MITSUBISHI AN-UHF-097-C User Manual
APPLICATION NOTE
SUBJECT: RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
SUMMARY:
This application note shows the RF wide band characteristics data
(Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 380 to 470 MHz band.
- Sample history :
RD01MUS2 : Lot number “571”
Silicon RF Power Semiconductors
Document NO. AN-UHF-097-C
Date : 13thMar. 2009
Rev. Date :13thJun. 2011
Prepared : S.Nakatsuka
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
MIYOSHI Electronics)
RD07MUS2B : Lot number “105AB-G”
- Evaluate conditions :
@f=380 to 470MHz : Vdd=7.2V, Vgg=3.5V
- Results :
Page 2-5. shows the typical Frequency characteristics data.
Page 6-12. shows the typical Pout vs. Pin characteristics data.
Page 13-15. shows the typical Pout vs. Vgg characteristics data.
Page 16-18. shows the typical Pout vs. Vdd characteristics data.
Page 19-20. shows the equivalent circuit.
Application Note for Silicon RF Power Semiconductors
1/20
RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
Frequency characteristics 1
@ Vgg Control (@Po=6.3W, 5W), Vdd=7.2V, Pi=30mW (=14.77dBm)
- AN-UHF-097-C-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
380 390 400 410 420 430 440 450 460 470
65
@Po=6.3W
60
55
50
@Po=6.3W
@Po=5W
f[MHz]
3.5
3.0
2.5
Vgg[V]
2.0
1.5
1.0
380 390 400 410 420 430 440 450 460 470
65
@Po=6.3W
60
55
50
@Po=6.3W
@Po=5W
f[MHz]
ηT[%]
45
40
35
30
380 390 400 410 420 430 440 450 460 470
30
29
28
27
26
25
Gp[dB]
24
23
22
21
20
@Po=6.3W
380 390 400 410 420 430 440 450 460 470
@Po=5W
f[MHz]
@Po=5W
f[MHz]
PAE[%]
45
40
35
30
380 390 400 410 420 430 440 450 460 470
@Po=5W
f[MHz]
Application Note for Silicon RF Power Semiconductors
2/20
RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
Frequency characteristics 1 data
@ Po=6.3W, Vdd=7.2V, Pi=30mW (=14.77dBm)
f Vgg Gp Idd ηT P.A.E. 2fo 3fo R.L.
[MHz] [V] [dB] [A] [%] [%] [dBc] [dBc] [dB]
380 3.16 23.3 1.97 44.8 44.6 -26.3 -56.5 -3.0
390 2.83 23.2 1.83 47.9 47.7 -25.7 -59.0 -3.4
400 2.62 23.2 1.72 51.0 50.7 -24.8 -59.0 -4.0
410 2.41 23.2 1.61 54.4 54.2 -23.0 -58.3 -5.1
420 2.32 23.3 1.53 57.4 57.2 -21.5 -61.0 -7.0
430 2.44 23.3 1.52 58.2 58.0 -24.2 -61.5 -8.6
440 2.60 23.2 1.47 59.6 59.3 -29.7 -58.3 -8.1
450 2.78 23.2 1.42 61.1 60.8 -35.3 -58.2 -7.8
460 2.98 23.2 1.41 62.3 62.0 -39.3 -56.8 -8.0
470 3.20 23.3 1.40 62.8 62.5 -42.8 -58.2 -8.3
- AN-UHF-097-C-
@ Po=5W, Vdd=7.2V, Pi=30mW (=14.77dBm)
f Vgg Gp Idd ηT P.A.E. 2fo 3fo R.L.
[MHz] [V] [dB] [A] [%] [%] [dBc] [dBc] [dB]
380 2.92 22.3 1.67 42.0 41.7 -21.3 -38.7 -3.1
390 2.67 22.2 1.55 44.5 44.2 -21.0 -54.3 -3.4
400 2.48 22.2 1.46 47.4 47.1 -20.5 -53.7 -4.0
410 2.29 22.3 1.38 51.0 50.7 -19.8 -55.7 -4.8
420 2.15 22.2 1.30 53.9 53.5 -17.8 -57.2 -6.2
430 2.23 22.2 1.29 54.0 53.7 -20.7 -57.2 -7.9
440 2.41 22.3 1.27 55.6 55.3 -27.0 -58.3 -7.7
450 2.59 22.3 1.23 57.3 56.9 -32.7 -53.7 -7.5
460 2.75 22.3 1.20 58.4 58.0 -37.5 -55.5 -7.7
470 2.92 22.3 1.19 59.6 59.3 -41.7 -52.7 -8.1
Application Note for Silicon RF Power Semiconductors
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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
Frequency characteristics 2
@ Pin Control (@Po=6.3W, 5W), Vdd=7.2V, Vgg=3.5V (Idq=404mA)
- AN-UHF-097-C-
2.5
2.0
1.5
Idd[A]
1.0
0.5
0.0
380 390 400 410 420 430 440 450 460 470
65
60
55
50
@Po=6.3W
@Po=6.3W
@Po=5W
f[MHz]
13.0
11.0
9.0
7.0
5.0
3.0
Pin[dBm]
1.0
-1.0
-3.0
-5.0
380 390 400 410 420 430 440 450 460 470
65
60
55
50
@Po=6.3W
@Po=6.3W
@Po=5W
f[MHz]
ηT[%]
45
@Po=5W
40
35
30
380 390 400 410 420 430 440 450 460 470
f[MHz]
40
38
36
34
32
30
Gp[dB]
28
26
24
22
20
380 390 400 410 420 430 440 450 460 470
@Po=6.3W
f[MHz]
@Po=5W
PAE[%]
45
40
35
30
380 390 400 410 420 430 440 450 460 470
@Po=5W
f[MHz]
Application Note for Silicon RF Power Semiconductors
4/20
RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
Frequency characteristics 2 data
@ Po=6.3W, Vdd=7.2V, Vgg=3.5V (Idq=490mA)
f Pin Pin Gp Idd ηT P.A.E. 2fo 3fo R.L.
[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [dB]
380 11.01 0.013 27.0 2.00 44.2 44.1 -29.0 -54.7 -3.3
390 7.62 0.006 30.4 1.90 46.4 46.4 -30.8 -53.2 -3.8
400 4.59 0.003 33.4 1.81 48.4 48.4 -30.3 -53.7 -4.9
410 2.20 0.002 35.8 1.74 50.7 50.7 -29.2 -52.5 -7.7
420 1.52 0.001 36.5 1.68 52.6 52.6 -27.2 -51.5 -14.9
430 2.89 0.002 35.1 1.63 53.6 53.6 -28.0 -54.0 -15.0
440 4.98 0.003 33.0 1.57 56.0 56.0 -33.0 -54.5 -10.7
450 6.99 0.005 31.0 1.50 58.2 58.1 -37.3 -52.5 -9.1
460 9.17 0.008 28.8 1.45 60.3 60.2 -40.3 -51.5 -8.7
470 11.47 0.014 26.5 1.42 61.8 61.7 -43.3 -54.0 -8.6
- AN-UHF-097-C-
@ Po=5W, Vdd=7.2V, Vgg=3.5V (Idq=490mA)
f Pin Pin Gp Idd ηT P.A.E. 2fo 3fo R.L.
[MHz] [dBm] [W] [dB] [A] [%] [%] [dBc] [dBc] [dB]
380 7.99 0.006 29.1 1.75 40.2 40.2 -25.5 -52.3 -3.3
390 5.20 0.003 31.8 1.67 42.0 42.0 -26.7 -53.0 -3.9
400 2.56 0.002 34.5 1.60 44.0 43.9 -26.5 -51.7 -4.8
410 0.08 0.001 36.9 1.53 45.3 45.3 -25.5 -51.7 -7.6
420 -0.61 0.001 37.6 1.48 47.3 47.3 -24.2 -48.7 -14.7
430 0.92 0.001 36.1 1.46 48.2 48.2 -26.2 -48.7 -14.8
440 2.77 0.002 34.2 1.39 49.7 49.7 -31.5 -51.7 -10.6
450 4.80 0.003 32.2 1.34 52.2 52.1 -36.7 -50.3 -9.1
460 6.60 0.005 30.4 1.29 54.4 54.4 -40.5 -47.7 -8.7
470 8.26 0.007 28.8 1.24 56.3 56.2 -44.2 -50.3 -8.7
Application Note for Silicon RF Power Semiconductors
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RD01MUS2 & RD07MUS2B RF characteristics data at 380 to 470MHz. (Vdd=7.2V)
Pin=20mW
Frequency characteristics 3
@ Pin Control (@Pi=30mW, 20mW), Vdd=7.2V, Vgg=3.5V (Idq=490mA)
- AN-UHF-097-C-
10.0
9.5
9.0
8.5
8.0
7.5
Po[W]
7.0
6.5
6.0
5.5
5.0
380 390 400 410 420 430 440 450 460 470
f[MHz]
30
29
28
27
26
25
Gp[dB]
24
23
22
21
20
380 390 400 410 420 430 440 450 460 470
Pin=20mW
Pin=30mW
f[MHz]
Pin=30mW
40.0
39.5
39.0
38.5
Po[dBm]
38.0
37.5
37.0
380 390 400 410 420 430 440 450 460 470
2.6
2.4
2.2
2.0
Id[A]
1.8
1.6
1.4
1.2
380 390 400 410 420 430 440 450 460 470
Pin=20mW
Pin=20mW
f[MHz]
Pin=30mW
f[MHz]
Pin=30mW
70
65
60
55
ηT[%]
50
45
40
380 390 400 410 420 430 440 450 460 470
f[MHz]
Pin=30mW
Pin=20mW
70
65
60
55
P.A.E.[%]
50
45
40
380 390 400 410 420 430 440 450 460 470
f[MHz]
Pin=30mW
Pin=20mW
Application Note for Silicon RF Power Semiconductors
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