MITSUBISHI AN-UHF-097-C User Manual

APPLICATION NOTE

SUBJECT: RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

SUMMARY:

This application note shows the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 380 to 470 MHz band.

- Sample history : RD01MUS2 : Lot number “571”

Silicon RF Power Semiconductors

Document NO. AN-UHF-097-C Date : 13thMar. 2009 Rev. Date :13thJun. 2011 Prepared : S.Nakatsuka

S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by

MIYOSHI Electronics)

RD07MUS2B : Lot number “105AB-G”

- Evaluate conditions : @f=380 to 470MHz : Vdd=7.2V, Vgg=3.5V

- Results : Page 2-5. shows the typical Frequency characteristics data. Page 6-12. shows the typical Pout vs. Pin characteristics data. Page 13-15. shows the typical Pout vs. Vgg characteristics data. Page 16-18. shows the typical Pout vs. Vdd characteristics data. Page 19-20. shows the equivalent circuit.

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Frequency characteristics 1

@ Vgg Control (@Po=6.3W, 5W), Vdd=7.2V, Pi=30mW (=14.77dBm)

- AN-UHF-097-C-

2.5

2.0

1.5

Idd[A]

1.0

0.5

0.0 380 390 400 410 420 430 440 450 460 470

@Po=6.3W

@Po=5W

f[MHz]

3.5

3.0

2.5

Vgg[V]

2.0

1.5

1.0 380 390 400 410 420 430 440 450 460 470

@Po=6.3W

@Po=5W

f[MHz]

ηT[%]

380 390 400 410 420 430 440 450 460 470

Gp[dB]

@Po=6.3W

380 390 400 410 420 430 440 450 460 470

@Po=5W

f[MHz]

@Po=5W

f[MHz]

PAE[%]

380 390 400 410 420 430 440 450 460 470

@Po=5W

f[MHz]

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Frequency characteristics 1 data

@ Po=6.3W, Vdd=7.2V, Pi=30mW (=14.77dBm)

f Vgg Gp Idd ηT P.A.E. 2fo 3fo R.L.

[MHz] [V] [dB] [A] [%] [%] [dBc] [dBc] [dB]

380 3.16 23.3 1.97 44.8 44.6 -26.3 -56.5 -3.0 390 2.83 23.2 1.83 47.9 47.7 -25.7 -59.0 -3.4 400 2.62 23.2 1.72 51.0 50.7 -24.8 -59.0 -4.0 410 2.41 23.2 1.61 54.4 54.2 -23.0 -58.3 -5.1 420 2.32 23.3 1.53 57.4 57.2 -21.5 -61.0 -7.0 430 2.44 23.3 1.52 58.2 58.0 -24.2 -61.5 -8.6 440 2.60 23.2 1.47 59.6 59.3 -29.7 -58.3 -8.1 450 2.78 23.2 1.42 61.1 60.8 -35.3 -58.2 -7.8 460 2.98 23.2 1.41 62.3 62.0 -39.3 -56.8 -8.0 470 3.20 23.3 1.40 62.8 62.5 -42.8 -58.2 -8.3

- AN-UHF-097-C-

@ Po=5W, Vdd=7.2V, Pi=30mW (=14.77dBm)

f Vgg Gp Idd ηT P.A.E. 2fo 3fo R.L.

[MHz] [V] [dB] [A] [%] [%] [dBc] [dBc] [dB]

380 2.92 22.3 1.67 42.0 41.7 -21.3 -38.7 -3.1 390 2.67 22.2 1.55 44.5 44.2 -21.0 -54.3 -3.4 400 2.48 22.2 1.46 47.4 47.1 -20.5 -53.7 -4.0 410 2.29 22.3 1.38 51.0 50.7 -19.8 -55.7 -4.8 420 2.15 22.2 1.30 53.9 53.5 -17.8 -57.2 -6.2 430 2.23 22.2 1.29 54.0 53.7 -20.7 -57.2 -7.9 440 2.41 22.3 1.27 55.6 55.3 -27.0 -58.3 -7.7 450 2.59 22.3 1.23 57.3 56.9 -32.7 -53.7 -7.5 460 2.75 22.3 1.20 58.4 58.0 -37.5 -55.5 -7.7 470 2.92 22.3 1.19 59.6 59.3 -41.7 -52.7 -8.1

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Frequency characteristics 2

@ Pin Control (@Po=6.3W, 5W), Vdd=7.2V, Vgg=3.5V (Idq=404mA)

- AN-UHF-097-C-

2.5

2.0

1.5

Idd[A]

1.0

0.5

0.0 380 390 400 410 420 430 440 450 460 470

@Po=6.3W

@Po=5W

f[MHz]

13.0

11.0

9.0

7.0

5.0

3.0

Pin[dBm]

1.0

-1.0

-3.0

-5.0 380 390 400 410 420 430 440 450 460 470

@Po=6.3W

@Po=5W

f[MHz]

ηT[%]

@Po=5W

380 390 400 410 420 430 440 450 460 470

f[MHz]

Gp[dB]

380 390 400 410 420 430 440 450 460 470

@Po=6.3W

f[MHz]

@Po=5W

PAE[%]

380 390 400 410 420 430 440 450 460 470

@Po=5W

f[MHz]

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Frequency characteristics 2 data

@ Po=6.3W, Vdd=7.2V, Vgg=3.5V (Idq=490mA)

f Pin Pin Gp Idd ηT P.A.E. 2fo 3fo R.L.

[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [dB]

380 11.01 0.013 27.0 2.00 44.2 44.1 -29.0 -54.7 -3.3 390 7.62 0.006 30.4 1.90 46.4 46.4 -30.8 -53.2 -3.8 400 4.59 0.003 33.4 1.81 48.4 48.4 -30.3 -53.7 -4.9 410 2.20 0.002 35.8 1.74 50.7 50.7 -29.2 -52.5 -7.7 420 1.52 0.001 36.5 1.68 52.6 52.6 -27.2 -51.5 -14.9 430 2.89 0.002 35.1 1.63 53.6 53.6 -28.0 -54.0 -15.0 440 4.98 0.003 33.0 1.57 56.0 56.0 -33.0 -54.5 -10.7 450 6.99 0.005 31.0 1.50 58.2 58.1 -37.3 -52.5 -9.1 460 9.17 0.008 28.8 1.45 60.3 60.2 -40.3 -51.5 -8.7 470 11.47 0.014 26.5 1.42 61.8 61.7 -43.3 -54.0 -8.6

- AN-UHF-097-C-

@ Po=5W, Vdd=7.2V, Vgg=3.5V (Idq=490mA)

f Pin Pin Gp Idd ηT P.A.E. 2fo 3fo R.L.

[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [dB]

380 7.99 0.006 29.1 1.75 40.2 40.2 -25.5 -52.3 -3.3 390 5.20 0.003 31.8 1.67 42.0 42.0 -26.7 -53.0 -3.9 400 2.56 0.002 34.5 1.60 44.0 43.9 -26.5 -51.7 -4.8 410 0.08 0.001 36.9 1.53 45.3 45.3 -25.5 -51.7 -7.6 420 -0.61 0.001 37.6 1.48 47.3 47.3 -24.2 -48.7 -14.7 430 0.92 0.001 36.1 1.46 48.2 48.2 -26.2 -48.7 -14.8 440 2.77 0.002 34.2 1.39 49.7 49.7 -31.5 -51.7 -10.6 450 4.80 0.003 32.2 1.34 52.2 52.1 -36.7 -50.3 -9.1 460 6.60 0.005 30.4 1.29 54.4 54.4 -40.5 -47.7 -8.7 470 8.26 0.007 28.8 1.24 56.3 56.2 -44.2 -50.3 -8.7

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Pin=20mW

Frequency characteristics 3

@ Pin Control (@Pi=30mW, 20mW), Vdd=7.2V, Vgg=3.5V (Idq=490mA)

- AN-UHF-097-C-

10.0

9.5

9.0

8.5

8.0

7.5

Po[W]

7.0

6.5

6.0

5.5

5.0 380 390 400 410 420 430 440 450 460 470

f[MHz]

30 29 28 27 26 25

Gp[dB]

24 23 22 21 20

380 390 400 410 420 430 440 450 460 470

Pin=20mW

Pin=30mW

f[MHz]

Pin=30mW

40.0

39.5

39.0

38.5

Po[dBm]

38.0

37.5

37.0 380 390 400 410 420 430 440 450 460 470

2.6

2.4

2.2

2.0

Id[A]

1.8

1.6

1.4

1.2

380 390 400 410 420 430 440 450 460 470

Pin=20mW

f[MHz]

Pin=30mW

f[MHz]

Pin=30mW

ηT[%]

380 390 400 410 420 430 440 450 460 470

f[MHz]

Pin=30mW

Pin=20mW

P.A.E.[%]

380 390 400 410 420 430 440 450 460 470

f[MHz]

Pin=30mW

Pin=20mW

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Frequency characteristics 3 data

@ Pi=30mW, Vdd=7.2V, Vgg=3.5V (Idq=490mA)

f Po Po Gp Idd ηd P.A.E. 2fo 3fo R.L.

[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [-dB]

370 38.49 7.1 23.7 2.28 43.0 42.8 -27.0 -58.0 -3.0 380 38.86 7.7 24.1 2.30 46.5 46.3 -32.7 -58.8 -3.0 390 39.47 8.9 24.7 2.39 51.3 51.2 -37.3 -60.5 -3.6 400 39.67 9.3 24.9 2.33 55.2 55.0 -39.2 -60.5 -5.9 410 39.77 9.5 25.0 2.25 58.6 58.4 -33.3 -58.0 -8.8 420 39.77 9.5 25.0 2.16 61.1 60.9 -28.0 -61.7 -12.7 430 39.77 9.5 25.0 2.08 63.4 63.2 -27.5 -61.7 -14.0 440 39.69 9.3 24.9 1.99 64.9 64.7 -31.5 -63.3 -10.7 450 39.41 8.7 24.7 1.87 64.8 64.6 -35.5 -61.3 -8.9 460 39.02 8.0 24.3 1.72 64.3 64.0 -38.8 -59.8 -8.5 470 38.57 7.2 23.8 1.58 63.3 63.1 -42.0 -56.0 -8.6 480 38.09 6.4 23.3 1.44 62.3 62.0 -44.8 -55.8 -8.8

- AN-UHF-097-C-

@ Pi=20mW, Vdd=7.2V, Vgg=3.5V (Idq=490mA)

f Po Po Gp Idd ηd P.A.E. 2fo 3fo R.L.

[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [-dB]

370 38.14 6.5 25.1 2.15 42.1 41.9 -27.2 -55.8 -3.0 380 38.58 7.2 25.5 2.18 45.9 45.8 -31.0 -57.3 -3.1 390 39.31 8.5 26.3 2.32 51.0 50.8 -38.3 -60.7 -3.5 400 39.61 9.1 26.6 2.30 55.0 54.9 -40.0 -62.0 -5.6 410 39.72 9.4 26.7 2.23 58.4 58.3 -33.8 -62.0 -9.3 420 39.72 9.4 26.7 2.14 60.7 60.6 -28.2 -60.7 -14.8 430 39.69 9.3 26.7 2.06 62.8 62.7 -27.5 -60.7 -14.2 440 39.55 9.0 26.5 1.95 64.2 64.1 -31.7 -60.7 -10.3 450 39.20 8.3 26.2 1.80 64.2 64.0 -35.8 -59.5 -8.9 460 38.76 7.5 25.8 1.64 63.7 63.5 -39.2 -58.8 -8.6 470 38.28 6.7 25.2 1.49 62.7 62.5 -42.2 -56.7 -8.6 480 37.78 6.0 24.8 1.35 61.6 61.4 -45.8 -56.7 -8.8

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=470MHz

Pout vs. Pin characteristics

@ Vdd=7.2V, Vgg=3.5V (Idq=490mA), f=380MHz, f=400MHz, 435MHz, 470MHz

- AN-UHF-097-C-

Pout[W]

0.00 0.02 0.04 0.06 0.08 0.10

Gp[dB]

-10.0 -5.0 0.0 5.0 10.0 15.0 20.0

Pin[W]

Pin[dBm]

Pout[dBm]

-10.0 -5.0 0.0 5.0 10.0 15.0 20.0

Idd[A]

-10.0 -5.0 0.0 5.0 10.0 15.0 20.0

Pin[dBm]

ηd[%]

-10.0 -5.0 0.0 5.0 10.0 15.0 20.0 Pin[dBm]

ηadd[%]

@f=435MHz

-10.0 -5.0 0.0 5.0 10.0 15.0 20.0 Pin[dBm]

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

- AN-UHF-097-C-

Pout vs. Pin characteristics data

@ f=380MHz, Vgg=3.5V (Idq=490mA)

Vdd Pin Pin Po Po Gp Idd ηd P.A.E. R.L.

[V] [dBm] [W] [dBm] [W] [dB] [A] [%] [%] [-dB]

7.20 -10.07 0.00 21.35 0.14 31.43 0.54 3.5 3.5 -3.0

7.20 -8.99 0.00 22.35 0.17 31.34 0.55 4.3 4.3 -3.0

7.20 -7.98 0.00 23.31 0.21 31.29 0.57 5.2 5.2 -3.1

7.20 -7.01 0.00 24.22 0.26 31.24 0.59 6.2 6.2 -3.5

7.20 -6.00 0.00 25.17 0.33 31.17 0.61 7.4 7.4 -3.2

7.20 -5.01 0.00 26.08 0.41 31.09 0.64 8.8 8.8 -3.4

7.20 -3.99 0.00 27.04 0.51 31.03 0.68 10.4 10.3 -3.4

7.20 -3.01 0.00 27.96 0.62 30.96 0.72 12.0 12.0 -3.3

7.20 -2.01 0.00 28.88 0.77 30.89 0.77 13.9 13.9 -3.3

7.20 -1.00 0.00 29.82 0.96 30.82 0.83 16.0 16.0 -3.4

7.20 -0.01 0.00 30.75 1.19 30.76 0.90 18.3 18.2 -3.4

7.20 1.01 0.00 31.71 1.48 30.70 0.99 20.9 20.9 -3.3

7.20 2.00 0.00 32.63 1.83 30.63 1.08 23.7 23.6 -3.4

7.20 2.96 0.00 33.52 2.25 30.55 1.18 26.6 26.5 -3.3

7.21 4.02 0.00 34.46 2.79 30.44 1.30 29.9 29.9 -3.4

7.21 4.99 0.00 35.26 3.36 30.27 1.42 32.9 32.9 -3.3

7.21 5.99 0.00 35.98 3.96 29.99 1.54 35.8 35.8 -3.3

7.21 6.99 0.01 36.59 4.56 29.60 1.65 38.3 38.3 -3.4

7.21 8.01 0.01 37.09 5.12 29.08 1.76 40.5 40.4 -3.4

7.21 9.04 0.01 37.51 5.64 28.48 1.86 42.2 42.1 -3.4

7.21 9.94 0.01 37.87 6.12 27.93 1.95 43.6 43.5 -3.3

7.21 11.03 0.01 38.15 6.53 27.12 2.03 44.6 44.5 -3.3

7.21 12.01 0.02 38.37 6.87 26.36 2.10 45.4 45.2 -3.2

7.21 12.96 0.02 38.56 7.17 25.60 2.17 45.9 45.7 -3.1

7.21 13.99 0.03 38.73 7.46 24.74 2.24 46.2 46.1 -3.1

7.21 15.02 0.03 38.86 7.69 23.84 2.30 46.4 46.2 -3.1

7.21 15.98 0.04 38.97 7.89 22.99 2.36 46.4 46.2 -3.1

7.21 16.98 0.05 39.07 8.07 22.09 2.41 46.4 46.1 -3.1

7.21 18.08 0.06 39.15 8.21 21.06 2.46 46.3 45.9 -3.1

7.21 18.98 0.08 39.19 8.30 20.21 2.50 46.1 45.7 -3.2

7.21 20.02 0.10 39.22 8.36 19.20 2.52 46.1 45.6 -3.3

Application Note for Silicon RF Power Semiconductors

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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@ f=400MHz, Vgg=3.5V (Idq=490mA)

Vdd Pin Pin Po Po Gp Idd ηd P.A.E. R.L.

[V] [dBm] [W] [dBm] [W] [dB] [A] [%] [%] [-dB]

7.20 -9.99 0.00 25.69 0.37 35.67 0.61 8.4 8.4 -3.9

7.20 -9.03 0.00 26.61 0.46 35.64 0.64 10.0 10.0 -6.3

7.20 -8.02 0.00 27.54 0.57 35.57 0.67 11.7 11.7 -4.0

7.20 -7.03 0.00 28.48 0.70 35.51 0.71 13.7 13.7 -3.9

7.20 -6.03 0.00 29.41 0.87 35.44 0.76 15.9 15.9 -4.2

7.20 -5.02 0.00 30.38 1.09 35.40 0.82 18.4 18.4 -4.4

7.20 -4.03 0.00 31.34 1.36 35.37 0.89 21.2 21.2 -4.3

7.20 -3.06 0.00 32.29 1.69 35.35 0.97 24.2 24.2 -4.4

7.20 -1.98 0.00 33.33 2.15 35.31 1.08 27.8 27.8 -4.5

7.20 -1.04 0.00 34.19 2.63 35.23 1.17 31.2 31.2 -4.5

7.21 0.00 0.00 35.12 3.25 35.12 1.29 35.0 35.0 -4.6

7.21 0.96 0.00 35.93 3.91 34.96 1.41 38.5 38.5 -4.7

7.21 2.02 0.00 36.70 4.67 34.68 1.54 42.2 42.2 -4.8

7.21 3.01 0.00 37.29 5.36 34.28 1.65 45.0 45.0 -4.8

7.21 4.01 0.00 37.78 6.00 33.77 1.76 47.4 47.4 -5.0

7.21 4.99 0.00 38.24 6.66 33.25 1.87 49.5 49.5 -5.2

7.21 6.00 0.00 38.61 7.25 32.61 1.96 51.3 51.2 -5.1

7.21 6.98 0.00 38.87 7.71 31.89 2.04 52.5 52.4 -5.1

7.21 8.02 0.01 39.10 8.13 31.08 2.11 53.4 53.3 -5.0

7.21 8.98 0.01 39.31 8.52 30.32 2.18 54.2 54.1 -4.9

7.21 10.19 0.01 39.47 8.86 29.28 2.25 54.7 54.6 -5.1

7.21 10.94 0.01 39.53 8.98 28.59 2.27 54.9 54.8 -5.1

7.21 11.97 0.02 39.58 9.08 27.61 2.29 55.0 54.9 -5.4

7.21 12.95 0.02 39.61 9.15 26.66 2.30 55.1 55.0 -5.6

7.21 13.95 0.02 39.64 9.20 25.69 2.32 55.1 55.0 -5.8

7.21 15.00 0.03 39.66 9.24 24.66 2.33 55.1 54.9 -5.9

7.21 16.00 0.04 39.68 9.29 23.68 2.34 55.1 54.8 -6.0

7.21 17.01 0.05 39.70 9.34 22.69 2.35 55.0 54.7 -5.9

7.21 18.02 0.06 39.72 9.37 21.70 2.36 55.0 54.7 -5.9

7.21 19.01 0.08 39.74 9.42 20.73 2.38 55.0 54.6 -5.9

7.21 20.00 0.10 39.75 9.45 19.76 2.38 55.0 54.4 -5.8

- AN-UHF-097-C-

Application Note for Silicon RF Power Semiconductors

10/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@ f=435MHz, Vgg=3.5V (Idq=490mA)

Vdd Pin Pin Po Po Gp Idd ηd P.A.E. R.L.

[V] [dBm] [W] [dBm] [W] [dB] [A] [%] [%] [-dB]

7.20 -9.98 0.00 26.88 0.49 36.85 0.61 11.1 11.1 -14.9

7.20 -8.99 0.00 27.84 0.61 36.83 0.64 13.2 13.2 -13.5

7.20 -8.04 0.00 28.75 0.75 36.79 0.68 15.4 15.4 -13.5

7.20 -6.99 0.00 29.76 0.95 36.75 0.72 18.2 18.2 -13.5

7.20 -5.99 0.00 30.73 1.18 36.72 0.78 21.1 21.1 -13.8

7.20 -5.01 0.00 31.68 1.47 36.69 0.84 24.3 24.3 -14.6

7.20 -4.03 0.00 32.61 1.83 36.64 0.91 27.8 27.8 -14.6

7.20 -3.00 0.00 33.58 2.28 36.58 1.00 31.7 31.7 -14.7

7.20 -2.03 0.00 34.43 2.78 36.47 1.09 35.5 35.5 -14.8

7.20 -1.03 0.00 35.26 3.36 36.30 1.18 39.5 39.5 -12.7

7.21 -0.01 0.00 36.03 4.01 36.04 1.28 43.5 43.5 -12.6

7.21 1.00 0.00 36.70 4.68 35.70 1.38 47.1 47.1 -12.4

7.21 2.00 0.00 37.25 5.31 35.26 1.46 50.4 50.4 -12.5

7.21 3.01 0.00 37.76 5.97 34.74 1.55 53.3 53.3 -12.3

7.21 4.02 0.00 38.02 6.34 34.00 1.60 54.9 54.9 -12.3

7.21 5.05 0.00 38.32 6.79 33.26 1.66 56.7 56.7 -12.2

7.21 6.00 0.00 38.54 7.15 32.55 1.71 57.9 57.9 -11.9

7.21 7.01 0.01 38.77 7.53 31.76 1.77 59.2 59.2 -11.7

7.21 8.00 0.01 38.99 7.93 30.99 1.82 60.5 60.4 -11.5

7.21 9.02 0.01 39.19 8.30 30.17 1.87 61.5 61.5 -11.3

7.21 10.02 0.01 39.36 8.63 29.34 1.92 62.4 62.3 -11.3

7.21 10.95 0.01 39.49 8.88 28.53 1.96 63.1 63.0 -11.3

7.21 12.02 0.02 39.59 9.10 27.57 1.99 63.5 63.4 -11.4

7.21 13.05 0.02 39.66 9.25 26.61 2.01 63.9 63.7 -11.7

7.21 14.01 0.03 39.72 9.37 25.70 2.03 64.1 63.9 -12.1

7.21 15.00 0.03 39.76 9.46 24.76 2.04 64.4 64.2 -12.5

7.21 16.00 0.04 39.79 9.53 23.79 2.05 64.6 64.4 -12.6

7.21 17.03 0.05 39.81 9.57 22.78 2.05 64.8 64.4 -12.4

7.21 18.00 0.06 39.82 9.60 21.82 2.05 64.9 64.5 -12.0

7.21 19.00 0.08 39.83 9.62 20.83 2.06 65.0 64.4 -11.5

7.21 19.99 0.10 39.84 9.64 19.85 2.06 65.1 64.4 -11.0

- AN-UHF-097-C-

Application Note for Silicon RF Power Semiconductors

11/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@ f=470MHz, Vgg=3.5V (Idq=404mA)

Vdd Pin Pin Po Po Gp Idd ηd P.A.E. R.L.

[V] [dBm] [W] [dBm] [W] [dB] [A] [%] [%] [-dB]

7.20 -10.01 0.00 21.06 0.13 31.07 0.52 3.4 3.4 -13.9

7.20 -9.05 0.00 22.04 0.16 31.08 0.52 4.3 4.3 -10.9

7.20 -8.00 0.00 23.01 0.20 31.01 0.53 5.3 5.3 -10.2

7.20 -7.01 0.00 24.00 0.25 31.01 0.54 6.5 6.5 -10.5

7.20 -6.02 0.00 24.94 0.31 30.96 0.55 7.9 7.9 -10.5

7.20 -5.02 0.00 25.92 0.39 30.94 0.56 9.7 9.7 -8.8

7.20 -4.01 0.00 26.89 0.49 30.91 0.58 11.7 11.7 -9.3

7.20 -3.03 0.00 27.84 0.61 30.87 0.60 14.1 14.1 -8.5

7.20 -1.96 0.00 28.87 0.77 30.83 0.63 17.0 17.0 -8.6

7.20 -0.98 0.00 29.79 0.95 30.78 0.66 20.1 20.1 -8.9

7.20 0.04 0.00 30.75 1.19 30.72 0.70 23.6 23.6 -8.7

7.20 0.94 0.00 31.64 1.46 30.69 0.74 27.2 27.2 -8.8

7.20 2.04 0.00 32.62 1.83 30.58 0.80 31.6 31.6 -8.7

7.20 2.99 0.00 33.49 2.23 30.50 0.86 35.9 35.9 -8.8

7.20 4.00 0.00 34.37 2.73 30.37 0.94 40.6 40.5 -8.8

7.20 4.98 0.00 35.15 3.27 30.17 1.01 44.9 44.9 -8.7

7.20 6.01 0.00 35.87 3.87 29.86 1.09 49.2 49.2 -8.7

7.20 6.97 0.00 36.44 4.41 29.47 1.16 52.7 52.7 -8.7

7.21 7.94 0.01 36.92 4.91 28.98 1.23 55.7 55.6 -8.7

7.21 8.92 0.01 37.30 5.37 28.38 1.28 58.1 58.0 -8.7

7.21 10.02 0.01 37.63 5.80 27.61 1.34 60.0 59.9 -8.7

7.21 10.98 0.01 37.90 6.16 26.92 1.39 61.4 61.2 -8.6

7.21 11.99 0.02 38.12 6.49 26.13 1.44 62.4 62.2 -8.6

7.21 12.94 0.02 38.29 6.75 25.36 1.49 63.0 62.8 -8.6

7.21 13.99 0.03 38.46 7.01 24.47 1.54 63.3 63.1 -8.6

7.21 15.01 0.03 38.59 7.23 23.58 1.59 63.3 63.0 -8.6

7.21 16.02 0.04 38.71 7.43 22.69 1.63 63.1 62.8 -8.5

7.21 17.00 0.05 38.81 7.61 21.81 1.68 62.9 62.5 -8.5

7.21 18.01 0.06 38.90 7.77 20.90 1.73 62.5 62.0 -8.5

7.21 19.00 0.08 38.98 7.91 19.98 1.77 62.1 61.4 -8.5

7.21 19.99 0.10 39.04 8.02 19.05 1.81 61.5 60.8 -8.6

- AN-UHF-097-C-

Application Note for Silicon RF Power Semiconductors

12/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MHz

@f=380MHz

@f=435MHz

@f=470MHz

Pout vs. Vgg characteristics

@ Vdd=7.2V, Pi=30mW (=14.77dBm), f=380MHz, f=400MHz, 435MHz, 470MHz

- AN-UHF-097-C-

Po[W]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgg[V]

3.0

2.5

2.0

1.5

Idd[V]

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgg[V]

ηd[%]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgg[V]

ηadd[%]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgg[V]

Application Note for Silicon RF Power Semiconductors

13/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Pout vs. Vgg characteristics data

@ f=380MHz, Vdd=7.2V, Pi=30mW (=14.77dBm)

Vgg Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.00 0.000 -36.49 0.00 -51.28 0.01 0.0 0.0 -3.3

1.20 0.000 -33.45 0.00 -48.34 0.01 0.0 0.0 -3.3

1.40 0.000 -29.93 0.00 -44.70 0.02 0.0 0.0 -3.2

1.60 0.000 -23.88 0.00 -38.64 0.02 0.0 0.0 -3.2

1.80 0.000 -8.43 0.00 -23.20 0.04 0.1 0.0 -3.2

2.00 0.000 9.97 0.01 -4.82 0.09 1.5 0.0 -3.2

2.20 0.003 20.75 0.12 6.00 0.23 7.2 5.4 -3.1

2.40 0.003 28.55 0.72 13.78 0.54 18.4 17.6 -3.1

2.60 0.010 34.11 2.58 19.36 1.08 33.0 32.7 -3.0

2.80 0.033 36.39 4.35 21.60 1.51 40.2 39.9 -3.0

3.00 0.088 37.53 5.67 22.78 1.81 43.6 43.3 -2.9

3.20 0.198 38.22 6.64 23.46 2.04 45.3 45.1 -2.9

3.40 0.383 38.70 7.41 23.98 2.22 46.3 46.1 -2.9

3.60 0.648 39.04 8.02 24.22 2.38 46.7 46.6 -2.9

3.80 0.990 39.28 8.47 24.49 2.51 46.9 46.7 -3.0

4.00 1.393 39.46 8.84 24.70 2.61 46.9 46.8 -3.1

- AN-UHF-097-C-

@ f=400MHz, Vdd=7.2V,Pi=30mW (=14.77dBm)

Vgg Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.00 0.003 -36.21 0.00 -50.98 0.01 0.0 0.0 -3.9

1.20 0.000 -28.92 0.00 -43.69 0.01 0.0 0.0 -3.8

1.40 0.000 -22.80 0.00 -37.58 0.02 0.0 0.0 -3.8

1.60 0.000 -18.59 0.00 -33.36 0.03 0.0 0.0 -3.7

1.80 0.000 2.56 0.00 -12.19 0.06 0.5 0.0 -3.7

2.00 0.000 19.49 0.09 4.75 0.19 6.4 4.3 -3.7

2.20 0.003 31.33 1.36 16.57 0.69 27.2 26.6 -3.8

2.40 0.003 36.91 4.91 22.10 1.44 47.4 47.1 -3.9

2.60 0.010 38.22 6.65 23.42 1.77 52.0 51.8 -3.9

2.80 0.033 38.86 7.70 24.09 1.99 53.8 53.6 -4.1

3.00 0.088 39.20 8.32 24.43 2.11 54.6 54.4 -4.5

3.20 0.198 39.41 8.74 24.65 2.21 55.0 54.8 -5.0

3.40 0.383 39.59 9.10 24.81 2.29 55.1 55.0 -5.6

3.60 0.648 39.74 9.41 24.98 2.37 55.2 55.0 -6.1

3.80 0.988 39.87 9.70 25.08 2.44 55.2 55.0 -6.8

4.00 1.393 39.99 9.98 25.21 2.51 55.1 54.9 -7.4

Application Note for Silicon RF Power Semiconductors

14/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@ f=435MHz, Vdd=7.2V, Pi=30mW (=14.77dBm)

Vgg Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.00 0.003 -18.79 0.00 -33.55 0.01 0.0 0.0 -5.6

1.20 0.003 -11.76 0.00 -26.52 0.01 0.1 0.0 -5.7

1.40 0.000 17.92 0.06 3.17 0.12 7.5 3.9 -6.1

1.60 0.003 25.95 0.39 11.19 0.28 19.5 18.0 -6.6

1.80 0.000 30.69 1.17 15.88 0.53 31.0 30.2 -6.9

2.00 0.003 34.06 2.55 19.31 0.83 42.6 42.1 -7.2

2.20 0.003 35.98 3.96 21.18 1.10 50.1 49.7 -7.4

2.40 0.003 37.34 5.42 22.57 1.35 55.9 55.6 -7.7

2.60 0.010 38.25 6.69 23.49 1.55 59.7 59.5 -8.3

2.80 0.033 38.86 7.69 24.05 1.72 62.0 61.8 -9.0

3.00 0.088 39.25 8.42 24.46 1.84 63.4 63.1 -9.8

3.20 0.195 39.50 8.91 24.72 1.93 64.1 63.8 -10.8

3.40 0.380 39.68 9.30 24.91 2.01 64.3 64.1 -11.9

3.60 0.645 39.83 9.62 25.02 2.07 64.4 64.2 -12.8

3.80 0.983 39.95 9.89 25.20 2.15 63.9 63.8 -13.6

4.00 1.388 40.06 10.14 25.30 2.22 63.4 63.2 -14.1

- AN-UHF-097-C-

@ f=470MHz, Vdd=7.2V,Pi=30mW (=14.77dBm)

Vgg Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.00 0.003 -33.34 0.00 -48.06 0.01 0.0 0.0 -7.4

1.20 0.000 -23.72 0.00 -38.45 0.01 0.0 0.0 -7.3

1.40 0.003 -19.64 0.00 -34.39 0.01 0.0 0.0 -7.3

1.60 0.000 -16.19 0.00 -30.94 0.02 0.0 0.0 -7.3

1.80 0.000 -0.95 0.00 -15.70 0.04 0.3 0.0 -7.3

2.00 0.003 15.86 0.04 1.11 0.11 4.7 1.1 -7.4

2.20 0.003 25.22 0.33 10.47 0.28 16.6 15.1 -7.5

2.40 0.003 31.18 1.31 16.39 0.54 33.8 33.0 -7.7

2.60 0.010 34.68 2.93 19.90 0.83 48.9 48.4 -7.8

2.80 0.033 36.49 4.46 21.74 1.08 57.3 56.9 -7.9

3.00 0.088 37.49 5.61 22.75 1.27 61.4 61.0 -8.1

3.20 0.193 38.05 6.38 23.29 1.41 62.9 62.6 -8.3

3.40 0.378 38.43 6.96 23.64 1.53 63.4 63.1 -8.4

3.60 0.640 38.69 7.39 23.95 1.63 63.1 62.9 -8.5

3.80 0.980 38.89 7.75 24.14 1.72 62.4 62.2 -8.6

4.00 1.385 39.06 8.05 24.27 1.82 61.6 61.3 -8.7

Application Note for Silicon RF Power Semiconductors

15/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@f=400MH

@f=380MHz

@f=435MHz

@f=400MH

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MH

@f=380MHz

@f=435MHz

@f=470MHz

@f=400MH

@f=380MHz

@f=435MHz

@f=470MHz

Pout vs. Vdd characteristics

@ Vgg=3.5V, Pi=30mW (=14.77dBm), f=380MHz, f=400MHz, 435MHz, 470MHz

- AN-UHF-097-C-

Po[W]

0 1 2 3 4 5 6 7 8 9 10

ηd[%]

@f=470MHz

Vdd[V]

3.5

3.0

2.5

2.0

Idd[V]

1.5

1.0

0.5

0.0 0 1 2 3 4 5 6 7 8 9 10

Vdd[V]

ηadd[%]

0 1 2 3 4 5 6 7 8 9 10

Vdd[V]

0 1 2 3 4 5 6 7 8 9 10

Vdd[V]

Application Note for Silicon RF Power Semiconductors

16/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Pout vs. Vdd characteristics data

@ f=380MHz, Vgg=3.5V, Pi=30mW (=14.77dBm)

Vdd Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.5 0.400 25.6 0.4 10.9 0.60 40.4 37.1 -4.6

2.0 0.408 28.2 0.7 13.5 0.78 42.5 40.6 -4.4

2.5 0.418 30.3 1.1 15.5 0.97 43.6 42.4 -4.2

3.0 0.425 31.9 1.5 17.1 1.15 44.5 43.6 -3.8

3.5 0.433 33.2 2.1 18.4 1.32 45.0 44.3 -3.6

4.0 0.440 34.3 2.7 19.5 1.49 45.3 44.8 -3.4

4.5 0.448 35.3 3.4 20.5 1.64 45.6 45.2 -3.2

5.0 0.458 36.1 4.1 21.3 1.77 45.9 45.6 -3.1

5.5 0.465 36.9 4.8 22.1 1.91 46.1 45.8 -3.1

6.0 0.475 37.5 5.6 22.7 2.03 46.3 46.0 -3.0

6.5 0.483 38.1 6.5 23.3 2.14 46.4 46.2 -3.0

7.0 0.493 38.7 7.3 23.9 2.25 46.5 46.3 -3.0

7.5 0.503 39.2 8.2 24.3 2.36 46.4 46.3 -3.0

8.0 0.515 39.6 9.1 24.8 2.46 46.3 46.1 -3.0

8.5 0.525 40.0 10.0 25.3 2.56 46.1 46.0 -2.9

9.0 0.538 40.4 10.9 25.6 2.65 45.8 45.7 -3.0

9.5 0.550 40.7 11.9 26.0 2.74 45.5 45.4 -3.0

10.0 0.565 41.0 12.7 26.3 2.82 45.1 45.0 -3.1

- AN-UHF-097-C-

@ f=400MHz, Vgg=3.5V,Pi=30mW (=14.77dBm)

Vdd Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.5 0.400 26.0 0.4 11.2 0.56 46.9 43.4 -6.5

2.0 0.410 28.6 0.7 13.8 0.73 49.6 47.5 -6.5

2.5 0.418 30.6 1.1 15.8 0.90 50.9 49.6 -6.5

3.0 0.425 32.2 1.7 17.5 1.07 52.0 51.1 -6.4

3.5 0.433 33.6 2.3 18.8 1.23 52.8 52.1 -6.4

4.0 0.440 34.8 3.0 20.0 1.40 53.4 52.9 -6.3

4.5 0.450 35.8 3.8 21.0 1.55 53.8 53.4 -6.2

5.0 0.458 36.6 4.6 21.9 1.71 54.1 53.8 -6.1

5.5 0.465 37.5 5.6 22.7 1.86 54.5 54.2 -6.0

6.0 0.475 38.2 6.6 23.4 2.00 54.8 54.5 -6.0

6.5 0.485 38.8 7.6 24.1 2.14 54.9 54.7 -5.9

7.0 0.495 39.4 8.8 24.7 2.28 55.0 54.8 -5.8

7.5 0.503 40.0 10.0 25.2 2.41 55.1 54.9 -5.7

8.0 0.515 40.5 11.2 25.7 2.54 55.2 55.0 -5.6

8.5 0.525 41.0 12.5 26.2 2.67 55.1 55.0 -5.5

9.0 0.538 41.4 13.9 26.7 2.80 55.1 55.0 -5.4

9.5 0.550 41.8 15.3 27.1 2.92 54.9 54.8 -5.2

10.0 0.565 42.2 16.7 27.5 3.05 54.7 54.7 -5.1

Application Note for Silicon RF Power Semiconductors

17/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

@ f=435MHz, Vgg=3.5V, Pi=30mW (=14.77dBm)

Vdd Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.5 0.405 25.9 0.4 11.1 0.49 52.6 48.5 -9.8

2.0 0.413 28.5 0.7 13.7 0.63 56.2 53.8 -10.2

2.5 0.420 30.5 1.1 15.8 0.77 58.3 56.7 -10.7

3.0 0.428 32.2 1.6 17.3 0.91 60.1 59.0 -11.1

3.5 0.435 33.5 2.2 18.7 1.05 61.2 60.4 -11.5

4.0 0.443 34.7 3.0 19.9 1.19 62.1 61.5 -11.9

4.5 0.450 35.8 3.8 21.0 1.33 62.9 62.3 -12.2

5.0 0.458 36.7 4.6 21.9 1.46 63.4 63.0 -12.5

5.5 0.468 37.5 5.6 22.7 1.60 63.9 63.5 -12.6

6.0 0.475 38.2 6.7 23.5 1.73 64.1 63.8 -12.6

6.5 0.483 38.9 7.8 24.1 1.86 64.3 64.0 -12.6

7.0 0.493 39.5 9.0 24.8 1.99 64.3 64.1 -12.4

7.5 0.503 40.1 10.2 25.3 2.11 64.4 64.2 -12.3

8.0 0.513 40.6 11.5 25.8 2.23 64.3 64.1 -12.0

8.5 0.523 41.1 12.9 26.3 2.35 64.2 64.0 -11.8

9.0 0.535 41.5 14.2 26.8 2.47 64.2 64.0 -11.6

9.5 0.548 41.9 15.7 27.2 2.58 63.9 63.8 -11.4

10.0 0.560 42.3 17.2 27.5 2.69 63.7 63.6 -11.3

- AN-UHF-097-C-

@ f=470MHz, Vgg=3.5V,Pi=30mW (=14.77dBm)

Vdd Idq Po Po Gp Idd ηd P.A.E. R.L.

[V] [A] [dBm] [W] [dB] [A] [%] [%] [-dB]

1.5 0.403 25.0 0.3 10.3 0.43 49.0 44.4 -11.3

2.0 0.410 27.6 0.6 12.8 0.55 52.4 49.7 -10.6

2.5 0.418 29.6 0.9 14.9 0.67 54.6 52.8 -9.9

3.0 0.425 31.2 1.3 16.5 0.79 56.2 54.9 -9.3

3.5 0.433 32.6 1.8 17.9 0.91 57.2 56.2 -8.8

4.0 0.440 33.7 2.4 19.0 1.01 58.4 57.6 -8.6

4.5 0.448 34.7 3.0 20.0 1.11 59.6 59.0 -8.5

5.0 0.458 35.6 3.6 20.9 1.20 60.6 60.1 -8.5

5.5 0.465 36.4 4.4 21.7 1.29 61.4 61.0 -8.5

6.0 0.473 37.1 5.1 22.4 1.38 62.2 61.8 -8.5

6.5 0.483 37.7 5.9 23.0 1.46 62.7 62.4 -8.5

7.0 0.493 38.3 6.8 23.6 1.54 63.0 62.7 -8.5

7.5 0.500 38.9 7.7 24.1 1.62 63.3 63.0 -8.5

8.0 0.510 39.3 8.6 24.6 1.70 63.4 63.2 -8.5

8.5 0.523 39.8 9.6 25.0 1.77 63.4 63.2 -8.5

9.0 0.533 40.2 10.5 25.4 1.85 63.4 63.2 -8.5

9.5 0.545 40.6 11.5 25.8 1.92 63.1 63.0 -8.5

10.0 0.558 41.0 12.5 26.2 1.99 63.0 62.8 -8.5

Application Note for Silicon RF Power Semiconductors

18/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

Parts

Type

Value

Type name

C18

1000pF

GRM216R11H102KA01E

C19

10000pF

GRM216R11H103KA01E

C20

1000pF

GRM216R11H102KA01E

8.2nH(Chip Inductor)

8.0nH Enameled wire 2Turns,

Diameter:0.23mm,φ1.66mm (the out side diameter)

28.0nH Enameled wire 6Turns,

Diameter:0.23mm,φ1.66mm (the out side diameter)

8.0nH Enameled wire 2Turns,

Diameter:0.23mm,φ1.66mm (the out side diameter)

Murata Manufacturing Co., Ltd.

Vender

Equivalent circuit (@f=400 to 470MHz)

- AN-UHF-097-C-

RF-in

Capacitor

Vgg(=3.5V)

1.5mm

21mm

4mmL1

1.5mm

Note:Board material- Glass-Epoxy Substrate Micro strip line width=1.3mm/50ohm,er:4.8,t=0.8mm W:Line width=1.0mm

C14

C13

1mm

C17

C15

21mm

1mm

2.5mm

C16

4.5mm C53mm

C4 C7

4.5mm

21mm

7mm

1mm

C1 100pF GRM2162C1H101GD01E C2 12pF GRM2162C1H120GD01E C3 22pF GRM2162C1H220GD01E C4 8pF GRM2162C1H8R0DD01E C5 39pF GRM2162C1H390GD01E C6 20pF GRM2162C1H200GD01E C7 54pF

GRM2162C1H540GD01E C8 24pF GRM2162C1H240GD01E C9 20pF GRM2162C1H200GD01E

C10 3pF GRM2163C1H3R0CD01E C11 3pF GRM2163C1H3R0CD01E C12 100pF C13 1000pF

GRM2162C1H101GD01E

GRM216R11H102KA01E Murata Manufacturing Co., Ltd.

C18

C19

RD07MUS2B

1.5mm

Vdd(=7.2V)

C21

C20 C22

21mm

4.5mm 5mm

4.5mm

3.5mm

Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd.

C14 10000pF GRM216R11H103KA01E Murata Manufacturing Co., Ltd. C15 1000pF C16 10000pF

GRM216R11H102KA01E GRM216R11H103KA01E

Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd.

C17 22μF A0603 NICHICON CORPORATION

0.5mm

C12RD01MUS2

16mm

C10

RF-out

2mm

C11

Resistance

Inductance

Murata Manufacturing Co., Ltd.

C21 10000pF GRM216R11H103KA01E C22

22μF A0603

R1 12 OHM RPC05-120

Murata Manufacturing Co., Ltd.

NICHICON CORPORATION

Taiyosha Electric Co.,Ltd. R2 1K OHM RPC10-102 Taiyosha Electric Co.,Ltd. R3 56K OHM RPC05-563 Taiyosha Electric Co.,Ltd. R4 20K OHM RPC05-203 Taiyosha Electric Co.,Ltd. R5 4.7KOHM CR1/10-472JB Hokuriku Electric Industry Co.,Ltd. R6 15K OHM RPC05-153 Taiyosha Electric Co.,Ltd. R7 20K OHM RPC05-203 Taiyosha Electric Co.,Ltd.

Murata Manufacturing Co., Ltd.

L2 L3 L4 L5

28.0nH Enameled wire 6Turns,

LQG11A8N2S00

2302S Yoneda Processing Place Co.,Ltd. 2306C Yoneda Processing Place Co.,Ltd. 2302S Yoneda Processing Place Co.,Ltd. 2306C Yoneda Processing Place Co.,Ltd.

Application Note for Silicon RF Power Semiconductors

19/20

RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)

C11

C10

C13R7R6

C18

C15

L3C3C4C5C6C7R5L5C8

C20

- AN-UHF-097-C-

GND

RF-in

Vgg(=3.5V)

Vdd Vdd

VggVgg

Vdd(=7.2V)

GND

RF-out

( Unit ; mm)

C17

Vgg VggVdd Vdd

RF-in

C1C2L1R2R1

1.5

411

C14

RD01MUS2

C16

2.4

1.3

2.5

4.5

0.8

18-Φ0.5

1.0

0.70.7

4.5

C19

0.8

1.5

C22

C21

4.9

1.3

0.70.7

0.8

13-Φ0.5

0.90.9

RF-out

RD07MUS2B

C12

MITSUBISHI RF Power Amplifier

4.5

3.5

0.5

Application Note for Silicon RF Power Semiconductors

20/20

MITSUBISHI AN-UHF-097-C User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual