MITSUBISHI AN-VHF-047-A User Manual

APPLICATION NOTE

Silicon RF Power Semiconductors

Document NO. AN-VHF-047-A

th

Date : 15

Rev. date : 22

Prepared : Y.Takase

S.Kametani

Confirmed :T.Okawa

Sep. ‘09

th

Jun. 2010

SUBJECT: RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V

SUMMARY:

This application note shows the RF wide band characteristics data

(Frequency characteristics, Pout vs. Pin characteristics) at 135 to 175 MHz band.

- Sample history :

RD07MUS2B: Lot number “083YH-G”

- Evaluate conditions :

RD07MUS2B @f= 135 to 175MHz : Vds=7.2V, Idq=250mA (Vgs adjust)

- Results :

Page 2. shows the typical RF characteristics (Frequency characteristics) data.

Page 3-6. shows the typical RF characteristics (Pout vs. Pin characteristics) data.

Page 7-9. shows the typical RF characteristics (Pout vs. Vgg characteristics) data.

Page 10. shows the equivalent circuit.

.

Application Note for Silicon RF Power Semiconductors

1/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

f

RD07MUS2B single-stage amplifier Frequency characteristics

- AN-VHF-047-A-

@ Vdd=7.2V, Idq=250mA, Pi=0.3W (24.77dBm)

Gp

ηd

16

14

12

10

8

6

4

Po(W), Gp(dB), Ids (A)

Po

P.A.E.

80

75

70

65

60

55

ηd(%), P.A.E.(%)

Ids

50

2

0

135 140 145 150 155 160 165 170 175

f (MHz)

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 135 7.04 38.5 13.7 1.47 66.7 63.9
140 7.24 38.6 13.8 1.54 65.5 62.7
145 7.19 38.6 13.8 1.52 65.8 63.1
150 7.33 38.7 13.9 1.51 67.5 64.7
155 7.52 38.8 14.0 1.50 69.4 66.7
160 7.67 38.8 14.1 1.49 71.4 68.6
165 7.70 38.9 14.1 1.47 72.6 69.8
170 7.62 38.8 14.0 1.45 73.0 70.2
175 7.15 38.5 13.8 1.41 70.4 67.4

Po Po Gp Ids ηdP.A.E.

45

40

Application Note for Silicon RF Power Semiconductors

2/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics

@ Vdd=7.2V, Idq=250mA, f=135MHz, 155MHz, 175MHz

10

9

8

7

6

5

Po (W)

4

3

2

1

0

0.000 0.200 0.400 0.600 0.800

135MHz

155MHz

175MHz

Pi (W)

30

25

175MHz

155MHz

20

15

Gp (dB)

10

135MHz

5

40

35

30

25

20

Po (dBm)

15

10

5

0

2.0

1.6

1.2

Ids (A)

0.8

0.4

175MHz

155MHz

135MHz

0 5 10 15 20 25 30

Pi (dBm )

155MHz

135MHz

175MHz

0

0 5 10 15 20 25 30

Pi (dBm)

0.0

0 5 10 15 20 25 30

Pi (dBm )

80

70

60

50

40

P.A.E.(%)

30

20

10

175MHz

135MHz

155MHz

0

0 5 10 15 20 25 30

Pi (dBm)

80

70

175MHz

60

50

40

ηd(%)

30

20

10

0

0 5 10 15 20 25 30

Pi (dBm )

135MHz

155MHz

Application Note for Silicon RF Power Semiconductors

3/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics data

@ f=135MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.29 0.001 0.0 0.15 21.7 21.7 0.30 6.7 6.6

7.29 0.001 1.0 0.18 22.7 21.6 0.32 8.0 7.9

7.29 0.002 2.1 0.23 23.7 21.6 0.34 9.5 9.5

7.29 0.002 3.1 0.29 24.6 21.5 0.36 11.0 11.0

7.29 0.003 4.0 0.36 25.6 21.5 0.38 13.0 12.9

7.28 0.003 5.1 0.45 26.5 21.4 0.42 14.9 14.8

7.28 0.004 6.1 0.56 27.5 21.4 0.45 17.0 16.9

7.27 0.005 7.1 0.71 28.5 21.4 0.50 19.6 19.4

7.27 0.006 8.1 0.89 29.5 21.4 0.55 22.1 22.0

7.27 0.008 9.0 1.13 30.5 21.5 0.61 25.4 25.2

7.26 0.010 10.1 1.41 31.5 21.4 0.68 28.6 28.4

7.25 0.013 11.0 1.79 32.5 21.5 0.76 32.6 32.4

7.25 0.016 12.0 2.21 33.4 21.4 0.84 36.2 36.0

7.24 0.020 13.0 2.69 34.3 21.3 0.93 40.1 39.8

7.23 0.025 14.0 3.15 35.0 21.0 1.00 43.4 43.0

7.22 0.032 15.0 3.63 35.6 20.6 1.08 46.6 46.2

7.22 0.040 16.0 4.10 36.1 20.1 1.15 49.5 49.0

7.22 0.051 17.0 4.58 36.6 19.6 1.21 52.4 51.8

7.21 0.064 18.1 5.04 37.0 19.0 1.27 55.1 54.4

7.21 0.081 19.1 5.45 37.4 18.3 1.32 57.3 56.5

7.20 0.102 20.1 5.84 37.7 17.6 1.36 59.5 58.5

7.20 0.129 21.1 6.17 37.9 16.8 1.40 61.4 60.1

7.20 0.163 22.1 6.46 38.1 16.0 1.43 62.9 61.3

7.20 0.206 23.1 6.69 38.3 15.1 1.45 64.3 62.3

7.20 0.260 24.1 6.85 38.4 14.2 1.45 65.4 62.9

7.20 0.328 25.2 6.98 38.4 13.3 1.46 66.4 63.2

7.20 0.414 26.2 7.10 38.5 12.4 1.47 67.1 63.2

7.20 0.521 27.2 7.22 38.6 11.4 1.48 67.7 62.8

7.20 0.660 28.2 7.32 38.6 10.4 1.50 68.0 61.9

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

4/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

@ f=155MHz

, Idq=250mA

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.32 0.001 0.0 0.28 24.4 24.4 0.34 11.1 11.0

7.31 0.001 1.0 0.35 25.4 24.4 0.36 13.2 13.1

7.31 0.002 2.0 0.44 26.4 24.4 0.39 15.4 15.4

7.31 0.002 3.0 0.55 27.4 24.4 0.42 17.9 17.8

7.31 0.003 4.0 0.69 28.4 24.4 0.46 20.6 20.5

7.30 0.003 5.0 0.88 29.4 24.4 0.51 23.7 23.7

7.30 0.004 6.0 1.10 30.4 24.4 0.56 26.9 26.8

7.29 0.005 7.0 1.40 31.5 24.5 0.62 30.9 30.8

7.28 0.006 8.0 1.75 32.4 24.4 0.70 34.5 34.4

7.28 0.008 9.0 2.19 33.4 24.4 0.77 38.8 38.6

7.27 0.010 10.0 2.65 34.2 24.2 0.86 42.5 42.3

7.26 0.013 11.0 3.16 35.0 24.0 0.94 46.3 46.1

7.25 0.016 12.0 3.64 35.6 23.6 1.02 49.4 49.2

7.24 0.020 13.0 4.11 36.1 23.1 1.08 52.5 52.2

7.24 0.025 14.0 4.56 36.6 22.6 1.14 55.0 54.7

7.23 0.032 15.0 4.98 37.0 22.0 1.20 57.5 57.1

7.23 0.040 16.0 5.37 37.3 21.3 1.25 59.5 59.1

7.23 0.050 17.0 5.74 37.6 20.6 1.29 61.4 60.9

7.22 0.063 18.0 6.07 37.8 19.8 1.33 63.0 62.4

7.22 0.079 19.0 6.38 38.0 19.1 1.37 64.5 63.7

7.21 0.099 20.0 6.67 38.2 18.3 1.40 65.8 64.9

7.21 0.125 21.0 6.90 38.4 17.4 1.43 66.8 65.6

7.21 0.157 22.0 7.12 38.5 16.6 1.46 67.7 66.3

7.20 0.197 22.9 7.29 38.6 15.7 1.48 68.5 66.6

7.20 0.248 23.9 7.44 38.7 14.8 1.49 69.2 66.9

7.20 0.312 24.9 7.56 38.8 13.8 1.51 69.6 66.8

7.20 0.392 25.9 7.68 38.9 12.9 1.52 70.1 66.5

7.20 0.493 26.9 7.77 38.9 12.0 1.53 70.5 66.0

7.20 0.620 27.9 7.84 38.9 11.0 1.54 70.8 65.2

Application Note for Silicon RF Power Semiconductors

5/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

@ f=175MHz

, Idq=250mA

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.30 0.001 0.2 0.32 25.0 24.8 0.35 12.5 12.4

7.30 0.001 1.5 0.41 26.1 24.7 0.37 15.2 15.2

7.30 0.002 2.6 0.52 27.2 24.6 0.39 18.1 18.0

7.29 0.002 3.5 0.64 28.1 24.6 0.43 20.5 20.4

7.29 0.003 4.6 0.83 29.2 24.7 0.46 24.9 24.8

7.29 0.004 5.5 1.04 30.2 24.7 0.51 28.0 27.9

7.28 0.004 6.3 1.32 31.2 24.9 0.56 32.3 32.2

7.28 0.006 7.4 1.67 32.2 24.8 0.62 37.2 37.1

7.27 0.007 8.3 2.04 33.1 24.8 0.68 41.3 41.1

7.27 0.009 9.5 2.45 33.9 24.3 0.74 45.4 45.3

7.26 0.011 10.3 2.81 34.5 24.2 0.80 48.1 48.0

7.26 0.014 11.5 3.15 35.0 23.5 0.86 50.5 50.3

7.25 0.017 12.3 3.47 35.4 23.1 0.92 52.3 52.0

7.25 0.022 13.4 3.81 35.8 22.4 0.97 54.0 53.6

7.24 0.027 14.4 4.11 36.1 21.7 1.03 55.4 55.0

7.24 0.034 15.3 4.45 36.5 21.1 1.08 57.2 56.7

7.23 0.042 16.3 4.79 36.8 20.5 1.13 58.9 58.3

7.23 0.053 17.2 5.17 37.1 19.9 1.18 60.8 60.2

7.22 0.066 18.2 5.49 37.4 19.2 1.22 62.3 61.6

7.22 0.082 19.1 5.82 37.6 18.5 1.26 63.9 63.0

7.22 0.103 20.1 6.13 37.9 17.7 1.30 65.4 64.3

7.21 0.129 21.1 6.40 38.1 17.0 1.33 66.8 65.5

7.21 0.162 22.1 6.65 38.2 16.1 1.36 68.0 66.3

7.21 0.203 23.1 6.85 38.4 15.3 1.38 69.0 66.9

7.21 0.255 24.1 7.02 38.5 14.4 1.40 69.8 67.2

7.21 0.321 25.1 7.17 38.6 13.5 1.41 70.5 67.3

7.21 0.403 26.1 7.29 38.6 12.6 1.42 71.0 67.1

7.20 0.505 27.0 7.40 38.7 11.7 1.43 71.6 66.7

7.20 0.636 28.0 7.49 38.7 10.7 1.44 72.1 66.0

Application Note for Silicon RF Power Semiconductors

6/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

RD07MUS2B single-stage amplifier Pout vs. Vgg characteristics

@ Vdd=7.2V, Pi=0.3W (=24.77dBm), f=135MHz, 155MHz, 175MHz

10

2.4

8

6

@f=155MHz

Po (W)

4

2

@f=135MHz

0

012

Vgg (V)

@f=175MHz

2.0

1.6

1.2

Ids (A)

0.8

0.4

0.0

012

80

70

60

50

40

P.A.E. (%)

30

20

10

0

012

@f=175MHz

@f=155MHz

@f=135MHz

Vgg (V)

80

70

60

50

40

ηd (%)

30

20

10

0

012

@f=155MHz

@f=135MHz

Vgg (V)

@f=175MHz

@f=135MHz

Vgg (V)

@f=175MHz

@f=155MHz

Application Note for Silicon RF Power Semiconductors

7/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

RD07MUS2B single-stage amplifier Pout vs. Vgg characteristics data

@ f=135MHz

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 1.31 31.2 0.56 32.8 25.3

0.1 0 1.70 32.3 0.65 36.3 30.0

0.2 0 2.00 33.0 0.72 38.6 32.8

0.3 0 2.30 33.6 0.78 40.6 35.3

0.4 0 2.59 34.1 0.85 42.6 37.6

0.5 0 3.01 34.8 0.92 45.4 40.9

0.6 0 3.56 35.5 1.01 48.9 44.8

0.7 0 4.17 36.2 1.10 52.7 48.9

0.8 0 4.82 36.8 1.19 56.3 52.8

0.9 0 5.38 37.3 1.27 59.0 55.7

1.0 0 5.90 37.7 1.33 61.6 58.4

1.1 0 6.31 38.0 1.38 63.2 60.2

1.2 0.01 6.58 38.2 1.42 64.3 61.4

1.3 0.04 6.75 38.3 1.45 64.9 62.0

1.4 0.14 6.80 38.3 1.45 65.1 62.3

1.5 0.36 6.82 38.3 1.45 65.3 62.4

1.6 0.71 6.83 38.3 1.45 65.4 62.6

1.7 1.14 6.84 38.4 1.45 65.6 62.7

1.8 1.57 6.85 38.4 1.45 65.7 62.8

1.9 1.99 6.86 38.4 1.45 65.8 62.9

2.0 2.37 6.89 38.4 1.46 65.8 62.9

, Pin=0.3W (=24.77dBm)

Application Note for Silicon RF Power Semiconductors

8/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

- AN-VHF-047-A-

@ f=155MHz

, Pin=0.3W (=24.77dBm)

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 2.63 34.2 0.73 50.4 44.7

0.1 0 2.92 34.7 0.78 51.8 46.5

0.2 0 3.17 35.0 0.83 53.0 48.0

0.3 0 3.45 35.4 0.88 54.3 49.6

0.4 0 3.74 35.7 0.94 55.6 51.2

0.5 0 4.07 36.1 0.99 57.0 52.8

0.6 0 4.39 36.4 1.05 58.4 54.4

0.7 0 4.74 36.8 1.10 59.8 56.0

0.8 0 5.09 37.1 1.16 61.2 57.5

0.9 0 5.45 37.4 1.21 62.6 59.1

1.0 0 5.81 37.6 1.26 63.9 60.6

1.1 0 6.16 37.9 1.31 65.2 62.0

1.2 0.01 6.50 38.1 1.36 66.3 63.2

1.3 0.04 6.84 38.4 1.41 67.4 64.4

1.4 0.14 7.17 38.6 1.46 68.3 65.4

1.5 0.36 7.46 38.7 1.50 69.2 66.4

1.6 0.71 7.76 38.9 1.54 69.9 67.2

1.7 1.14 8.01 39.0 1.58 70.5 67.8

1.8 1.57 8.24 39.2 1.61 71.0 68.4

1.9 1.99 8.48 39.3 1.65 71.3 68.8

2.0 2.37 8.68 39.4 1.68 71.6 69.2

@ f=175MHz

, Pin=0.3W (=24.77dBm)

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 3.90 35.9 0.86 63.2 58.3

0.1 0 4.11 36.1 0.90 63.3 58.7

0.2 0 4.28 36.3 0.94 63.4 59.0

0.3 0 4.47 36.5 0.98 63.7 59.4

0.4 0 4.68 36.7 1.02 64.0 59.9

0.5 0 4.90 36.9 1.06 64.3 60.4

0.6 0 5.12 37.1 1.10 64.8 61.0

0.7 0 5.34 37.3 1.14 65.3 61.6

0.8 0 5.58 37.5 1.18 65.8 62.3

0.9 0 5.79 37.6 1.21 66.3 62.9

1.0 0 6.00 37.8 1.25 66.9 63.6

1.1 0 6.22 37.9 1.28 67.6 64.3

1.2 0.01 6.44 38.1 1.31 68.1 65.0

1.3 0.04 6.63 38.2 1.34 68.7 65.6

1.4 0.14 6.79 38.3 1.36 69.2 66.1

1.5 0.36 6.93 38.4 1.39 69.6 66.6

1.6 0.71 7.10 38.5 1.41 70.0 67.0

1.7 1.14 7.23 38.6 1.43 70.4 67.4

1.8 1.57 7.34 38.7 1.44 70.6 67.7

1.9 1.99 7.45 38.7 1.46 70.9 68.1

2.0 2.37 7.56 38.8 1.48 71.1 68.3

Application Note for Silicon RF Power Semiconductors

9/10

RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V

φ

)

φ

)

,φ

)

,φ

)

φ

)

V

r

- AN-VHF-047-A-

RD07MUS2B single-stage amplifier equivalent circuit (@f=135 to 175MHz)

RF-in

3.5mm

C1

C2

1.5mm

L1

5.5mm

3mm

C3

Vgg

C10

C9

L2

4.5mm

W

21mm

R2

5mm

9.5mm

R1

(f=135-175MHz)

RD07MUS2B

7.5mm

C4

1mm

L3

3mm

C5

21mm

3mm

Vdd

W

L5

3.5mm

Note:Board material- Glass-Epoxy Substrate

Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm

W:Line width=1.0mm

Parts Type Value Type name

Capacitor

Resistance

Inductance

C1 100pF GRM2162C1H101GD01E
C2 56pF GRM2162C1H560GD01E
C3 43pF GRM2162C1H430GD01E
C4 22pF GRM2162C1H220GD01E
C5 22pF GRM2162C1H220GD01E
C6 100pF GRM2162C1H101GD01E
C7 20pF GRM2162C1H200GD01E
C8 100pF GRM2162C1H101GD01E

C9 22000pF GRM216R11H223KA01E
C10 1000pF GRM216R11H102KA01E
C11 1000pF GRM216R11H102KA01E
C12 22000pF GRM216R11H223KA01E
C13

R1 2.2 OHM RPC10T2R2J

R2 4.7K OHM CR1/10-472JB

L1

Diameter:0.23mm,

L2

Diameter:0.43mm,

L3

Diameter:0.23mm

L4

Diameter:0.23mm

L5

Diameter:0.23mm,

6.6nH Enameled wire 2Turns,

10.8nH Enameled wire 4Turns,

6.6nH Enameled wire 2Turns,

31.0nH Enameled wire 6Turns,

31.0nH Enameled wire 6Turns,

22µF

1.66mm (the out side diameter

1.66mm (the out side diameter

1.66mm (the out side diameter

1.66mm (the out side diameter

1.66mm (the out side diameter

Vgg

A0603

2302S

4804A

2302S

2306C

2306C

Vdd

GND

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

TAIYOSHA ELECTRIC Co.,Ltd.

Hokuriku Electric Industry Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

GND

C11

C12

7.5mm

C6

C13

L4

ende

2.5mm

4.5mm

C7

C8

RF-out

RF-in

RF-out

Application Note for Silicon RF Power Semiconductors

10/10