MITSUBISHI AN-UHF-078-B User Manual

APPLICATION NOTE

Silicon RF Power Semiconductors

Document NO. AN-UHF-078-B
Date : 26
Rev. date : 22

th

Sep. 2006

th

Jun. 2010
Prepared : K. Mori
Confirmed : S.Kametani
(Taking charge of Silicon RF by
MIYOSHI Electronics)

SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1

GENERAL:

RA60H4452M1 and RA60H4047M1 use MOS FET device.
MOS FET devices have lower surge endurance compared with silicon bipolar devices.
And there is a possibility of burn-out when static electricity or surge is added to
devices.
This application note shows the test results of the electro static discharge level for
RA60H4452M1 and RA60H4047M1.

1. ELECTRO STATIC DISCHARGE TEST RESULTS:

-1. Test Block Diagram;

E

C

Device

R

-2. Pinning;

1 2 3 4

5

1 RF Input (Pin)
2 Gate Voltage (V
3 Drain Voltage (V
4 RF Output (P
5 RF Ground (Flange)

out

(Block Diagram)

3

2

1

4

5

)

GG

)

DD

)

Application Note for Silicon RF Power Semiconductors

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Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1

-3. Human Model Test Results;

[Type number: RA60H4452M1 (Po>60W @440-520MHz, Vdd=12.5V)]

Test Conditions are;
C=100pF, R=1.5KΩ, 3 times discharge for one Voltage,
E=100V step increasing (Max. 6000V)

Terminal Polarity Sample

NO.

Pin to Flange +

Vgg to Flange +

Vdd to Flange +

Pout to Flange +

NOTE: Test of RA60H4047M1 that is derivative from RA60H4452M1 is omitted for

the same type under this test.

AN-UHF-078-B

Destroyed

Voltage(V)
1 1400 1 -2700
2 1400 2 -2600
3 1500
1 Over 6000 1 Over -6000
2 Over 6000 2 Over –6000
3 Over 6000
1 Over 6000 1 Over –6000
2 Over 6000 2 Over –6000
3 Over 6000
1 Over 6000 1 Over –6000
2 Over 6000 2 Over –6000
3 Over 6000

Polarity Sample

NO.

-

3 -2600

-

3 Over –6000

-

3 Over –6000

-

3 Over –6000

Destroyed
Voltage(V)

Application Note for Silicon RF Power Semiconductors

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