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AN-UHF-087-A
User Manual
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MITSUBISHI AN-UHF-087-A User Manual

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APPLICATION NOTE
SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz
SUMMARY:
This application note shows the RF Wide band characteristics data (Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 450-527 MHz Band.
- Sample history : RD01MUS2: Lot number “571”
Silicon RF Power Semiconductors
Document NO. AN-UHF-087-A Date : 9 Rev. Date :22 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa (Taking charge of Silicon RF by
Oct. 2007
Jun. 2010
MIYOSHI Electronics)
- Evaluate conditions :
RD01MUS2 @f=450-527MHz : Vds=7.2V, Idq=50mA (Vgs adjust)
- Results : Page 2 shows the typical RF characteristics (Pout vs. Frequency characteristics) data. Page 3-4 shows the typical RF characteristics (Pout vs. Pin characteristics) data. Page 5 shows the Equivalent Circuit.
Application Note for Silicon RF Power Semiconductors
1/5
RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz
Pin=30mW, Vds=7.2V, Idq=50mA (V
Adj
)
P
Adj
W
RD01MUS2 Single-Stage amplifier Frequency Characteristics f=450-527MHz.
- AN-UHF-087-A-
fPoutIdsEdRL
(MH z ) (W) (A) (% ) (dB ) (-) (dB ) (dB )
450 1.00 0.30 49.2 4.8 3.7 -25.0 -61.2 460 1.29 0.33 56.9 6.0 3.0 -26.9 -57.2 470 1.30 0.32 58.7 7.8 2.4 -27.5 -54.5 480 1.36 0.32 61.6 9.5 2.0 -28.4 -48.7 490 1.39 0.32 63.3 9.7 2.0 -29.1 -45.5 500 1.27 0.30 62.3 8.0 2.3 -30.1 -45.1 510 1.23 0.29 62.6 5.8 3.1 -30.4 -43.3 520 1.10 0.26 61.5 4.2 4.2 -30.9 -42.9 530 0.81 0.22 54.8 3.1 5.6 -32.2 -45.6
gs
VSWR in
ust
2SP 3SP
Frequency Characteristic (Idq=50mA)
10
9 8 7 6 5 4 3 2
Pout(W), VSWR in(-)
1 0
Pout VSW R in Ed
100 90 80 70 60 50 40 30 20 10 0
Ed(%)
450
460
470
480
490
500
510
520
f(M H z)
530
out=0.8W Con s ta n t, Vgs
fVgsIdsEdRL
(MH z ) (V) (A) (% ) (dB ) (-) (dB ) (dB )
450 2.29 0.26 45.8 4.5 3.9 -24.4 -65.0 460 1.98 0.25 48.1 5.3 3.4 -24.4 -57.1 470 1.94 0.24 49.4 6.7 2.7 -26.2 -54.2 480 1.92 0.23 50.7 8.7 2.2 -26.9 -50.9 490 1.71 0.23 52.5 10.3 1.9 -27.4 -46.4 500 1.77 0.22 53.0 10.1 1.9 -28.4 -45.7 510 1.81 0.22 54.3 7.8 2.4 -28.4 -44.8 520 1.92 0.21 56.3 5.5 3.3 -28.9 -44.3 530 2.43 0.21 54.6 3.2 5.5 -31.7 -46.7
ustment, Vds=7.2V, Pin=30m
VSWR in
2SP 3SP
Frequency Characteristic (Pout=0.8W )
10
VSWR in(-)
9 8 7 6 5 4 3 2 1 0
VSWR in Ed
100 90 80 70 60 50 40 30 20 10 0
Ed(%)
450
460
470
480
490
500
510
520
f(M H z)
530
Application Note for Silicon RF Power Semiconductors
2/5
RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz
)
p
d
)
2
2
7
2
2
7
0
0
8
0
0
8
4
5
9
9
9
9
2
8
8
0
4
7
7
3
90.2
9
2
7
90.2
9
3
2
2
5
7
0
0
8
8
6
6
0
6
0
0
9
3
0
8
5
6
0
0
2
2
4
0
2
2
7
9
0
6
0
4
0
8
81.2
8
3
0
4
4
5
6
0
91.5
9
7
2
)
p
d
)
9
9
8
8
8
8
5
6
6
9
7
7
0
6
5
5
5
4
2
60.2
6
2
3
50.2
5
3
7
7
7
5
5
6
6
6
0
70.5
7
9
8
0
0
7
7
5
0
6
8
8
4
8
0
8
8
8
6
7
0
0
5
5
9
2
0
0
0
6
5
5
3
3
0
8
91.5
9
4
6
0
5
9
0
2
2
6
8
nPin
RD01MUS2 Single-Stage amplifier Pout vs. Pin characteristics
f=450MH z, Vds=7.2V, Idq=50mA(Vgs Adjust
- AN-UHF-087-A-
PoutPi
G
Ids E
(dB m ) (m W)(dB m ) (W) (dB ) (A) (%
0.0 1.0 15.
1.0 1.3 16.
2.0 1.6 17.
3.0 2.0 18.
4.0 2.
5.0 3.
6.0 4.0 20.
7.0 5.0 21.
8.0 6.3 22.
9.0 7.9 24.
10.
11.
12.
13.
14.
15.
16.
17.
18.
10.
12.
15.
20.
25.1 29.
31.
39.
50.1 31.
63.1 31.
18.
19.
24.
26.
27.1 0.
28.
30.1 1.0 15.1 0.3
30.
0.0 15.
0.0 15.
0.1 15.
0.1 15.
0.1 14.
0.1 14.
0.1 14.
14.
14.
0.3 15.
0.3 14.
0.4 15.
15.1 0.21 33.
0.7 15.
0.8 15.
14.
1.4 14.
13.
0.0
0.0
0.0
0.0
0.0
0.1
0.11 15.
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.3
f=485MH z, Vds=7.2V, Idq=50mA(Vgs Adjust
Pout
G
Ids E
(dB m ) (m W)(dB m ) (W) (dB ) (A) (%
0.0 1.0 17.
1.0 1.3 18.
2.0 1.6 19.
3.0 2.0 20.
4.0 2.
5.0 3.
6.0 4.0 23.
7.0 5.0 24.
8.0 6.3 25.
9.0 7.9 26.
10.
11.
12.
13.
14.
15.
16.
17.
18.
10.
12.
15.
20.
25.1 31.1 1.3 17.1 0.31 58.
31.
39. 50 .1 32 .1 1.6 15 .1 0.3
63.1 32.
21.
22.
27.
28.
29.
30.
31.
31.
0.1 17.
0.1 17.
0.1 17.
0.1 17.
0.1 17.
17.
17.
0.3 17.
0.4 17.
17.
0.6 17.
0.8 17.
0.9 17.
1.1 17.
1.4 16.
15.
1.7 14.
0.0
0.0
0.0
0.1
0.11 18.
0.1
0.1
0.1
0.1
0.1
0.21 39.
0.2
0.2
0.2
0.3
0.3
0.3
6.7
8.0
9.1
10.
11.
13.
17.
20.1
23.
25.
29.
38.1
42.
47.
51.1
54.
57.
11.1
12.
14.1
16.
21.
23.
27.
31.
34.
44.
49.
54.
60.
62.
63.
64.
Pin vs. Pout, Gain & Ed(@f=450M Hz,Vdd=7.2V)
70
Pout
60
50
40
30
20
Pout (dBm), Gp (dB)
10
0
70
60
50
40
30
20
Pout (dBm), Gp (dB)
10
0
0.0 5.0 10 .0 15 .0 20.0
Gp Ed
0.0 5.0 10.0 15.0 20.0 Pin (dBm)
Pin vs. Pout, Gain & Ed(@f=485M Hz,Vdd=7.2V)
Pout Gp Ed
Pin (dBm)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
Ed (%)
Ed (%)
Application Note for Silicon RF Power Semiconductors
3/5
RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz
)
)
)
)(A)
2
2
5
8
2
9
9
9
9
9
8
2
90.2
9
9
9
8
9
8
5
5
90.8
9
2
9
8
2
2
5
9
2
8
8
8
RD01MUS2 Single-Stage amplifier Pout vs. Pin Characteristics
f=5 27 MHz , Vds =7.2 V, Idq = 50mA (Vgs Adju s t
- AN-UHF-087-A-
Gp Ids Ed
(dB
(% )
(dB m
PoutPin
(m W)(dB m)(W
0.0 1 .0 15 .4 0.0 15 .4 0.0 6 7.4
1.0 1.3 16.
0.0 15.
0.07 8.7
2.0 1.6 17.0 0.1 15.0 0.07 10.1
3.0 2.0 18.1 0.1 15.1 0.07 12.1
4.0 2.
5.0 3.
19.0 0.1 15.0 0.0
19.
0.1 14.
0.0
6.0 4.0 21.0 0.1 15.0 0.0
7.0 5.0 22.0 0.
8.0 6.3 22.
9.0 7.
24.0 0.3 15.0 0.13 27.
15.0 0.10 21.6
14.
0.11 24.4
14.0
15.
18.
10.0 10.0 25.1 0.3 15.1 0.14 31.
11.0 12.6 26.1 0.4 15.1 0.16 35.
12.0 15.
27.1 0.
15.1 0.17 40.
13.0 20.0 28.0 0.6 15.0 0.20 45.3
14.0 25.1 28.
15.0 31.6 29.6 0.
16.0 39.
30.
17.0 50.1 30.7 1.
1.0 14.
14.
14.6 0.23 54.1
13.7 0.27 60.
18.0 63.1 31.0 1.3 13.0 0.2
0.2
0.2
50.0
57.
62.
Pin vs. Pout, Gain & Ed(@ f=527MHz,Vdd=7.2V)
70
Pout
60 50 40 30 20
Pout (dBm), Gp (dB)
10
0
0.0 5.0 10.0 15.0 20.0
Gp Ed
Pin (dBm)
70 60 50 40 30 20 10 0
Ed (%)
Application Note for Silicon RF Power Semiconductors
4/5
RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz
r
.
.
.
.
.
.
.
.
.
.
.
.
.
RD01MUS2 Single-Stage amplifier Equivalent Circuit (@f=450-527MHz)
Vds
C11
C10
Vgs
W
17mm
17mm
W
C12 C13
C14
- AN-UHF-087-A-
R1
C2
25mm
RF-in
C1
C3
Note:Board material= glass-Epoxy Substrate Micro strip line width= 1.3m m/50OHM ,er=4.8 ,t=0.8mm W:Line width=1 .0mm
Parts Numbe
C1 C2 C3 C4 C5 C6 C7 C8
C9 C10 C11 C12 C13 C14
R1
R2
L1
L2
1.5mm
1mm
L1
Capacity
1000pF
2pF
15pF
0.022uF 15pF
5pF 5pF 4pF
180pF
1000pF
0.022uF
1000pF
0.022uF 22uF
4.7K OHM CR1/10-472JB 68 OHM
10.8nH
Enameled wire 4 Turns,
D:0.43mm, 1.66mm(outside
diameter)
24.4nH
Enameled wire 5 Turns,
D:0.43mm, 1.37mm(outside
diameter)
2.5mmR25mm
C4
L2
C5
9.5mm
0.5mm
C5
type name
GRM1882C1H102JA01
GRM1882C1H2R0CZ01
GRM1882C1H150JA01 GRM188B11H223KA01
GRM1882C1H150JA01 GRM1882C1H5R0CZ01 GRM1882C1H5R0CZ01 GRM1882C1H4R0CZ01
GRM1882C1H181JA01
GRM1882C1H102JA01
GRM188B11H223KA01
GRM1882C1H102JA01
GRM188B11H223KA01
A0603
CR1/10-680JB
4804A
4005A
C6 C8
15mm
urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd urata Manufacturing Co., Ltd
NICHICON CORPORAT ION
Hokuriku Electric Industry Co.,Ltd. Hokuriku Electric Industry Co.,Ltd.
Yoneda Processing Place Co.,Ltd.
Yoneda Processing Place Co.,Ltd.
7.5mm
C7
corporation
5.5mm RF-out
C9
GND
RF IN
Vgs
Vds
GND
RF OUT
Application Note for Silicon RF Power Semiconductors
5/5
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