MITSUBISHI AN-VHF-047-A User Manual
APPLICATION NOTE
Silicon RF Power Semiconductors
Document NO. AN-VHF-047-A
th
Date : 15
Rev. date : 22
Prepared : Y.Takase
S.Kametani
Confirmed :T.Okawa
Sep. ‘09
th
Jun. 2010
SUBJECT: RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V
SUMMARY:
This application note shows the RF wide band characteristics data
(Frequency characteristics, Pout vs. Pin characteristics) at 135 to 175 MHz band.
- Sample history :
RD07MUS2B: Lot number “083YH-G”
- Evaluate conditions :
RD07MUS2B @f= 135 to 175MHz : Vds=7.2V, Idq=250mA (Vgs adjust)
- Results :
Page 2. shows the typical RF characteristics (Frequency characteristics) data.
Page 3-6. shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 7-9. shows the typical RF characteristics (Pout vs. Vgg characteristics) data.
Page 10. shows the equivalent circuit.
.
Application Note for Silicon RF Power Semiconductors
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RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V
f
RD07MUS2B single-stage amplifier Frequency characteristics
- AN-VHF-047-A-
@ Vdd=7.2V, Idq=250mA, Pi=0.3W (24.77dBm)
Gp
ηd
16
14
12
10
8
6
4
Po(W), Gp(dB), Ids (A)
Po
P.A.E.
80
75
70
65
60
55
ηd(%), P.A.E.(%)
Ids
50
2
0
135 140 145 150 155 160 165 170 175
f (MHz)
Vds
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 135 7.04 38.5 13.7 1.47 66.7 63.9
140 7.24 38.6 13.8 1.54 65.5 62.7
145 7.19 38.6 13.8 1.52 65.8 63.1
150 7.33 38.7 13.9 1.51 67.5 64.7
155 7.52 38.8 14.0 1.50 69.4 66.7
160 7.67 38.8 14.1 1.49 71.4 68.6
165 7.70 38.9 14.1 1.47 72.6 69.8
170 7.62 38.8 14.0 1.45 73.0 70.2
175 7.15 38.5 13.8 1.41 70.4 67.4
Po Po Gp Ids ηdP.A.E.
45
40
Application Note for Silicon RF Power Semiconductors
2/10
RD07MUS2B single-stage amplifier RF performance at f=135-175MHz,Vdd=7.2V
- AN-VHF-047-A-
RD07MUS2B single-stage amplifier Pout vs. Pin characteristics
@ Vdd=7.2V, Idq=250mA, f=135MHz, 155MHz, 175MHz
10
9
8
7
6
5
Po (W)
4
3
2
1
0
0.000 0.200 0.400 0.600 0.800
135MHz
155MHz
175MHz
Pi (W)
30
25
175MHz
155MHz
20
15
Gp (dB)
10
135MHz
5
40
35
30
25
20
Po (dBm)
15
10
5
0
2.0
1.6
1.2
Ids (A)
0.8
0.4
175MHz
155MHz
135MHz
0 5 10 15 20 25 30
Pi (dBm )
155MHz
135MHz
175MHz
0
0 5 10 15 20 25 30
Pi (dBm)
0.0
0 5 10 15 20 25 30
Pi (dBm )
80
70
60
50
40
P.A.E.(%)
30
20
10
175MHz
135MHz
155MHz
0
0 5 10 15 20 25 30
Pi (dBm)
80
70
175MHz
60
50
40
ηd(%)
30
20
10
0
0 5 10 15 20 25 30
Pi (dBm )
135MHz
155MHz
Application Note for Silicon RF Power Semiconductors
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