MITSUBISHI AN-UHF-108-A User Manual

APPLICATION NOTE

SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

SUMMARY:

This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs.

Pout characteristics, Pout vs. Vdd characteristics and Pout vs. Idq characteristics) at f=400 to

470MHz.

Silicon RF Power Semiconductors

Document NO. AN-UHF-108-A
Date : 3
Rev. Date :22
Prepared : H.Ukita, K.Osaki

Confirmed : S.Kametani

(Taking charge of Silicon RF by

th

Jun. 2010

th

Jun. 2010

Y.Tanaka

MIYOSHI Electronics)

- Sample history:

RD02MUS1B: Lot number “093AF-G”

- Evaluate conditions:

@f=400MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

@f=435MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

@f=470MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)

- Results:

Page 2-4 shows the Output Power, Drain Efficiency vs. Frequency data.

Page 5-7 shows the Output Power, Power Gain, Drain Efficiency vs. Input Power data.

Page 8-10 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Voltage data.

Page 11-13 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current data.

Page 14 shows the Input / Output Impedance vs. Frequency characteristics

Page 15 shows the Equivalent Circuit and schematic for test fixture.

Application Note for Silicon RF Power Semiconductors

1/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

ηd

2.5

Pin=50mW
Vdd=7.2V
Idq=0.2A

2.0

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 2.88 32.2 1.64 15.2 0.54 42.1 40.8 -4.4 -24.8 <-55
390 2.88 32.8 1.92 15.8 0.55 48.0 46.8 -6.2 -26.4 <-55
400 2.88 33.2 2.11 16.2 0.55 52.9 51.7 -8.9 -27.7 <-55
410 2.88 33.4 2.18 16.4 0.54 56.2 54.9 -13.0 -28.6 <-55
420 2.88 33.4 2.17 16.4 0.52 58.0 56.6 -16.1 -29.6 <-55
430 2.88 33.2 2.11 16.2 0.50 58.6 57.2 -13.6 -32.7 <-55
440 2.88 33.1 2.03 16.1 0.48 58.6 57.1 -10.6 -39.3 <-55
450 2.88 32.9 1.93 15.9 0.47 57.7 56.2 -8.7 -47.1 <-55
460 2.88 32.7 1.84 15.7 0.45 56.5 55.0 -7.6 <-55 <-55
470 2.88 32.5 1.76 15.5 0.45 55.0 53.4 -7.0 <-55 <-55
480 2.88 32.3 1.68 15.3 0.44 52.9 51.4 -6.7 <-55 <-55
490 2.88 32.1 1.61 15.1 0.44 50.9 49.3 -6.5 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

2/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.3A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

Pin=50mW
Vdd=7.2V

2.5

Idq=0.3A

2.0

ηd

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 3.07 33.0 1.99 16.0 0.61 45.5 44.4 -4.9 -26.2 <-55
390 3.07 33.5 2.24 16.5 0.61 51.0 49.8 -6.9 -27.3 <-55
400 3.07 33.8 2.38 16.8 0.60 55.2 54.1 -10.0 -28.3 <-55
410 3.07 33.8 2.41 16.8 0.58 57.9 56.7 -14.5 -29.1 <-55
420 3.07 33.7 2.37 16.8 0.55 59.4 58.1 -16.1 -30.0 <-55
430 3.07 33.6 2.28 16.6 0.53 59.7 58.4 -12.5 -33.0 <-55
440 3.07 33.4 2.19 16.4 0.51 59.5 58.1 -9.6 -39.6 <-55
450 3.07 33.2 2.10 16.2 0.50 58.6 57.2 -7.9 -47.4 <-55
460 3.07 33.0 2.01 16.0 0.49 57.2 55.8 -6.9 <-55 <-55
470 3.07 32.8 1.92 15.8 0.48 55.4 54.0 -6.5 <-55 <-55
480 3.07 32.7 1.84 15.7 0.48 53.4 51.9 -6.1 <-55 <-55
490 3.07 32.5 1.77 15.5 0.48 51.2 49.8 -6.0 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

3/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

RD02MUS1B Output Power, Drain Efficiency vs. Frequency

(@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.4A)

- AN-UHF-108-A-

Output Power Po(W) ,

3.0

Pin=50mW
Vdd=7.2V

2.5

Idq=0.4A

2.0

ηd

1.5

Drain Current Idd(A)

1.0

Idd

0.5

0.0

380 390 400 410 420 430 440 450 460 470 480 490

Frequency(MHz)

Po

70

60

50

40

30

20

10

Drain Effic iency ηd(%)

Freq. Vgg Gp Idd ηdPAE

Output Power

(MHz) (V) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

380 3.21 33.5 2.25 16.5 0.66 47.6 46.6 -5.3 -27.0 <-55
390 3.21 33.9 2.46 16.9 0.65 52.7 51.6 -7.5 -27.8 <-55
400 3.21 34.1 2.56 17.1 0.63 56.5 55.4 -11.0 -28.6 <-55
410 3.21 34.1 2.56 17.1 0.60 58.9 57.7 -15.9 -29.3 <-55
420 3.21 34.0 2.50 17.0 0.58 60.1 58.9 -15.6 -30.1 <-55
430 3.21 33.8 2.40 16.8 0.55 60.1 58.9 -11.5 -33.1 <-55
440 3.21 33.6 2.30 16.6 0.54 59.7 58.4 -8.9 -39.7 <-55
450 3.21 33.4 2.21 16.4 0.52 58.6 57.2 -7.3 -47.3 <-55
460 3.21 33.3 2.12 16.3 0.52 57.1 55.7 -6.5 <-55 <-55
470 3.21 33.1 2.04 16.1 0.51 55.2 53.9 -6.0 <-55 <-55
480 3.21 32.9 1.96 15.9 0.51 53.0 51.7 -5.8 <-55 <-55
490 3.21 32.8 1.89 15.8 0.52 50.7 49.4 -5.7 <-55 <-55

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

4/15

RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

s

r

RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power

(@ f=400MHz, Vdd=7.2V, Idq=0.2A)

- AN-UHF-108-A-

Output Power Po(dBm) ,

Power Gain GP(dB)

40

35

30

25

20

15

10

f=400MHz
Vdd=7.2V
Idq=0.2A

Po

GP

ηd

70

60

50

40

30

20

10

Drain Efficiency ηd (%)

0 5 10 15 20

Input Power Pin(dBm)

Vgg Pin Pin Gp Idd ηd P.A.E.

(V) (dBm) (W) (dBm) (W) (dB) (A) (%) (%) (dB) (dBc) (dBc)

2.88 0.0 0.001 20.1 0.10 20.1 0.22 6.5 6.5 -9.4 -36.1 <-55

2.88 1.0 0.001 21.0 0.13 20.0 0.22 8.0 7.9 -9.3 -35.3 <-55

2.88 2.0 0.002 21.9 0.16 19.9 0.23 9.6 9.5 -9.2 -34.2 <-55

2.88 3.0 0.002 22.8 0.19 19.8 0.23 11.4 11.3 -9.0 -33.6 <-55

2.88 4.0 0.003 23.7 0.23 19.7 0.24 13.4 13.2 -8.9 -32.2 <-55

2.88 5.0 0.003 24.6 0.29 19.6 0.25 15.7 15.6 -8.8 -31.2 <-55

2.88 6.0 0.004 25.4 0.35 19.4 0.27 18.2 18.0 -8.6 -30.4 <-55

2.88 7.0 0.005 26.3 0.42 19.3 0.28 20.8 20.6 -8.5 -29.4 <-55

2.88 8.0 0.006 27.1 0.52 19.1 0.30 23.6 23.3 -8.4 -28.8 <-55

2.88 9.0 0.008 28.0 0.63 19.0 0.33 26.8 26.4 -8.3 -28.5 <-55

2.88 10.0 0.010 28.8 0.76 18.8 0.35 30.1 29.7 -8.3 -28.0 <-55

2.88 11.0 0.013 29.7 0.92 18.7 0.38 33.6 33.1 -8.4 -27.7 <-55

2.88 12.0 0.016 30.4 1.11 18.4 0.41 37.2 36.7 -8.5 -27.7 <-55

2.88 13.0 0.020 31.1 1.30 18.1 0.44 40.8 40.2 -8.7 -27.8 <-55

2.88 14.0 0.025 31.8 1.51 17.8 0.47 44.2 43.5 -8.8 -27.8 <-55

2.88 15.0 0.032 32.3 1.71 17.3 0.50 47.3 46.5 -8.8 -27.6 <-55

2.88 16.0 0.040 32.8 1.91 16.8 0.53 50.4 49.3 -8.9 -27.7 <-55

2.88 17.0 0.050 33.2 2.10 16.2 0.55 52.9 51.6 -8.9 -27.7 <-55

2.88 18.0 0.063 33.6 2.28 15.6 0.58 55.2 53.6 -8.9 -27.6 <-55

2.88 19.0 0.080 33.9 2.45 14.9 0.60 57.1 55.2 -9.0 -27.5 <-55

2.88 20.0 0.100 34.1 2.60 14.1 0.62 58.7 56.4 -9.0 -27.5 <-55

Output Powe

Return Los

2fo 3fo

Application Note for Silicon RF Power Semiconductors

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