MITSUBISHI AN-UHF-122 User Manual
APPLICATION NOTE
SUBJECT: RD04HMS2 & RD70HUF2 two-stage amplifier at f=380-470MHz.(Vdd=12.5V)
Features:
- The evaluation board for RD04HMS2 & RD70HUF2 two-stage amplifier
- Frequency: 380-470MHz
- Vdd: 12.5V
- Input power: 0.2W
- Output power: 79-88W
Silicon RF Power Semiconductors
Document NO. AN-UHF-122
Date : 28thFeb. 2011
Prepared : Y.Takase
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Quiescent Current: RD04HMS2 ; 0.1A, RD70HUF2 ; 1A
- Operating Current: 12-13A
- Surface-mounted RF power amplifier structure
DrainBias
(RD04HMS2)
RF IN
Gate Bias
(RD04HMS2)
Gate Bias
(RD70HUF2)
GND
Drain Bias
(RD70HUF2)
RF OUT
Gate Bias
(RD70HUF2)
PCB L=82.5mm W=60.0mm
Application Note for Silicon RF Power Semiconductors
1/17
Contents
RD04HMS2 & RD70HUF2 two-stage amplifier at 380-470MHz. (Vdd=12.5V)
- AN-UHF-122 -
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. Component List and Standard Deliverable -------------------------------------
3. PCB Layout -----------------------------------------------------------------------
4. Standard Land Pattern Dimensions -----------------------------------------
5. Typical RF Characteristics ---------------------------------------------------5-1. Frequency characteristics ------------------------------------------
5-2. Pout vs. Pin characteristics --------------------------------------------
5-3. Pout vs. Vdd characteristics ----------------------------------------5-4. Pout vs. Vgg characteristics --------------------------------------------------
3
4
6
9
10
10
12
14
16
Application Note for Silicon RF Power Semiconductors
2/17
RD04HMS2 & RD70HUF2 two-stage amplifier at 380-470MHz. (Vdd=12.5V)
1. Equivalent Circuitry
RF OUT
ML2ML2
W=2.0W=2.0
C46
C47
C48
L5
Via
7Via holes
C34
C32
ML2
C30
ML1
C28
ML1
C26
ML1
Electrode1
Source
RD70HUF2
Electrode3
Source
C24
C22
ML1
W=4.4W=5.0
ML1
C38
C37C36
50ohm
Characteristic impidance
Via
Via
ML2
W=1.9
W=1.3
W=1.8
W=3.6
CenterSource
W=4.6
Via
Via
Via
Via
W=1.3
W=1.8
W=3.6
Electrode
W=4.6
C35
C33
ML2
C31
ML1
C29
ML1
C27
ML1
ML1
W=4.4W=5.0
C25
ML1
C23
er=4.7,TanD=0.018@1GHz
Via HoleDimensions, Diameter=0.8mmLength=1.6mm
Micro StripLine SubstrateThickness:ML1,T=0.2mm,ML2,T=1.1mm
Board material:GlassEpoxy Substrate--
Electrode2
Source
Electrode4
Source
- AN-UHF-122 -
UNIT:W [mm]
R3
C18
R6
C41
Via
1Via hole
Drain Bias
GateBias1
GateBias2
C19
C16
R2
C8
W=1.0
ML1
Via
Via
Via
4Via holes
C14
C12
C10
L4
C43 C44 C45
ML1
W=4.7
W=2.0W=2.0
R1
ML2 ML2
L3
R5
ML2
L2
C39 C40
ML2
W=2.0
L1
W=2.0W=2.0
C1
R4
C20
C17
C9
Via
C5
W=2.0
C21
R7
W=1.0
ML1
C15
C13
C11
C6 C7
C4
C3
C2
C42
Via
1Via hole
ML2 ML2
RF IN
50ohm
Characteristic impidance
Application Note for Silicon RF Power Semiconductors
3/17
RD04HMS2 & RD70HUF2 two-stage amplifier at 380-470MHz. (Vdd=12.5V)
No.
Description
P/N
Qty
Manufacturer
Tr1MOSFET
RD04HMS2
1
Mitsubishi Electric Corporation
Tr2MOSFET
RD70HUF2
1
Mitsubishi Electric Corporation
No.
Description
P/N
Qty
Manufacturer
Capacitance
Size
Remarks
C1100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C26.2
pF
1608
Hi-Q
100
V
GQM1882C2A6R2CB01D
1
MURATA MANUFACTURING CO.
C322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C436
pF
1608
Hi-Q50V
GQM1882C1H360JB01D
1
MURATA MANUFACTURING CO.
C524
pF
1608
Hi-Q50V
GQM1882C1H240JB01D
1
MURATA MANUFACTURING CO.
C627
pF
1608
Hi-Q50V
GQM1882C1H270JB01D
1
MURATA MANUFACTURING CO.
C727
pF
1608
Hi-Q50V
GQM1882C1H270JB01D
1
MURATA MANUFACTURING CO.
C8100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C9100
pF
160850V
GRM1882C1H101JA01D
1
MURATA MANUFACTURING CO.
C1022
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1122
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1222
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1322
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1422
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C1522
pF
1608
Hi-Q50V
GQM1882C1H220JB01D
1
MURATA MANUFACTURING CO.
C16910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C17910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C1862
pF
2012
Hi-Q
250
V
GQM2195C2E620JB12D
1
MURATA MANUFACTURING CO.
C1962
pF
2012
Hi-Q
250
V
GQM2195C2E620JB12D
1
MURATA MANUFACTURING CO.
C2062
pF
2012
Hi-Q
250
V
GQM2195C2E620JB12D
1
MURATA MANUFACTURING CO.
C2162
pF
2012
Hi-Q
250
V
GQM2195C2E620JB12D
1
MURATA MANUFACTURING CO.
C228.2
pF
1608
Hi-Q50V
GQM1882C1H8R2CB01D
1
MURATA MANUFACTURING CO.
C238.2
pF
1608
Hi-Q50V
GQM1882C1H8R2CB01D
1
MURATA MANUFACTURING CO.
C249.1
pF
1608
Hi-Q50V
GQM1882C1H9R1CB01D
1
MURATA MANUFACTURING CO.
C259.1
pF
1608
Hi-Q50V
GQM1882C1H9R1CB01D
1
MURATA MANUFACTURING CO.
C2643
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2743
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2843
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C2943
pF
2012
Hi-Q
250
V
GQM2195C2E430JB12D
1
MURATA MANUFACTURING CO.
C3012
pF
2012
Hi-Q
250
V
GQM2195C2E120JB12D
1
MURATA MANUFACTURING CO.
C3112
pF
2012
Hi-Q
250
V
GQM2195C2E120JB12D
1
MURATA MANUFACTURING CO.
C3224
pF
2012
Hi-Q
250
V
GQM2195C2E240JB12D
1
MURATA MANUFACTURING CO.
C3324
pF
2012
Hi-Q
250
V
GQM2195C2E240JB12D
1
MURATA MANUFACTURING CO.
C347.5
pF
2012
Hi-Q
250
V
GQM2195C2E7R5CB12D
1
MURATA MANUFACTURING CO.
C357.5
pF
2012
Hi-Q
250
V
GQM2195C2E7R5CB12D
1
MURATA MANUFACTURING CO.
C362.7
pF
2012
Hi-Q
250
V
GQM2195C2E2R7CB12D
1
MURATA MANUFACTURING CO.
C372.7
pF
2012
Hi-Q
250
V
GQM2195C2E2R7CB12D
1
MURATA MANUFACTURING CO.
C38330
pF
3216
200
V
GRM31M2C2D331JY21B
1
MURATA MANUFACTURING CO.
C3910000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C401000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C411000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C421000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C4322
μF
-50V
H1002
1
NICHICON Corporation
C4410000
pF
160850V
GRM188B11H103KA01
1
MURATA MANUFACTURING CO.
C451000
pF
160850V
GRM1882C1H102JA01
1
MURATA MANUFACTURING CO.
C46220
μF
-35V
EEUFC1V221
1
Panasonic Corporation
C47910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
C48910
pF
201250V
GRM2162C1H911JA01D
1
MURATA MANUFACTURING CO.
2. Component List and Standard Deliverable
- Component List
- AN-UHF-122 -
Application Note for Silicon RF Power Semiconductors
4/17
RD04HMS2 & RD70HUF2 two-stage amplifier at 380-470MHz. (Vdd=12.5V)
* Inductor of Rolling Coil measurement condition : f=100MHz
No.
Description
P/N
Qty
Manufacturer
Remarks
Inductance
Diameter
WireΦInside
Φ
T/N of coils
L112
nH *
0.23mm1.1mm3
2303A
1
YC Corporation Co.,Ltd.
Enameled wire
L28
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L38
nH *
0.23mm1.1mm2
2302S
1
YC Corporation Co.,Ltd.
Enameled wire
L437
nH *
0.40mm1.6mm7
4007C
1
YC Corporation Co.,Ltd.
Enameled wire
L525
nH *
0.80mm2.2mm5
8005C
1
YC Corporation Co.,Ltd.
Enameled wire
No.
Description
P/N
Qty
Manufacturer
Resistance
Size
R
147ohm
1608
RPC05N470J
1
TAIYOSHA ELECTRIC CO.
R22.2
ohm
2012
RPC10T2R2J
1
TAIYOSHA ELECTRIC CO.
R3100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R4100
ohm
2012
RPC10T101J
1
TAIYOSHA ELECTRIC CO.
R
5
3900
ohm
1608
RPC05T392J
1
TAIYOSHA ELECTRIC CO.
R
6
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
R
7
2700
ohm
1608
RPC05T272J
1
TAIYOSHA ELECTRIC CO.
No.
Description
P/N
Qty
Manufacturer
Pb
PCB
MS3A0208
1
Homebuilt
OPTION
Rc
SMA
female connector
PAF-S00-002
2
GIGALANE Corporation
Bc1Bias connector
red color
TM-605R
2
MSK Corporation
Bc2Bias connector
black color
TM-605B
2
MSK Corporation
Pe
Aluminum pedestal
-1Homebuilt
Pd
Thermal Silicon Compound
G746
-
Shin-Etsu Chemical Co.,Ltd
Cu1Copper plate 2.8 x 1.8 x 0.4t (mm)
-1Homebuilt
Conducting wire
-6Homebuilt
Screw
M3-2-Screw
M2.6-10-Screw
M2-10
-
Evaluation Board assembled with all the component
PCB (raw board)
- AN-UHF-122 -
- Standard Deliverable
TYPE1
TYPE2
Application Note for Silicon RF Power Semiconductors
5/17
3. PCB Layout
TOP VIEW (Layer 1)
RD04HMS2 & RD70HUF2 two-stage amplifier at 380-470MHz. (Vdd=12.5V)
- AN-UHF-122 -
BOARD OUTLINE: 82.5*60.0(mm)
BOTTOM VIEW (Layer 6), Perspective through Top View
Application Note for Silicon RF Power Semiconductors
6/17
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