MITSUBISHI AN-UHF-087-A User Manual
APPLICATION NOTE
SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz
SUMMARY:
This application note shows the RF Wide band characteristics data
(Pout vs. Frequency characteristics, Pout vs. Pin characteristics) at 450-527 MHz Band.
- Sample history :
RD01MUS2: Lot number “571”
Silicon RF Power Semiconductors
Document NO. AN-UHF-087-A
Date : 9
Rev. Date :22
Prepared : H.Sakairi
S.Kametani
Confirmed :T.Okawa
(Taking charge of Silicon RF by
th
Oct. 2007
th
Jun. 2010
MIYOSHI Electronics)
- Evaluate conditions :
RD01MUS2 @f=450-527MHz : Vds=7.2V, Idq=50mA (Vgs adjust)
- Results :
Page 2 shows the typical RF characteristics (Pout vs. Frequency characteristics) data.
Page 3-4 shows the typical RF characteristics (Pout vs. Pin characteristics) data.
Page 5 shows the Equivalent Circuit.
Application Note for Silicon RF Power Semiconductors
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RD01MUS2 Single-Stage amplifier RF performance at f=450-527MHz
Pin=30mW, Vds=7.2V, Idq=50mA (V
Adj
)
P
Adj
W
RD01MUS2 Single-Stage amplifier Frequency Characteristics f=450-527MHz.
- AN-UHF-087-A-
fPoutIdsEdRL
(MH z ) (W) (A) (% ) (dB ) (-) (dB ) (dB )
450 1.00 0.30 49.2 4.8 3.7 -25.0 -61.2
460 1.29 0.33 56.9 6.0 3.0 -26.9 -57.2
470 1.30 0.32 58.7 7.8 2.4 -27.5 -54.5
480 1.36 0.32 61.6 9.5 2.0 -28.4 -48.7
490 1.39 0.32 63.3 9.7 2.0 -29.1 -45.5
500 1.27 0.30 62.3 8.0 2.3 -30.1 -45.1
510 1.23 0.29 62.6 5.8 3.1 -30.4 -43.3
520 1.10 0.26 61.5 4.2 4.2 -30.9 -42.9
530 0.81 0.22 54.8 3.1 5.6 -32.2 -45.6
gs
VSWR in
ust
2SP 3SP
Frequency Characteristic (Idq=50mA)
10
9
8
7
6
5
4
3
2
Pout(W), VSWR in(-)
1
0
Pout
VSW R in
Ed
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
450
460
470
480
490
500
510
520
f(M H z)
530
out=0.8W Con s ta n t, Vgs
fVgsIdsEdRL
(MH z ) (V) (A) (% ) (dB ) (-) (dB ) (dB )
450 2.29 0.26 45.8 4.5 3.9 -24.4 -65.0
460 1.98 0.25 48.1 5.3 3.4 -24.4 -57.1
470 1.94 0.24 49.4 6.7 2.7 -26.2 -54.2
480 1.92 0.23 50.7 8.7 2.2 -26.9 -50.9
490 1.71 0.23 52.5 10.3 1.9 -27.4 -46.4
500 1.77 0.22 53.0 10.1 1.9 -28.4 -45.7
510 1.81 0.22 54.3 7.8 2.4 -28.4 -44.8
520 1.92 0.21 56.3 5.5 3.3 -28.9 -44.3
530 2.43 0.21 54.6 3.2 5.5 -31.7 -46.7
ustment, Vds=7.2V, Pin=30m
VSWR in
2SP 3SP
Frequency Characteristic (Pout=0.8W )
10
VSWR in(-)
9
8
7
6
5
4
3
2
1
0
VSWR in
Ed
100
90
80
70
60
50
40
30
20
10
0
Ed(%)
450
460
470
480
490
500
510
520
f(M H z)
530
Application Note for Silicon RF Power Semiconductors
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