MITSUBISHI AN-UHF-098-B User Manual
Silicon RF Power Semiconductors
SUBJECT: RD07MUS2B single-stage amplifier
SUMMARY:
APPLICATION NOTE
Document NO. AN-UHF-098-B
Date : 15
Rev. Date :22
Prepared : Y.Takase
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
efficiency matching RF performance at f= 400-470MHz,Vdd=7.2V
This application note shows the RF wide band characteristics data
(Frequency characteristics, Pout vs. Pin characteristics) at 400 to 470 MHz band.
- Sample history :
th
Sep. 2009
th
Jun. 2010
MIYOSHI Electronics)
RD07MUS2B: Lot number “086ZE-G”
- Evaluate conditions :
RD07MUS2B @f=400 to 470MHz : Vds=7.2V, Idq=250mA (Vgs adjust)
- Results :
Page 2-3. shows the typical RF characteristics (Frequency characteristics) data.
Page 4-9. shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 10-12. shows the typical RF characteristics (Pout vs. Vgg characteristics) data.
Page 13. shows the efficiency matching equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/13
RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V
f
- AN-UHF-098-B-
RD07MUS2B single-stage amplifier Frequency characteristics 1
@ Vdd=7.2V, Idq=250mA, Po=6.3W (38dBm ; ANT 5W + 1dB Condition)
20
18
16
14
12
10
8
Gp(dB), Ids (A)
6
4
2
0
340 360 380 400 420 440 460 480
ηdGp
Ids
P.A.E.
80
76
72
68
64
60
56
52
48
44
40
ηd(%), P.A.E.(%)
Vds
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 340 0.487 26.9 11.1 1.85 47.4 43.7
350 0.437 26.4 11.6 1.77 49.5 46.0
360 0.359 25.5 12.5 1.70 51.5 48.6
370 0.297 24.7 13.3 1.64 53.4 50.9
380 0.249 24.0 14.0 1.59 55.2 53.0
390 0.210 23.2 14.8 1.54 56.8 54.9
400 0.179 22.5 15.5 1.51 58.1 56.5
410 0.154 21.9 16.1 1.48 59.2 57.7
420 0.139 21.4 16.6 1.46 59.9 58.5
430 0.131 21.2 16.8 1.45 60.3 59.0
435 0.133 21.2 16.8 1.46 60.2 58.9
440 0.134 21.3 16.7 1.46 60.0 58.8
450 0.138 21.4 16.6 1.47 59.8 58.5
460 0.148 21.7 16.3 1.48 59.2 57.9
470 0.164 22.1 15.9 1.49 58.8 57.2
480 0.182 22.6 15.4 1.50 58.5 56.8
Pi Pi Gp Ids ηd P.A.E.
f (MHz)
Application Note for Silicon RF Power Semiconductors
2/13
RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V
f
- AN-UHF-098-B-
RD07MUS2B single-stage amplifier Frequency characteristics 2
@ Vdd=7.2V, Idq=250mA, Pi=0.4W (26dBm)
ηd
16
14
12
10
8
6
4
Po(W), Gp(dB), Ids (A)
2
0
Gp
Po
340 360 380 400 420 440 460 480
f (MHz)
Ids
P.A.E.
80
75
70
65
60
55
ηd(%), P.A.E.(%)
50
45
40
Vds
(V) (MHz) (W) (dBm) (dB) (A) (%) (%)
7.2 340 6.03 37.8 11.8 1.79 46.8 43.7
350 6.28 38.0 11.9 1.75 49.9 46.7
360 6.61 38.2 12.2 1.73 53.0 49.8
370 6.90 38.4 12.4 1.72 55.8 52.6
380 7.14 38.5 12.5 1.70 58.2 55.0
390 7.31 38.6 12.6 1.69 60.2 56.9
400 7.42 38.7 12.7 1.67 61.6 58.3
410 7.46 38.7 12.7 1.66 62.6 59.2
420 7.45 38.7 12.7 1.64 63.0 59.6
430 7.39 38.7 12.6 1.63 62.9 59.5
440 7.31 38.6 12.6 1.63 62.5 59.0
450 7.22 38.6 12.6 1.63 61.7 58.3
460 7.15 38.5 12.5 1.63 60.8 57.4
470 7.11 38.5 12.5 1.64 60.1 56.7
480 7.07 38.5 12.5 1.65 59.7 56.3
Po Po Gp Ids ηd P.A.E.
Application Note for Silicon RF Power Semiconductors
3/13
RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V
- AN-UHF-098-B-
RD07MUS2B single-stage amplifier Pout vs. Pin characteristics
@ Vdd=7.2V, Idq=250mA, f=350MHz, 380MHz, 400MHz, 435MHz, 470MHz
10
9
470MHz
8
7
6
5
Po (W)
4
3
2
1
0
0.000 0.200 0.400 0.600 0.800
350MHz
380MHz
400MHz
435MHz
Pi (W)
40
35
30
25
20
Po (dBm)
15
10
5
0
0 5 10 15 20 25 30
25
435MHz 470MHz
2.0
20
15
1.6
1.2
Gp (dB)
10
350MHz
5
400MHz
380MHz
Ids (A)
0.8
0.4
470MHz
380MHz
350MHz
Pin (dBm)
470MHz
435MHz
400MHz
435MHz
400MHz
380MHz
350MHz
0
0 5 10 15 20 25 30
Pin (dBm)
0.0
0 5 10 15 20 25 30
Pin (dBm)
80
70
60
50
40
P.A.E. (%)
30
20
10
0
0 5 10 15 20 25 30
435MHz
400MHz
470MHz
350MHz
Pin (dBm)
380MHz
80
70
60
50
40
ηd (%)
30
20
10
0
0 5 10 15 20 25 30
435MHz
400MHz
470MHz
380MHz
350MHz
Pin (dBm)
Application Note for Silicon RF Power Semiconductors
4/13
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