APPLICATION NOTE
SUBJECT: RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD35HUF2
- Frequency: 135-175MHz
- Typical input power: 3W
- Typical output power: 40W
- Quiescent current: 500mA
Silicon RF Power Semiconductors
Document NO. AN-VHF-048
Date : 27thMay 2011
Prepared : Y.Koashi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 5A
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
RF IN RF OUT
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
1/16
Contents
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable ---------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
2/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
ML2
ML2
ML2
ML1
ML1
ML1
W=2.0
L=11.0
W=2.0
W=2.0
W=4.0
L=5.0
W=4.6
L=5.3
W=3.6
L=2.9
W=1.8
L=15.0
W=1.2
L=20.0
W=2.0
L=16.0
W=1.2
L2L3L4
L5
C1
C11
C13
C15
C17
C18
C20
C26
C27
C28
C29
R2
Source
Electrode1
Source
Electrode4
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
1. Equivalent Circuitry
- AN-VHF-048-
RFOUT
ML2ML1
ML2
W=2.0
L=9.0
Drain Bias
C31 C32
L=5.0
ML2
W=2.0
C30
L6
ML2
VIA
VIA
C25
C24
C23
C22
C21
C19
VIA
ML2, T=1.1
L=15.0
ML1
ML1 ML1
C16
C14
C12
Source
Electrode2
RD35HUF2
Source
Electrode3
R1
C8
C9
R3
C10
W=4.0
L=3.0
W=2.2
L=3.0
VIA
VIA
C7
L=18.0
L=10.0
L1
W=2.0
Gate Bias
L=4.0
C2 C3 C4 C5 C6
ML2
RF IN
Application Note for Silicon RF Power Semiconductors
3/16
2. PCB Layout
10n
10n
TOP VIEW (Layer 1)
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
BOARD OUTLINE: 75.0*46.0(mm)
0ohm
470p
22p
22p
12p
4004C
1000p
1000p
2..2K
68p
68p
68p
47p
47p
BOTTOM VIEW (Layer 4), Perspective through Top View
1000p
1000p
8005C
8002C
22p
22p
22p
22p
22p
18p
470p
24p
8003C
15p
100p
16ohm
16ohm
100p
15p
15p
15p
15p
47p
47p
15p
Application Note for Silicon RF Power Semiconductors
4/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-VHF-048-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial TotalCompletedThickness (included resist coating): 1.6mm
Layer1 ( Copper T: 43um with Gold Plating)
200um
Prepreg
Layer2 (CopperT:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (CopperT:35um)
Layer4 ( Copper T: 43um with Gold Plating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
5/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
3. Standard Land Pattern Dimensions
=
.
a
i
D
- AN-VHF-048-
6.52.8 13.54.9 3.5
9
.
4
8.3
3.3
3.8
3.2
18.0
19.7
23.4 25.4
UNIT: mm
Application Note for Silicon RF Power Semiconductors
6/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
4. Component List and Standard Deliverable
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD35HUF2 1 Mitsubishi Electric Corporation
C 1 470 pF 3216 200V GRM31M2C2D471JY21B 1 MURATA MANUFACTURING CO.
C 2 22 pF 1608 Hi-Q 50V GQM1882C1H220JB01 1 MURATA MANUFACTURING CO.
C 3 22 pF 1608 Hi-Q 50V GQM1882C1H220JB01 1 MURATA MANUFACTURING CO.
C 4 12 pF 1608 Hi-Q 50V GQM1882C1H120JB01 1 MURATA MANUFACTURING CO.
C 5 68 pF 1608 Hi-Q 50V GQM1882C1H680JB01 1 MURATA MANUFACTURING CO.
C 6 68 pF 1608 Hi-Q 50V GQM1882C1H680JB01 1 MURATA MANUFACTURING CO.
C 7 68 pF 1608 Hi-Q 50V GQM1882C1H680JB01 1 MURATA MANUFACTURING CO.
C 8 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO.
C 9 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO.
C 10 100 pF 1608 Hi-Q 50V GQM1882C1H101JB01 1 MURATA MANUFACTURING CO.
C 11 100 pF 1608 Hi-Q 50V GQM1882C1H101JB01 1 MURATA MANUFACTURING CO.
C 12 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 13 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 14 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 15 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 16 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 17 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO.
C 18 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO.
C 19 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO.
C 20 47 pF 2012 Hi-Q 50V GQM2192C1H470JB01 1 MURATA MANUFACTURING CO.
C 21 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 22 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 23 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 24 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 25 22 pF 2012 Hi-Q 50V GQM2192C1H220JB01 1 MURATA MANUFACTURING CO.
C 26 18 pF 2012 Hi-Q 100V GQM2192C2A180JB01 1 MURATA MANUFACTURING CO.
C 27 15 pF 2012 Hi-Q 100V GQM2192C2A150JB01 1 MURATA MANUFACTURING CO.
C 28 24 pF 2012 Hi-Q 50V GQM2192C1H240JB01 1 MURATA MANUFACTURING CO.
C 29 470 pF 3216 200V GRM31M2C2D471JY21B 1 MURATA MANUFACTURING CO.
C 30 1000 pF 2012 100V GRM2162C2A102JA01B 1 MURATA MANUFACTURING CO.
C 31 1000 pF 2012 100V GRM2162C2A102JA01B 1 MURATA MANUFACTURING CO.
C 32 220 uF 35V EEUFC1V221 1 Panasonic Corporation
L 1 17 nH * Diameter: Wire=0.4mm Inside=1.6mm T/N of coils=4 1 YC CORPORATION Co.,Ltd.
L 2 10 nH 1608 LQG18HN10NJ00 1 MURATA MANUFACTURING CO.
L 3 10 nH 1608 LQG18HN10NJ00 1 MURATA MANUFACTURING CO.
L 4 8 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=2 1 YC CORPORATION Co.,Ltd.
L 5 12 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=3 1 YC CORPORATION Co.,Ltd.
L 6 25 nH * Diameter: Wire=0.8mm Inside=2.2mm T/N of coils=5 1 YC CORPORATION Co.,Ltd.
R 1 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.
R 2 16 ohm 2012 RPC10T160J 1 TAIYOSHA ELECTRIC CO.
R 3 16 ohm 2012 RPC10T160J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0196 1 Homebuilt
Rc SMA female connector PAF-S00-002 2 GIGALANE Corporation
Bc 1 Bias connector red color TM-605R 2 MSK Corporation
Bc 2 Bias connector black color TM-605B 2 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd
Sbc Support of bias connectors 2 Homebuilt
Conductiong wire 4 Homebuilt
Screw M3 10 Screw M2.6 4 Screw M2 4 * Inductor of Rolling Coil measurement condition : f=100MHz
Application Note for Silicon RF Power Semiconductors
7/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- Standard Deliverable
TYPE1 Evaluation Board assembled with all the component including the option
TYPE2 PCB (raw board)
5. Thermal Design of Heat Sink
- AN-VHF-048-
M3 Screw
M3 Screw
Pb
Tr
Junction point of MOSFET chip
Pd
R
Pe
th(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom)
Thermally connect
Heat Sink
Tch
Also, operating Tj(“Tj
Therefore T
T
Pe bottom-air
*: an instance assuming high temperature of standard ambient conditions is 60 deg. C.
=(Pout/Efficiency-Pout+Pin) x R
(delta)
”)=140 (deg. C.), in case of RD series that Tch
(op)
Pe bottom-air
=“Tj
(op)
as delta temperature between Pe bottom and ambient 60 deg. C.* is
” - Tch
(delta)
- Ta
(60deg.C.)
th(ch-Pe bottom)
=(35W/50%-35W+3) x 0.86=32.7 (deg. C.)
=140-32.7-60=47.3 (deg. C.)
(max)
(in this package)
=0.86 (deg. C./W)
=175 (deg. C.)
In terms of long-term reliability, “Tj
” has to be kept less than 140 deg. C. i.e. T
(op)
Pe bottom-air
has
to be less than 47.3 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pe bottom-air)=TPe bottom-air
/(Pout/Efficiency-Pout+Pin)=47.3/(35W/50%-35W+3)=1.2 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 1.2 deg. C./W.
For assembly method including relevant precaution, refer to AN-GEN-070
Application Note for Silicon RF Power Semiconductors
8/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
6. Typical RF Characteristics
6-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
Ta=+25deg.C
Vds=12.5V, Idq=0.5A, Pin=3W
80
70
60
ηD
Gp
16
14
12
Ta=+25deg.C
Vds=12.5V, Idq=0.5A, Pin=3W
50
40
Pout
Idd
20
10
50
40
Pout(W) , Drain Effi(%)
30
20
130 135 140 145 150 155 160 165 170 175 180
Pout
f (MHz)
Ta=+25deg. C., Vds=12.5V, Idq=0.5A, Pin=3.0W
Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.
Pin Pout
(MHz) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
130 2.65
34.8 3.0 45.7 37.3
135 2.65 34.8 3.0 46.4 43.3 11.6 5.34 60.3 64.8 -8.2
140 2.65 34.8 3.0 46.7 46.7 11.9 5.39 64.7 69.2 -9.2
145 2.65 34.8 3.0 46.7 47.1 11.9 5.25 67.0 71.6 -9.2
150 2.65 34.8 3.0 46.5 44.4 11.7 4.95 66.8 71.6 -8.7
155 2.65 34.8 3.0 46.4 43.6 11.5 4.89 66.2 71.2 -8.3
160 2.65 34.8 3.0 46.3 42.4 11.4 4.93 63.7 68.7 -8.4
165 2.65 34.8 3.0 46.6 45.3 11.8 5.19 65.0 69.6 -9.4
170 2.65 34.8 3.0 46.8 48.1 12.0 5.31 67.7 72.2 -11.0
175 2.65 34.8 3.0 46.6 46.0 11.8 5.03 68.3 73.1 -11.4
180 2.65 34.8 3.1 45.3 33.9 10.4 3.98 61.9 68.0 -7.7
10
8
6
4
30
Gp(dB)
Pout(dBm)
20
10
130 135 140 145 150 155 160 165 170 175 180
I.R.L.
f (MHz)
0
-10
-20
Input R. L. (dB) , Idd(A)
10.9 5.24 52.2 56.8 -6.6
Application Note for Silicon RF Power Semiconductors
9/16
6-2. RF Power vs.
175MHz
175MHz
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
INPUT POWER
Ta=+25deg.C,Vds=12.5V,Idq=0.5A
50
40
155MHz
30
20
10
Pout , OUTPUT POWER(W)
0
0 1 2 3 4 5 6
Pin, INPUT POWER(W)
Ta=+25deg.C,Vds=12.5V,Idq=0.5A
21
20
135MHz
135MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.5A
50
135MHz
45
155MHz
40
35
Pout , OUTPUT POWER(dBm)
30
10 20 30
Pin, INPUT POWER(dBm)
POWER GAIN
Ta=+25deg.C,Vds=12.5V,Idq=0.5A
21
155MHz
20
19
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
0 10 20 30 40 50
175MHz
155MHz
Pout, OUTPUT POWER(W)
19
135MHz
18
17
16
15
14
Gp, POWER GAIN(dB)
13
12
11
30 40 50
Pout, OUTPUT POWER(dBm)
175MHz
Application Note for Silicon RF Power Semiconductors
10/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
- AN-VHF-048-
DRAIN EFFICIENCY
Ta=+25deg.C,Vds=12.5V,Idq=0.5A
80
70
175MHz
155MHz
60
50
135MHz
40
30
ηD, DRAIN EFFICIENCY(%)
20
10
0 10 20 30 40 50
Pout, OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
6
80
70
60
50
40
30
ηD, DRAIN EFFICIENCY(%)
20
10
DRAIN CURRENT
6
155MHz
175MHz
135MHz
30 40 50
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
5
135MHz
175MHz
4
3
2
155MHz
Idd, DRAIN CURRENT(A)
1
0
0 10 20 30 40 50
Pout, OUTPUT POWER(W)
5
4
135MHz
175MHz
3
2
155MHz
Idd, DRAIN CURRENT(A)
1
0
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
11/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
INPUT RETURN LOSS
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
0
-5
-10
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
135MHz
155MHz
0 10 20 30 40 50
Pout, OUTPUT POWER(W)
Ta=+25deg. C., Vds=12.5V, Idq=0.5A
135MHz
Vgg Gp ID(RF) ηadd ηD I.R.L.
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.65 14.7 0.03 34.2 2.7 19.5 1.45 14.5 14.6 -8.9
2.65 15.7 0.04 35.3 3.4 19.6 1.64 16.5 16.7 -9.0
2.65 16.7 0.05 36.5 4.4 19.7 1.85 19.0 19.2 -9.0
2.65 17.7 0.06 37.6 5.7 19.8 2.09 21.6 21.9 -9.1
2.65 18.7 0.07 38.7 7.4 19.9 2.38 24.5 24.8 -9.2
2.65 19.7 0.09 39.8 9.5 20.0 2.68 28.0 28.3 -9.3
2.65 20.7 0.12 40.8 12.0 20.1 3.01 31.6 32.0 -9.4
2.65 21.7 0.15 41.8 15.1 20.1 3.39 35.4 35.7 -9.5
2.65 23.7 0.23 43.7 23.3 20.0 3.76 49.0 49.5 -9.8
2.65 24.7 0.29 44.3 26.8 19.6 4.09 51.8 52.4 -9.9
2.65 25.7 0.37 44.7 29.7 19.1 4.36 53.8 54.4 -9.9
2.65 26.7 0.46 45.1 32.6 18.5 4.59 56.1 56.9 -9.8
2.65 27.6 0.58 45.4 34.9 17.8 4.75 57.9 58.9 -9.7
2.65 28.6 0.73 45.7 36.8 17.0 4.88 59.1 60.3 -9.5
2.65 29.6 0.91 45.8 38.3 16.2 4.98 60.1 61.5 -9.3
2.65 30.6 1.14 46.0 39.5 15.4 5.06 60.6 62.4 -9.1
2.65 31.5 1.42 46.1 40.6 14.6 5.14 61.0 63.2 -9.0
2.65 32.5 1.78 46.2 41.5 13.7 5.21 61.0 63.7 -8.8
2.65 33.4 2.20 46.3 42.3 12.8 5.28 60.8 64.2 -8.7
2.65 34.4 2.73 46.3 43.0 12.0 5.33 60.5 64.6 -8.6
2.65 35.3 3.38 46.4 43.6 11.1 5.36 59.9 65.0 -8.5
2.65 36.2 4.18 46.4 44.1 10.2 5.40 59.1 65.3 -8.4
2.65 37.1 5.13 46.5 44.5 9.4 5.44 57.9 65.5 -8.3
2.65 38.0 6.26 46.5 44.9 8.6 5.46 56.6 65.8 -8.1
Pin Pout
175MHz
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
0
-5
135MHz
-10
155MHz
175MHz
-15
I.R.L., INPUT RETURN LOSS (dB)
-20
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
12/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
155MHz
Vgg Gp ID(RF) ηadd ηD I.R.L.
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.65 15.3 0.03 35.1 3.3 19.8 1.41 18.2 18.4 -9.5
2.65 16.3 0.04 36.2 4.2 19.9 1.59 20.8 21.1 -9.5
2.65 17.3 0.05 37.3 5.4 20.0 1.78 23.9 24.2 -9.6
2.65 18.3 0.07 38.4 6.9 20.1 2.00 27.2 27.5 -9.7
2.65 19.3 0.09 39.5 8.8 20.2 2.26 30.9 31.2 -9.8
2.65 20.3 0.11 40.5 11.2 20.2 2.54 35.0 35.3 -9.9
2.65 21.3 0.13 41.5 14.0 20.2 2.85 39.0 39.4 -10.0
2.65 23.2 0.21 43.3 21.1 20.0 3.18 52.8 53.3 -10.1
2.65 24.2 0.26 43.9 24.8 19.7 3.48 56.4 57.0 -10.2
2.65 25.2 0.33 44.5 28.0 19.3 3.74 59.1 59.8 -10.2
2.65 26.2 0.42 44.9 31.0 18.7 3.96 61.7 62.5 -10.1
2.65 27.2 0.52 45.3 33.5 18.1 4.15 63.6 64.6 -9.9
2.65 28.2 0.66 45.5 35.7 17.3 4.30 65.1 66.4 -9.6
2.65 29.2 0.83 45.7 37.5 16.5 4.43 66.2 67.7 -9.4
2.65 30.2 1.04 45.9 38.9 15.7 4.54 66.8 68.6 -9.2
2.65 31.2 1.31 46.0 40.2 14.9 4.63 67.3 69.5 -9.0
2.65 32.1 1.64 46.2 41.2 14.0 4.71 67.2 70.0 -8.8
2.65 33.1 2.03 46.2 42.1 13.2 4.79 67.0 70.4 -8.7
2.65 34.0 2.53 46.3 42.9 12.3 4.85 66.6 70.8 -8.5
2.65 35.0 3.15 46.4 43.6 11.4 4.90 66.0 71.2 -8.4
2.65 35.9 3.91 46.5 44.2 10.5 4.95 65.1 71.5 -8.4
2.65 36.8 4.83 46.5 44.8 9.7 5.00 63.9 71.6 -8.3
2.65 37.7 5.91 46.6 45.2 8.8 5.04 62.5 71.8 -8.2
2.65 38.5 7.05 46.6 45.7 8.1 5.06 61.0 72.1 -8.0
Pin Pout
175MHz
Vgg Gp ID(RF) ηadd ηD I.R.L.
(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.65 14.7 0.03 34.0 2.5 19.3 1.33 14.9 15.0 -10.5
2.65 15.7 0.04 35.0 3.2 19.3 1.48 17.1 17.3 -10.5
2.65 16.7 0.05 36.1 4.1 19.4 1.66 19.4 19.6 -10.5
2.65 17.7 0.06 37.1 5.2 19.5 1.86 22.0 22.2 -10.4
2.65 18.7 0.07 38.2 6.6 19.5 2.09 25.0 25.3 -10.4
2.65 19.7 0.09 39.2 8.4 19.6 2.35 28.2 28.6 -10.4
2.65 20.7 0.12 40.2 10.5 19.6 2.64 31.6 31.9 -10.4
2.65 22.6 0.18 42.1 16.2 19.5 2.94 43.5 44.0 -10.3
2.65 23.6 0.23 42.9 19.3 19.3 3.24 47.1 47.6 -10.4
2.65 24.6 0.29 43.6 22.8 19.0 3.54 50.8 51.5 -10.5
2.65 25.6 0.36 44.2 26.3 18.6 3.80 54.6 55.4 -10.6
2.65 26.6 0.45 44.7 29.7 18.2 4.04 57.9 58.8 -10.7
2.65 27.6 0.57 45.2 32.9 17.6 4.26 60.7 61.7 -10.8
2.65 28.6 0.72 45.5 35.8 17.0 4.44 63.2 64.5 -10.9
2.65 29.6 0.91 45.8 38.2 16.3 4.59 65.1 66.7 -11.0
2.65 30.6 1.14 46.1 40.4 15.5 4.71 66.6 68.5 -11.1
2.65 31.6 1.43 46.2 42.1 14.7 4.81 67.5 69.9 -11.2
2.65 32.5 1.78 46.4 43.5 13.9 4.89 68.3 71.2 -11.2
2.65 33.5 2.24 46.5 44.6 13.0 4.96 68.3 71.9 -11.3
2.65 34.4 2.79 46.6 45.5 12.1 5.01 68.2 72.6 -11.3
2.65 35.4 3.46 46.7 46.2 11.3 5.05 67.8 73.3 -11.4
2.65 36.3 4.28 46.7 46.9 10.4 5.09 67.0 73.7 -11.5
2.65 37.2 5.29 46.8 47.4 9.5 5.13 65.7 74.0 -11.5
2.65 38.1 6.48 46.8 47.9 8.7 5.15 64.3 74.3 -11.6
Pin Pout
Application Note for Silicon RF Power Semiconductors
13/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
6-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY
Pin=3W
Ta=+25deg.C,Vds=12.5V
50
175MHz
Pin=3W
Ta=+25deg.C,Vds=12.5V
80
155MHz
- AN-VHF-048-
175MHz
45
40
135MHz
155MHz
35
Pout , OUTPUT POWER(W)
30
200 400 600 800 1000 1200 1400
Idq, DRAIN QUIESCENT CURRENT(mA)
70
60
135MHz
50
ηD, DRAIN EFFICIENCY (%)
40
200 400 600 800 1000 1200 1400
IDQ, DRAIN QUIESCENT CURRENT(mA)
Ta=+25deg. C., Vds=12.5V, Pin=3.0W
135MHz Vgg Idq Idd ηD ηadd Gain I.R.L.
(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 300 34.8 3.0 46.4 43.4 5.25 65.1 60.6 11.6 -8.8
2.65 363 34.8 3.0 46.4 43.6 5.28 65.1 60.6 11.6 -8.9
2.68 438 34.8 3.0 46.4 43.8 5.30 65.1 60.6 11.6 -8.9
2.70 513 34.8 3.0 46.4 44.0 5.31 65.2 60.7 11.6 -8.9
2.73 600 34.8 3.0 46.5 44.2 5.34 65.2 60.7 11.6 -8.9
2.75 688 34.8 3.0 46.5 44.4 5.36 65.2 60.8 11.7 -8.9
2.78 788 34.8 3.0 46.5 44.6 5.38 65.4 60.9 11.7 -8.9
2.80 875 34.8 3.0 46.5 44.8 5.40 65.3 60.9 11.7 -8.9
2.82 1000 34.8 3.0 46.5 45.0 5.41 65.5 61.1 11.7 -8.9
2.85 1125 34.8 3.0 46.6 45.2 5.44 65.5 61.1 11.8 -8.9
2.88 1250 34.8 3.0 46.6 45.4 5.46 65.5 61.1 11.8 -8.9
155MHz Vgg Idq Idd ηD ηadd Gain I.R.L.
(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 300 34.8 3.0 46.3 42.8 4.79 70.7 65.7 11.5 -8.4
2.65 363 34.8 3.0 46.3 42.9 4.80 70.7 65.8 11.5 -8.4
2.68 438 34.8 3.0 46.3 43.1 4.83 70.6 65.7 11.5 -8.4
2.70 513 34.8 3.0 46.4 43.2 4.85 70.5 65.6 11.6 -8.4
2.73 600 34.8 3.0 46.4 43.4 4.88 70.4 65.6 11.6 -8.4
2.75 688 34.8 3.0 46.4 43.6 4.90 70.4 65.5 11.6 -8.5
2.78 788 34.8 3.0 46.4 43.8 4.93 70.3 65.5 11.6 -8.5
2.80 875 34.8 3.0 46.4 43.9 4.94 70.4 65.6 11.6 -8.5
2.82 1000 34.8 3.0 46.4 44.1 4.96 70.4 65.6 11.7 -8.5
2.85 1125 34.8 3.0 46.5 44.3 4.99 70.3 65.5 11.7 -8.5
2.88 1250 34.8 3.0 46.5 44.5 5.01 70.2 65.5 11.7 -8.5
175MHz Vgg Idq Idd ηD ηadd Gain I.R.L.
(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 288 34.8 3.0 46.6 46.0 5.04 72.3 67.5 11.8 -11.4
2.65 363 34.8 3.0 46.6 46.1 5.04 72.3 67.6 11.8 -11.4
2.68 425 34.8 3.0 46.6 46.2 5.05 72.4 67.6 11.8 -11.4
2.70 500 34.8 3.0 46.7 46.3 5.06 72.3 67.6 11.8 -11.4
2.73 588 34.8 3.0 46.7 46.4 5.08 72.4 67.7 11.9 -11.4
2.75 688 34.8 3.0 46.7 46.5 5.09 72.4 67.7 11.9 -11.4
2.78 788 34.8 3.0 46.7 46.7 5.10 72.4 67.7 11.9 -11.4
2.80 875 34.8 3.0 46.7 46.8 5.10 72.5 67.8 11.9 -11.4
2.82 988 34.8 3.0 46.7 46.9 5.11 72.5 67.9 11.9 -11.4
2.85 1113 34.8 3.0 46.7 47.0 5.13 72.6 67.9 11.9 -11.4
2.88 1238 34.8 3.0 46.7 47.1 5.14 72.5 67.9 11.9 -11.4
Pin Pout
Pin Pout
Pin Pout
Application Note for Silicon RF Power Semiconductors
14/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
6-4. DC Power Supply vs.
Pin=3W
Ta=+25deg.C, Vgg fixedatIdq=0.5A Vds=12.5V
- AN-VHF-048-
OUTPUT POWER and DRAIN EFFICIENCY
Pin=3W
Ta=+25deg.C, Vgg fixedatIdq=0.5A Vds=12.5V
60
175MHz
50
135MHz
40
30
Pout , OUTPUT POWER(W)
20
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
155MHz
DRAIN CURRENT
Pin=3W
Ta=+25deg.C, Vgg fixedat Idq=0.5A Vds=12.5V
8
80
175MHz
70
155MHz
60
135MHz
50
ηD, DRAIN EFFICIENCY(%)
40
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
7
6
5
4
Idd, DRAIN CURRENT(A)
3
2
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
135MHz
175MHz
155MHz
Application Note for Silicon RF Power Semiconductors
15/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
Ta=+25deg. C., Pin=3.0W
135MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.69 10.99 438 34.8 3.0 45.4 34.5 4.76 66.4 60.6 10.6 -8.7
2.69 11.5 463 34.8 3.0 45.7 37.3 4.95 66.0 60.7 10.9 -8.8
2.69 11.99 475 34.8 3.0 46.0 40.2 5.13 65.8 60.9 11.2 -8.8
2.69 12.49 475 34.8 3.0 46.3 43.0 5.30 65.5 60.9 11.5 -8.8
2.69 13 488 34.8 3.0 46.6 46.1 5.48 65.2 61.0 11.8 -8.9
2.69 13.49 500 34.8 3.0 46.9 49.1 5.64 65.1 61.1 12.1 -8.9
2.69 13.99 513 34.8 3.0 47.2 52.2 5.80 64.9 61.1 12.4 -8.9
2.69 14.5 525 34.8 3.0 47.4 55.5 5.98 64.5 61.0 12.6 -9.0
Pin Pout
155MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.70 10.99 463 34.8 3.0 45.3 33.7 4.26 72.4 65.9 10.5 -8.4
2.70 11.5 475 34.8 3.0 45.6 36.5 4.43 72.2 66.3 10.8 -8.4
2.70 11.99 488 34.8 3.0 46.0 39.4 4.59 72.0 66.5 11.2 -8.5
2.70 12.49 500 34.8 3.0 46.3 42.3 4.75 71.9 66.7 11.5 -8.5
2.70 13 513 34.8 3.0 46.6 45.4 4.91 71.6 66.9 11.8 -8.5
2.70 13.49 513 34.8 3.0 46.9 48.6 5.06 71.6 67.1 12.1 -8.6
2.70 13.99 525 34.8 3.0 47.1 51.8 5.21 71.4 67.3 12.3 -8.6
2.70 14.5 538 34.8 3.0 47.4 55.1 5.38 71.2 67.3 12.6 -8.7
175MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.70 10.99 463 34.8 3.0 45.5 35.6 4.40 74.0 67.7 10.7 -11.5
2.70 11.5 475 34.8 3.0 45.9 38.7 4.60 73.6 67.8 11.1 -11.4
2.70 11.99 488 34.8 3.0 46.2 41.8 4.79 73.3 68.0 11.4 -11.4
2.70 12.49 488 34.8 3.0 46.5 45.1 4.98 73.0 68.1 11.7 -11.4
2.70 13 500 34.8 3.0 46.9 48.5 5.18 72.5 68.0 12.0 -11.4
2.70 13.49 513 34.8 3.0 47.1 51.9 5.36 72.2 68.0 12.3 -11.3
2.70 13.99 525 34.8 3.0 47.4 55.3 5.55 71.7 67.8 12.6 -11.3
2.70 14.5 538 34.8 3.0 47.7 58.8 5.74 71.2 67.6 12.9 -11.3
Pin Pout
Pin Pout
Application Note for Silicon RF Power Semiconductors
16/16
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