MITSUBISHI AN-UHF-108-A User Manual

APPLICATION NOTE

SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

SUMMARY:

This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs.

Pout characteristics, Pout vs. Vdd characteristics and Pout vs. Idq characteristics) at f=400 to

470MHz.

Silicon RF Power Semiconductors

Document NO. AN-UHF-108-A
Date : 3
Rev. Date :22
Prepared : H.Ukita, K.Osaki

Confirmed : S.Kametani

(Taking charge of Silicon RF by

th

Jun. 2010

th

Jun. 2010

Y.Tanaka

MIYOSHI Electronics)

- Sample history:

RD02MUS1B: Lot number “093AF-G”

- Evaluate conditions:

@f=400MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

@f=435MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

@f=470MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

- Results:

Page 2-4 shows the Output Power, Drain Efficiency vs. Frequency data.

Page 5-7 shows the Output Power, Power Gain, Drain Efficiency vs. Input Power data.

Page 8-10 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Voltage data.

Page 11-13 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current data.

Page 14 shows the Input / Output Impedance vs. Frequency characteristics

Page 15 shows the Equivalent Circuit and schematic for test fixture.

Application Note for Silicon RF Power Semiconductors

1/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

ηd

2.5

Pin=50mW
Vdd=7.2V
Idq=0.2A

2.0

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 2.88 32.2 1.64 15.2 0.54 42.1 40.8 -4.4 -24.8 <-55
390 2.88 32.8 1.92 15.8 0.55 48.0 46.8 -6.2 -26.4 <-55
400 2.88 33.2 2.11 16.2 0.55 52.9 51.7 -8.9 -27.7 <-55
410 2.88 33.4 2.18 16.4 0.54 56.2 54.9 -13.0 -28.6 <-55
420 2.88 33.4 2.17 16.4 0.52 58.0 56.6 -16.1 -29.6 <-55
430 2.88 33.2 2.11 16.2 0.50 58.6 57.2 -13.6 -32.7 <-55
440 2.88 33.1 2.03 16.1 0.48 58.6 57.1 -10.6 -39.3 <-55
450 2.88 32.9 1.93 15.9 0.47 57.7 56.2 -8.7 -47.1 <-55
460 2.88 32.7 1.84 15.7 0.45 56.5 55.0 -7.6 <-55 <-55
470 2.88 32.5 1.76 15.5 0.45 55.0 53.4 -7.0 <-55 <-55
480 2.88 32.3 1.68 15.3 0.44 52.9 51.4 -6.7 <-55 <-55
490 2.88 32.1 1.61 15.1 0.44 50.9 49.3 -6.5 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

2/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.3A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

Pin=50mW
Vdd=7.2V

2.5

Idq=0.3A

2.0

ηd

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 3.07 33.0 1.99 16.0 0.61 45.5 44.4 -4.9 -26.2 <-55
390 3.07 33.5 2.24 16.5 0.61 51.0 49.8 -6.9 -27.3 <-55
400 3.07 33.8 2.38 16.8 0.60 55.2 54.1 -10.0 -28.3 <-55
410 3.07 33.8 2.41 16.8 0.58 57.9 56.7 -14.5 -29.1 <-55
420 3.07 33.7 2.37 16.8 0.55 59.4 58.1 -16.1 -30.0 <-55
430 3.07 33.6 2.28 16.6 0.53 59.7 58.4 -12.5 -33.0 <-55
440 3.07 33.4 2.19 16.4 0.51 59.5 58.1 -9.6 -39.6 <-55
450 3.07 33.2 2.10 16.2 0.50 58.6 57.2 -7.9 -47.4 <-55
460 3.07 33.0 2.01 16.0 0.49 57.2 55.8 -6.9 <-55 <-55
470 3.07 32.8 1.92 15.8 0.48 55.4 54.0 -6.5 <-55 <-55
480 3.07 32.7 1.84 15.7 0.48 53.4 51.9 -6.1 <-55 <-55
490 3.07 32.5 1.77 15.5 0.48 51.2 49.8 -6.0 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

3/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.4A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

Pin=50mW
Vdd=7.2V

2.5

Idq=0.4A

2.0

ηd

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 3.21 33.5 2.25 16.5 0.66 47.6 46.6 -5.3 -27.0 <-55
390 3.21 33.9 2.46 16.9 0.65 52.7 51.6 -7.5 -27.8 <-55
400 3.21 34.1 2.56 17.1 0.63 56.5 55.4 -11.0 -28.6 <-55
410 3.21 34.1 2.56 17.1 0.60 58.9 57.7 -15.9 -29.3 <-55
420 3.21 34.0 2.50 17.0 0.58 60.1 58.9 -15.6 -30.1 <-55
430 3.21 33.8 2.40 16.8 0.55 60.1 58.9 -11.5 -33.1 <-55
440 3.21 33.6 2.30 16.6 0.54 59.7 58.4 -8.9 -39.7 <-55
450 3.21 33.4 2.21 16.4 0.52 58.6 57.2 -7.3 -47.3 <-55
460 3.21 33.3 2.12 16.3 0.52 57.1 55.7 -6.5 <-55 <-55
470 3.21 33.1 2.04 16.1 0.51 55.2 53.9 -6.0 <-55 <-55
480 3.21 32.9 1.96 15.9 0.51 53.0 51.7 -5.8 <-55 <-55
490 3.21 32.8 1.89 15.8 0.52 50.7 49.4 -5.7 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

4/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power

(@ f=400MHz, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

Output Power Po(dBm) ,

Power Gain GP(dB)

40

35

30

25

20

15

10

f=400MHz
Vdd=7.2V
Idq=0.2A

Po

GP

ηd

70

60

50

40

30

20

10

Drain Efficiency ηd (%)

0 5 10 15 20

Input Power Pin(dBm)

Vgg Pin Pin Gp Idd ηd P.A.E.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.88 0.0 0.001 20.1 0.10 20.1 0.22 6.5 6.5 -9.4 -36.1 <-55

2.88 1.0 0.001 21.0 0.13 20.0 0.22 8.0 7.9 -9.3 -35.3 <-55

2.88 2.0 0.002 21.9 0.16 19.9 0.23 9.6 9.5 -9.2 -34.2 <-55

2.88 3.0 0.002 22.8 0.19 19.8 0.23 11.4 11.3 -9.0 -33.6 <-55

2.88 4.0 0.003 23.7 0.23 19.7 0.24 13.4 13.2 -8.9 -32.2 <-55

2.88 5.0 0.003 24.6 0.29 19.6 0.25 15.7 15.6 -8.8 -31.2 <-55

2.88 6.0 0.004 25.4 0.35 19.4 0.27 18.2 18.0 -8.6 -30.4 <-55

2.88 7.0 0.005 26.3 0.42 19.3 0.28 20.8 20.6 -8.5 -29.4 <-55

2.88 8.0 0.006 27.1 0.52 19.1 0.30 23.6 23.3 -8.4 -28.8 <-55

2.88 9.0 0.008 28.0 0.63 19.0 0.33 26.8 26.4 -8.3 -28.5 <-55

2.88 10.0 0.010 28.8 0.76 18.8 0.35 30.1 29.7 -8.3 -28.0 <-55

2.88 11.0 0.013 29.7 0.92 18.7 0.38 33.6 33.1 -8.4 -27.7 <-55

2.88 12.0 0.016 30.4 1.11 18.4 0.41 37.2 36.7 -8.5 -27.7 <-55

2.88 13.0 0.020 31.1 1.30 18.1 0.44 40.8 40.2 -8.7 -27.8 <-55

2.88 14.0 0.025 31.8 1.51 17.8 0.47 44.2 43.5 -8.8 -27.8 <-55

2.88 15.0 0.032 32.3 1.71 17.3 0.50 47.3 46.5 -8.8 -27.6 <-55

2.88 16.0 0.040 32.8 1.91 16.8 0.53 50.4 49.3 -8.9 -27.7 <-55

2.88 17.0 0.050 33.2 2.10 16.2 0.55 52.9 51.6 -8.9 -27.7 <-55

2.88 18.0 0.063 33.6 2.28 15.6 0.58 55.2 53.6 -8.9 -27.6 <-55

2.88 19.0 0.080 33.9 2.45 14.9 0.60 57.1 55.2 -9.0 -27.5 <-55

2.88 20.0 0.100 34.1 2.60 14.1 0.62 58.7 56.4 -9.0 -27.5 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

5/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power

(@ f=435MHz, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

40

f=435MHz
Vdd=7.2V
Idq=0.2A

35

30

Po

25

20

Power Gain GP(dB)

Output Power Po(dBm) ,

GP

15

ηd

10

70

60

50

40

30

Drain Efficiency ηd (%)

20

10

0 5 10 15 20

Input Power Pin(dBm)

Vgg Pin Pin Gp Idd ηd P.A.E.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.88 0.0 0.001 20.1 0.10 20.1 0.21 6.7 6.7 -10.2 <-55 <-55

2.88 1.0 0.001 21.1 0.13 20.1 0.22 8.3 8.2 -10.8 <-55 <-55

2.88 2.0 0.002 22.1 0.16 20.1 0.22 10.1 10.0 -10.3 -42.8 <-55

2.88 3.0 0.002 23.0 0.20 20.0 0.23 12.2 12.1 -10.3 -41.7 <-55

2.88 4.0 0.003 23.9 0.25 19.9 0.23 14.7 14.5 -10.4 -40.6 <-55

2.88 5.0 0.003 24.9 0.31 19.9 0.24 17.4 17.3 -10.5 -39.8 <-55

2.88 6.0 0.004 25.8 0.38 19.8 0.26 20.6 20.4 -10.5 -38.9 <-55

2.88 7.0 0.005 26.7 0.47 19.7 0.27 24.1 23.8 -10.6 -38.1 <-55

2.88 8.0 0.006 27.6 0.57 19.6 0.29 27.7 27.4 -10.7 -37.3 <-55

2.88 9.0 0.008 28.5 0.70 19.4 0.31 31.6 31.2 -10.7 -36.8 <-55

2.88 10.0 0.010 29.3 0.84 19.3 0.33 35.5 35.1 -10.6 -36.2 <-55

2.88 11.0 0.013 30.0 1.01 19.0 0.35 39.5 39.0 -10.5 -36.1 <-55

2.88 12.0 0.016 30.7 1.18 18.7 0.38 43.3 42.7 -10.4 -36.1 <-55

2.88 13.0 0.020 31.4 1.37 18.4 0.40 47.0 46.3 -10.5 -36.0 <-55

2.88 14.0 0.025 31.9 1.56 17.9 0.43 50.5 49.7 -10.7 -36.1 <-55

2.88 15.0 0.032 32.4 1.74 17.4 0.45 53.6 52.6 -11.0 -35.8 <-55

2.88 16.0 0.040 32.8 1.91 16.8 0.47 56.3 55.2 -11.4 -35.9 <-55

2.88 17.0 0.050 33.2 2.07 16.2 0.49 58.8 57.3 -11.9 -35.7 <-55

2.88 18.0 0.063 33.4 2.21 15.4 0.51 60.6 58.9 -12.5 -35.5 <-55

2.88 19.0 0.079 33.7 2.33 14.7 0.52 62.2 60.1 -13.1 -35.3 <-55

2.88 20.0 0.100 33.9 2.44 13.9 0.53 63.6 61.0 -13.6 -35.2 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

6/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power

(@ f=470MHz, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

40

f=470MHz
Vdd=7.2V
Idq=0.2A

35

30

25

Po

20

Power Gain GP(dB)

Output Power Po(dBm) ,

15

GP

ηd

10

70

60

50

40

30

Drain Efficiency ηd (%)

20

10

0 5 10 15 20

Input Power Pin(dBm)

Vgg Pin Pin Gp Idd ηd P.A.E.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.88 0.0 0.001 18.3 0.07 18.3 0.21 4.6 4.5 -6.6 <-55 <-55

2.88 1.0 0.001 19.3 0.09 18.3 0.21 5.6 5.6 -6.6 <-55 <-55

2.88 2.0 0.002 20.3 0.11 18.3 0.21 7.0 6.9 -6.6 <-55 <-55

2.88 3.0 0.002 21.3 0.13 18.3 0.22 8.6 8.5 -6.6 <-55 <-55

2.88 4.0 0.003 22.3 0.17 18.2 0.22 10.5 10.4 -6.7 <-55 <-55

2.88 5.0 0.003 23.2 0.21 18.2 0.23 12.8 12.6 -6.7 <-55 <-55

2.88 6.0 0.004 24.1 0.26 18.1 0.24 15.3 15.1 -6.6 <-55 <-55

2.88 7.0 0.005 25.1 0.32 18.1 0.24 18.4 18.1 -6.6 <-55 <-55

2.88 8.0 0.006 26.0 0.40 18.0 0.26 21.8 21.4 -6.7 <-55 <-55

2.88 9.0 0.008 26.9 0.49 17.9 0.27 25.4 25.0 -6.7 <-55 <-55

2.88 10.0 0.010 27.8 0.61 17.8 0.29 29.4 29.0 -6.8 <-55 <-55

2.88 11.0 0.013 28.7 0.74 17.7 0.31 33.5 32.9 -6.7 <-55 <-55

2.88 12.0 0.016 29.5 0.89 17.5 0.33 37.5 36.8 -6.7 <-55 <-55

2.88 13.0 0.020 30.2 1.05 17.2 0.35 41.5 40.7 -6.7 <-55 <-55

2.88 14.0 0.025 30.9 1.23 16.9 0.38 45.2 44.3 -6.7 <-55 <-55

2.88 15.0 0.032 31.5 1.41 16.5 0.40 48.8 47.7 -6.7 <-55 <-55

2.88 16.0 0.040 32.0 1.59 16.0 0.42 52.2 50.9 -6.8 <-55 <-55

2.88 17.0 0.050 32.5 1.76 15.5 0.45 55.0 53.4 -7.0 <-55 <-55

2.88 18.0 0.063 32.8 1.92 14.8 0.47 57.4 55.5 -7.2 <-55 <-55

2.88 19.0 0.080 33.2 2.07 14.1 0.48 59.5 57.2 -7.5 <-55 <-55

2.88 20.0 0.100 33.4 2.19 13.4 0.50 61.1 58.3 -7.7 <-55 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

7/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

)

s

r

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage

(@ f=400MHz, Pin=50mW, Idq=0.2A)

- AN-UHF-108-A-

7

80

f=400MHz , Pin=50mW
Idq=0.2A

6

5

4

ηd

3

Drain Current Idd(A)

Output Power Po(W) ,

2

Po

70

60

50

40

30

Drain Efficiency ηd(%

Idd

1

0

20

10

135791113

Drain Voltage Vdd(V)

Vdd Vgg Idd ηd P.A.E.

(V) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

1.0 2.88 17.2 0.05 0.09 59.4 4.3 -9.8 -30.3 <-55

1.5 2.8820.8 0.120.1361.136.0-10.0-30.2<-55

2.0 2.8823.4 0.220.1862.348.0-10.1-29.8<-55

2.5 2.8825.4 0.340.2262.353.3-10.1-29.6<-55

3.0 2.8826.9 0.490.2762.255.8-10.0-29.4<-55

3.5 2.88 28.2 0.66 0.31 61.8 57.2 -9.9 -29.5 <-55

4.0 2.88 29.3 0.86 0.35 61.4 57.8 -9.8 -28.8 <-55

4.5 2.88 30.2 1.06 0.39 60.4 57.6 -9.7 -28.8 <-55

5.0 2.88 31.0 1.27 0.43 59.5 57.1 -9.5 -28.7 <-55

5.5 2.88 31.7 1.48 0.46 58.3 56.3 -9.4 -28.5 <-55

6.0 2.88 32.2 1.68 0.49 56.9 55.2 -9.3 -28.3 <-55

6.5 2.88 32.7 1.87 0.52 55.3 53.8 -9.1 -28.0 <-55

7.0 2.88 33.1 2.05 0.55 53.8 52.4 -9.0 -27.7 <-55

7.5 2.88 33.4 2.21 0.57 52.0 50.8 -8.8 -27.5 <-55

8.0 2.88 33.7 2.35 0.59 50.2 49.2 -8.7 -27.1 <-55

8.5 2.88 33.9 2.47 0.60 48.3 47.3 -8.6 -26.9 <-55

9.0 2.88 34.1 2.57 0.62 46.4 45.5 -8.5 -26.5 <-55

9.5 2.88 34.2 2.65 0.63 44.6 43.7 -8.4 -26.3 <-55

10.0 2.88 34.3 2.72 0.64 42.7 41.9 -8.3 -26.1 <-55

10.5 2.88 34.4 2.77 0.65 40.9 40.2 -8.2 -25.9 <-55

11.0 2.88 34.5 2.80 0.65 39.1 38.4 -8.1 -25.6 <-55

11.5 2.88 34.5 2.82 0.66 37.4 36.7 -8.0 -25.5 <-55

12.0 2.88 34.5 2.83 0.66 35.8 35.1 -8.0 -25.3 <-55

12.5 2.88 34.5 2.83 0.66 34.2 33.6 -7.9 -25.0 <-55

13.0 2.88 34.5 2.82 0.66 32.7 32.1 -7.9 -24.8 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

8/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

)

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage

(@ f=435MHz, Pin=50mW, Idq=0.2A)

- AN-UHF-108-A-

7

80

f=435MHz , Pin=50mW
Idq=0.2A

6

5

4

ηd

3

Drain Current Idd(A)

2

Output Power Po(W) ,

Po

70

60

50

40

30

Drain Efficiency ηd(%

Idd

1

0

20

10

135791113

Drain Voltage Vdd(V)

Vdd Vgg Idd ηd P.A.E.

(V) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

1.0 2.88 16.8 0.05 0.09 55.7 -1.6 -17.4 -35.7 <-55

1.5 2.8820.4 0.110.1259.932.4-16.3-36.4<-55

2.0 2.8822.9 0.190.1661.845.7-15.3-36.6<-55

2.5 2.8824.8 0.300.1962.952.5-14.6-36.8<-55

3.0 2.8826.4 0.430.2363.356.0-14.0-36.9<-55

3.5 2.8827.7 0.580.2663.457.9-13.5-36.5<-55

4.0 2.8828.8 0.760.3063.559.3-13.1-36.5<-55

4.5 2.8829.7 0.940.3363.159.7-12.7-36.3<-55

5.0 2.8830.6 1.140.3762.759.9-12.5-36.4<-55

5.5 2.8831.3 1.360.4062.159.8-12.3-36.1<-55

6.0 2.8831.9 1.570.4361.259.3-12.1-35.9<-55

6.5 2.8832.5 1.780.4660.358.6-12.0-35.8<-55

7.0 2.8833.0 2.000.4859.357.8-12.0-35.7<-55

7.5 2.8833.4 2.200.5158.156.8-11.9-35.5<-55

8.0 2.8833.8 2.400.5356.955.7-11.9-35.4<-55

8.5 2.8834.1 2.590.5555.654.5-11.9-35.2<-55

9.0 2.8834.4 2.750.5754.153.2-12.0-35.0<-55

9.5 2.8834.6 2.910.5852.751.8-12.0-34.8<-55

10.0 2.88 34.8 3.05 0.60 51.2 50.3 -12.1 -34.3 <-55

10.5 2.88 35.0 3.18 0.61 49.6 48.9 -12.2 -34.1 <-55

11.0 2.88 35.2 3.28 0.62 48.1 47.4 -12.4 -33.8 <-55

11.5 2.88 35.3 3.37 0.63 46.5 45.8 -12.5 -33.4 <-55

12.0 2.88 35.4 3.45 0.64 45.0 44.3 -12.6 -33.4 <-55

12.5 2.88 35.4 3.50 0.65 43.4 42.8 -12.8 -33.0 <-55

13.0 2.88 35.5 3.55 0.65 41.9 41.3 -13.0 -32.8 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

9/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

)

s

r

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage

(@ f=470MHz, Pin=50mW, Idq=0.2A)

- AN-UHF-108-A-

7

80

f=470MHz , Pin=50mW
Idq=0.2A

6

5

4

ηd

3

Drain Current Idd(A)

Output Power Po(W) ,

2

Po

70

60

50

40

30

Drain Efficiency ηd(%

Idd

1

0

20

10

135791113

Drain Voltage Vdd(V)

Vdd Vgg Idd ηd P.A.E.

(V) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

1.0 2.88 16.6 0.05 0.09 50.9 -4.0 -8.9 <-55 <-55

1.5 2.8820.1 0.100.1355.128.4 -8.6<-55<-55

2.0 2.8822.6 0.180.1657.541.7 -8.2<-55<-55

2.5 2.8824.5 0.280.1958.848.4 -8.0<-55<-55

3.0 2.8826.0 0.400.2359.652.2 -7.7<-55<-55

3.5 2.8827.3 0.540.2659.954.2 -7.5<-55<-55

4.0 2.8828.4 0.690.2959.955.5 -7.4<-55<-55

4.5 2.8829.3 0.850.3259.656.1 -7.3<-55<-55

5.0 2.8830.1 1.010.3459.256.3 -7.2<-55<-55

5.5 2.8830.8 1.190.3758.556.0 -7.1<-55<-55

6.0 2.8831.3 1.360.3957.855.6 -7.0<-55<-55

6.5 2.8831.9 1.530.4256.754.8 -7.0<-55<-55

7.0 2.8832.3 1.700.4455.553.9 -7.0<-55<-55

7.5 2.8832.7 1.860.4654.352.8 -7.0<-55<-55

8.0 2.8833.0 2.020.4853.251.8 -7.1<-55<-55

8.5 2.8833.3 2.160.4951.850.6 -7.1<-55<-55

9.0 2.8833.6 2.290.5150.449.3 -7.1<-55<-55

9.5 2.8833.8 2.400.5248.947.9 -7.2<-55<-55

10.0 2.88 34.0 2.51 0.53 47.5 46.5 -7.3 <-55 <-55

10.5 2.88 34.2 2.60 0.54 46.0 45.1 -7.3 <-55 <-55

11.0 2.88 34.3 2.68 0.55 44.6 43.7 -7.4 <-55 <-55

11.5 2.88 34.4 2.75 0.56 43.1 42.4 -7.5 <-55 <-55

12.0 2.88 34.5 2.81 0.56 41.7 41.0 -7.6 <-55 <-55

12.5 2.88 34.6 2.86 0.57 40.4 39.7 -7.7 <-55 <-55

13.0 2.88 34.6 2.89 0.57 39.0 38.3 -7.8 <-55 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

10/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

)

s

r

- AN-UHF-108-A-

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current

(@ f=400MHz, Pin=50mW, Vdd=7.2V)

6

f=400MHz ,Pin=50mW

70

Vdd=7.2V

5

4

60

50

ηd

3

40

Po

2

Drain Current Idd(A)

Output Power Po(W) ,

30

Drain Efficiency ηd(%

Ids

1

0

20

10

0.00.20.40.6

Drain Quiet Current Idq(A)

Idq VGG Idd ηd P.A.E.
(A) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

0.00 1.5 22.5 0.18 0.13 19.4 14.1 -4.5 -16.4 <-55

0.00 1.6 24.0 0.25 0.15 22.4 18.0 -4.7 -17.0 <-55

0.00 1.7 25.2 0.33 0.18 25.3 21.5 -4.9 -17.9 <-55

0.00 1.8 26.3 0.42 0.21 28.0 24.7 -5.1 -18.6 <-55

0.00 1.9 27.3 0.53 0.24 30.7 27.8 -5.3 -19.7 <-55

0.01 2.0 28.2 0.66 0.28 33.5 31.0 -5.6 -20.6 <-55

0.01 2.1 29.1 0.81 0.31 36.2 33.9 -5.8 -21.4 <-55

0.02 2.2 29.8 0.95 0.34 38.7 36.7 -6.1 -22.4 <-55

0.03 2.3 30.5 1.11 0.38 41.2 39.4 -6.4 -23.4 <-55

0.04 2.4 31.1 1.28 0.41 43.7 42.0 -6.8 -24.2 <-55

0.06 2.5 31.6 1.45 0.44 45.8 44.2 -7.2 -25.0 <-55

0.09 2.6 32.1 1.62 0.47 48.0 46.5 -7.6 -25.9 <-55

0.12 2.7 32.5 1.80 0.50 49.8 48.4 -8.0 -26.6 <-55

0.16 2.8 32.9 1.97 0.53 51.5 50.2 -8.5 -27.2 <-55

0.20 2.9 33.3 2.12 0.56 53.0 51.8 -9.0 -27.7 <-55

0.26 3.0 33.6 2.28 0.58 54.4 53.2 -9.6 -28.1 <-55

0.32 3.1 33.8 2.42 0.61 55.6 54.4 -10.2 -28.4 <-55

0.38 3.2 34.1 2.55 0.63 56.5 55.4 -10.8 -28.5 <-55

0.45 3.3 34.3 2.66 0.65 57.3 56.2 -11.5 -28.7 <-55

0.52 3.4 34.4 2.77 0.66 57.9 56.8 -12.3 -28.7 <-55

0.60 3.5 34.6 2.86 0.68 58.3 57.2 -13.2 -28.5 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

11/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

- AN-UHF-108-A-

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current

(@ f=435MHz, Pin=50mW, Vdd=7.2V)

6

f=435MHz ,Pin=50mW

70

Vdd=7.2V

5

4

60

50

ηd

3

40

Po

Output Power Po(W) ,

2

Drain Current Idd(A)

30

Drain Efficiency ηd(%)

Ids

1

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

Drain Quiet Current Idq(A)

20

10

Idq VGG Idd ηd P.A.E.
(A) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

0.00 1.5 26.5 0.45 0.19 33.3 29.8 -13.2 -27.0 <-55

0.00 1.6 27.4 0.55 0.21 36.2 33.0 -13.6 -27.6 <-55

0.00 1.7 28.1 0.65 0.23 38.7 35.8 -14.0 -28.3 <-55

0.00 1.8 28.8 0.75 0.26 41.0 38.4 -14.3 -29.0 <-55

0.00 1.9 29.4 0.87 0.28 43.3 40.8 -14.5 -29.5 <-55

0.01 2.0 30.0 0.99 0.30 45.4 43.2 -14.7 -30.4 <-55

0.01 2.1 30.5 1.12 0.33 47.6 45.5 -14.8 -31.1 <-55

0.02 2.2 30.9 1.24 0.35 49.6 47.6 -14.7 -31.9 <-55

0.03 2.3 31.4 1.37 0.37 51.4 49.5 -14.5 -32.5 <-55

0.04 2.4 31.8 1.50 0.39 52.9 51.2 -14.3 -33.2 <-55

0.06 2.5 32.1 1.62 0.41 54.4 52.8 -13.9 -33.8 <-55

0.09 2.6 32.4 1.75 0.44 55.7 54.1 -13.5 -34.5 <-55

0.12 2.7 32.7 1.86 0.46 56.9 55.4 -12.9 -34.9 <-55

0.16 2.8 33.0 1.98 0.47 57.9 56.5 -12.4 -35.4 <-55

0.20 2.9 33.2 2.08 0.49 58.7 57.3 -11.8 -35.6 <-55

0.26 3.0 33.4 2.18 0.51 59.4 58.0 -11.3 -35.9 <-55

0.32 3.1 33.6 2.27 0.53 59.8 58.5 -10.7 -36.0 <-55

0.38 3.2 33.7 2.34 0.54 60.2 58.9 -10.1 -35.9 <-55

0.45 3.3 33.8 2.42 0.56 60.3 59.0 -9.6 -36.0 <-55

0.52 3.4 34.0 2.49 0.57 60.2 59.0 -9.1 -36.0 <-55

0.60 3.5 34.1 2.54 0.59 59.9 58.7 -8.6 -35.8 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

12/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

- AN-UHF-108-A-

RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current

(@ f=470MHz, Pin=50mW, Vdd=7.2V)

6

f=470MHz ,Pin=50mW

70

Vdd=7.2V

5

4

60

50

ηd

3

40

Po

Output Power Po(W) ,

2

Drain Current Idd(A)

30

Drain Efficiency ηd(%)

Ids

1

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

Drain Quiet Current Idq(A)

20

10

Idq VGG Idd ηd P.A.E.
(A) (V) (dBm) (W) (A) (%) (%) (dB) (dBc) (dBc)

0.00 1.5 25.7 0.37 0.16 31.6 27.6 -12.0 <-55 <-55

0.00 1.6 26.6 0.46 0.19 34.6 31.0 -11.7 <-55 <-55

0.00 1.7 27.4 0.55 0.21 37.1 33.8 -11.3 <-55 <-55

0.00 1.8 28.0 0.63 0.22 39.3 36.3 -10.9 <-55 <-55

0.00 1.9 28.6 0.73 0.25 41.4 38.6 -10.5 <-55 <-55

0.01 2.0 29.2 0.83 0.27 43.5 40.9 -10.1 <-55 <-55

0.01 2.1 29.7 0.93 0.29 45.3 42.9 -9.8 <-55 <-55

0.02 2.2 30.2 1.04 0.31 47.2 45.0 -9.4 <-55 <-55

0.03 2.3 30.6 1.14 0.33 48.6 46.5 -9.0 <-55 <-55

0.04 2.4 31.0 1.25 0.35 50.2 48.2 -8.7 <-55 <-55

0.06 2.5 31.3 1.36 0.37 51.4 49.5 -8.3 <-55 <-55

0.09 2.6 31.7 1.47 0.39 52.6 50.8 -8.0 <-55 <-55

0.12 2.7 32.0 1.57 0.41 53.6 51.9 -7.6 <-55 <-55

0.16 2.8 32.2 1.67 0.43 54.3 52.7 -7.3 <-55 <-55

0.20 2.9 32.5 1.77 0.45 54.9 53.4 -7.0 <-55 <-55

0.26 3.0 32.7 1.86 0.47 55.4 53.9 -6.7 <-55 <-55

0.32 3.1 32.9 1.95 0.49 55.5 54.1 -6.4 <-55 <-55

0.38 3.2 33.1 2.03 0.51 55.5 54.2 -6.1 <-55 <-55

0.45 3.3 33.2 2.11 0.53 55.1 53.8 -5.8 <-55 <-55

0.52 3.4 33.4 2.18 0.56 54.1 52.9 -5.6 <-55 <-55

0.60 3.5 33.5 2.23 0.59 52.5 51.3 -5.4 <-55 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

13/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

- AN-UHF-108-A-

RD02MUS1B Input / Output Impedance vs. Frequency characteristics

Zout* (f=400,435,470MHz)

f(MHz) Zout*(ohm)

400 5.82+j6.03
435 6.68+j6.85

Zout* : Complex conjugate of

Output impedance.

470 7.02+j6.58

----------------------------------------------------------------------------------------------------------------------------------------------

Zin* (f=400,435,470MHz)

f(MHz) Zin*(ohm)

400 4.16+j9.09
435 4.55+j10.54
470 4.95+j11.66

Zin* : Complex conjugate of

Iutput impedance.

Application Note for Silicon RF Power Semiconductors

14/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

g

- AN-UHF-108-A-

RD02MUS1B Equivalent Circuit (@f=400-470MHz)

W

W

Note:Board material – Glass-Epoxy Substrate. Microstrip line width=1.3mm/50 OHM,er:4.8,t=0.8mm. W:Line width=1.0mm.

Parts Type Value Type name Vender

Capacitor

Resistance

C1 300pF GRM1882C1H301JA01D Murata Manufacturing Co.,Ltd.
C2 9pF GRM1882C1H9R0DZ01D Murata Manufacturing Co.,Ltd.
C3 18pF GRM1882C1H180JA01D Murata Manufacturing Co.,Ltd.
C4 47pF GRM1882C1H470JA01D Murata Manufacturing Co.,Ltd.
C5 47pF GRM1882C1H470JA01D Murata Manufacturing Co.,Ltd.
C6 33pF GRM1882C1H330JA01D Murata Manufacturing Co.,Ltd.
C7 12pF GRM1882C1H120DZ01D Murata Manufacturing Co.,Ltd.
C8 10pF GRM1882C1H100JA01D Murata Manufacturing Co.,Ltd.

C9 100pF GRM1882C1H101JA01D Murata Manufacturing Co.,Ltd.
C10 22000pF GRM216R11H223KA01E Murata Manufacturing Co.,Ltd.
C11 22000pF GRM216R11H223KA01E Murata Manufacturing Co.,Ltd.
C12 22μF A0603 NICHICON CORPORATION

R1 5.1k OHM CR20-512JB Hokuriku Electric Industry Co.,Ltd.

R2 1.5 OHM CR16-1R5JB Hokuriku Electric Industry Co.,Ltd.

R3 270 OHM RPC10 271-J TAIYOSHA ELECTRIC Co.,Ltd.

L1 6.8nH LQG18HN6N8J00D Murata Manufacturin

L2 3.6nH LLQ1608-F3N6 TOKO Co.,Ltd.

Co.,Ltd.

Inductance

L3

Diameter:0.40mm,φ2.46mm(the out side diameter)

L4

Diameter:0.23mm,φ1.62mm(the out side diameter)

34.5nH Enameled wire 5Turns,

6.6nH Enameled wire 2Turns,

RD02MUS1B test fixture (@f=400- 470MHz)

Vgg

GND

4005A yc corporation Co.,Ltd.

2302S yc corporation Co.,Ltd.

Vdd

GND

RF-out RF-in

Application Note for Silicon RF Power Semiconductors

15/15