MITSUBISHI AN-UHF-127 User Manual

Download

APPLICATION NOTE

SUBJECT: RD35HUF2 single-stage amplifier with f=380-430MHz evaluation board

Features:

- The evaluation board for RD35HUF2

- Frequency: 380-430MHz

- Typical input power: 3W

- Typical output power: 46W

- Typical adjacent channel power ratio*: -42.5dBc @ output power=17.7W (42.5dBm)

Silicon RF Power Semiconductors

Document NO. AN-UHF-127 Date : 31stMay. 2011 Prepared : E.Akiyama

Y.Koashi

K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by

MIYOSHI Electronics)

*: Modulation: π/4 DQPSK, 18kbps, α=0.35, Channel-Band-Width=18 kHz, Channel-Spacing=25 kHz

- Quiescent current: 700mA

- Operating current: 6.4A @output power=46W

- 3.5A @ output power=17.7W (42.5dBm)

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

RF IN RF OUT

PCB L=75mm W=46mm

Application Note for Silicon RF Power Semiconductors

1/18

Contents

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

Page

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Standard Land Pattern Dimensions --------------------------------------

4. Component List and Standard Deliverable --------------------------------------

5. Thermal Design of Heat Sink ------------------------------------------------

6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------

3 4 6 7 8 9

9 10 14 16

Application Note for Silicon RF Power Semiconductors

2/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

1. Equivalent Circuitry

- AN-UHF-127-

Application Note for Silicon RF Power Semiconductors

3/17

2. PCB Layout

100 0

9 p

TOP VIEW (Layer 1)

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

BOARD OUTLINE: 75.0*46.0(mm)

800 4C

0ohm

330 p

27p

100 0p

2..2 K

BOTTOM VIEW (Layer 4), Perspective through Top View

100 0p

1.2p

800 2C

5 p

330 p

Application Note for Silicon RF Power Semiconductors

4/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

BOARD OUTLINE: 75.0*46.0(mm) Internal Layer (Layer 2) , Perspective Through Top View

- AN-UHF-127-

Internal Layer (Layer 3) , Perspective Through Top View

Substrate Condition

Nomial TotalCompletedThickness (included resist coating): 1.6mm

Layer1 ( CopperT: 43um withGold Plating)

200um

Prepreg

Layer2 (Copper T:35um)

930um

200um

Core

Prepreg

Er: 4.7 @ 1GHz TanD:0.018@ 1GHz

Layer3 (Copper T:35um)

Layer4 ( CopperT: 43um withGold Plating)

Material: MCL-E-679G(R), Hitachi Chemical Co.

Application Note for Silicon RF Power Semiconductors

5/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

3. Standard Land Pattern Dimensions

- AN-UHF-127-

6.52.8 13.54.9 3.5

8.3

3.3

3.8

3.2

18.0

19.7

23.4 25.4

UNIT: mm

Application Note for Silicon RF Power Semiconductors

6/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

Diameter: Wire=0.8mm Inside=2.2mm

T/N of coils=2

YC CORPORATION Co.,Ltd.

Diameter: Wire=0.8mm Inside=2.2mm

T/N of coils=4

YC CORPORATION Co.,Ltd.

- AN-UHF-127-

4. Component List

- Component List

No. Description P/N Qty Manufacturer Tr MOSFET RD35HUF2 1 Mitsubishi Electric Corporation C 1 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C 2 6 pF 1608 Hi-Q 100V GQM1882C2A6R0DB01 1 MURATA MANUFACTURING CO., LTD. C 3 27 pF 1608 Hi-Q 50V GQM1882C1H270GB01 1 MURATA MANUFACTURING CO., LTD. C 4 9 pF 1608 Hi-Q 50V GQM1882C1H9R0DB01 1 MURATA MANUFACTURING CO., LTD. C 5 18 pF 1608 Hi-Q 50V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 6 18 pF 1608 Hi-Q 50V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 7 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 8 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 10 33 pF 2012 Hi-Q 50V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C 11 33 pF 2012 Hi-Q 50V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C 12 18 pF 2012 Hi-Q 100V GQM2192C2A180JB01 1 MURATA MANUFACTURING CO., LTD. C 13 18 pF 2012 Hi-Q 100V GQM2192C2A180JB01 1 MURATA MANUFACTURING CO., LTD. C 14 5 pF 2012 Hi-Q 100V GQM2192C2A5R0CB01 1 MURATA MANUFACTURING CO., LTD. C 15 1.2 pF 2012 Hi-Q 100V GQM2194C2A1R2CB01 1 MURATA MANUFACTURING CO., LTD. C 16 9 pF 2012 Hi-Q 100V GQM2192C2A9R0DB01 1 MURATA MANUFACTURING CO., LTD. C 17 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C 18 1000 pF 2012 100V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 19 1000 pF 2012 100V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 20 220 uF 35V EEUFC1V221 1 Panasonic Corp. L 1 2.2 nH 1608 LQG18HN2N2S00 1 MURATA MANUFACTURING CO., LTD. L 2 2.2 nH 1608 LQG18HN2N2S00 1 MURATA MANUFACTURING CO., LTD. L 10 8 nH * L 11 17 nH * R 1 2.2k ohm 1608 RPC05T222J 1 TAIYOSHAELECTRIC CO.,LTD. Pb PCB MS3A0196 1 Homebuilt Rc SMA female connector PAF-S00-002 2 GIGALANECorporation Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Sbc Support of bias connectors 2 Homebuilt

Conductiong wire 4 Homebuilt Screw M3 10 Screw M2.6 4 Screw M2 4 * Inductor of Rolling Coil measurement condition : f=100MHz

- Standard Deliverable

TYPE1 Evaluation Board assembled with all the component including the option TYPE2 PCB (raw board)

Application Note for Silicon RF Power Semiconductors

7/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

5. Thermal Design of Heat Sink

- AN-UHF-127-

M3 Screw

Pb Tr

Junction point of MOSFET chip

th(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom)

Thermally connect

Heat Sink

Tch Also, operating Tj(“Tj Therefore T T

Pe bottom-air

*: an instance assuming high temperature of standard ambient conditions is 60 deg. C.

=(Pout/Efficiency-Pout+Pin) x R

(delta)

”)=140 (deg. C.), in case of RD series that Tch

(op)

Pe bottom-air

=“Tj

(op)

as delta temperature between Pe bottom and ambient 60 deg. C.* is

” - Tch

(delta)

- Ta

(60deg.C.)

th(ch-Pe bottom)

=(35W/50%-35W+3) x 0.86=32.7 (deg. C.)

=140-32.7-60=47.3 (deg. C.)

(max)

(in this package)

=0.86 (deg. C./W)

=175 (deg. C.)

In terms of long-term reliability, “Tj

” has to be kept less than 140 deg. C. i.e. T

(op)

Pe bottom-air

has to be less than 47.3 deg. C.. The thermal resistance of the heat sink to border it: Rth

(Pe bottom-air)=TPe bottom-air

/(Pout/Efficiency-Pout+Pin)=47.3/(35W/50%-35W+3)=1.2 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 1.2 deg. C./W.

For assembly method including relevant precaution, refer to AN-GEN-070

Application Note for Silicon RF Power Semiconductors

8/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

Vds=12.5V, Idq=0.5A, Pin=3W

Vds=12.5V,Idq=0.5A, Pin=3W

6.Typical Performance 6-1. Frequency vs.

ADJACENT CHANNEL POWER RATIO, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT,

INPUT POWER and INPUT RETURN LOSS

Ta=+25deg.C,

Ta=+25deg.C

- AN-UHF-127-

ηD

Pout(W) , Drain Effi(%)

370 380 390 400 410 420 430 440

Pout

f (MHz)

Pout

Idd

Gp(dB)

Pout(dBm)

370 380 390 400 410 420 430 440

I.R.L.

f (MHz)

Ta=+25deg. C., Vds=12.5V, Idq=0.7A, Pin=3W

Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.

Pin Pout

(MHz) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)

380 2.80

34.8 3.0 46.7 46.4

11.9 6.53 52.4 56.1 -6.7 390 2.80 34.8 3.0 46.8 47.4 11.9 6.46 54.1 57.8 -8.2 400 2.80 34.8 3.0 46.8 47.7 12.0 6.45 54.6 58.3 -10.1 410 2.80 34.8 3.0 46.7 47.0 11.9 6.30 55.0 58.8 -11.5 420 2.80 34.8 3.0 46.7 47.2 11.9 6.31 55.2 58.9 -12.1 430 2.80 34.8 3.0 46.7 46.4 11.8 6.18 55.4 59.3 -10.9

-10

-20

Input R. L. (dB) , Idd(A)

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

9/17

6-2. RF Power vs.

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

INPUT POWER

Ta=+25deg.C,Vds=12.5V, Idq=0.7A

405MHz

Pout , OUTPUT POWER(W)

10 20 30

Pin, INPUT POWER(dBm)

POWER GAIN and - /+ ADJACENT CHANNEL POWER

Ta=+25deg.C,Vds=12.5V,Idq=0.7A

430MHz

405MHz

380MHz

430MHz

Ta=+25deg.C,Vds=12.5V,Idq=0.7A

405MHz

Pout , OUTPUT POWER(dBm)

430MHz

380MHz

10 20 30

Pin, INPUT POWER(dBm)

Ta=+25deg.C,Vds=12.5V, Idq=0.7A

430MHz

405MHz

-10

-20

380MHz

405MHz

Gp, POWER GAIN(dB)

430MHz

-ACP

-30

-ACP(dBc)

-40

-50

380MHz

+ACP

405MHz

Gp, POWER GAIN(dB)

430MHz

380MHz

30 40 50

Pout, OUTPUT POWER(dBm)

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

-60

30 40 50

Pout, OUTPUT POWER(dBm)

380MHz

-10

-20

-30

-40

-50

-60

+ACP (dBc)

Application Note for Silicon RF Power Semiconductors

10/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

ηD, DRAIN EFFICIENCY(%)

Idd, DRAIN CURRENT(A)

Ta=+25deg.C,Vds=12.5V, Idq=0.7A

- AN-UHF-127-

DRAIN EFFICIENCY

Ta=+25deg.C,Vds=12.5V,Idq=0.7A

0 10 20 30 40 50

Ta=+25deg.C,Vds=12.5V, Idq=0.7A

430MHz

405MHz

380MHz

Pout, OUTPUT POWER(W)

DRAIN CURRENT

405MHz

430MHz

380MHz

30 40 50

Pout, OUTPUT POWER(dBm)

Ta=+25deg.C,Vds=12.5V,Idq=0.7A

0 10 20 30 40 50

380MHz 430MHz

Pout, OUTPUT POWER(W)

405MHz

30 40 50

Pout, OUTPUT POWER(dBm)

405MHz

380MHz

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

430MHz

Application Note for Silicon RF Power Semiconductors

11/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

INPUT RETURN LOSS

Ta=+25deg.C,Vds=12.5V,Idq=0.7A

-10

380MHz

405MHz

-20

430MHz

-30

I.R.L., INPUT RETURN LOSS (dB)

-40 0 10 20 30 40 50

Pout, OUTPUT POWER(W)

Ta=+25deg. C., Vds=12.5V, Idq=0.7A

380MHz

Vgg Gp ID(RF) ηadd ηD I.R.L. -ACP +ACP

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.80 15.6 0.04 30.1 1.0 14.2 1.06 7.5 7.7 -7.0 -48.7 -48.8

2.80 16.6 0.05 31.1 1.3 14.2 1.15 8.7 9.1 -7.1 -48.9 -49.0

2.80 17.6 0.06 32.1 1.6 14.3 1.25 10.1 10.5 -7.2 -48.6 -48.7

2.80 18.6 0.07 33.2 2.1 14.3 1.36 11.8 12.2 -7.2 -48.8 -49.1

2.80 19.6 0.09 34.2 2.6 14.3 1.50 13.5 14.0 -7.3 -49.7 -49.8

2.80 20.6 0.11 35.3 3.4 14.3 1.66 15.6 16.1 -7.4 -49.7 -50.1

2.80 21.6 0.14 36.3 4.2 14.4 1.85 17.7 18.3 -7.5 -50.5 -51.0

2.80 22.6 0.18 37.4 5.5 14.4 2.06 20.5 21.2 -7.5 -51.7 -51.7

2.80 23.6 0.23 38.4 6.9 14.4 2.31 23.2 24.0 -7.6 -52.4 -53.2

2.80 24.6 0.29 39.5 8.8 14.5 2.59 26.4 27.3 -7.7 -53.1 -54.8

2.80 25.6 0.36 40.5 11.2 14.5 2.91 29.7 30.7 -7.8 -51.5 -53.0

2.80 26.6 0.46 41.5 14.0 14.5 3.26 33.2 34.3 -7.9 -47.0 -47.5

2.80 27.6 0.58 42.4 17.4 14.5 3.66 36.6 37.9 -8.0 -42.6 -43.0

2.80 28.6 0.73 43.2 21.1 14.4 4.08 40.0 41.5 -8.1 -38.1 -38.4

2.80 29.6 0.91 44.0 25.1 14.2 4.50 43.1 44.7 -8.1 -34.7 -34.6

2.80 30.6 1.14 44.7 29.2 14.0 4.91 45.7 47.6 -8.0 -31.1 -31.2

2.80 31.6 1.43 45.2 33.2 13.6 5.31 47.8 50.0 -7.8 -28.5 -28.5

2.80 32.5 1.78 45.7 37.0 13.2 5.69 49.6 52.1 -7.5 -25.9 -25.9

2.80 33.4 2.21 46.1 40.9 12.7 6.03 51.3 54.2 -7.2 -24.8 -24.8

2.80 34.3 2.71 46.4 44.0 12.1 6.34 52.1 55.5 -6.9 -23.6 -23.3

2.80 35.2 3.33 46.7 47.0 11.5 6.61 52.8 56.9 -6.5 -22.6 -21.9

2.80 36.0 4.02 47.0 49.7 10.9 6.86 53.2 57.9 -6.2 -21.8 -21.2

2.80 36.8 4.76 47.2 52.1 10.4 7.06 53.6 59.0 -5.9 -20.5 -20.1

2.80 37.4 5.46 47.3 54.0 10.0 7.23 53.7 59.8 -5.7 -20.1 -19.5

2.80 37.8 6.09 47.4 55.5 9.6 7.36 53.7 60.3 -5.5 -19.6 -19.0

Pin Pout

Ta=+25deg.C,Vds=12.5V, Idq=0.7A

380MHz

-10

405MHz

-20

430MHz

-30

I.R.L., INPUT RETURN LOSS (dB)

-40 30 40 50

Pout, OUTPUT POWER(dBm)

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

12/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

405MHz

Vgg Gp ID(RF) ηadd ηD I.R.L. -ACP +ACP

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.80 15.4 0.03 30.7 1.2 15.0 1.09 8.3 8.6 -11.6 -50.1 -50.7

2.80 16.5 0.04 31.7 1.5 15.1 1.16 9.9 10.2 -11.8 -50.7 -51.2

2.80 17.5 0.06 32.7 1.8 15.1 1.26 11.3 11.7 -12.0 -50.5 -51.4

2.80 18.5 0.07 33.7 2.4 15.1 1.39 13.2 13.6 -12.0 -51.8 -52.2

2.80 19.5 0.09 34.7 3.0 15.1 1.53 15.1 15.5 -12.1 -52.0 -52.7

2.80 20.5 0.11 35.8 3.8 15.1 1.68 17.5 18.1 -12.2 -52.5 -53.3

2.80 21.5 0.14 36.8 4.8 15.1 1.86 20.0 20.6 -12.3 -53.4 -54.5

2.80 22.5 0.18 37.8 6.1 15.1 2.08 22.8 23.5 -12.4 -54.1 -55.5

2.80 23.5 0.22 38.9 7.7 15.2 2.31 26.0 26.8 -12.5 -52.9 -54.6

2.80 24.5 0.28 39.9 9.8 15.2 2.60 29.3 30.2 -12.7 -50.5 -51.7

2.80 25.5 0.35 40.9 12.3 15.1 2.91 32.9 33.8 -12.9 -46.8 -47.5

2.80 26.5 0.45 41.9 15.3 15.1 3.26 36.5 37.6 -13.2 -43.6 -43.4

2.80 27.5 0.56 42.7 18.8 15.0 3.64 40.1 41.3 -13.5 -40.6 -40.8

2.80 28.5 0.71 43.6 22.7 14.9 4.05 43.4 44.8 -13.9 -36.8 -37.5

2.80 29.5 0.90 44.3 26.8 14.7 4.46 46.5 48.1 -14.2 -33.8 -33.5

2.80 30.5 1.13 44.9 30.7 14.4 4.85 48.9 50.7 -14.2 -31.1 -31.0

2.80 31.5 1.42 45.4 34.6 14.1 5.24 50.6 52.8 -13.9 -28.5 -28.5

2.80 32.5 1.77 45.8 38.1 13.3 5.59 52.1 54.6 -13.2 -26.1 -26.4

2.80 33.4 2.21 46.2 41.7 12.8 5.91 53.4 56.4 -12.3 -24.8 -24.8

2.80 34.4 2.73 46.5 44.7 12.1 6.21 54.1 57.6 -11.3 -23.6 -23.6

2.80 35.2 3.35 46.8 47.5 11.5 6.48 54.5 58.7 -10.4 -22.6 -22.6

2.80 36.1 4.06 47.0 50.0 10.9 6.71 54.8 59.6 -9.5 -21.8 -21.8

2.80 36.8 4.76 47.2 52.3 10.4 6.91 55.0 60.5 -8.7 -21.2 -21.0

2.80 37.4 5.51 47.3 54.1 9.9 7.08 54.9 61.2 -8.0 -20.7 -20.5

2.80 37.9 6.16 47.4 55.6 9.6 7.20 54.9 61.7 -7.3 -20.0 -20.0

Pin Pout

430MHz

Vgg Gp ID(RF) ηadd ηD I.R.L. -ACP +ACP

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.80 15.9 0.04 30.7 1.2 14.8 1.09 8.4 8.7 -30.4 -49.9 -50.7

2.80 16.9 0.05 31.7 1.5 14.8 1.18 9.8 10.2 -30.6 -50.0 -50.3

2.80 17.9 0.06 32.7 1.9 14.8 1.28 11.3 11.7 -31.2 -50.8 -50.8

2.80 18.9 0.08 33.7 2.4 14.8 1.39 13.2 13.6 -31.9 -50.6 -51.2

2.80 19.9 0.10 34.7 3.0 14.8 1.53 15.1 15.6 -33.5 -51.1 -51.1

2.80 20.9 0.12 35.8 3.8 14.9 1.68 17.4 18.0 -33.9 -51.3 -51.9

2.80 21.9 0.15 36.8 4.8 14.9 1.86 19.8 20.5 -35.0 -51.7 -52.2

2.80 22.9 0.19 37.8 6.0 14.9 2.06 22.6 23.3 -35.9 -52.8 -53.7

2.80 23.9 0.24 38.8 7.6 14.9 2.30 25.6 26.4 -37.3 -53.6 -54.8

2.80 24.9 0.31 39.8 9.6 14.9 2.58 28.8 29.8 -37.9 -53.6 -55.7

2.80 25.9 0.39 40.8 12.0 14.9 2.89 32.3 33.3 -37.6 -52.7 -53.9

2.80 26.9 0.49 41.7 15.0 14.8 3.23 35.9 37.1 -35.0 -47.6 -48.6

2.80 27.9 0.62 42.6 18.4 14.7 3.60 39.5 40.9 -32.9 -43.1 -43.6

2.80 28.9 0.78 43.5 22.2 14.5 4.00 42.9 44.5 -30.5 -38.4 -39.1

2.80 30.0 1.00 44.2 26.5 14.2 4.41 46.2 48.0 -27.7 -35.5 -35.5

2.80 31.0 1.26 44.9 30.8 13.9 4.83 48.9 51.0 -24.8 -32.6 -32.4

2.80 32.0 1.60 45.5 35.2 13.4 5.21 51.5 54.0 -21.5 -28.5 -28.5

2.80 33.1 2.02 45.9 39.3 12.9 5.59 53.4 56.3 -18.5 -25.9 -25.9

2.80 34.1 2.54 46.4 43.2 12.3 5.93 54.9 58.3 -15.8 -24.8 -24.5

2.80 35.1 3.20 46.7 46.8 11.6 6.24 55.9 60.0 -13.6 -23.6 -23.2

2.80 36.0 4.00 47.0 50.0 11.0 6.51 56.5 61.4 -11.8 -22.3 -22.1

2.80 36.9 4.93 47.3 53.1 10.3 6.76 57.0 62.8 -10.4 -21.6 -21.5

2.80 37.7 5.91 47.5 55.6 9.7 6.98 57.0 63.8 -8.9 -20.8 -20.5

2.80 38.4 6.88 47.6 57.7 9.2 7.14 57.0 64.7 -8.0 -20.2 -20.0

2.80 38.9 7.80 47.7 59.4 8.8 7.28 56.7 65.3 -7.1 -20.0 -19.7

Pin Pout

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

13/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

6-3. Drain Quiescent Current vs.

OUTPUT POWER and DRAIN EFFICIENCY

Ta=+25deg.C,Vds=12.5V, Pin=3.0W

- AN-UHF-127-

Ta=+25deg.C,Vds=12.5V,Pin=3.0W

405MHz

380MHz

Pout, OUTPUT POWER(W)

200 400 600 800 1000 1200 1400

430MHz

IDQ, BIASING CURRENT(mA)

Ta=+25deg. C., Vds=12.5V, Pin=3W

380MHz

Vgg Idq

Pin Pout

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.48 263 34.8 3.0 46.5 44.7 6.25 56.2 52.4 11.7 -6.59

2.50 325 34.8 3.0 46.5 44.9 6.29 56.0 52.2 11.7 -6.61

2.53 388 34.8 3.0 46.5 45.1 6.31 56.0 52.3 11.8 -6.63

2.55 463 34.8 3.0 46.6 45.4 6.35 56.1 52.4 11.8 -6.62

2.58 538 34.8 3.0 46.6 45.6 6.40 55.9 52.2 11.8 -6.66

2.60 625 34.8 3.0 46.6 45.9 6.43 56.1 52.5 11.9 -6.68

2.63 713 34.8 3.0 46.6 46.2 6.46 56.1 52.5 11.9 -6.69

2.65 800 34.8 3.0 46.7 46.4 6.50 56.1 52.4 11.9 -6.69

2.68 913 34.8 3.0 46.7 46.9 6.58 56.0 52.3 11.9 -6.70

2.70 1025 34.8 3.0 46.7 47.1 6.59 56.1 52.5 11.9 -6.73

2.73 1150 34.8 3.0 46.7 47.2 6.64 55.8 52.3 12.0 -6.74

2.75 1275 34.8 3.0 46.7 47.3 6.66 55.7 52.2 12.0 -6.77

430MHz

η, DRAIN EFFICIENCY (%)

200 400 600 800 1000 1200 1400

380MHz

IDQ, BIASING CURRENT(mA)

405MHz

Idd ηD ηadd Gain I.R.L.

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

14/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

405MHz

430MHz

Vgg Idq

Pin Pout

Idd ηD ηadd Gain I.R.L.

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.47 263 34.8 3.0 46.6 45.2 6.11 58.1 54.2 11.7 -10.47

2.50 325 34.8 3.0 46.6 45.4 6.16 57.8 54.0 11.8 -10.49

2.53 388 34.8 3.0 46.6 45.5 6.19 57.7 53.8 11.8 -10.57

2.55 463 34.8 3.0 46.6 45.8 6.21 57.9 54.1 11.8 -10.56

2.58 538 34.8 3.0 46.6 45.9 6.26 57.5 53.8 11.8 -10.60

2.60 625 34.8 3.0 46.6 46.1 6.29 57.5 53.8 11.8 -10.65

2.63 713 34.8 3.0 46.7 46.4 6.35 57.4 53.7 11.9 -10.63

2.65 800 34.8 3.0 46.7 46.6 6.35 57.6 53.8 11.9 -10.71

2.68 913 34.8 3.0 46.7 46.8 6.41 57.3 53.6 11.9 -10.76

2.70 1025 34.8 3.0 46.7 47.3 6.45 57.6 53.9 11.9 -10.78

2.73 1138 34.8 3.0 46.8 47.4 6.51 57.1 53.4 12.0 -10.75

2.75 1275 34.8 3.0 46.8 47.5 6.53 57.2 53.5 12.0 -10.88

Vgg Idq

Pin Pout

Idd ηD ηadd Gain I.R.L.

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.47 263 34.8 3.0 46.5 44.7 5.93 59.2 55.2 11.7 -10.77

2.50 325 34.8 3.0 46.5 45.0 5.98 59.1 55.1 11.7 -10.78

2.53 400 34.8 3.0 46.5 45.1 6.03 58.7 54.8 11.7 -10.80

2.55 463 34.8 3.1 46.6 45.4 6.05 58.8 54.9 11.7 -10.86

2.58 538 34.8 3.0 46.6 45.5 6.09 58.6 54.8 11.8 -10.94

2.60 613 34.8 3.0 46.6 46.0 6.13 58.9 55.0 11.8 -10.87

2.63 713 34.8 3.0 46.7 46.3 6.15 59.1 55.2 11.8 -10.93

2.65 800 34.8 3.0 46.7 46.5 6.19 58.9 55.1 11.9 -11.04

2.68 913 34.8 3.0 46.7 46.8 6.24 58.8 55.0 11.9 -11.05

2.70 1025 34.8 3.0 46.7 47.1 6.26 59.1 55.3 11.9 -11.04

2.73 1138 34.8 3.0 46.7 47.2 6.31 58.7 55.0 11.9 -11.07

2.75 1275 34.8 3.0 46.8 47.4 6.38 58.4 54.6 11.9 -11.08

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

15/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

6-4. DC Power Supply vs.

Ta=+25deg.C, Idq=0.7A, Pin=3.0W

- AN-UHF-127-

OUTPUT POWER and DRAIN EFFICIENCY

Ta=+25deg.C, Idq=0.7A, Pin=3.0W

Pout , OUTPUT POWER(W)

10 11 12 13 14 15

430MHz

VDD, SUPPLY VOLTAGE(V)

405MHz

380MHz

DRAIN CURRENT

Ta=+25deg.C, Idq=0.7A,Pin=3.0W

8.0

7.5

η, DRAIN EFFICIENCY(%)

10 11 12 13 14 15

380MHz

VDD, SUPPLY VOLTAGE(V)

430MHz

405MHz

7.0

6.5

6.0

5.5

5.0

IDD, DRAIN CURRENT(A)

4.5

4.0 10 11 12 13 14 15

VDD, SUPPLY VOLTAGE(V)

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

380MHz

430MHz

405MHz

Application Note for Silicon RF Power Semiconductors

16/17

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

Ta=+25deg. C., Pin=3W

380MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

Pin Pout

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 11.0 613 34.8 3.0 45.9 38.9 6.11 58.5 54.0 11.1 -6.2

2.62 11.5 650 34.8 3.0 46.2 41.4 6.28 58.0 53.7 11.4 -6.3

2.62 12.0 663 34.8 3.0 46.4 43.7 6.44 57.1 53.2 11.6 -6.4

2.62 12.5 688 34.8 3.0 46.7 46.2 6.55 57.0 53.3 11.9 -6.6

2.62 13.0 700 34.8 3.0 46.8 48.3 6.70 56.0 52.5 12.1 -6.7

2.62 13.5 725 34.8 3.0 47.1 50.9 6.81 55.9 52.6 12.3 -6.9

2.62 14.0 738 34.8 3.0 47.3 53.3 6.95 55.2 52.1 12.5 -7.0

2.62 14.5 750 34.8 3.0 47.4 55.3 7.06 54.4 51.5 12.6 -7.1

405MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

Pin Pout

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 11.0 638 34.8 3.0 45.9 39.1 5.99 60.0 55.3 11.1 -9.5

2.62 11.5 663 34.8 3.0 46.2 41.7 6.14 59.6 55.3 11.4 -9.8

2.62 12.0 675 34.8 3.0 46.5 44.2 6.29 59.1 55.1 11.6 -10.1

2.62 12.5 688 34.8 3.0 46.7 46.8 6.44 58.7 54.9 11.9 -10.4

2.62 13.0 700 34.8 3.0 46.9 49.2 6.56 58.1 54.6 12.1 -10.8

2.62 13.5 725 34.8 3.0 47.1 51.6 6.70 57.6 54.2 12.3 -11.1

2.62 14.0 738 34.8 3.0 47.3 54.0 6.81 57.1 53.9 12.5 -11.4

2.62 14.5 750 34.8 3.0 47.5 56.5 6.93 56.7 53.7 12.7 -11.6

430MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

Pin Pout

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 11.0 613 34.8 3.0 45.9 39.1 5.80 61.8 57.0 11.1 -9.4

2.62 11.5 638 34.8 3.0 46.2 41.8 5.98 61.3 56.8 11.4 -9.8

2.62 12.0 663 34.8 3.0 46.5 44.4 6.13 60.9 56.8 11.6 -10.3

2.62 12.5 675 34.8 3.0 46.7 46.7 6.25 60.4 56.4 11.9 -10.7

2.62 13.0 688 34.8 3.0 46.9 49.1 6.40 59.5 55.8 12.1 -11.1

2.62 13.5 713 34.8 3.0 47.1 51.3 6.53 58.8 55.3 12.3 -11.5

2.62 14.0 725 34.8 3.0 47.3 53.3 6.64 57.9 54.6 12.5 -11.9

2.62 14.5 738 34.8 3.0 47.5 55.7 6.74 57.5 54.3 12.7 -12.3

Note: Unless otherwise specified, input signal is setting modulation with the following condition.

Modulation; π/4DPQSK, 18kbps, α=0.35, Channel-Band-Width=18KHz, Channel-Spacing=25KHz

Application Note for Silicon RF Power Semiconductors

17/17

MITSUBISHI AN-UHF-127 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual