MITSUBISHI AN-VHF-048 User Manual
APPLICATION NOTE
SUBJECT: RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board
Features:
- The evaluation board for RD35HUF2
- Frequency: 135-175MHz
- Typical input power: 3W
- Typical output power: 40W
- Quiescent current: 500mA
Silicon RF Power Semiconductors
Document NO. AN-VHF-048
Date : 27thMay 2011
Prepared : Y.Koashi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 5A
- Surface-mounted RF power amplifier structure
Gate Bias Drain Bias
RF IN RF OUT
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
1/16
Contents
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable ---------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
2/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
ML2
ML2
ML2
ML1
ML1
ML1
W=2.0
L=11.0
W=2.0
W=2.0
W=4.0
L=5.0
W=4.6
L=5.3
W=3.6
L=2.9
W=1.8
L=15.0
W=1.2
L=20.0
W=2.0
L=16.0
W=1.2
L2L3L4
L5
C1
C11
C13
C15
C17
C18
C20
C26
C27
C28
C29
R2
Source
Electrode1
Source
Electrode4
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
1. Equivalent Circuitry
- AN-VHF-048-
RFOUT
ML2ML1
ML2
W=2.0
L=9.0
Drain Bias
C31 C32
L=5.0
ML2
W=2.0
C30
L6
ML2
VIA
VIA
C25
C24
C23
C22
C21
C19
VIA
ML2, T=1.1
L=15.0
ML1
ML1 ML1
C16
C14
C12
Source
Electrode2
RD35HUF2
Source
Electrode3
R1
C8
C9
R3
C10
W=4.0
L=3.0
W=2.2
L=3.0
VIA
VIA
C7
L=18.0
L=10.0
L1
W=2.0
Gate Bias
L=4.0
C2 C3 C4 C5 C6
ML2
RF IN
Application Note for Silicon RF Power Semiconductors
3/16
2. PCB Layout
10n
10n
TOP VIEW (Layer 1)
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
BOARD OUTLINE: 75.0*46.0(mm)
0ohm
470p
22p
22p
12p
4004C
1000p
1000p
2..2K
68p
68p
68p
47p
47p
BOTTOM VIEW (Layer 4), Perspective through Top View
1000p
1000p
8005C
8002C
22p
22p
22p
22p
22p
18p
470p
24p
8003C
15p
100p
16ohm
16ohm
100p
15p
15p
15p
15p
47p
47p
15p
Application Note for Silicon RF Power Semiconductors
4/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-VHF-048-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial TotalCompletedThickness (included resist coating): 1.6mm
Layer1 ( Copper T: 43um with Gold Plating)
200um
Prepreg
Layer2 (CopperT:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (CopperT:35um)
Layer4 ( Copper T: 43um with Gold Plating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
5/16
Loading...