Page 1
APPLICATION NOTE
SUBJECT: RD70HUF2 single-stage amplifier with f=450-530MHz evaluation board
Features:
- The evaluation board for RD70HUF2
- Frequency: 450-530MHz
- Typical input power: 5.5W
- Typical output power: 75W
- Quiescent current: Total is 1000mA, 500mA per one FET chip
Silicon RF Power Semiconductors
Document NO. AN-UHF-113
Date : 27thMay 2011
Prepared : Y.Koashi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 10A
- Surface-mounted RF power amplifier structure
Gate Bias 1
(Vgg1)
RF IN RF OUT
Gate Bias 2
(Vgg2)
Drain Bias
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
1/16
Page 2
Contents
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable -------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
2/16
Page 3
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
W=1.0
L=18.8
W=0.8
L=34.0
W=2.0
L=13.0
W=3.6
L=2.9
W=1.8
L=4.5
Source
Electrode1
W=4.6
L=5.0
W=3.6
L=2.9
W=1.8
L=4.5
W=1.3
L=36
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
Via Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
Characteristic impidance
50ohm
W=1.3
L=36
Source
Electrode3
Source
Electrode4
W=5.0
L=3.7
1. Equivalent Circuitry
- AN-UHF-113-
RFOUT
Drain Bias
C36
W=2.0
L=11.0
ML2, T=1.1
C33
C34 C35
ML2 ML2
W=2.0
L=14.0
L1
50ohm
Characteristic impidance
C32
Via1
Via1
Via1
Via1
7Via Holes
Via1
Via1
Via1
C30
C28
C26
ML2
ML2
C24
ML1
C22
C20
ML1 ML1
Center Source
ML1
W=4.6
L=5.0
Electrode
ML1
ML1
C29
C27 C31
C25
C23
C21
Electrode2
Source
RD70HUF2
ML1
W=4.4
L=4.6
C16
ML1
R2
C12
C13
W=5.0
L=3.7
Via1
1Via Hole
C8
R4
C6
C10
R1
C4
ML1
Via1
Via1
4Via Holes
Via1
ML1
ML1
W=4.4
L=4.6
C17
ML1
R3
C15
C11
C5
Via1
ML1
W=1.0
L=18.8
C3
C14
Via1
1Via Hole
C7
C9
R5
C18
C2
ML2
C19
C1
ML2
W=2.0
L=16.0
Gate Bias1
RF IN
Application Note for Silicon RF Power Semiconductors
Gate Bias2
3/16
Page 4
2. PCB Layout
300p
2.2K
300p
4
ｐ
TOP VIEW (Layer 1)
6ｐ
Cu
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
BOARD OUTLINE: 75.0*46.0(mm)
1000p
9p
Cu
2.2K
1000p
BOTTOM VIEW (Layer 4), Perspective through Top View
22p
27p
100p
100p
27p
22p
2.2ohm
1000p 1000p
100p
100ohm
100p
100p
100ohm
100p
12p12p
39p
33p
39p
3.6p
1000p
8005C
1000p
Cu
1p
22p
6.8p
36p
36p
6.8p
22p
3.6p
1p
Application Note for Silicon RF Power Semiconductors
4/16
Page 5
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-UHF-113-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial Total CompletedThickness (includedresist coating): 1.6mm
Layer1 ( CopperT: 43um with GoldPlating)
200um
Prepreg
Layer2 (Copper T:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (Copper T:35um)
Layer4 ( CopperT: 43um with GoldPlating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
5/16
Page 6
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
3. Standard Land Pattern Dimensions
=
.
a
i
D
8.3
- AN-UHF-113-
6.52.8 13.54.9 3.5
9
.
4
3.3
3.8
3.2
1.2
18.0
19.7
23.4 25.4
4.1
UNIT: mm
Application Note for Silicon RF Power Semiconductors
6/16
Page 7
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
Diameter: Wire=0.8mm Inside=2.2mm
T/N of coils=5
1
YC CORPORATION Co.,Ltd.
- AN-UHF-113-
4. Component List
- Component List
No. Description P/N Qty Manufacturer
Tr MOSFET RD70HUF2 1 Mitsubishi Electric Corporation
C 1 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO.
C 2 6 pF 1608 Hi-Q 100V GQM1882C2A6R0DB01 1 MURATA MANUFACTURING CO.
C 3 4 pF 1608 Hi-Q 100V GQM1882C2A4R0CB01 1 MURATA MANUFACTURING CO.
C 4 100 pF 1608 Hi-Q 50V GQM1882C1H101JB01 1 MURATA MANUFACTURING CO.
C 5 100 pF 1608 Hi-Q 50V GQM1882C1H101JB01 1 MURATA MANUFACTURING CO.
C 6 22 pF 1608 Hi-Q 50V GQM1882C1H220JB01 1 MURATA MANUFACTURING CO.
C 7 22 pF 1608 Hi-Q 50V GQM1882C1H220JB01 1 MURATA MANUFACTURING CO.
C 8 27 pF 1608 Hi-Q 50V GQM1882C1H270JB01 1 MURATA MANUFACTURING CO.
C 9 27 pF 1608 Hi-Q 50V GQM1882C1H270JB01 1 MURATA MANUFACTURING CO.
C 10 1000 pF 1608 50V GRM1882C1H102JA01 1 MURATA MANUFACTURING CO.
C 11 1000 pF 1608 50V GRM1882C1H102JA01 1 MURATA MANUFACTURING CO.
C 12 100 pF 2012 Hi-Q 50V GQM2192C1H101JB01 1 MURATA MANUFACTURING CO.
C 13 100 pF 2012 Hi-Q 50V GQM2192C1H101JB01 1 MURATA MANUFACTURING CO.
C 14 100 pF 2012 Hi-Q 50V GQM2192C1H101JB01 1 MURATA MANUFACTURING CO.
C 15 100 pF 2012 Hi-Q 50V GQM2192C1H101JB01 1 MURATA MANUFACTURING CO.
C 16 12 pF 1608 Hi-Q 50V GQM1882C1H120JB01 1 MURATA MANUFACTURING CO.
C 17 12 pF 1608 Hi-Q 50V GQM1882C1H120JB01 1 MURATA MANUFACTURING CO.
C 18 1000 pF 1608 Hi-Q 50V GRM1882C1H102JA01 1 MURATA MANUFACTURING CO.
C 19 1000 pF 1608 Hi-Q 50V GRM1882C1H102JA01 1 MURATA MANUFACTURING CO.
C 20 39 pF 2012 Hi-Q 50V GQM2192C1H390JB01 1 MURATA MANUFACTURING CO.
C 21 39 pF 2012 Hi-Q 50V GQM2192C1H390JB01 1 MURATA MANUFACTURING CO.
C 22 36 pF 2012 Hi-Q 50V GQM2192C1H360JB01 1 MURATA MANUFACTURING CO.
C 23 36 pF 2012 Hi-Q 50V GQM2192C1H360JB01 1 MURATA MANUFACTURING CO.
C 24 10 pF 2012 Hi-Q 100V GQM2192C2A100JB01 1 MURATA MANUFACTURING CO.
C 25 10 pF 2012 Hi-Q 100V GQM2192C2A100JB01 1 MURATA MANUFACTURING CO.
C 26 24 pF 2012 Hi-Q 50V GQM2192C1H240JB01 1 MURATA MANUFACTURING CO.
C 27 24 pF 2012 Hi-Q 50V GQM2192C1H240JB01 1 MURATA MANUFACTURING CO.
C 28 3.6 pF 2012 Hi-Q 100V GQM2193C2A3R6CB01 1 MURATA MANUFACTURING CO.
C 29 3.6 pF 2012 Hi-Q GQM2193C2A3R6CB01 1 MURATA MANUFACTURING CO.
C 30 1 pF 2012 Hi-Q GQM2194C2A1R0CB01 1 MURATA MANUFACTURING CO.
C 31 1 pF 2012 Hi-Q GQM2194C2A1R0CB01 1 MURATA MANUFACTURING CO.
C 32 9 pF 2012 Hi-Q GQM2192C2A9R0DB01 1 MURATA MANUFACTURING CO.
C 33 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO.
C 34 1000 pF 2012 100V GRM2162C2A102JA01 1 MURATA MANUFACTURING CO.
C 35 1000 pF 2012 100V GRM2162C2A102JA01 1 MURATA MANUFACTURING CO.
C 36 220 uF 35V EEUFC1V221 1 Panasonic Corporation
L 1 25 nH *
R 1 2.2 ohm 2012 RPC10T2R2J 1 TAIYOSHA ELECTRIC CO.
R 2 100 ohm 2012 RPC10T101J 1 TAIYOSHA ELECTRIC CO.
R 3 100 ohm 2012 RPC10T101J 1 TAIYOSHA ELECTRIC CO.
R 4 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.
R 5 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.
Pb PCB MS3A0200 1 Homebuilt
Rc SMA female connector PAF-S00-002 2 GIGALANE Corporation
Bc 1 Bias connector red color TM-605R 3 MSK Corporation
Bc 2 Bias connector black color TM-605B 1 MSK Corporation
Pe Aluminum pedestal 1 Homebuilt
Pd Thermal Silicon Compound G746 - Shin-Etsu Chemical Co.,Ltd
Sbc Support of bias connectors 2 Homebuilt
Conductiong wire 4 Homebuilt
Screw M3 10 Screw M2.6 4 Screw M2 4 * Inductor of Rolling Coil measurement condition : f=100MHz
Application Note for Silicon RF Power Semiconductors
7/16
Page 8
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- Standard Deliverable
TYPE1 Evaluation Board assembled with all the component including the option
TYPE2 PCB (raw board)
5. Thermal Design of Heat Sink
- AN-UHF-113-
M3 Screw
M3 Screw
Pb
Tr
Junction point of MOSFET chip
Pd
R
Pe
th(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom)
Thermally connect
Heat Sink
Tch
Also, operating Tj(“Tj
Therefore T
T
Pe bottom-air
*: an instance assuming high temperature of standard ambient conditions is 60 deg. C.
=(Pout/Efficiency-Pout+Pin) x R
(delta)
”)=140 (deg. C.), in case of RD series that Tch
(op)
Pe bottom-air
=“Tj
(op)
as delta temperature between Pe bottom and ambient 60 deg. C.* is
” - Tch
(delta)
- Ta
(60deg.C.)
th(ch-Pe bottom)
=(65W/55%-65W+5.5W) x 0.48=28.2 (deg. C.)
=140-28.2-60=51.8 (deg. C.)
(max)
(in this package)
=0.48 (deg. C./W)
=175 (deg. C.)
In terms of long-term reliability, “Tj
” has to be kept less than 140 deg. C. i.e. T
(op)
Pe bottom-air
has
to be less than 51.8 deg. C..
The thermal resistance of the heat sink to border it:
Rth
(Pe bottom-air)=TPe bottom-air
/(Pout/Efficiency-Pout+Pin)=51.8/(65W/55%-65W+5.5)=0.88 (deg. C./W)
Therefore
it is preferable that the thermal resistance of the heat sink is much smaller than 0.88 deg. C./W.
For assembly method including relevant precaution, refer to AN-GEN-070
Application Note for Silicon RF Power Semiconductors
8/16
Page 9
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
6. Typical RF Characteristics
6-1. Frequency vs.
OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS
Ta=+25deg.C
Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=5.5W
100
90
80
Pout
20
18
16
Ta=+25deg.C
Vds=12.5V, Idq=Total 1A/One-side 0.5A, Pin=5.5W
50
Pout
40
Idd
20
10
70
60
Pout(W) , Drain Effi(%)
50
40
450 460 470 480 490 500 510 520 530
ηD
Gp
f (MHz)
14
12
10
8
30
Gp(dB)
Pout(dBm)
20
10
450 460 470 480 490 500 510 520 530
I.R.L.
f (MHz)
Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A, Pin=5.5W
Freq. Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
Pin Pout
(MHz) (V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
450 2.63 2.63
37.4 5.5 49.0 80.2
11.7 9.76 60.6 65.0 -6.0
460 2.63 2.63 37.4 5.5 49.0 78.9 11.6 9.66 60.1 64.6 -6.7
470 2.63 2.63 37.4 5.5 48.9 78.2 11.5 9.73 59.2 63.7 -7.6
480 2.63 2.63 37.4 5.5 48.9 78.3 11.6 9.81 58.8 63.2 -8.6
490 2.63 2.63 37.4 5.5 49.0 78.6 11.6 9.91 58.4 62.8 -9.8
500 2.63 2.63 37.4 5.5 49.0 79.0 11.6 9.91 58.7 63.1 -11.3
510 2.63 2.63 37.4 5.5 49.0 78.6 11.6 9.78 59.2 63.6 -13.4
520 2.63 2.63 37.4 5.5 48.9 77.1 11.5 9.45 60.0 64.6 -15.7
530 2.63 2.63 37.4 5.5 48.7 74.2 11.3 8.96 60.6 65.5 -16.3
0
-10
-20
Input R. L. (dB) , Idd(A)
Application Note for Silicon RF Power Semiconductors
9/16
Page 10
6-2. RF Power vs.
530MHz
450MHz
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
INPUT POWER
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side0.5A
100
80
490MHz
60
40
450MHz
20
Pout , OUTPUT POWER(W)
0
0 2 4 6 8
Pin, INPUT POWER(W)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side0.5A
16
15
14
490MHz
50
45
40
35
Pout , OUTPUT POWER(dBm)
30
POWER GAIN
16
15
14
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side0.5A
530MHz
490MHz
10 20 30 40
Pin, INPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side0.5A
530MHz
13
12
11
10
9
Gp, POWER GAIN(dB)
8
7
6
0 20 40 60 80 100
450MHz
530MHz
Pout, OUTPUT POWER(W)
13
12
11
10
9
Gp, POWER GAIN(dB)
8
7
6
30 40 50
Pout, OUTPUT POWER(dBm)
490MHz
450MHz
Application Note for Silicon RF Power Semiconductors
10/16
Page 11
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
DRAIN EFFICIENCY
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
- AN-UHF-113-
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
80
70
530MHz
60
50
40
450MHz
30
ηD, DRAIN EFFICIENCY(%)
20
10
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
12
450MHz
10
490MHz
DRAIN CURRENT
80
70
60
530MHz
50
40
30
ηD, DRAIN EFFICIENCY(%)
20
450MHz
10
30 40 50
Pout, OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
12
10
450MHz
490MHz
8
490MHz
6
530MHz
4
Idd, DRAIN CURRENT(A)
2
0
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
8
6
490MHz
4
530MHz
Idd, DRAIN CURRENT(A)
2
0
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
11/16
Page 12
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
INPUT RETURN LOSS
Ta=+25deg.C,Vds=12.5V, Idq=Total1.0A/One-side 0.5A
0
450MHz
-10
490MHz
-20
530MHz
I.R.L., INPUT RETURN LOSS (dB)
-30
0 20 40 60 80 100
Pout, OUTPUT POWER(W)
Ta=+25deg. C., Vds=12.5V, Idq=Total 1.0A/One-side 0.5A
450MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.63 2.63 20.0 0.10 32.7 1.9 12.7 1.61 8.6 9.1 -5.8
2.63 2.63 21.0 0.13 33.7 2.3 12.7 1.76 9.9 10.4 -5.9
2.63 2.63 22.0 0.16 34.8 3.0 12.8 1.93 11.6 12.2 -5.9
2.63 2.63 23.0 0.20 35.8 3.8 12.8 2.13 13.2 13.9 -6.0
2.63 2.63 24.0 0.25 36.9 4.9 12.9 2.35 15.5 16.4 -6.0
2.63 2.63 25.0 0.32 38.0 6.2 13.0 2.61 17.8 18.7 -6.1
2.63 2.63 26.0 0.40 39.0 8.0 13.0 2.93 20.3 21.4 -6.1
2.63 2.63 27.0 0.50 40.1 10.2 13.1 3.29 23.3 24.5 -6.2
2.63 2.63 28.0 0.63 41.2 13.1 13.1 3.70 26.5 27.8 -6.2
2.63 2.63 29.0 0.80 42.2 16.8 13.2 4.16 30.1 31.7 -6.3
2.63 2.63 30.0 1.01 43.3 21.4 13.3 4.70 34.1 35.8 -6.3
2.63 2.63 31.0 1.27 44.3 27.1 13.3 5.29 38.5 40.4 -6.4
2.63 2.63 32.0 1.59 45.3 34.1 13.3 5.95 43.1 45.2 -6.5
2.63 2.63 33.0 1.99 46.3 42.3 13.3 6.68 47.6 50.0 -6.6
2.63 2.63 33.9 2.47 47.1 51.0 13.1 7.43 51.5 54.2 -6.6
2.63 2.63 34.9 3.07 47.8 59.6 12.9 8.14 54.8 57.8 -6.5
2.63 2.63 35.8 3.79 48.3 67.5 12.5 8.78 57.4 60.8 -6.4
2.63 2.63 36.7 4.66 48.7 74.5 12.0 9.35 59.1 63.1 -6.2
2.63 2.63 37.5 5.67 49.1 80.5 11.5 9.85 60.2 64.7 -6.0
2.63 2.63 38.3 6.81 49.3 85.6 11.0 10.26 60.8 66.1 -5.8
2.63 2.63 39.1 8.06 49.5 89.8 10.5 10.61 61.0 67.0 -5.6
2.63 2.63 39.7 9.24 49.7 92.8 10.0 10.88 60.9 67.7 -5.5
2.63 2.63 40.1 10.25 49.8 94.9 9.7 11.05 60.8 68.1 -5.3
2.63 2.63 40.4 11.09 49.8 96.5 9.4 11.19 60.5 68.4 -5.3
Pin Pout
Ta=+25deg.C,Vds=12.5V,Idq=Total1.0A/One-side 0.5A
0
450MHz
-10
490MHz
-20
530MHz
I.R.L., INPUT RETURN LOSS (dB)
-30
30 40 50
Pout, OUTPUT POWER(dBm)
Application Note for Silicon RF Power Semiconductors
12/16
Page 13
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
490MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.63 2.63 20.4 0.11 33.7 2.4 13.3 1.74 10.2 10.7 -9.7
2.63 2.63 21.4 0.14 34.8 3.0 13.4 1.90 11.9 12.5 -9.8
2.63 2.63 22.4 0.17 35.8 3.8 13.4 2.09 13.6 14.2 -9.8
2.63 2.63 23.4 0.22 36.9 4.9 13.5 2.31 15.9 16.6 -9.9
2.63 2.63 24.4 0.27 38.0 6.3 13.6 2.58 18.2 19.0 -10.0
2.63 2.63 25.4 0.35 39.0 8.0 13.6 2.86 20.9 21.9 -10.1
2.63 2.63 26.4 0.44 40.1 10.2 13.7 3.21 23.8 24.9 -10.2
2.63 2.63 27.4 0.55 41.1 13.0 13.7 3.61 27.1 28.3 -10.3
2.63 2.63 28.4 0.70 42.2 16.6 13.8 4.06 30.8 32.1 -10.4
2.63 2.63 29.4 0.88 43.2 21.1 13.8 4.56 34.9 36.4 -10.5
2.63 2.63 30.4 1.11 44.3 26.7 13.8 5.14 39.2 40.9 -10.6
2.63 2.63 31.4 1.39 45.3 33.5 13.8 5.78 43.8 45.7 -10.8
2.63 2.63 32.4 1.74 46.2 41.4 13.8 6.49 48.2 50.3 -11.0
2.63 2.63 33.4 2.18 47.0 49.7 13.6 7.23 51.9 54.2 -11.1
2.63 2.63 34.3 2.72 47.6 57.7 13.3 7.94 54.7 57.4 -11.0
2.63 2.63 35.3 3.37 48.1 65.0 12.9 8.60 56.6 59.7 -10.8
2.63 2.63 36.2 4.14 48.5 71.3 12.4 9.18 57.9 61.5 -10.4
2.63 2.63 37.0 5.05 48.9 76.8 11.8 9.69 58.6 62.7 -9.9
2.63 2.63 37.8 6.09 49.1 81.5 11.3 10.13 59.0 63.7 -9.4
2.63 2.63 38.6 7.19 49.3 85.2 10.7 10.48 59.0 64.5 -9.0
2.63 2.63 39.1 8.18 49.4 87.9 10.3 10.74 58.9 64.9 -8.7
2.63 2.63 39.6 9.05 49.5 89.9 10.0 10.93 58.7 65.2 -8.4
2.63 2.63 39.9 9.74 49.6 91.3 9.7 11.05 58.5 65.5 -8.3
2.63 2.63 40.1 10.23 49.6 92.1 9.5 11.14 58.3 65.6 -8.1
Pin Pout
530MHz
Vgg1 Vgg2 Gp ID(RF) ηadd ηD I.R.L.
(V) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)
2.63 2.63 19.5 0.09 33.5 2.2 13.9 1.65 10.1 10.5 -20.5
2.63 2.63 20.5 0.11 34.3 2.7 13.8 1.78 11.5 12.0 -21.4
2.63 2.63 21.5 0.14 35.4 3.5 13.9 1.93 13.5 14.1 -20.9
2.63 2.63 22.5 0.18 36.4 4.3 13.8 2.10 15.4 16.1 -21.0
2.63 2.63 23.5 0.22 37.5 5.6 13.9 2.30 18.2 19.0 -21.1
2.63 2.63 24.5 0.28 38.5 7.0 14.0 2.54 20.9 21.7 -21.2
2.63 2.63 25.5 0.36 39.5 8.9 14.0 2.80 23.9 24.9 -21.3
2.63 2.63 26.5 0.45 40.5 11.2 14.0 3.11 27.2 28.3 -21.3
2.63 2.63 27.5 0.56 41.5 14.2 14.0 3.48 30.8 32.1 -21.4
2.63 2.63 28.5 0.71 42.6 18.0 14.0 3.88 35.1 36.5 -21.5
2.63 2.63 29.5 0.90 43.6 22.8 14.0 4.34 39.7 41.3 -21.7
2.63 2.63 30.5 1.13 44.6 28.7 14.0 4.86 44.5 46.4 -22.1
2.63 2.63 31.5 1.42 45.5 35.5 14.0 5.44 49.3 51.4 -23.1
2.63 2.63 32.5 1.78 46.3 43.0 13.8 6.05 53.7 56.0 -25.8
2.63 2.63 33.5 2.23 47.0 50.4 13.6 6.66 57.0 59.6 -29.7
2.63 2.63 34.4 2.78 47.6 57.3 13.1 7.25 59.3 62.3 -26.1
2.63 2.63 35.4 3.45 48.0 63.2 12.6 7.78 60.7 64.2 -21.0
2.63 2.63 36.3 4.29 48.4 68.4 12.0 8.25 61.4 65.5 -17.4
2.63 2.63 37.2 5.26 48.6 72.7 11.4 8.65 61.6 66.4 -15.0
2.63 2.63 38.0 6.37 48.8 76.1 10.8 8.99 61.4 67.0 -13.3
2.63 2.63 38.8 7.62 49.0 79.1 10.2 9.28 61.0 67.5 -12.0
2.63 2.63 39.5 8.89 49.1 81.5 9.6 9.50 60.5 67.9 -11.1
2.63 2.63 40.0 10.06 49.2 83.3 9.2 9.66 60.0 68.2 -10.5
2.63 2.63 40.4 11.09 49.3 84.7 8.8 9.79 59.5 68.5 -10.0
Pin Pout
Application Note for Silicon RF Power Semiconductors
13/16
Page 14
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
6-3. Drain Quiescent Current vs.
OUTPUT POWER and DRAIN EFFICIENCY
Pin=5.5W
Ta=+25deg.C,Vds=12.5V
90
450MHz
- AN-UHF-113-
Pin=5.5W
Ta=+25deg.C,Vds=12.5V
80
80
70
490MHz
530MHz
Pout , OUTPUT POWER(W)
60
400 600 800 1000 1200 1400 1600
Idq, DRAIN QUIESCENT CURRENT(mA)
70
60
450MHz
ηD, DRAIN EFFICIENCY (%)
50
400 600 800 1000 1200 1400 1600
IDQ, DRAIN QUIESCENT CURRENT(mA)
530MHz
490MHz
Ta=+25deg. C., Vds=12.5V, Pin=5.5W
450MHz Vgg1 Vgg2 Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.55 2.56 500 37.5 5.6 49.0 79.0 9.64 65.0 60.0 11.5 -6.0
2.55 2.56 700 37.5 5.6 49.0 79.3 9.64 64.8 60.2 11.5 -6.0
2.58 2.57 863 37.5 5.6 49.0 79.6 9.69 64.7 60.2 11.5 -6.0
2.60 2.60 1038 37.5 5.6 49.0 80.0 9.76 64.6 60.1 11.5 -6.0
2.63 2.63 1213 37.5 5.6 49.1 80.6 9.84 64.6 60.1 11.6 -6.0
2.65 2.64 1413 37.5 5.6 49.1 81.1 9.90 64.6 60.1 11.6 -6.0
2.68 2.67 1625 37.5 5.6 49.1 81.7 9.98 64.6 60.1 11.6 -6.1
2.70 2.70 1850 37.5 5.6 49.1 82.2 10.04 64.6 60.2 11.7 -6.1
Pin Pout
490MHz Vgg1 Vgg2 Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.55 2.56 488 37.4 5.5 48.9 77.2 9.56 63.7 59.1 11.5 -9.6
2.55 2.56 625 37.4 5.5 48.9 77.4 9.63 63.4 58.9 11.5 -9.6
2.58 2.57 763 37.4 5.5 48.9 77.8 9.69 63.3 58.8 11.5 -9.6
2.60 2.60 900 37.4 5.5 48.9 78.3 9.76 63.2 58.8 11.5 -9.7
2.63 2.63 1063 37.4 5.5 49.0 78.7 9.82 63.1 58.7 11.6 -9.7
2.65 2.64 1250 37.4 5.5 49.0 79.1 9.90 63.0 58.6 11.6 -9.7
2.68 2.67 1438 37.4 5.5 49.0 79.6 9.96 63.0 58.6 11.6 -9.7
2.70 2.70 1650 37.4 5.5 49.0 80.0 10.03 62.9 58.6 11.6 -9.7
530MHz Vgg1 Vgg2 Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.55 2.56 500 37.4 5.5 48.7 73.4 8.71 66.3 61.4 11.3 -16.0
2.55 2.56 625 37.4 5.5 48.7 73.9 8.79 66.2 61.2 11.3 -16.0
2.58 2.57 763 37.4 5.5 48.7 74.1 8.84 66.0 61.1 11.3 -16.1
2.60 2.60 900 37.4 5.5 48.7 74.4 8.89 65.9 61.0 11.3 -16.2
2.63 2.63 1063 37.4 5.5 48.7 74.7 8.94 65.8 61.0 11.3 -16.2
2.65 2.64 1250 37.4 5.5 48.8 75.1 9.00 65.7 60.9 11.4 -16.2
2.68 2.67 1438 37.4 5.5 48.8 75.5 9.06 65.6 60.8 11.4 -16.2
2.70 2.70 1650 37.4 5.5 48.8 75.8 9.11 65.5 60.7 11.4 -16.3
Pin Pout
Pin Pout
Application Note for Silicon RF Power Semiconductors
14/16
Page 15
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
6-4. DC Power Supply vs.
- AN-UHF-113-
OUTPUT POWER and DRAIN EFFICIENCY
Pin=5.5W
Ta=+25deg.C, Vgg fixedat Idq=Total1.0A/One-side 0.5A, Vds=12.5V
100
90
80
70
60
Pout , OUTPUT POWER(W)
50
10 11 12 13 14 15
450MHz
530MHz
490MHz
VDD, SUPPLY VOLTAGE(V)
DRAIN CURRENT
Pin=5.5W
Ta=+25deg.C, Vgg fixedat Idq=Total1.0A/One-side 0.5A, Vds=12.5V
12
Pin=5.5W
Ta=+25deg.C, Vgg fixedat Idq=Total1.0A/One-side 0.5A, Vds=12.5V
75
70
65
60
450MHz 490MHz
55
ηD, DRAIN EFFICIENCY(%)
50
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
530MHz
11
490MHz
10
9
8
Idd, DRAIN CURRENT(A)
7
6
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
450MHz
530MHz
Application Note for Silicon RF Power Semiconductors
15/16
Page 16
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
Ta=+25deg. C., Pin=5.5W
450MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 2.63 10.98 0.988 37.4 5.5 48.1 64.0 8.90 66.3 60.6 10.7 -5.7
2.63 2.63 11.49 1.05 37.4 5.5 48.3 68.4 9.15 65.8 60.5 11.0 -5.8
2.63 2.63 11.98 1.088 37.4 5.5 48.6 72.7 9.40 65.3 60.3 11.2 -5.9
2.63 2.63 12.48 1.125 37.4 5.5 48.9 76.8 9.63 64.7 60.0 11.5 -6.0
2.63 2.63 12.99 1.15 37.4 5.5 49.1 81.1 9.86 64.1 59.7 11.7 -6.1
2.63 2.63 13.48 1.188 37.4 5.5 49.3 85.3 10.09 63.4 59.3 11.9 -6.2
2.63 2.63 13.98 1.225 37.4 5.5 49.5 89.2 10.28 62.8 58.9 12.1 -6.3
2.63 2.63 14.49 1.263 37.4 5.5 49.7 93.0 10.46 62.0 58.3 12.3 -6.4
Pin Pout
490MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 2.63 10.98 0.975 37.4 5.5 48.0 62.7 9.04 64.0 58.4 10.6 -8.8
2.63 2.63 11.49 1.038 37.4 5.5 48.3 67.4 9.30 63.8 58.6 10.9 -9.0
2.63 2.63 11.98 1.088 37.4 5.5 48.6 71.7 9.54 63.5 58.6 11.1 -9.3
2.63 2.63 12.48 1.125 37.4 5.5 48.8 76.1 9.76 63.2 58.7 11.4 -9.5
2.63 2.63 12.99 1.15 37.4 5.5 49.1 80.8 9.99 63.0 58.7 11.7 -9.8
2.63 2.63 13.48 1.188 37.4 5.5 49.3 85.0 10.18 62.7 58.6 11.9 -10.0
2.63 2.63 13.98 1.225 37.4 5.5 49.5 89.2 10.38 62.2 58.4 12.1 -10.2
2.63 2.63 14.49 1.263 37.4 5.5 49.7 93.7 10.58 61.8 58.2 12.3 -10.4
530MHz Vgg1 Vgg2 Vdd Idq Idd ηD ηadd Gain I.R.L.
(V) (V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)
2.63 2.63 10.98 0.975 37.4 5.5 47.7 58.8 8.18 66.2 60.0 10.3 -12.6
2.63 2.63 11.49 1.038 37.4 5.5 48.0 63.2 8.41 66.0 60.3 10.6 -13.5
2.63 2.63 11.98 1.075 37.4 5.5 48.3 67.6 8.64 66.1 60.7 10.9 -14.4
2.63 2.63 12.48 1.113 37.4 5.5 48.6 72.0 8.84 66.0 61.0 11.2 -15.4
2.63 2.63 12.99 1.138 37.4 5.5 48.8 76.7 9.07 65.8 61.0 11.4 -16.5
2.63 2.63 13.48 1.175 37.4 5.5 49.1 81.0 9.25 65.6 61.1 11.7 -17.8
2.63 2.63 13.98 1.213 37.4 5.5 49.3 85.5 9.45 65.4 61.2 11.9 -19.2
2.63 2.63 14.49 1.25 37.4 5.5 49.5 89.8 9.63 65.0 61.1 12.1 -21.1
Pin Pout
Pin Pout
Application Note for Silicon RF Power Semiconductors
16/16
Loading...