Microsemi Corporation DMA44, DMA24, DMA12 Datasheet

8700 E. Thomas Road
Scottsdale, AZ 85252
[phone]

IGBTVS

TM

AC LINE

TRANSIENT

VOLTAGE

Features

Protects From Load Switching In AC Applications

•

For 120Vac, 240Vac and 440Vac Circuits

•

Fits Terminal Spacing on Most IGBTs

•

Fast Clamping – Subnanosecond

•

These devices will protect your IGBT in applications where it is
used in overload protection or switching ac loads. Transient
voltages produced when switching occurs in the positive one-half
of the cycle are clamped below the destruct level of the IGBT.
Unique low inductance shunt path virtually eliminates L(di/dt)
effects. Available as screened device for high reliability
applications. Includes burn-in and environmental tests.

Maximum Ratings @ 25°C

60kw peak pulse power dissipation for 120V @ 1.2/50µs

•

120kw peak pulse power dissipation for 240V @ 1.2/50µs

•

240kw peak pulse power dissipation for 440V @ 1.2/50µs

•

Operating and storage -55°C to +150°C

•

Shunt path inductance < 20nH

•

Duty cycle – .01% max.

•

Electrical Characteristics @ 25°C

AC rms REVERSE BREAKDOWN MAXIMUM MAXIMUM MAXIMUM

MICROSEMI

PART NO.

DMA12 120 175 200 / 225 5 280 200
DMA24 240 350 400 / 450 5 560 200
DMA44 440 640 735 / 900 5 1120 200

Notes:

1.Will withstand high-line conditions of 15% above nominal
voltage.

2.Test current @ 10 mA.

3.Pulse waveform – 1.2 / 50 µs.

OPERATING STAND-OFF VOLTAGE REVERSE CLAMPING PEAK PULSE

VOLTAGE NOTE 1 MIN / MAX LEAKAGE VOLTAGE CURRENT

NOMINAL (V

Vac Vdc V µA V A

WM

)(VBR) NOTE 2 (ID)(V

C

)(IPP) NOTE 3

SUPPRESSOR

(FOR IGBT PROTECTION)

MSC

IGBT

1.00

2.54

+

Hole to
fit 8mm
dia. stud

0.5

1.25


Dimensions: inches/centimeters

d – Terminals accommodate
23 -28 mm spacing

CASE: Molded plastic, meets UL 94V-O

POLARITY: Cathode marked with +

INDUCTANCE: Less than 20 nH

TERMINALS: Corrosion resistant with hole spacings

to accommodate most high power IGBTs

0.5

1.25


d

.375
.952



2.00

5.08

n Santa Ana: [phone] n Scottscale: [phone] n Colorado: [phone] n Watertown: [phone] n Chatsworth: [phone]
n Sertech Labs: [phone] n Ireland: (353) 65-40044 n Bombay: (91) 22-832-002 n Hong Kong: (852) 2692-1202

Data Sheet MSC0294A 6/3/97

Application Notes for IGBTVS

TM

Microsemi’s IGBTVSTMprotector is intended for transients produced during load switching with a duty cycle not
to exceed .01%. For protecting against transients produced when IGBTs are applied as ac power switches and
over current protectors. Stored energy in the line and load produces damaging transient voltages during power
down or fault interrupt. Microsemi’s IGBTVSTMtransient suppressor protects from nanosecond rise transients
with surge currents to 200A, 1.5/50µs. Typical application on a 3 B power line is illustrated below.

1. CONCEPT

TVS

ac POWER FROM

SERVICE ENTRY

IGBT

LINE R & L

TO

LOAD

2. DETAILS OF SINGLE PHASE PROTECTION

TM

AC

LINE

IN

IGBTVS

IGBT

GATE DRIVE

3. COMPOSITE 3 PHASE PROTECTION

Each control module contains IGBTs,
gate drive and two
illustrated by #2 above

B1

LINE R & L

IGBT

IGBTVS

CONTROL
MODULE

LINE R & L

TM

as

LOAD

B2AC IN

B3

LINE R & L

LOAD

LINE R & L