MITSUBISHI AN-VHF-050 User Manual

APPLICATION NOTE

SUBJECT:

RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V

SUMMARY:

This application note shows the RF wide-band characteristics data (Frequency characteristics, Pout vs. Pin characteristics, Pout vs. Vdd characteristics) at f=135 to 175MHz.

- Sample history: RD00HVS1: Lot number “551”

Silicon RF Power Semiconductors

Document NO. AN-VHF-050 Date : 27thSep. 2010 Prepared : S.nakatsuka Confirmed : S.Kametani

(Taking charge of Silicon RF by

MIYOSHI Electronics)

RD02MUS1B: Lot number “105AB-G”

- Evaluate conditions: @f=135MHz to 175MHz, Vdd=7.2V/6.5V, Idq1=50mA (Vgg1 adj.), Idq2=200mA(Vgg2 adj.)

Typical Vgg: Vgg1=Vgg2=3.5V

- Results: Page 2 shows the typical frequency characteristics data @ Vdd=7.2V. Page 3 shows the typical frequency characteristics data @ Vdd=6.5V. Page 4-6 shows the typical Pout vs. Pin characteristics data @ Vdd=7.2V. Page 7-9 shows the typical Pout vs. Pin characteristics data @ Vdd=6.5V. Page 10-12 shows the typical Pout vs. Vdd characteristics data. Page 13-14 shows the equivalent circuit.

Application Note for Silicon RF Power Semiconductors

1/14

RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V

Frequency characteristics

@Vdd=7.2V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)

- AN-VHF-050-

4.0 Vdd=7.2V

3.5

3.0

2.5

2.0

Pout[W] ,It[A]

1.5

1.0

0.5

0.0

130 135 140 145 150 155 160 165 170 175 180

ηt

Pout

freq[MHz]

Freq Gp R..Loss It ηt 2fo 3fo

Pin=5mW Idq1=50mA Idq2=200mA

Pout

[MHz] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]

130 34.0 2.54 27.0 -11.7 0.66 53.8 -13.0 -27.5 135 34.4 2.75 27.4 -10.4 0.68 56.2 -14.9 -30.3 140 34.5 2.79 27.5 -9.7 0.71 54.4 -18.0 -34.0 145 34.6 2.86 27.6 -9.2 0.74 54.1 -20.1 -34.2 150 34.6 2.86 27.6 -8.9 0.74 53.5 -21.8 -35.5 155 34.4 2.77 27.5 -8.7 0.74 52.2 -23.5 -36.8 160 34.2 2.64 27.2 -8.6 0.73 50.7 -24.8 -38.2 165 33.9 2.47 26.9 -8.6 0.71 48.4 -26.2 -40.0 170 33.6 2.32 26.6 -8.6 0.69 46.7 -28.0 -40.8 175 33.6 2.29 26.6 -8.6 0.67 47.5 -28.0 -39.4 180 33.4 2.20 26.5 -8.5 0.64 47.6 -27.7 -39.4

ηt[%] , Gp[dB]

-5

-10

-15

-20

-25

-30

-35

R.Loss[dB] ,Harmonic[dBc]

-40

-45

-50 135 140 145 150 155 160 165 170 175

3fo

freq[MHz]

R.Loss

Vdd=7.2V Pin=5mW Idq1=50mA Idq2=200mA

2fo

Application Note for Silicon RF Power Semiconductors

2/14

RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V

Frequency characteristics

@Vdd=6.5V, Pin=5mW, Idq1=50mA(Vgg1 adj.), Idq=200mA(Vgg2 adj.)

- AN-VHF-050-

4.0 Vdd=6.5V

3.5

ηt

3.0

2.5

2.0

Pout[W] ,It[A]

1.5

1.0

0.5

0.0

135 140 145 150 155 160 165 170 175

freq[MHz]

Freq Gp R..Loss It ηt 2fo 3fo

Pin=5mW Idq1=50mA Idq2=200mA

Pout

[MHz] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]

130 33.3 2.14 26.3 -11.6 0.61 54.2 -12.4 -26.4 135 33.6 2.31 26.7 -10.4 0.63 56.7 -14.4 -29.3 140 33.8 2.37 26.7 -9.6 0.66 55.1 -17.5 -32.6 145 33.9 2.47 26.9 -9.1 0.69 55.5 -19.4 -33.2 150 33.9 2.48 26.9 -8.9 0.70 54.9 -21.3 -34.7 155 33.8 2.41 26.8 -8.7 0.70 53.5 -23.1 -36.0 160 33.6 2.30 26.6 -8.6 0.69 51.7 -24.6 -37.5 165 33.3 2.15 26.3 -8.6 0.67 49.5 -26.2 -39.5 170 33.1 2.04 26.1 -8.6 0.66 47.8 -27.9 -40.2 175 33.1 2.04 26.1 -8.6 0.64 49.3 -27.6 -38.7 180 32.9 1.94 25.9 -8.5 0.62 48.7 -27.3 -38.5

Pout

ηt[%] , Gp[dB]

-5

-10

-15

-20

-25

-30

-35

R.Loss[dB] ,Harmonic[dBc]

-40

-45

-50 135 140 145 150 155 160 165 170 175

3fo

freq[MHz]

R.Loss

Vdd=6.5V Pin=5mW Idq1=50mA Idq2=200mA

2fo

Application Note for Silicon RF Power Semiconductors

3/14

RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V

Pout vs. Pin characteristics

@ f=135MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)

- AN-VHF-050-

Pout[dBm] ,Gp[dB]

-20 -15 -10 -5 0 5 10 15

Pout

ηt

f=135MHz Vdd=7.2V Pin=5mW Idq1=50mA Idq2=200mA

Pin[dBm]

PoutPin

[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]

-15.0 0.03 19.1 0.08 34.1 -4.1 0.27 4.2 -28.9 -

-14.0 0.04 20.0 0.10 34.0 -4.3 0.27 5.2 -27.9 -

-13.0 0.05 21.0 0.13 34.0 -5.3 0.28 6.4 -27.0 -

-12.0 0.06 21.9 0.16 34.0 -6.1 0.28 7.7 -26.1 -

-11.0 0.08 22.9 0.20 33.9 -6.9 0.29 9.4 -25.1 -

-10.0 0.10 23.8 0.24 33.8 -7.8 0.30 11.1 -24.2 -49.9

-9.0 0.13 24.7 0.30 33.7 -8.3 0.31 13.3 -23.2 -48.7

-8.0 0.16 25.6 0.36 33.6 -9.0 0.33 15.5 -22.4 -47.4

-7.0 0.20 26.5 0.45 33.5 -9.7 0.34 18.1 -21.5 -46.2

-6.0 0.25 27.4 0.54 33.4 -10.5 0.36 20.8 -20.8 -45.1

-5.0 0.32 28.2 0.66 33.2 -11.0 0.39 23.9 -20.2 -44.2

-4.0 0.40 29.0 0.80 33.0 -11.4 0.41 26.9 -19.7 -43.2

-3.0 0.50 29.8 0.96 32.9 -12.0 0.44 30.3 -19.2 -42.2

-2.0 0.63 30.6 1.16 32.6 -12.4 0.48 33.8 -18.9 -40.8

-1.0 0.79 31.3 1.35 32.3 -12.7 0.51 37.0 -18.6 -39.4

0.0 1.00 31.9 1.56 31.9 -11.0 0.54 40.3 -18.2 -37.5

1.0 1.25 32.5 1.76 31.5 -10.9 0.57 43.3 -17.7 -35.7

2.0 1.58 32.9 1.97 30.9 -10.8 0.59 46.1 -17.1 -34.0

3.0 1.99 33.3 2.15 30.3 -10.6 0.62 48.7 -16.4 -32.7

4.0 2.51 33.7 2.34 29.7 -10.7 0.63 51.3 -15.8 -31.6

5.0 3.15 34.0 2.50 29.0 -10.7 0.65 53.4 -15.3 -30.8

6.0 3.96 34.2 2.63 28.2 -10.5 0.67 55.1 -14.9 -30.2

7.0 4.99 34.4 2.75 27.4 -10.3 0.68 56.4 -14.6 -29.8

8.0 6.32 34.6 2.85 26.5 -10.2 0.69 57.2 -14.4 -29.5

9.0 7.90 34.7 2.93 25.7 -10.2 0.70 58.0 -14.3 -29.3

10.0 9.92 34.8 3.00 24.8 -10.0 0.72 58.4 -14.1 -29.2

4.0

3.5

3.0

2.5

2.0

ηt[%]

Pout[W] ,It[A]

1.5

1.0

0.5

0.0 0 2 4 6 8 10 12

ηt

Pout

Pin[dBm]

Gp R..Loss It ηt 2fo 3fo

Remarks: “-“ is out of range.

f=135MHz Vdd=7.2V Pin=5mW Idq1=50mA Idq2=200mA

ηt[%]

Application Note for Silicon RF Power Semiconductors

4/14

RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=135-175MHz, Vdd=7.2/6.5V

Pout vs. Pin characteristics

@ f=155MHz, Vdd=7.2V, Idq1=50mA(Vgg1 adj.), Idq2=200mA(Vgg2 adj.)

- AN-VHF-050-

Pout[dBm] ,Gp[dB]

-20 -15 -10 -5 0 5 10 15

Pout

ηt

f=155MHz Vdd=7.2V Pin=5mW Idq1=50mA Idq2=200mA

Pin[dBm]

Pin Pout

[dBm] [W] [dBm] [W] [dB] .[dB] [A} [%] [dBc] [dBc]

-15.0 0.03 17.3 0.05 32.3 -4.2 0.27 2.8 -35.3 -

-14.0 0.04 18.2 0.07 32.3 -4.0 0.27 3.5 -34.2 -

-13.0 0.05 19.2 0.08 32.2 -4.6 0.27 4.3 -33.4 -

-12.0 0.06 20.2 0.10 32.2 -5.6 0.28 5.3 -32.3 -

-11.0 0.08 21.1 0.13 32.1 -6.2 0.28 6.4 -31.3 -

-10.0 0.10 22.1 0.16 32.1 -6.7 0.29 7.8 -30.3 -

-9.0 0.13 23.0 0.20 32.0 -7.4 0.30 9.4 -29.4 -

-8.0 0.16 23.9 0.25 31.9 -8.0 0.31 11.2 -28.4 -50.4

-7.0 0.20 24.8 0.30 31.8 -8.6 0.32 13.2 -27.5 -49.0

-6.0 0.25 25.7 0.37 31.7 -9.1 0.34 15.3 -26.7 -47.3

-5.0 0.32 26.6 0.45 31.6 -9.5 0.35 17.9 -25.9 -45.8

-4.0 0.40 27.4 0.55 31.4 -9.9 0.38 20.5 -25.2 -44.6

-3.0 0.50 28.3 0.67 31.3 -10.1 0.40 23.4 -24.7 -43.6

-2.0 0.63 29.1 0.82 31.1 -8.5 0.43 26.7 -24.2 -42.4

-1.0 0.79 29.9 0.99 31.0 -8.5 0.46 29.8 -23.9 -41.4

0.0 1.00 30.7 1.18 30.7 -8.6 0.50 33.2 -23.6 -40.5

1.0 1.25 31.5 1.40 30.5 -8.8 0.53 36.6 -23.5 -39.6

2.0 1.58 32.2 1.64 30.2 -8.8 0.57 40.1 -23.4 -38.7

3.0 1.99 32.8 1.89 29.8 -8.7 0.61 43.3 -23.2 -37.9

4.0 2.50 33.3 2.14 29.3 -8.7 0.64 46.2 -23.1 -37.4

5.0 3.15 33.8 2.38 28.8 -8.9 0.68 48.7 -23.1 -36.8

6.0 3.98 34.1 2.59 28.1 -8.8 0.71 50.8 -23.1 -36.5

7.0 4.99 34.4 2.77 27.4 -8.8 0.74 52.4 -23.1 -36.3

8.0 6.29 34.7 2.94 26.7 -8.7 0.76 53.8 -23.1 -36.1

9.0 7.95 34.9 3.10 25.9 -8.7 0.79 54.8 -23.1 -35.9

10.0 9.98 35.1 3.23 25.1 -8.6 0.81 55.5 -23.1 -35.9

4.0

3.5

3.0

2.5

2.0

ηt[%]

Pout[W] ,It[A]

1.5

1.0

0.5

0.0 0 2 4 6 8 10 12

Pin[dBm]

Gp R..Loss It ηt 2fo 3fo

Remarks: “-“ is out of range.

Pout

ηt

f=155MHz Vdd=7.2V Pin=5mW Idq1=50mA Idq2=200mA

ηt[%]

Application Note for Silicon RF Power Semiconductors

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