MITSUBISHI AN-UHF-098-B User Manual

Silicon RF Power Semiconductors

SUBJECT: RD07MUS2B single-stage amplifier

SUMMARY:

APPLICATION NOTE

Document NO. AN-UHF-098-B
Date : 15
Rev. Date :22
Prepared : Y.Takase
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by

efficiency matching RF performance at f= 400-470MHz,Vdd=7.2V

This application note shows the RF wide band characteristics data

(Frequency characteristics, Pout vs. Pin characteristics) at 400 to 470 MHz band.

- Sample history :

th

Sep. 2009

th

Jun. 2010

MIYOSHI Electronics)

RD07MUS2B: Lot number “086ZE-G”

- Evaluate conditions :

RD07MUS2B @f=400 to 470MHz : Vds=7.2V, Idq=250mA (Vgs adjust)

- Results :

Page 2-3. shows the typical RF characteristics (Frequency characteristics) data.

Page 4-9. shows the typical RF characteristics (Pout vs. Pin characteristics) data.

Page 10-12. shows the typical RF characteristics (Pout vs. Vgg characteristics) data.

Page 13. shows the efficiency matching equivalent circuit.

Application Note for Silicon RF Power Semiconductors

1/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

f

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Frequency characteristics 1

@ Vdd=7.2V, Idq=250mA, Po=6.3W (38dBm ; ANT 5W + 1dB Condition)

20

18

16

14

12

10

8

Gp(dB), Ids (A)

6

4

2

0

340 360 380 400 420 440 460 480

ηdGp

Ids

P.A.E.

80

76

72

68

64

60

56

52

48

44

40

ηd(%), P.A.E.(%)

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 340 0.487 26.9 11.1 1.85 47.4 43.7
350 0.437 26.4 11.6 1.77 49.5 46.0
360 0.359 25.5 12.5 1.70 51.5 48.6
370 0.297 24.7 13.3 1.64 53.4 50.9
380 0.249 24.0 14.0 1.59 55.2 53.0
390 0.210 23.2 14.8 1.54 56.8 54.9
400 0.179 22.5 15.5 1.51 58.1 56.5
410 0.154 21.9 16.1 1.48 59.2 57.7
420 0.139 21.4 16.6 1.46 59.9 58.5
430 0.131 21.2 16.8 1.45 60.3 59.0
435 0.133 21.2 16.8 1.46 60.2 58.9
440 0.134 21.3 16.7 1.46 60.0 58.8
450 0.138 21.4 16.6 1.47 59.8 58.5
460 0.148 21.7 16.3 1.48 59.2 57.9
470 0.164 22.1 15.9 1.49 58.8 57.2
480 0.182 22.6 15.4 1.50 58.5 56.8

Pi Pi Gp Ids ηd P.A.E.

f (MHz)

Application Note for Silicon RF Power Semiconductors

2/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

f

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Frequency characteristics 2

@ Vdd=7.2V, Idq=250mA, Pi=0.4W (26dBm)

ηd

16

14

12

10

8

6

4

Po(W), Gp(dB), Ids (A)

2

0

Gp

Po

340 360 380 400 420 440 460 480

f (MHz)

Ids

P.A.E.

80

75

70

65

60

55

ηd(%), P.A.E.(%)

50

45

40

Vds

(V) (MHz) (W) (dBm) (dB) (A) (%) (%)

7.2 340 6.03 37.8 11.8 1.79 46.8 43.7
350 6.28 38.0 11.9 1.75 49.9 46.7
360 6.61 38.2 12.2 1.73 53.0 49.8
370 6.90 38.4 12.4 1.72 55.8 52.6
380 7.14 38.5 12.5 1.70 58.2 55.0
390 7.31 38.6 12.6 1.69 60.2 56.9
400 7.42 38.7 12.7 1.67 61.6 58.3
410 7.46 38.7 12.7 1.66 62.6 59.2
420 7.45 38.7 12.7 1.64 63.0 59.6
430 7.39 38.7 12.6 1.63 62.9 59.5
440 7.31 38.6 12.6 1.63 62.5 59.0
450 7.22 38.6 12.6 1.63 61.7 58.3
460 7.15 38.5 12.5 1.63 60.8 57.4
470 7.11 38.5 12.5 1.64 60.1 56.7
480 7.07 38.5 12.5 1.65 59.7 56.3

Po Po Gp Ids ηd P.A.E.

Application Note for Silicon RF Power Semiconductors

3/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics

@ Vdd=7.2V, Idq=250mA, f=350MHz, 380MHz, 400MHz, 435MHz, 470MHz

10

9

470MHz

8

7

6

5

Po (W)

4

3

2

1

0

0.000 0.200 0.400 0.600 0.800

350MHz

380MHz

400MHz

435MHz

Pi (W)

40

35

30

25

20

Po (dBm)

15

10

5

0

0 5 10 15 20 25 30

25

435MHz 470MHz

2.0

20

15

1.6

1.2

Gp (dB)

10

350MHz

5

400MHz

380MHz

Ids (A)

0.8

0.4

470MHz

380MHz

350MHz

Pin (dBm)

470MHz

435MHz

400MHz

435MHz

400MHz

380MHz

350MHz

0

0 5 10 15 20 25 30

Pin (dBm)

0.0

0 5 10 15 20 25 30

Pin (dBm)

80

70

60

50

40

P.A.E. (%)

30

20

10

0

0 5 10 15 20 25 30

435MHz

400MHz

470MHz

350MHz

Pin (dBm)

380MHz

80

70

60

50

40

ηd (%)

30

20

10

0

0 5 10 15 20 25 30

435MHz

400MHz

470MHz

380MHz

350MHz

Pin (dBm)

Application Note for Silicon RF Power Semiconductors

4/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Pout vs. Pin characteristics data

@ f=350MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.46 0.001 0.0 0.024 13.7 13.7 0.27 1.2 1.1

7.46 0.001 1.0 0.029 14.7 13.7 0.27 1.5 1.4

7.45 0.002 2.0 0.037 15.7 13.7 0.27 1.8 1.7

7.45 0.002 3.0 0.046 16.6 13.6 0.28 2.2 2.1

7.45 0.003 4.0 0.058 17.6 13.6 0.28 2.7 2.6

7.45 0.003 5.0 0.072 18.6 13.6 0.29 3.3 3.2

7.45 0.004 6.0 0.090 19.6 13.5 0.30 4.0 3.8

7.45 0.005 7.0 0.112 20.5 13.5 0.31 4.8 4.6

7.45 0.006 8.0 0.141 21.5 13.5 0.33 5.7 5.5

7.44 0.008 9.0 0.175 22.4 13.5 0.35 6.8 6.5

7.44 0.010 10.0 0.219 23.4 13.4 0.37 7.9 7.6

7.43 0.012 11.0 0.275 24.4 13.4 0.40 9.2 8.8

7.43 0.016 12.0 0.345 25.4 13.4 0.44 10.7 10.2

7.42 0.020 13.0 0.434 26.4 13.4 0.48 12.2 11.7

7.41 0.025 14.0 0.550 27.4 13.4 0.53 14.1 13.4

7.40 0.031 15.0 0.700 28.5 13.5 0.59 16.1 15.4

7.39 0.040 16.0 0.892 29.5 13.5 0.66 18.4 17.6

7.38 0.050 17.0 1.140 30.6 13.6 0.73 21.1 20.1

7.36 0.063 18.0 1.467 31.7 13.7 0.83 24.1 23.0

7.34 0.079 19.0 1.890 32.8 13.8 0.94 27.5 26.4

7.32 0.099 20.0 2.418 33.8 13.9 1.06 31.3 30.0

7.30 0.125 21.0 3.069 34.9 13.9 1.19 35.3 33.8

7.28 0.157 22.0 3.829 35.8 13.9 1.34 39.3 37.7

7.25 0.198 23.0 4.572 36.6 13.6 1.47 42.8 40.9

7.23 0.249 24.0 5.221 37.2 13.2 1.59 45.5 43.3

7.22 0.314 25.0 5.752 37.6 12.6 1.68 47.5 44.9

7.21 0.396 26.0 6.188 37.9 11.9 1.75 49.1 45.9

7.20 0.497 27.0 6.546 38.2 11.2 1.81 50.3 46.5

7.19 0.627 28.0 6.857 38.4 10.4 1.86 51.4 46.7

7.18 0.791 29.0 7.119 38.5 9.5 1.90 52.2 46.4

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

5/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

@ f=380MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

, Idq=250mA

7.44 0.001 0.0 0.040 16.0 16.0 0.27 2.0 1.9

7.44 0.001 1.0 0.050 17.0 16.0 0.28 2.4 2.4

7.44 0.002 2.0 0.063 18.0 16.0 0.28 3.0 2.9

7.44 0.002 3.0 0.078 18.9 15.9 0.29 3.7 3.6

7.44 0.003 4.0 0.099 19.9 15.9 0.30 4.5 4.4

7.43 0.003 5.0 0.124 20.9 15.9 0.31 5.4 5.3

7.43 0.004 6.0 0.155 21.9 15.9 0.32 6.5 6.4

7.43 0.005 7.0 0.195 22.9 15.9 0.34 7.8 7.6

7.43 0.006 8.0 0.246 23.9 15.9 0.36 9.2 9.0

7.42 0.008 9.0 0.309 24.9 15.9 0.39 10.8 10.5

7.42 0.010 10.0 0.391 25.9 15.9 0.42 12.6 12.3

7.41 0.013 11.0 0.496 27.0 16.0 0.46 14.7 14.3

7.40 0.016 12.0 0.629 28.0 16.0 0.50 16.9 16.5

7.39 0.020 13.0 0.805 29.1 16.1 0.56 19.5 19.1

7.38 0.025 14.0 1.028 30.1 16.1 0.62 22.4 21.9

7.37 0.031 15.0 1.322 31.2 16.2 0.70 25.7 25.1

7.35 0.040 16.0 1.698 32.3 16.3 0.79 29.4 28.7

7.34 0.050 17.0 2.188 33.4 16.4 0.89 33.6 32.9

7.32 0.063 18.0 2.784 34.4 16.5 1.00 38.0 37.1

7.30 0.079 19.0 3.497 35.4 16.4 1.13 42.5 41.5

7.28 0.100 20.0 4.238 36.3 16.3 1.25 46.5 45.4

7.26 0.125 21.0 4.887 36.9 15.9 1.36 49.6 48.3

7.24 0.158 22.0 5.462 37.4 15.4 1.45 52.0 50.5

7.23 0.199 23.0 5.950 37.7 14.8 1.53 53.9 52.1

7.22 0.249 24.0 6.360 38.0 14.1 1.59 55.3 53.2

7.21 0.313 25.0 6.725 38.3 13.3 1.65 56.5 53.9

7.20 0.394 26.0 7.043 38.5 12.5 1.70 57.5 54.3

7.19 0.494 26.9 7.315 38.6 11.7 1.74 58.3 54.4

7.18 0.623 27.9 7.558 38.8 10.8 1.78 59.1 54.2

7.18 0.786 29.0 7.771 38.9 9.9 1.81 59.7 53.7

Application Note for Silicon RF Power Semiconductors

6/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

@ f=400MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.44 0.001 0.0 0.061 17.8 17.8 0.28 3.0 2.9

7.44 0.001 1.0 0.076 18.8 17.8 0.28 3.6 3.6

7.44 0.002 2.0 0.095 19.8 17.8 0.29 4.4 4.4

7.44 0.002 3.0 0.120 20.8 17.8 0.30 5.4 5.3

7.43 0.003 4.0 0.151 21.8 17.8 0.31 6.6 6.4

7.43 0.003 5.0 0.190 22.8 17.8 0.33 7.9 7.7

7.43 0.004 6.0 0.240 23.8 17.8 0.34 9.4 9.2

7.42 0.005 7.0 0.303 24.8 17.8 0.37 11.1 10.9

7.42 0.006 8.0 0.382 25.8 17.8 0.39 13.1 12.9

7.41 0.008 9.0 0.486 26.9 17.9 0.43 15.3 15.0

7.41 0.010 10.0 0.615 27.9 17.9 0.47 17.7 17.4

7.40 0.012 11.0 0.788 29.0 18.0 0.52 20.5 20.2

7.39 0.016 12.0 1.011 30.0 18.1 0.58 23.6 23.3

7.38 0.020 13.0 1.295 31.1 18.2 0.65 27.1 26.7

7.36 0.025 14.0 1.668 32.2 18.3 0.73 31.2 30.7

7.35 0.031 14.9 2.135 33.3 18.3 0.82 35.5 35.0

7.33 0.039 15.9 2.711 34.3 18.4 0.92 40.1 39.5

7.31 0.049 16.9 3.396 35.3 18.4 1.04 44.7 44.0

7.29 0.062 17.9 4.107 36.1 18.2 1.16 48.8 48.0

7.28 0.078 18.9 4.741 36.8 17.8 1.26 51.9 51.1

7.26 0.098 19.9 5.287 37.2 17.3 1.34 54.3 53.3

7.25 0.123 20.9 5.763 37.6 16.7 1.42 56.2 55.0

7.24 0.155 21.9 6.167 37.9 16.0 1.48 57.6 56.2

7.23 0.195 22.9 6.526 38.1 15.2 1.54 58.8 57.0

7.22 0.246 23.9 6.842 38.4 14.4 1.59 59.7 57.6

7.21 0.308 24.9 7.115 38.5 13.6 1.63 60.5 57.9

7.21 0.388 25.9 7.359 38.7 12.8 1.67 61.2 58.0

7.20 0.489 26.9 7.573 38.8 11.9 1.70 61.8 57.8

7.19 0.613 27.9 7.756 38.9 11.0 1.73 62.3 57.4

7.19 0.774 28.9 7.922 39.0 10.1 1.76 62.7 56.6

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

7/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

@ f=435MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.42 0.001 0.0 0.112 20.5 20.5 0.29 5.2 5.1

7.42 0.001 1.0 0.141 21.5 20.5 0.30 6.3 6.3

7.42 0.002 2.0 0.177 22.5 20.5 0.31 7.7 7.6

7.42 0.002 3.0 0.225 23.5 20.5 0.33 9.3 9.2

7.41 0.003 4.0 0.284 24.5 20.5 0.35 11.1 11.0

7.41 0.003 5.0 0.360 25.6 20.5 0.37 13.1 13.0

7.40 0.004 6.0 0.459 26.6 20.6 0.40 15.5 15.4

7.40 0.005 7.0 0.582 27.7 20.6 0.43 18.2 18.0

7.39 0.006 8.0 0.745 28.7 20.7 0.48 21.2 21.0

7.38 0.008 9.0 0.956 29.8 20.8 0.53 24.6 24.4

7.37 0.010 10.0 1.221 30.9 20.9 0.59 28.3 28.0

7.36 0.013 11.0 1.563 31.9 20.9 0.66 32.4 32.1

7.35 0.016 12.0 2.005 33.0 21.0 0.74 37.1 36.8

7.33 0.020 13.0 2.549 34.1 21.0 0.83 41.9 41.5

7.32 0.025 14.1 3.159 35.0 20.9 0.93 46.4 46.0

7.30 0.032 15.1 3.779 35.8 20.7 1.03 50.2 49.8

7.28 0.041 16.1 4.381 36.4 20.3 1.13 53.3 52.8

7.27 0.051 17.1 4.883 36.9 19.8 1.21 55.6 55.0

7.26 0.064 18.0 5.314 37.3 19.2 1.28 57.3 56.6

7.25 0.080 19.0 5.701 37.6 18.5 1.34 58.6 57.8

7.24 0.100 20.0 6.025 37.8 17.8 1.40 59.5 58.5

7.23 0.124 20.9 6.305 38.0 17.1 1.45 60.3 59.1

7.22 0.155 21.9 6.561 38.2 16.3 1.49 60.9 59.5

7.21 0.194 22.9 6.786 38.3 15.4 1.53 61.4 59.6

7.21 0.243 23.8 6.981 38.4 14.6 1.57 61.8 59.7

7.20 0.304 24.8 7.155 38.5 13.7 1.60 62.2 59.6

7.20 0.382 25.8 7.308 38.6 12.8 1.62 62.6 59.3

7.20 0.478 26.8 7.442 38.7 11.9 1.64 62.9 58.9

7.19 0.602 27.8 7.564 38.8 11.0 1.66 63.2 58.2

7.19 0.759 28.8 7.674 38.9 10.0 1.68 63.5 57.2

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

8/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

@ f=470MHz

Vds Pi Pi Po Po Gp Ids ηd P.A.E.

(V) (W) (dBm) (W) (dBm) (dB) (A) (%) (%)

7.42 0.001 0.0 0.106 20.2 20.3 0.29 4.9 4.9

7.42 0.001 1.0 0.134 21.3 20.3 0.30 6.0 6.0

7.42 0.002 2.0 0.169 22.3 20.3 0.31 7.3 7.2

7.42 0.002 3.0 0.214 23.3 20.3 0.33 8.9 8.8

7.41 0.003 4.0 0.270 24.3 20.3 0.34 10.6 10.5

7.41 0.003 5.0 0.341 25.3 20.3 0.37 12.6 12.5

7.41 0.004 6.0 0.432 26.4 20.3 0.39 14.9 14.7

7.40 0.005 7.0 0.549 27.4 20.4 0.43 17.5 17.3

7.39 0.006 8.0 0.696 28.4 20.4 0.46 20.3 20.1

7.39 0.008 9.0 0.887 29.5 20.5 0.51 23.5 23.3

7.38 0.010 10.0 1.125 30.5 20.5 0.57 27.0 26.8

7.37 0.013 11.0 1.433 31.6 20.6 0.63 30.9 30.7

7.35 0.016 12.0 1.813 32.6 20.6 0.70 35.2 34.9

7.34 0.020 13.0 2.282 33.6 20.6 0.78 39.7 39.4

7.33 0.025 14.0 2.815 34.5 20.5 0.87 44.0 43.6

7.31 0.032 15.0 3.363 35.3 20.2 0.97 47.7 47.2

7.29 0.040 16.1 3.933 35.9 19.9 1.06 50.9 50.3

7.28 0.051 17.1 4.471 36.5 19.4 1.15 53.4 52.8

7.26 0.064 18.1 4.947 36.9 18.9 1.23 55.3 54.6

7.25 0.081 19.1 5.376 37.3 18.2 1.31 56.6 55.8

7.24 0.102 20.1 5.747 37.6 17.5 1.38 57.6 56.6

7.23 0.129 21.1 6.073 37.8 16.7 1.44 58.4 57.1

7.22 0.162 22.1 6.350 38.0 15.9 1.49 58.9 57.4

7.21 0.204 23.1 6.593 38.2 15.1 1.54 59.4 57.5

7.21 0.257 24.1 6.802 38.3 14.2 1.58 59.7 57.4

7.20 0.323 25.1 6.978 38.4 13.3 1.61 60.0 57.3

7.19 0.409 26.1 7.134 38.5 12.4 1.64 60.3 56.9

7.19 0.515 27.1 7.268 38.6 11.5 1.67 60.6 56.3

7.19 0.648 28.1 7.387 38.7 10.6 1.69 60.9 55.5

7.18 0.821 29.1 7.498 38.7 9.6 1.71 61.1 54.4

, Idq=250mA

Application Note for Silicon RF Power Semiconductors

9/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Pout vs. Vgg characteristics

@ Vdd=7.2V, Pi=0.4W (=26dBm), f=400MHz, 435MHz, 470MHz

10

@f=435MHz

8

6

Po (W)

4

@f=470MHz

2.4

2.0

1.6

1.2

Ids (A)

0.8

2

@f=400MHz

0

012

Vgg (V)

0.4

0.0

80

70

60

50

40

P.A.E. (%)

30

20

10

0

@f=400MHz

012

@f=435MHz

@f=470MHz

Vgg (V)

80

70

60

50

40

ηd (%)

30

20

10

0

@f=470MHz

@f=400MHz

012

Vgg (V)

@f=435MHz

@f=400MHz

012

Vgg (V)

@f=435MHz

@f=470MHz

Application Note for Silicon RF Power Semiconductors

10/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier Pout vs. Vgg characteristics data

@ f=400MHz

, Pi=0.4W (=26dBm)

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 1.48 31.7 0.53 38.6 28.1

0.1 0 1.92 32.8 0.63 42.5 33.6

0.2 0 2.27 33.6 0.70 45.2 37.3

0.3 0 2.68 34.3 0.78 47.9 40.7

0.4 0 3.07 34.9 0.85 50.0 43.5

0.5 0 3.49 35.4 0.93 52.1 46.1

0.6 0 3.90 35.9 1.01 53.9 48.3

0.7 0 4.35 36.4 1.09 55.4 50.4

0.8 0 4.77 36.8 1.17 56.7 52.0

0.9 0 5.19 37.2 1.25 57.9 53.5

1.0 0 5.61 37.5 1.32 59.0 54.8

1.1 0 6.03 37.8 1.40 59.9 55.9

1.2 0.01 6.44 38.1 1.48 60.5 56.8

1.3 0.05 6.81 38.3 1.55 61.0 57.5

1.4 0.15 7.20 38.6 1.63 61.4 58.0

1.5 0.35 7.55 38.8 1.70 61.6 58.3

1.6 0.67 7.89 39.0 1.78 61.7 58.5

1.7 1.07 8.22 39.1 1.86 61.6 58.6

1.8 1.52 8.53 39.3 1.93 61.3 58.4

1.9 1.95 8.82 39.5 2.01 60.9 58.2

2.0 2.37 9.05 39.6 2.08 60.4 57.8

Application Note for Silicon RF Power Semiconductors

11/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

- AN-UHF-098-B-

@ f=435MHz

, Pi=0.4W (=26dBm)

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 3.78 35.8 0.91 57.7 51.6

0.1 0 4.12 36.2 0.97 58.8 53.1

0.2 0 4.35 36.4 1.02 59.5 54.1

0.3 0 4.62 36.6 1.06 60.3 55.0

0.4 0 4.85 36.9 1.11 60.9 55.9

0.5 0 5.09 37.1 1.15 61.4 56.6

0.6 0 5.36 37.3 1.20 61.8 57.2

0.7 0 5.58 37.5 1.25 62.2 57.8

0.8 0 5.83 37.7 1.30 62.5 58.2

0.9 0 6.07 37.8 1.34 62.7 58.6

1.0 0 6.31 38.0 1.39 62.9 58.9

1.1 0 6.54 38.2 1.44 63.1 59.2

1.2 0.01 6.76 38.3 1.49 63.1 59.3

1.3 0.05 7.02 38.5 1.54 63.0 59.4

1.4 0.15 7.20 38.6 1.59 62.9 59.4

1.5 0.35 7.41 38.7 1.64 62.7 59.3

1.6 0.67 7.63 38.8 1.70 62.3 59.1

1.7 1.07 7.81 38.9 1.75 62.0 58.8

1.8 1.52 8.04 39.1 1.81 61.6 58.5

1.9 1.95 8.21 39.1 1.87 61.1 58.1

2.0 2.37 8.40 39.2 1.93 60.5 57.6

@ f=470MHz

, Pi=0.4W (=26dBm)

Vgg Idq Po Po Ids ηd P.A.E.

(V) (A) (W) (dBm) (A) (%) (%)

0.0 0 4.08 36.1 0.96 58.8 53.1

0.1 0 4.35 36.4 1.01 59.6 54.1

0.2 0 4.55 36.6 1.05 60.1 54.8

0.3 0 4.78 36.8 1.10 60.5 55.4

0.4 0 4.97 37.0 1.14 60.9 56.0

0.5 0 5.19 37.2 1.18 61.1 56.4

0.6 0 5.39 37.3 1.22 61.3 56.8

0.7 0 5.59 37.5 1.26 61.4 57.0

0.8 0 5.82 37.6 1.31 61.5 57.3

0.9 0 6.01 37.8 1.36 61.5 57.4

1.0 0 6.21 37.9 1.40 61.5 57.5

1.1 0 6.35 38.0 1.44 61.2 57.4

1.2 0.01 6.56 38.2 1.49 61.0 57.3

1.3 0.05 6.75 38.3 1.54 60.8 57.2

1.4 0.15 6.95 38.4 1.60 60.5 57.0

1.5 0.35 7.13 38.5 1.65 60.1 56.7

1.6 0.67 7.31 38.6 1.71 59.5 56.2

1.7 1.07 7.49 38.7 1.76 59.0 55.8

1.8 1.52 7.68 38.9 1.83 58.4 55.4

1.9 1.95 7.85 38.9 1.89 57.8 54.9

2.0 2.37 8.04 39.1 1.95 57.2 54.3

Application Note for Silicon RF Power Semiconductors

12/13

RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V

,φ

)

φ

)

V

- AN-UHF-098-B-

RD07MUS2B single-stage amplifier efficiency matching equivalent circuit (@f=400 to 470MHz)

Vgg

C12

10.5mm

C13

C2

8mm

W

21mm

R1

3.5mm

RD07MUS2B

1mm

2mm

C5

5.5mm

C6

4mm

1mm

C7

8mm

C4

C3

RF-in

C1

21mm

4.5mm

C8

Vdd

W

L2

2.5mm

C15

C14 C16

L1

2.5mm

C9

10mm

C11

1.5mm

C10

Note:Boardmaterial-Glass-EpoxySubstrate
Microstriplinewidth=1.3mm/50OHM,er:4.8,t=0.8mm
W:Linewidth=1.0mm

Parts Type Value Type name

Capacitor

Resistance R1 4.7K OHM CR1/10-472JB

Inductance

C1 100pF GRM2162C1H101GD01E
C2 8pF GRM2162C1H8R0DD01E
C3 29pF GRM2162C1H290GD01E
C4 12pF GRM2162C1H120GD01E
C5 54pF GRM2162C1H540GD01E
C6 18pF
C7 12pF GRM2162C1H120GD01E
C8 18pF

C9 8pF GRM2162C1H8R0DD01E
C10 4pF GRM2162C1H4R0DD01E
C11 100pF GRM2162C1H101GD01E
C12 22000pF
C13 1000pF
C14 1000pF
C15 22000pF
C16

L1

Diameter:0.23mm

L2

Diameter:0.23mm,

6.6nH Enameled wire 2Turns,

31.0nH Enameled wire 6Turns,

22µF A0603

1.66mm (the out side diameter

1.66mm (the out side diameter

GRM2162C1H180GD01E

GRM2162C1H180GD01E

GRM216R11H223KA01E
GRM216R11H102KA01E
GRM216R11H102KA01E
GRM216R11H223KA01E

2302S

2306C

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

Hokuriku Electric Industry Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

Yoneda Processing Place Co.,Ltd.

ender

RF-out

Application Note for Silicon RF Power Semiconductors

13/13