MITSUBISHI AN-UHF-127 User Manual

APPLICATION NOTE

SUBJECT: RD35HUF2 single-stage amplifier with f=380-430MHz evaluation board

Features:

- The evaluation board for RD35HUF2

- Frequency: 380-430MHz

- Typical input power: 3W

- Typical output power: 46W

- Typical adjacent channel power ratio*: -42.5dBc @ output power=17.7W (42.5dBm)

Silicon RF Power Semiconductors

Document NO. AN-UHF-127
Date : 31stMay. 2011
Prepared : E.Akiyama

Y.Koashi

K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by

MIYOSHI Electronics)

*: Modulation: π/4 DQPSK, 18kbps, α=0.35, Channel-Band-Width=18 kHz, Channel-Spacing=25 kHz

- Quiescent current: 700mA

- Operating current: 6.4A @output power=46W

- 3.5A @ output power=17.7W (42.5dBm)

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

RF IN RF OUT

PCB L=75mm W=46mm

Application Note for Silicon RF Power Semiconductors

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Contents

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

Page

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Standard Land Pattern Dimensions --------------------------------------

4. Component List and Standard Deliverable --------------------------------------

5. Thermal Design of Heat Sink ------------------------------------------------

6. Typical RF Characteristics ---------------------------------------------------­6-1. Frequency vs. -----------------------------------------------------------­6-2. RF Power vs. ------------------------------------------------------------­6-3. Drain Quiescent Current vs. ---------------------------------------­6-4. DC Power Supply vs. -------------------------------------------------

3
4
6
7
8
9

9
10
14
16

Application Note for Silicon RF Power Semiconductors

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RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

1. Equivalent Circuitry

- AN-UHF-127-

Application Note for Silicon RF Power Semiconductors

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2. PCB Layout

100 0

9 p

TOP VIEW (Layer 1)

RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

- AN-UHF-127-

BOARD OUTLINE: 75.0*46.0(mm)

800 4C

0ohm

330 p

Cu

6p

27p

100 0p

100 0p

Cu

2..2 K

9p

BOTTOM VIEW (Layer 4), Perspective through Top View

100 0p

1.2p

800 2C

Cu

5 p

330 p

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RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 2) , Perspective Through Top View

- AN-UHF-127-

Internal Layer (Layer 3) , Perspective Through Top View

Substrate Condition

Nomial TotalCompletedThickness (included resist coating): 1.6mm

Layer1 ( CopperT: 43um withGold Plating)

200um

Prepreg

Layer2 (Copper T:35um)

930um

200um

Core

Prepreg

Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz

Layer3 (Copper T:35um)

Layer4 ( CopperT: 43um withGold Plating)

Material: MCL-E-679G(R), Hitachi Chemical Co.

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RD35HUF2 single-stage amplifier with f=380-to-430MHz evaluation board

3. Standard Land Pattern Dimensions

.

a

i

D

=

- AN-UHF-127-

6.52.8 13.54.9 3.5

9

.

4

8.3

3.3

3.8

3.2

18.0

19.7

23.4 25.4

UNIT: mm

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