MITSUBISHI AN-UHF-113 User Manual
APPLICATION NOTE
SUBJECT: RD70HUF2 single-stage amplifier with f=450-530MHz evaluation board
Features:
- The evaluation board for RD70HUF2
- Frequency: 450-530MHz
- Typical input power: 5.5W
- Typical output power: 75W
- Quiescent current: Total is 1000mA, 500mA per one FET chip
Silicon RF Power Semiconductors
Document NO. AN-UHF-113
Date : 27thMay 2011
Prepared : Y.Koashi
K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
- Operating current: approx. 10A
- Surface-mounted RF power amplifier structure
Gate Bias 1
(Vgg1)
RF IN RF OUT
Gate Bias 2
(Vgg2)
Drain Bias
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
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Contents
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
Page
1. Equivalent Circuitry ------------------------------------------------------------
2. PCB Layout -----------------------------------------------------------------------
3. Standard Land Pattern Dimensions --------------------------------------
4. Component List and Standard Deliverable -------------------------------------
5. Thermal Design of Heat Sink ------------------------------------------------
6. Typical RF Characteristics ---------------------------------------------------6-1. Frequency vs. -----------------------------------------------------------6-2. RF Power vs. ------------------------------------------------------------6-3. Drain Quiescent Current vs. ---------------------------------------6-4. DC Power Supply vs. -------------------------------------------------
3
4
6
7
8
9
9
10
14
15
Application Note for Silicon RF Power Semiconductors
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RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
W=1.0
L=18.8
W=0.8
L=34.0
W=2.0
L=13.0
W=3.6
L=2.9
W=1.8
L=4.5
Source
Electrode1
W=4.6
L=5.0
W=3.6
L=2.9
W=1.8
L=4.5
W=1.3
L=36
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
Via Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
Characteristic impidance
50ohm
W=1.3
L=36
Source
Electrode3
Source
Electrode4
W=5.0
L=3.7
1. Equivalent Circuitry
- AN-UHF-113-
RFOUT
Drain Bias
C36
W=2.0
L=11.0
ML2, T=1.1
C33
C34 C35
ML2 ML2
W=2.0
L=14.0
L1
50ohm
Characteristic impidance
C32
Via1
Via1
Via1
Via1
7Via Holes
Via1
Via1
Via1
C30
C28
C26
ML2
ML2
C24
ML1
C22
C20
ML1 ML1
Center Source
ML1
W=4.6
L=5.0
Electrode
ML1
ML1
C29
C27 C31
C25
C23
C21
Electrode2
Source
RD70HUF2
ML1
W=4.4
L=4.6
C16
ML1
R2
C12
C13
W=5.0
L=3.7
Via1
1Via Hole
C8
R4
C6
C10
R1
C4
ML1
Via1
Via1
4Via Holes
Via1
ML1
ML1
W=4.4
L=4.6
C17
ML1
R3
C15
C11
C5
Via1
ML1
W=1.0
L=18.8
C3
C14
Via1
1Via Hole
C7
C9
R5
C18
C2
ML2
C19
C1
ML2
W=2.0
L=16.0
Gate Bias1
RF IN
Application Note for Silicon RF Power Semiconductors
Gate Bias2
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2. PCB Layout
300p
2.2K
300p
4
ｐ
TOP VIEW (Layer 1)
6ｐ
Cu
RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
- AN-UHF-113-
BOARD OUTLINE: 75.0*46.0(mm)
1000p
9p
Cu
2.2K
1000p
BOTTOM VIEW (Layer 4), Perspective through Top View
22p
27p
100p
100p
27p
22p
2.2ohm
1000p 1000p
100p
100ohm
100p
100p
100ohm
100p
12p12p
39p
33p
39p
3.6p
1000p
8005C
1000p
Cu
1p
22p
6.8p
36p
36p
6.8p
22p
3.6p
1p
Application Note for Silicon RF Power Semiconductors
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RD70HUF2 single-stage amplifier with f=450-to-530MHz evaluation board
Internal Layer (Layer 2) , Perspective Through Top View
- AN-UHF-113-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial Total CompletedThickness (includedresist coating): 1.6mm
Layer1 ( CopperT: 43um with GoldPlating)
200um
Prepreg
Layer2 (Copper T:35um)
930um
200um
Core
Prepreg
Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz
Layer3 (Copper T:35um)
Layer4 ( CopperT: 43um with GoldPlating)
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
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