MITSUBISHI AN-UHF-112 User Manual

Download

APPLICATION NOTE

SUBJECT: RD35HUF2 single-stage amplifier with f=450-530MHz evaluation board

Features:

- The evaluation board for RD35HUF2

- Frequency: 450-530MHz

- Typical input power: 3W

- Typical output power: 40W

- Quiescent current: 500mA

Silicon RF Power Semiconductors

Document NO. AN-UHF-112 Date : 27thMay 2011 Prepared : Y.Koashi

K.Mori Confirmed : T.Okawa (Taking charge of Silicon RF by

MIYOSHI Electronics)

- Operating current: approx. 6A

- Surface-mounted RF power amplifier structure

Gate Bias Drain Bias

RF IN RF OUT

PCB L=75mm W=46mm

Application Note for Silicon RF Power Semiconductors

1/16

Contents

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

Page

1. Equivalent Circuitry ------------------------------------------------------------

2. PCB Layout -----------------------------------------------------------------------

3. Standard Land Pattern Dimensions --------------------------------------

4. Component List and Standard Deliverable -----------------------------------------

5. Thermal Design of Heat Sink ------------------------------------------------

6. Typical RF Characteristics ---------------------------------------------------1-1. Frequency vs. -----------------------------------------------------------1-2. RF Power vs. ------------------------------------------------------------1-3. Drain Quiescent Current vs. ---------------------------------------1-4. DC Power Supply vs. -------------------------------------------------

3 4 6 7 8 9

9 10 14 15

Application Note for Silicon RF Power Semiconductors

2/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Board material: Glass Epoxy Substrate--

er=4.8, TanD=0.018 @1GHz

Micro Strip Line Substrate Thickness: ML1, T=0.2

VIA Hole Dimensions, Diameter=0.8 Length=1.6

UNIT: W/L/T, mm

W=4.0

L=11.5

W=2.0

L=14.0

W=4.6

L=5.3

W=1.8

L=4.5

W=1.2

L=15.0

W=6.6

L=4.8

W=2.0

L=16.0

1. Equivalent Circuitry

- AN-UHF-112-

RFOUT

Drain Bias

C17

C20

W=2.0

L=14.0

C18 C19

Characteristic impidance 50ohm

W=1.2

L=20.0

VIA

W=3.6

C10

Source

Electrode1

RD35HUF2

Source

Electrode3

L=2.9

ML1 ML1 ML1 ML1 VIAVIA ML2 ML2 ML2 ML2

ML1 ML1

C16

VIA

C12 C13 C14 C15

C11

Source

Electrode2

Source

Electrode4

W=2.2

L=3.0

ML2, T=1.1

VIA

ML2

W=0.8

L=18.0

C7C8

ML2

Gate Bias

RF IN

ML2

W=2.0

L=11.0

Characteristic impidance 50ohm

Application Note for Silicon RF Power Semiconductors

3/16

2. PCB Layout

9 .1 p

6.2p

18p

TOP VIEW (Layer 1)

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

BOARD OUTLINE: 75.0*46.0(mm)

330 p

100 0p

0ohm

2..2 K

18p

5 .1 p

BOTTOM VIEW (Layer 4), Perspective through Top View

100 0p

4006 C

330 p

3 3 p

1 2 p

2 .4 p

3 3 p

3 . 3 p

Application Note for Silicon RF Power Semiconductors

4/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Internal Layer (Layer 2) , Perspective Through Top View

- AN-UHF-112-

BOARD OUTLINE: 75.0*46.0(mm)

Internal Layer (Layer 3) , Perspective Through Top View

Substrate Condition

Nomial Total CompletedThickness (included resist coating): 1.6mm

Layer1 ( CopperT: 43um withGold Plating)

200um

Prepreg

Layer2 (Copper T:35um)

930um

200um

Core

Prepreg

Er: 4.7 @ 1GHz TanD:0.018@ 1GHz

Layer3 (Copper T:35um)

Layer4 ( CopperT: 43um withGold Plating)

Material: MCL-E-679G(R), Hitachi Chemical Co.

Application Note for Silicon RF Power Semiconductors

5/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

3. Standard Land Pattern Dimensions

- AN-UHF-112-

6.52.8 13.54.9 3.5

8.3

3.3

3.8

3.2

18.0

19.7

23.4 25.4

UNIT: mm

Application Note for Silicon RF Power Semiconductors

6/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Diameter: Wire=0.8mm Inside=2.2mm

T/N of coils=6

YC CORPORATION Co.,Ltd.

Support of bias connectors

- AN-UHF-112-

4. Component List and Standard Deliverable

- Component List

No. Description P/N Qty Manufacturer Tr MOSFET RD35HUF2 1 Mitsubishi Electric Corporation C 1 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C 2 6.2 pF 1608 Hi-Q 100V GQM1882C2A6R2DB01 1 MURATA MANUFACTURING CO., LTD. C 3 18 pF 1608 Hi-Q 50V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 4 9 pF 1608 Hi-Q 50V GQM1882C1H9R0DB01 1 MURATA MANUFACTURING CO., LTD. C 5 18 pF 1608 Hi-Q 50V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 6 18 pF 1608 Hi-Q 50V GQM1882C1H180JB01 1 MURATA MANUFACTURING CO., LTD. C 7 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 8 1000 pF 2012 50V GRM2162C1H102JA01B 1 MURATA MANUFACTURING CO., LTD. C 10 33 pF 2012 Hi-Q 50V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C 11 33 pF 2012 Hi-Q 50V GQM2192C1H330JB01 1 MURATA MANUFACTURING CO., LTD. C 12 2.4 pF 2012 Hi-Q 100V GQM2193C2AH2R4CB01 1 MURATA MANUFACTURING CO., LTD. C 13 12 pF 2012 Hi-Q 100V GQM2192C2A120JB01 1 MURATA MANUFACTURING CO., LTD. C 14 3.3 pF 2012 Hi-Q 100V GQM2193C2AH3R3CB01 1 MURATA MANUFACTURING CO., LTD. C 15 5.1 pF 2012 Hi-Q 100V GQM2192C2A5R1DB01 1 MURATA MANUFACTURING CO., LTD. C 16 9.1 pF 2012 Hi-Q 100V GQM2192C2A9R1DB01 1 MURATA MANUFACTURING CO., LTD. C 17 330 pF 3216 200V GRM31M2C2D331JY21B 1 MURATA MANUFACTURING CO., LTD. C 18 1000 pF 2012 100V GRM2162C2A102JA01B 1 MURATA MANUFACTURING CO., LTD. C 19 1000 pF 2012 100V GRM2162C2A102JA01B 1 MURATA MANUFACTURING CO., LTD. C 20 220 uF 35V EEUFC1V221 1 Panasonic Corp. L 1 29 nH * R 1 2.2k ohm 1608 RPC05T222J 1 TAIYOSHA ELECTRIC CO.,LTD. Pb PCB MS3A0196 1 Homebuilt Rc SMA female connector PAF-S00-002 2 GIGALANE Corporation Bc 1 Bias connector red color TM-605R 2 MSK Corporation Bc 2 Bias connector black color TM-605B 2 MSK Corporation Pe Aluminum pedestal 1 Homebuilt Pd ThermalSilicon Compound G746 - Shin-Etsu Chemical Co.,Ltd Sbc

Conductiong wire 4 Homebuilt Screw M3 10 Screw M2.6 4 Screw M2 4 * Inductor of Rolling Coil measurement condition : f=100MHz

2 Homebuilt

- Standard Deliverable

TYPE1 Evaluation Board assembled with all the component including the option TYPE2 PCB (raw board)

Application Note for Silicon RF Power Semiconductors

7/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

5. Thermal Design of Heat Sink

- AN-UHF-112-

M3 Screw

Pb Tr

Junction point of MOSFET chip

th(ch-Pe bottom)=Rth(ch-case)+Rth(case-Pe bottom)

Thermally connect

Heat Sink

Tch Also, operating Tj(“Tj Therefore T T

Pe bottom-air

*: an instance assuming high temperature of standard ambient conditions is 60 deg. C.

=(Pout/Efficiency-Pout+Pin) x R

(delta)

”)=140 (deg. C.), in case of RD series that Tch

(op)

Pe bottom-air

=“Tj

(op)

as delta temperature between Pe bottom and ambient 60 deg. C.* is

” - Tch

(delta)

- Ta

(60deg.C.)

th(ch-Pe bottom)

=(35W/50%-35W+3) x 0.86=32.7 (deg. C.)

=140-32.7-60=47.3 (deg. C.)

(max)

(in this package)

=0.86 (deg. C./W)

=175 (deg. C.)

In terms of long-term reliability, “Tj

” has to be kept less than 140 deg. C. i.e. T

(op)

Pe bottom-air

has to be less than 47.3 deg. C.. The thermal resistance of the heat sink to border it: Rth

(Pe bottom-air)=TPe bottom-air

/(Pout/Efficiency-Pout+Pin)=47.3/(35W/50%-35W+3)=1.2 (deg. C./W) Therefore it is preferable that the thermal resistance of the heat sink is much smaller than 1.2 deg. C./W.

For assembly method including relevant precaution, refer to AN-GEN-070

Application Note for Silicon RF Power Semiconductors

8/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

6. Typical RF Characteristics 6-1. Frequency vs.

OUTPUT POWER, POWER GAIN, DRAIN EFFICIENCY, DRAIN CURRENT and INPUT RETURN LOSS

Ta=+25deg.C, Vds=12.5V,Idq=0.5A, Pin=3W

Pout(W) , Drain Effi(%)

ηD

Pout

Gp(dB)

Ta=+25deg.C Vds=12.5V, Idq=0.5A, Pin=3W

Pout(dBm)

Pout

Idd

I.R.L.

-10

Input R. L. (dB) , Idd(A)

450 460 470 480 490 500 510 520 530

f (MHz)

450 460 470 480 490 500 510 520 530

f (MHz)

Ta=+25deg. C., Vds=12.5V, Idq=0.5A, Pin=3.0W

Freq. Vgg Gp ID(RF) ηadd ηD I.R.L.

Pin Pout

(MHz) (V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)

450 2.72

34.8 3.0 46.2 42.1

11.4 5.59 55.7 60.0 -5.9 460 2.72 34.8 3.0 46.2 42.1 11.5 5.56 56.0 60.3 -7.1 470 2.72 34.8 3.0 46.3 42.3 11.4 5.54 56.5 60.8 -8.5 480 2.72 34.8 3.0 46.4 43.4 11.6 5.73 56.1 60.3 -10.4 490 2.72 34.8 3.0 46.5 44.4 11.7 5.78 57.1 61.2 -12.7 500 2.72 34.8 3.0 46.5 44.3 11.6 5.75 57.1 61.3 -15.1 510 2.72 34.8 3.0 46.4 43.2 11.6 5.68 56.4 60.6 -17.4 520 2.72 34.8 3.0 46.3 42.5 11.5 5.49 57.3 61.7 -17.3 530 2.72 34.8 3.0 46.2 41.2 11.3 5.20 58.5 63.1 -15.0

-20

Application Note for Silicon RF Power Semiconductors

9/16

6-2. RF Power vs.

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

INPUT POWER

Ta=+25deg.C,Vds=12.5V,Idq=0.5A

490MHz

450MHz

Pout , OUTPUT POWER(W)

0 1 2 3 4 5 6

Pin, INPUT POWER(W)

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

530MHz

Pout , OUTPUT POWER(dBm)

POWER GAIN

Ta=+25deg.C,Vds=12.5V,Idq=0.5A

450MHz

490MHz

10 20 30

Pin, INPUT POWER(dBm)

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

530MHz

490MHz

450MHz

Gp, POWER GAIN(dB)

0 10 20 30 40 50 60

Pout, OUTPUT POWER(W)

530MHz

490MHz

450MHz

530MHz

Gp, POWER GAIN(dB)

30 40 50

Pout, OUTPUT POWER(dBm)

Application Note for Silicon RF Power Semiconductors

10/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

- AN-UHF-112-

DRAIN EFFICIENCY

Ta=+25deg.C,Vds=12.5V,Idq=0.5A

530MHz

450MHz

490MHz

ηD, DRAIN EFFICIENCY(%)

0 10 20 30 40 50 60

Pout, OUTPUT POWER(W)

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

ηD, DRAIN EFFICIENCY(%)

DRAIN CURRENT

530MHz

490MHz

450MHz

30 40 50

Pout, OUTPUT POWER(dBm)

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

490MHz

450MHz

530MHz

Idd, DRAIN CURRENT(A)

0 10 20 30 40 50 60

Pout, OUTPUT POWER(W)

490MHz

450MHz

530MHz

Idd, DRAIN CURRENT(A)

30 40 50

Pout, OUTPUT POWER(dBm)

Application Note for Silicon RF Power Semiconductors

11/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

INPUT RETURN LOSS

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

450MHz

-5

490MHz

-10

-15

530MHz

-20

I.R.L., INPUT RETURN LOSS (dB)

-25 0 10 20 30 40 50 60

Pout, OUTPUT POWER(W)

Ta=+25deg. C., Vds=12.5V, Idq=0.5A

450MHz

Vgg Gp ID(RF) ηadd ηD I.R.L.

Pin Pout

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)

2.72 20.5 0.11 33.4 2.2 12.9 1.23 13.5 14.2 -5.7

2.72 21.5 0.14 34.4 2.7 12.9 1.36 15.2 16.0 -5.7

2.72 22.4 0.18 35.5 3.5 13.0 1.53 17.6 18.5 -5.8

2.72 23.4 0.22 36.5 4.5 13.1 1.71 19.9 20.9 -5.9

2.72 24.4 0.28 37.7 5.8 13.2 1.93 23.1 24.2 -5.9

2.72 25.4 0.35 38.7 7.5 13.3 2.18 26.2 27.5 -6.0

2.72 26.4 0.44 39.8 9.5 13.4 2.45 29.6 31.1 -6.1

2.72 27.4 0.55 40.9 12.2 13.4 2.78 33.5 35.1 -6.1

2.72 28.4 0.70 41.9 15.4 13.5 3.14 37.6 39.4 -6.2

2.72 29.4 0.88 42.9 19.4 13.5 3.54 41.9 43.9 -6.3

2.72 30.4 1.10 43.8 23.9 13.4 3.98 45.8 48.0 -6.5

2.72 31.4 1.38 44.6 28.5 13.2 4.41 49.2 51.7 -6.5

2.72 32.4 1.73 45.2 33.0 12.8 4.83 51.9 54.7 -6.4

2.72 33.4 2.16 45.7 37.3 12.4 5.21 53.9 57.2 -6.3

2.72 34.3 2.70 46.1 41.1 11.8 5.55 55.3 59.2 -6.0

2.72 35.3 3.37 46.5 44.5 11.2 5.86 56.1 60.7 -5.8

2.72 36.2 4.19 46.8 47.4 10.5 6.14 56.3 61.8 -5.5

2.72 37.2 5.20 47.0 50.0 9.8 6.38 56.3 62.8 -5.2

2.72 38.1 6.40 47.2 52.4 9.1 6.58 56.0 63.7 -5.0

2.72 38.9 7.80 47.4 54.5 8.4 6.76 55.2 64.4 -4.7

2.72 39.7 9.40 47.5 56.3 7.8 6.91 54.2 65.1 -4.5

Ta=+25deg.C,Vds=12.5V, Idq=0.5A

450MHz

-5

-10

-15

-20

I.R.L., INPUT RETURN LOSS (dB)

-25 30 40 50

Pout, OUTPUT POWER(dBm)

490MHz

530MHz

Application Note for Silicon RF Power Semiconductors

12/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

490MHz

530MHz

Vgg Gp ID(RF) ηadd ηD I.R.L.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)

2.72 19.4 0.09 32.7 1.8 13.3 1.14 12.4 13.0 -11.2

2.72 20.4 0.11 33.6 2.3 13.2 1.26 14.0 14.7 -11.3

2.72 21.4 0.14 34.7 3.0 13.3 1.40 16.2 17.0 -11.4

2.72 22.4 0.17 35.7 3.8 13.3 1.58 18.2 19.1 -11.4

2.72 23.4 0.22 36.9 4.9 13.5 1.76 21.1 22.1 -11.5

2.72 24.4 0.28 37.9 6.2 13.5 1.98 24.1 25.2 -11.6

2.72 25.4 0.35 39.0 8.0 13.6 2.23 27.4 28.6 -11.6

2.72 26.4 0.44 40.1 10.2 13.6 2.51 30.9 32.3 -11.7

2.72 27.5 0.56 41.1 13.0 13.7 2.85 34.8 36.4 -11.8

2.72 28.5 0.71 42.2 16.5 13.7 3.21 39.2 41.0 -12.0

2.72 29.5 0.89 43.1 20.6 13.7 3.64 43.4 45.4 -12.2

2.72 30.5 1.12 44.0 25.4 13.6 4.09 47.4 49.6 -12.6

2.72 31.5 1.40 44.8 30.3 13.3 4.55 50.7 53.2 -13.0

2.72 32.4 1.75 45.4 35.0 13.0 5.00 53.2 56.0 -13.3

2.72 33.4 2.17 45.9 39.2 12.6 5.39 55.0 58.3 -13.3

2.72 34.3 2.68 46.3 43.0 12.1 5.73 56.3 60.1 -12.9

2.72 35.2 3.29 46.6 46.1 11.5 6.01 57.0 61.4 -12.4

2.72 36.0 4.00 46.9 48.8 10.9 6.26 57.2 62.3 -11.6

2.72 36.8 4.83 47.1 51.0 10.2 6.48 57.0 63.0 -10.9

2.72 37.6 5.77 47.2 53.0 9.6 6.65 56.8 63.8 -10.3

2.72 38.3 6.75 47.4 54.6 9.1 6.79 56.4 64.4 -9.7 Vgg Gp ID(RF) ηadd ηD I.R.L.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB)

2.72 19.3 0.09 32.2 1.6 12.9 1.04 12.0 12.7 -30.8

2.72 20.3 0.11 33.1 2.0 12.8 1.15 13.5 14.2 -29.8

2.72 21.3 0.13 34.2 2.6 12.9 1.26 15.8 16.6 -28.8

2.72 22.3 0.17 35.2 3.3 12.9 1.41 17.6 18.6 -27.8

2.72 23.3 0.21 36.2 4.2 13.0 1.58 20.3 21.3 -26.7

2.72 24.3 0.27 37.3 5.4 13.0 1.76 23.2 24.4 -25.7

2.72 25.3 0.34 38.3 6.8 13.1 1.96 26.4 27.8 -24.8

2.72 26.3 0.42 39.4 8.7 13.1 2.21 29.9 31.4 -24.1

2.72 27.3 0.53 40.4 11.0 13.1 2.49 33.6 35.4 -23.5

2.72 28.3 0.67 41.4 14.0 13.2 2.80 38.0 39.9 -23.0

2.72 29.3 0.85 42.5 17.6 13.2 3.16 42.4 44.6 -22.9

2.72 30.3 1.07 43.4 22.0 13.1 3.56 47.0 49.5 -23.5

2.72 31.3 1.35 44.3 26.9 13.0 3.99 51.2 53.9 -25.2

2.72 32.3 1.71 45.0 31.8 12.7 4.40 54.7 57.8 -27.3

2.72 33.4 2.17 45.6 36.2 12.2 4.79 56.9 60.5 -23.6

2.72 34.4 2.75 46.0 39.9 11.6 5.11 58.2 62.5 -18.6

2.72 35.4 3.47 46.3 42.9 10.9 5.39 58.6 63.7 -15.0

2.72 36.4 4.39 46.6 45.3 10.1 5.61 58.4 64.6 -12.5

2.72 37.4 5.49 46.7 47.2 9.3 5.80 57.6 65.2 -10.7

2.72 38.3 6.80 46.9 48.9 8.6 5.96 56.4 65.5 -9.4

2.72 39.2 8.33 47.0 50.3 7.8 6.11 54.9 65.8 -8.4

Pin Pout

Application Note for Silicon RF Power Semiconductors

13/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

6-3. Drain Quiescent Current vs.

OUTPUT POWER and DRAIN EFFICIENCY

Pin=3W Ta=+25deg.C,Vds=12.5V

490MHz

- AN-UHF-112-

Pin=3W Ta=+25deg.C,Vds=12.5V

530MHz

450MHz 530MHz

490MHz450MHz

Pout , OUTPUT POWER(W)

200 400 600 800 1000 1200 1400

Idq, DRAIN QUIESCENT CURRENT(mA)

ηD, DRAIN EFFICIENCY (%)

200 400 600 800 1000 1200 1400

IDQ, DRAIN QUIESCENT CURRENT(mA)

Ta=+25deg. C., Vds=12.5V, Pin=3.0W

450MHz Vgg Idq Idd ηD ηadd Gain I.R.L.

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 288 34.8 3.0 46.1 41.0 5.35 60.2 55.7 11.3 -5.9

2.65 350 34.8 3.0 46.2 41.2 5.38 60.2 55.8 11.3 -6.0

2.67 425 34.8 3.0 46.2 41.5 5.43 60.1 55.7 11.4 -6.0

2.70 500 34.8 3.0 46.2 41.9 5.46 60.2 55.8 11.4 -6.0

2.73 588 34.8 3.0 46.3 42.2 5.50 60.2 55.9 11.4 -6.0

2.75 675 34.8 3.0 46.3 42.5 5.54 60.2 55.9 11.4 -6.0

2.78 775 34.8 3.0 46.3 42.8 5.58 60.2 56.0 11.5 -6.0

2.80 888 34.8 3.0 46.3 43.1 5.63 60.1 55.9 11.5 -6.0

2.83 1013 34.8 3.0 46.4 43.4 5.66 60.1 55.9 11.6 -6.0

2.85 1138 34.8 3.0 46.4 43.7 5.70 60.1 55.9 11.6 -6.0

2.87 1250 34.8 3.0 46.4 43.9 5.74 60.0 55.9 11.6 -6.0

490MHz Vgg Idq Idd ηD ηadd Gain I.R.L.

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 275 34.8 3.0 46.3 42.7 5.55 60.3 56.1 11.5 -12.7

2.65 338 34.8 3.0 46.3 42.9 5.59 60.2 56.0 11.5 -12.7

2.67 413 34.8 3.0 46.3 43.1 5.63 60.1 55.9 11.5 -12.7

2.70 488 34.8 3.0 46.4 43.5 5.66 60.2 56.0 11.6 -12.7

2.73 575 34.8 3.0 46.4 43.7 5.70 60.1 56.0 11.6 -12.7

2.75 663 34.8 3.0 46.4 43.9 5.74 60.0 55.9 11.6 -12.8

2.78 775 34.8 3.0 46.4 44.1 5.78 59.9 55.8 11.6 -12.8

2.80 875 34.8 3.0 46.5 44.4 5.81 59.9 55.8 11.7 -12.8

2.83 1000 34.8 3.0 46.5 44.6 5.85 59.8 55.8 11.7 -12.8

2.85 1125 34.8 3.0 46.5 44.9 5.90 59.7 55.7 11.7 -12.8

2.87 1238 34.8 3.0 46.5 45.1 5.93 59.8 55.7 11.7 -12.8

530MHz Vgg Idq Idd ηD ηadd Gain I.R.L.

(V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.62 275 34.8 3.0 46.1 40.4 5.05 62.7 58.0 11.2 -15.3

2.65 338 34.8 3.0 46.1 40.5 5.08 62.6 57.9 11.3 -15.3

2.67 413 34.8 3.0 46.1 40.6 5.11 62.4 57.7 11.3 -15.3

2.70 488 34.8 3.0 46.1 40.8 5.15 62.2 57.6 11.3 -15.3

2.73 575 34.8 3.0 46.1 41.0 5.18 62.2 57.6 11.3 -15.3

2.75 663 34.8 3.0 46.1 41.1 5.20 62.1 57.5 11.3 -15.3

2.78 763 34.8 3.0 46.2 41.3 5.24 61.9 57.3 11.3 -15.3

2.80 875 34.8 3.0 46.2 41.5 5.26 61.9 57.4 11.4 -15.3

2.83 1000 34.8 3.0 46.2 41.7 5.30 61.7 57.2 11.4 -15.2

2.85 1125 34.8 3.0 46.2 41.9 5.33 61.7 57.3 11.4 -15.2

2.87 1238 34.8 3.0 46.2 42.0 5.35 61.6 57.1 11.4 -15.2

Pin Pout

Application Note for Silicon RF Power Semiconductors

14/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

6-4. DC Power Supply vs.

Pin=3W Ta=+25deg.C, Vgg fixedat Idq=0.5A Vds=12.5V

- AN-UHF-112-

OUTPUT POWER and DRAIN EFFICIENCY

Pin=3W Ta=+25deg.C, Vgg fixedat Idq=0.5A Vds=12.5V

Pout , OUTPUT POWER(W)

10 11 12 13 14 15

490MHz

450MHz

VDD, SUPPLY VOLTAGE(V)

DRAIN CURRENT

Pin=3W Ta=+25deg.C, Vgg fixedatIdq=0.5A Vds=12.5V

530MHz

450MHz

490MHz

ηD, DRAIN EFFICIENCY(%)

10 11 12 13 14 15

VDD, SUPPLY VOLTAGE(V)

530MHz

490MHz

Idd, DRAIN CURRENT(A)

10 11 12 13 14 15

VDD, SUPPLY VOLTAGE(V)

450MHz

530MHz

Application Note for Silicon RF Power Semiconductors

15/16

RD35HUF2 single-stage amplifier with f=450-to-530MHz evaluation board

- AN-UHF-112-

Ta=+25deg. C., Pin=3.0W

450MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.71 10.99 488 34.8 3.0 45.3 34.2 5.05 61.9 56.4 10.5 -5.6

2.71 11.5 500 34.8 3.0 45.6 36.5 5.19 61.4 56.3 10.8 -5.7

2.71 11.99 513 34.8 3.0 45.9 38.6 5.32 60.9 56.1 11.0 -5.8

2.71 12.49 525 34.8 3.0 46.1 40.7 5.44 60.2 55.7 11.3 -5.9

2.71 13 538 34.8 3.0 46.3 42.9 5.55 59.6 55.4 11.5 -6.0

2.71 13.49 550 34.8 3.0 46.5 45.0 5.67 59.1 55.1 11.7 -6.1

2.71 13.99 563 34.8 3.0 46.7 47.0 5.77 58.5 54.7 11.9 -6.2

2.71 14.5 575 34.8 3.0 46.9 49.1 5.87 58.0 54.4 12.1 -6.2

Pin Pout

490MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.71 10.99 488 34.8 3.0 45.4 34.8 5.23 60.9 55.6 10.6 -11.4

2.71 11.5 513 34.8 3.0 45.7 37.2 5.38 60.5 55.6 10.9 -11.9

2.71 11.99 525 34.8 3.0 46.0 39.5 5.52 60.0 55.4 11.2 -12.2

2.71 12.49 538 34.8 3.0 46.2 41.9 5.64 59.7 55.4 11.4 -12.5

2.71 13 538 34.8 3.0 46.5 44.3 5.77 59.3 55.3 11.7 -12.8

2.71 13.49 550 34.8 3.0 46.7 46.5 5.88 58.8 55.0 11.9 -13.1

2.71 13.99 563 34.8 3.0 46.9 48.6 5.99 58.3 54.7 12.1 -13.3

2.71 14.5 575 34.8 3.0 47.1 50.8 6.09 57.8 54.3 12.3 -13.5

530MHz Vgg Vdd Idq Idd ηD ηadd Gain I.R.L.

(V) (V) (mA) (dBm) (W) (dBm) (W) (A) (%) (%) (dB) (dB)

2.71 10.99 475 34.8 3.0 45.1 32.3 4.69 62.9 57.0 10.3 -12.5

2.71 11.5 500 34.8 3.0 45.4 34.8 4.84 62.7 57.3 10.6 -13.6

2.71 11.99 513 34.8 3.0 45.7 37.2 4.98 62.5 57.4 10.9 -14.7

2.71 12.49 525 34.8 3.0 46.0 39.5 5.11 62.2 57.4 11.2 -16.0

2.71 13 538 34.8 3.0 46.2 42.0 5.25 61.7 57.3 11.4 -17.5

2.71 13.49 538 34.8 3.0 46.5 44.3 5.36 61.4 57.2 11.7 -19.2

2.71 13.99 550 34.8 3.0 46.7 46.5 5.48 60.9 56.9 11.9 -21.2

2.71 14.5 563 34.8 3.0 46.9 48.6 5.59 60.3 56.5 12.1 -23.8

Pin Pout

Application Note for Silicon RF Power Semiconductors

16/16

MITSUBISHI AN-UHF-112 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual