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PHASE CONTROL SCR
Bulletin I2164 rev. A 10/04
SAFEIR Series
70TPS..
Description/ Features
The 70TPS... SAFEIR series of silicon controlled
rectifiers are specifically designed for high and
medium power switching and phase control applications.
Typical applications are in input rectification (soft
start) or AC-Switches or high current crow-bar as
well as others phase-control circuits.
These products are designed to be used with
International Rectifier input diodes, switches and
output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
Characteristics 70TPS.. Units
V
I
TSM
V
Package Outline
< 1.4V @ 100A
T
= 1400A
= 1200, 1600V
RRM
I
Sinusoidal 70 A
T(AV)
waveform
I
(*) 75 A
RMS
V
RRM
I
TSM
V
T
dv/dt 500 V/µs
di/dt 150 A/µs
T
J
(*) Lead current limitation
Range
V
/
DRM
@ 100 A, TJ = 25°C 1.4 V
1200, 1600 V
1400 A
- 40 to 125 °C
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Super-247
1
70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Voltage Ratings
V
/ V
Part Number
RRM
peak and off-state voltage peak reverse voltage 125°C
, max. repetitive V
DRM
VVmA
70TPS12 1200 1300 15
70TPS16 1600 1700
Absolute Maximum Ratings
Parameters 70TPS.. Units Conditions
I
Max. Average On-state Current 70 A @ TC = 82° C, 180° conduction half sine wave
T(AV)
I
Max. Continuous RMS 75 Lead current limitation
T(RMS)
On-state Current As AC switch
I
Max. Peak One Cycle Non-Repetitive 1200 A 10ms Sine pulse, rated V
TSM
Surge Current 1400 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I2t for Fusing 7200 A2s 10ms Sine pulse, rated V
10200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for Fusing 102000 A2√s t = 0.1 to 10ms, no voltage reapplied
V
Low Level Value of Threshold 0.916 V TJ = 125°C
T(TO)
1
Voltage
V
High Level Value of Threshold 1.21
T(TO)
2
Voltage
r
Low Level Value of On-state 4.138 mΩ
t1
Slope Resistance
r
High Level Value of On-state 3.43
t2
Slope Resistance
V
Max. Peak On-state Voltage 1.4 V @ 100A, TJ = 25°C
TM
di/dt Max. Rate of Rise of Turned-on Current 15 0 A/µs TJ = 25°C
I
Max. Holding Current 20 0 mA TJ = 25°C
H
I
Max. Latching Current 400
L
I
/ Max. Reverse and Direct 1.0 mA TJ = 25°C
RRM
I
Leakage Current 15 TJ = 125°C
DRM
dv/dt Max. Rate of Rise 500 V/µs TJ = 125°C
, maximum non repetitive I
RSM
applied Initial
RRM
applied
RRM
VR = rated V
RRM
/ V
DRM
RRM
/ I
DRM
2
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70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Triggering
Parameters 70TPS.. Units Conditions
PGMMax. peak Gate Power 10 W t = 30µs
P
Max. average Gate Power 2.5
G(AV)
IGMMax. peak Gate Current 2.5 A
- VGMMax. peak negative Gate Voltage 10 V
VGTMax. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V
to trigger 1.5 TJ = 25°C resistive load
1.1 TJ = 125°C
IGTMax. required DC Gate Current 270 mA TJ = - 40°C
to trigger 100 TJ = 25°C
80 TJ = 125°C
VGDMax. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, V
IGDMax. DC Gate Current not to trigger 6 mA
Thermal-Mechanical Specifications
= rated value
DRM
Parameters 70TPS.. Units Conditions
TJMax. Junction Temperature Range - 40 to 125 °C
T
Max. Storage Temperature Range - 40 to 150
stg
R
Max. Thermal Resistance Junction 0.27 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 40
thJA
to Ambient
R
Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased
thCS
to Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12 (10) (lbf-in)
Case Style Super-247
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Device Units
180o120
Sine half wave conduction Rect. wave conduction
o
90
o
60
o
70TPS 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 °C/W
when devices operate at different conduction angles than DC)
thJC
30
o
180o120
o
90
o
60
o
30
o
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3
70TPS.. SAFEIR Series
0
Bulletin I2164 Rev. A 10/04
130
120
110
100
90
70TPS.. Series
RthJC (DC) = 0.27 ˚C/W
30˚
60˚
90˚
Conduction Angle
120˚
180˚
80
70
Maximum Allowable Case temperature (°C)
0 1020304050607080
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
140
180˚
120˚
120
90˚
60˚
100
30˚
80
RMS Limit
60
40
20
Conduction Angle
70TPS.. Series
Tj = 125˚C
0
0 10203040506070
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
130
120
70TPS.. Series
RthJC (DC) = 0.27 ˚C/W
DC
110
Conduction Period
100
180˚
90
80
30˚
60˚
70
60
Maximum Allowable Case temperature (°C)
0 102030405060708090
Average On-state Current (A)
90˚
120˚
150
180˚
120˚
120
90˚
60˚
90
30˚
RMS Limit
DC
60
30
Conduction Period
70TPS.. Series
0
0 1530456075
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Tj = 125˚C
1300
At Any Rated Load Condition And With
1200
1100
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
70TPS.. Series
500
Peak Half Sine Wave On-state Current (A)
11010
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
4
1500
Maximum Non Repetitive Surge Current
1400
1300
1200
1100
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
Rated Vrrm Reapplied
1000
900
800
700
70TPS.. Series
600
500
Peak Half Sine Wave On-state Current (A)
0.01 0.1 1
Pulse Train Duration (s)
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1000
70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
100
Tj = 125˚C
10
Tj = 25˚C
Instantaneous On-state Current (A)
1
0.511.522.533.5
70TPS.. Series
Instantaneous On-state Voltage (A)
Fig. 7 - On-state Voltage Drop Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
1
Instantaneous Gate Voltage (V)
VGD
IGD
0.1
(a)
(b)
TJ = -40 ˚C
TJ = 25 ˚C
TJ = 125 ˚C
70TPS.. Series
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(4)
(3)
(2) (1)
Frequency Limited by PG(AV)
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)
Fig. 8 - GateCharacteristics
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1
(°C/W)
thJC
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.17
D = 0.08
Single Pulse
70TPS.. Series
0.01
Transient Thermal Impedance Z
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
Characteristics
thJC
5
70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Outline Table
16.10 [.632]
2X
15.10 [.595]
12
3
0.25 [.010] B A
2X R
20.80 [.818]
19.80 [.780]
C
14.80 [.582]
13.80 [.544]
5.45 [.215]
NOTE:parts are designed for clip mounting to heatsinks; mounting requirements and methods are
discussed in AN-997
Ordering Information Table
5.50 [.216]
A
4.25 [.167]
3.85 [.152]
3X
4.50 [.178]
1.30 [.051]
3X
1.10 [.044]
NOTES:
1. DIMENSIONING AN D TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
4. OUTLINE CONF ORMS TO JEDEC OUTLINE TO-274AA
Dimensions in millimeters and inches
0.13 [.005]
2.15 [.084]
1.45 [.058]
4
B
2.35 [.092]
1.65 [.065]
16.10 [.633]
15.50 [.611]
Ø 1.60 [.063]
MAX.
SECTION E-E
0.25 [.010] B A
13.90 [.547]
13.30 [.524]
4
EE
LEAD ASSIGNMENTS
MOSFET
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
1.30 [.051]
0.70 [.028]
IGBT
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
Device Code
70 T P S 16
1
3
524
2
(A)
1 - Current Rating
2 - Circuit Configuration:
1 (K)
(G) 3
T = Thyristor
3 - Package:
P = Super-247
4 - Type of Silicon:
S = Standard Recovery Rectifier
5 - Voltage code: Code x 100 = V
RRM
6
12 = 1200V
16 = 1600V
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70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/04
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