 -8.7 0.48 35.6 -23.7 -39.9
1.0 1.25 31.2 1.31 30.2 -8.8 0.52 38.9 -23.5 -39.1
2.0 1.57 31.8 1.52 29.8 -8.8 0.55 42.5 -23.4 -38.3
3.0 1.99 32.4 1.73 29.4 -8.8 0.59 45.5 -23.2 -37.6
4.0 2.51 32.8 1.92 28.8 -8.9 0.62 48.2 -23.1 -37.1
5.0 3.14 33.2 2.09 28.2 -8.7 0.64 50.2 -23.1 -36.7
6.0 3.97 33.5 2.25 27.5 -8.8 0.67 52.1 -23.1 -36.5
7.0 5.00 33.8 2.39 26.8 -8.7 0.69 53.3 -23.1 -36.3
8.0 6.30 34.0 2.51 26.0 -8.7 0.71 54.4 -23.1 -36.0
9.0 7.96 34.2 2.62 25.2 -8.7 0.73 55.2 -23.1 -36.0
10.0 9.99 34.3 2.71 24.3 -8.6 0.75 55.8 -23.2 -35.9
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
ηt
Pout
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
Remarks: “-“ is out of range.
f=155MHz
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Application Note for Silicon RF Power Semiconductors
8/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Pin characteristics
@ f=175MHz, Vdd=6.5V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
40
35
30
25
20
15
Pout[dBm] ,Gp[dB]
10
5
0
-20 -15 -10 -5 0 5 10 15
Gp
Pout
f=175MHz
ηt
Pin[dBm]
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
Pin Pout
[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
-15.0 0.03 15.9 0.04 30.8 -3.9 0.26 2.3 -40.5 -
-14.0 0.04 16.8 0.05 30.8 -4.1 0.26 2.8 -39.5 -
-13.0 0.05 17.8 0.06 30.8 -4.6 0.26 3.5 -38.6 -
-12.0 0.06 18.8 0.08 30.8 -5.3 0.27 4.3 -37.9 -
-11.0 0.08 19.7 0.09 30.7 -5.9 0.27 5.4 -36.7 -
-10.0 0.10 20.7 0.12 30.7 -6.8 0.28 6.5 -35.7 -
-9.0 0.13 21.6 0.15 30.6 -7.4 0.28 8.0 -34.7 -
-8.0 0.16 22.5 0.18 30.5 -8.0 0.29 9.6 -33.6 -
-7.0 0.20 23.4 0.22 30.4 -8.7 0.30 11.4 -32.6 -
-6.0 0.25 24.3 0.27 30.3 -9.2 0.31 13.6 -31.6 -51.4
-5.0 0.32 25.2 0.33 30.2 -9.5 0.32 15.9 -30.7 -49.3
-4.0 0.40 26.1 0.40 30.1 -9.8 0.34 18.6 -29.8 -48.0
-3.0 0.50 26.9 0.49 29.9 -10.0 0.36 21.2 -29.0 -46.5
-2.0 0.63 27.7 0.59 29.7 -8.1 0.38 24.4 -28.3 -45.2
-1.0 0.79 28.6 0.72 29.6 -8.5 0.40 27.6 -27.8 -44.2
0.0 1.00 29.3 0.85 29.3 -8.5 0.43 30.8 -27.5 -43.3
1.0 1.26 30.1 1.01 29.1 -8.6 0.46 34.1 -27.2 -42.4
2.0 1.58 30.7 1.18 28.8 -8.6 0.49 37.4 -27.1 -41.6
3.0 2.00 31.4 1.36 28.4 -8.7 0.52 40.4 -27.1 -40.9
4.0 2.51 31.9 1.54 27.9 -8.7 0.55 43.1 -27.1 -40.2
5.0 3.17 32.3 1.70 27.3 -8.7 0.58 45.4 -27.3 -39.6
6.0 3.97 32.7 1.86 26.7 -8.6 0.61 47.4 -27.4 -39.1
7.0 5.00 33.0 2.01 26.0 -8.6 0.63 48.9 -27.5 -38.6
8.0 6.31 33.3 2.15 25.3 -8.6 0.66 50.3 -27.7 -38.3
9.0 7.93 33.6 2.27 24.6 -8.5 0.68 51.5 -27.8 -38.0
10.0 10.00 33.8 2.39 23.8 -8.5 0.71 52.3 -27.9 -37.7
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
ηt[%]
Pout[W] ,It[A]
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12
ηt
Pout
It
Pin[dBm]
Gp R..Loss It ηt 2fo 3fo
f=175MHz
Vdd=6.5V
Pin=5mW
Idq1=50mA
Idq2=200mA
80
70
60
50
40
ηt[%]
30
20
10
0
Remarks: “-“ is out of range.
Application Note for Silicon RF Power Semiconductors
9/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Vdd characteristics
@ f=135MHz, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
7
ηt
6
5
4
Pout
3
Pout[W] ,It[A]
f=135MHz
Pin=5mW
Idq1=50mA
2
Idq2=200mA
It
1
0
0 2 4 6 8 10 12
Vdd[V]
70
60
50
40
ηt[%]
30
20
10
0
Vdｄ Gp R..Loss It ηt 2fo 3fo
Pout
[V] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
2.0 23.4 0.2 16.43 -12.1 0.23 48.1 -14.1 -27.3
2.5 25.5 0.4 18.49 -11.5 0.28 50.7 -14.0 -27.8
3.0 27.1 0.5 20.12 -10.9 0.33 52.6 -13.9 -28.0
3.5 28.5 0.7 21.47 -10.6 0.38 54.0 -13.9 -28.3
4.0 29.7 0.9 22.66 -10.4 0.42 55.2 -14.0 -28.4
4.5 30.7 1.2 23.67 -10.3 0.46 56.0 -14.0 -28.6
5.0 31.5 1.4 24.53 -10.3 0.51 56.6 -14.1 -28.8
5.5 32.3 1.7 25.35 -10.3 0.55 56.9 -14.2 -29.0
6.0 33.0 2.0 26.04 -10.3 0.59 57.1 -14.2 -29.2
6.5 33.7 2.3 26.65 -10.3 0.63 57.0 -14.4 -29.4
7.0 34.2 2.7 27.24 -10.3 0.67 57.0 -14.5 -29.6
7.5 34.7 3.0 27.73 -10.4 0.70 56.6 -14.6 -29.8
8.0 35.2 3.3 28.20 -10.4 0.74 56.0 -14.8 -30.1
8.5 35.6 3.6 28.61 -10.4 0.77 55.3 -15.0 -30.4
9.0 36.0 3.9 28.97 -10.4 0.81 54.5 -15.2 -30.7
9.5 36.3 4.2 29.29 -10.3 0.84 53.6 -15.4 -31.1
10.0 36.6 4.6 29.57 -10.4 0.87 52.7 -15.7 -31.5
Application Note for Silicon RF Power Semiconductors
10/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Vdd characteristics
@ f=155MHz, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
7
6
5
4
3
f=155MHz
Pout[W] ,It[A]
Pin=5mW
Idq1=50mA
2
Idq2=200mA
1
0
0 2 4 6 8 10 12
Vdｄ Gp R..Loss It ηt 2fo 3fo
Pout
ηt
Pout
It
Vdd[V]
70
60
50
40
30
20
10
0
[V] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
2.0 24.0 0.3 17.03 -9.4 0.28 44.5 -25.6 -35.8
2.5 26.1 0.4 19.07 -9.0 0.34 47.8 -24.9 -35.8
3.0 27.6 0.6 20.66 -8.9 0.39 49.7 -24.4 -35.8
3.5 29.0 0.8 21.98 -8.8 0.44 51.5 -24.0 -35.9
4.0 30.1 1.0 23.10 -8.7 0.49 52.5 -23.7 -35.9
4.5 31.1 1.3 24.07 -8.7 0.53 53.4 -23.5 -36.0
5.0 31.9 1.5 24.92 -8.7 0.58 54.0 -23.3 -36.1
5.5 32.7 1.8 25.65 -8.7 0.62 54.2 -23.2 -36.2
6.0 33.3 2.1 26.28 -8.7 0.66 54.0 -23.1 -36.2
6.5 33.8 2.4 26.84 -8.7 0.70 53.7 -23.1 -36.2
7.0 34.3 2.7 27.34 -8.7 0.73 53.2 -23.1 -36.2
7.5 34.7 3.0 27.74 -8.7 0.76 52.4 -23.1 -36.2
8.0 35.1 3.2 28.11 -8.7 0.79 51.3 -23.1 -36.2
8.5 35.4 3.5 28.41 -8.7 0.81 50.1 -23.2 -36.2
9.0 35.7 3.7 28.65 -8.7 0.84 49.0 -23.3 -36.1
9.5 35.9 3.9 28.88 -8.7 0.86 47.6 -23.4 -36.1
10.0 36.0 4.0 29.07 -8.7 0.87 46.1 -23.5 -36.1
ηt[%]
Application Note for Silicon RF Power Semiconductors
11/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Pout vs. Vdd characteristics
@ f=175MHz, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)
- AN-VHF-050-
7
6
5
4
3
Pout[W] ,It[A]
f=175MHz
Pin=5mW
Idq1=50mA
2
Idq2=200mA
1
0
0 2 4 6 8 10 12
Vdｄ Gp R..Loss It ηt 2fo 3fo
Pout
ηt
Pout
It
Vdd[V]
70
60
50
40
30
20
10
0
[V] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]
2.0 23.5 0.2 16.49 -9.0 0.28 40.1 -31.4 -37.6
2.5 25.5 0.4 18.52 -8.8 0.33 43.7 -29.7 -37.6
3.0 27.1 0.5 20.11 -8.7 0.37 46.2 -28.8 -37.6
3.5 28.4 0.7 21.43 -8.7 0.41 48.2 -28.2 -37.7
4.0 29.6 0.9 22.56 -8.6 0.46 49.3 -27.9 -37.8
4.5 30.5 1.1 23.50 -8.6 0.50 50.2 -27.8 -37.9
5.0 31.3 1.4 24.32 -8.6 0.54 50.5 -27.7 -38.1
5.5 32.0 1.6 25.04 -8.6 0.58 50.4 -27.7 -38.2
6.0 32.6 1.8 25.62 -8.6 0.61 50.0 -27.6 -38.5
6.5 33.1 2.0 26.11 -8.6 0.64 49.4 -27.6 -38.6
7.0 33.5 2.3 26.53 -8.5 0.67 48.5 -27.6 -38.9
7.5 33.9 2.4 26.89 -8.5 0.69 47.3 -27.6 -39.1
8.0 34.2 2.6 27.18 -8.5 0.71 46.1 -27.6 -39.2
8.5 34.4 2.8 27.42 -8.5 0.73 44.8 -27.6 -39.5
9.0 34.6 2.9 27.64 -8.5 0.74 43.5 -27.6 -39.6
9.5 34.8 3.0 27.81 -8.5 0.76 42.1 -27.6 -39.8
10.0 35.0 3.1 27.96 -8.5 0.77 40.8 -27.6 -40.0
ηt[%]
Application Note for Silicon RF Power Semiconductors
12/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
5mm
3mm
3mm
8mm
5.5 mm
1mm
3m
5mm
1mm
1mm
C1
4mmC2C3
R1R3R4
C13
C15
C16C5L2
C19L42.5 mmL5C6
C7C8C9
4mm
C11
19m m
W
W
19m m
W
W
Vdd
Vg2
Equivalent Circuit
- AN-VHF-050-
C10
12.5 mm
GND
4mm
C18
C17
19mm
10mm
RF-out
Vdd
R2
R9
R8
1.5m m
Vgg2
R7
L3
6.5m m
RD02MUS1B
C14
Vdd
R6
19mm
RD00HVS1
Vgg1
C4
Vg1
R5
C12
<N o te >
Bo a rd me te rial: Gla ss- Ep ox y su bs tr at e(ε r= 4 . 8, h = 0 .8 m m)
Micr o st ri p lin e wi dt h=1 . 3 mm
W l in e w idt h =1 . 0 mm
2mm
L1
GND
RF-in
Application Note for Silicon RF Power Semiconductors
13/14
RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V
Equivalent Circuit (parts list)
- AN-VHF-050-
Parts Type Symbol Value Type name Vender
Capasitor
Resistance
Inductanc e
C1 100pF GRM1882C1H101JA01D Murata Manufacturing Co.,Ltd.
C2 5pF GRM1882C1H5R0CZ01D Murata Manufacturing Co.,Ltd.
C3 9pF GRM1882C1H470JA01D Murata Manufacturing Co.,Ltd.
C4 47pF GRM1882C1H120JA01D Murata Manufacturing Co.,Ltd.
C5 160pF GRM1882C1H180JA01D Murata Manufacturing Co.,Ltd.
C6 33pF GRM1882C1H101JA01D Murata Manufacturing Co.,Ltd.
C7 22pF GRM1882C1H390JA01D Murata Manufacturing Co.,Ltd.
C8 47pF GRM1882C1H300JA01D Murata Manufacturing Co.,Ltd.
C9 30pF GRM1882C1H150JA01D Murata Manufacturing Co.,Ltd.
C10 30pF GRM1882C1H5R0CZ01D Murata Manufacturing Co.,Ltd.
C11 100pF GRM1882C1H9R0DZ01D Murata Manufacturing Co.,Ltd.
C12 1nF GRM188R11H102KA01D Murata Manufacturing Co.,Ltd.
C13 1nF GRM188R11H102KA01D Murata Manufacturing Co.,Ltd.
C14 22nF GRM188R11H223 KA01D Murata Manufacturing Co.,Ltd.
C15 22uF UVZ1H220 MDD NICHICON COPORATION
C16 1nF GRM188R11H102KA01D Murata Manufacturing Co.,Ltd.
C17 1nF GRM188R11H102KA01D Murata Manufacturing Co.,Ltd.
C18 22nF GRM188R11H223 KA01D Murata Manufacturing Co.,Ltd.
C19 22uF UVZ1H220 MDD NICHICON COPORATION
R1 390Ω RPC10-391J TAIYOSHA ELECTRIC CO.,Ltd.
R2 1Ω RPC05-1R0J TAIYOSHA ELECTRIC CO.,Ltd.
R3 100Ω RPC05-101J TAIYOSHA ELECTRIC CO.,Ltd.
R4 30KΩ RPC10-303J TAIYOSHA ELECTRIC CO.,Ltd.
R5 10KΩ RPC05-103J TAIYOSHA ELECTRIC CO.,Ltd.
R6 0Ω RPC05-0R0 TAIYOSHA ELECTRIC CO.,Ltd.
R7 100Ω RPC05-101J TAIYOSHA ELECTRIC CO.,Ltd.
R8 39KΩ RPC05-393J TAIYOSHA ELECTRIC CO.,Ltd.
R9 10KΩ RPC05-103J TAIYOSHA ELECTRIC CO.,Ltd.
L1 68nH LLQ1608- A68N TOKO Co.,Ltd.
L2
Diameter:0.40mm,φ2.46mm(the out side diameter)
L3
Diameter:0.40mm,φ2.46mm(the out side diameter)
L4
Diameter:0.40mm,φ2.46mm(the out side diameter)
L5
Diameter:0.40mm,φ2.46mm(the out side diameter)
34.5nH Enameled wire 5Turns,
34.5nH Enameled wire 5Turns,
34.5nH Enameled wire 5Turns,
26.3nH Enameled wire 4Turns,
4005A yc corporation
4005A yc corporation
4005A yc corporation
4004C yc corporation
Application Note for Silicon RF Power Semiconductors
14/14
Loading...