MITSUBISHI AN-UHF-112 User Manual

APPLICATION NOTE

SUBJECT: RD35HUF2 single-stage amplifier with f=450-530MHz evaluation board

Features:

- The evaluation board for RD35HUF2

- Frequency: 450-530MHz

- Typical input power: 3W

- Typical output power: 40W

- Quiescent current: 500mA

Silicon RF Power Semiconductors

Document NO. AN-UHF-112
Date : 27thMay 2011
Prepared : Y.Koashi

K.Mori
Confirmed : T.Okawa
(Taking charge of Silicon RF by

MIYOSHI Electronics)

- Operating current: approx. 6A

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

RF IN RF OUT

PCB L=75mm W=46mm

Application Note for Silicon RF Power Semiconductors

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Contents

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

Page

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Standard Land Pattern Dimensions --------------------------------------

4. Component List and Standard Deliverable -----------------------------------------

5. Thermal Design of Heat Sink ------------------------------------------------

6. Typical RF Characteristics ---------------------------------------------------­1-1. Frequency vs. -----------------------------------------------------------­1-2. RF Power vs. ------------------------------------------------------------­1-3. Drain Quiescent Current vs. ---------------------------------------­1-4. DC Power Supply vs. -------------------------------------------------

3
4
6
7
8
9

9
10
14
15

Application Note for Silicon RF Power Semiconductors

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RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Board material: Glass Epoxy Substrate--

er=4.8, TanD=0.018 @1GHz

Micro Strip Line Substrate Thickness: ML1, T=0.2

VIA Hole Dimensions, Diameter=0.8 Length=1.6

UNIT: W/L/T, mm

W=4.0

L=11.5

W=2.0

L=14.0

W=4.6

L=5.3

W=1.8

L=4.5

W=1.2

L=15.0

W=6.6

L=4.8

W=2.0

L=16.0

1. Equivalent Circuitry

- AN-UHF-112-

RFOUT

Drain Bias

C17

C20

W=2.0

L=14.0

C18 C19

Characteristic impidance 50ohm

L1

W=1.2

L=20.0

VIA

W=3.6

C10

Source

Electrode1

RD35HUF2

Source

Electrode3

L=2.9

ML1 ML1 ML1 ML1 VIAVIA ML2 ML2 ML2 ML2

C5

ML1 ML1

C16

VIA

C12 C13 C14 C15

C11

Source

Electrode2

Source

Electrode4

C6

W=2.2

L=3.0

C4

ML2, T=1.1

VIA

R1

C3

ML2

W=0.8

L=18.0

C7C8

ML2

C1

Gate Bias

RF IN

ML2

W=2.0

C2

L=11.0

Characteristic impidance 50ohm

Application Note for Silicon RF Power Semiconductors

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2. PCB Layout

9 .1 p

6.2p

18p

9p

18p

TOP VIEW (Layer 1)

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

BOARD OUTLINE: 75.0*46.0(mm)

330 p

Cu

100 0p

100 0p

Cu

0ohm

2..2 K

18p

5 .1 p

BOTTOM VIEW (Layer 4), Perspective through Top View

100 0p

100 0p

4006 C

Cu

330 p

Cu

3 3 p

1 2 p

2 .4 p

3 3 p

3 . 3 p

Application Note for Silicon RF Power Semiconductors

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RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Internal Layer (Layer 2) , Perspective Through Top View

- AN-UHF-112-

BOARD OUTLINE: 75.0*46.0(mm)

Internal Layer (Layer 3) , Perspective Through Top View

Substrate Condition

Nomial Total CompletedThickness (included resist coating): 1.6mm

Layer1 ( CopperT: 43um withGold Plating)

200um

Prepreg

Layer2 (Copper T:35um)

930um

200um

Core

Prepreg

Er: 4.7 @ 1GHz
TanD:0.018@ 1GHz

Layer3 (Copper T:35um)

Layer4 ( CopperT: 43um withGold Plating)

Material: MCL-E-679G(R), Hitachi Chemical Co.

Application Note for Silicon RF Power Semiconductors

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