International Rrectifier SAFEIR User Manual
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PHASE CONTROL SCR
Bulletin I2164 rev. A 10/04
SAFEIR Series
70TPS..
Description/ Features
The 70TPS... SAFEIR series of silicon controlled
rectifiers are specifically designed for high and
medium power switching and phase control applications.
Typical applications are in input rectification (soft
start) or AC-Switches or high current crow-bar as
well as others phase-control circuits.
These products are designed to be used with
International Rectifier input diodes, switches and
output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
Characteristics 70TPS.. Units
V
I
TSM
V
Package Outline
< 1.4V @ 100A
T
= 1400A
= 1200, 1600V
RRM
I
Sinusoidal 70 A
T(AV)
waveform
I
(*) 75 A
RMS
V
RRM
I
TSM
V
T
dv/dt 500 V/µs
di/dt 150 A/µs
T
J
(*) Lead current limitation
Range
V
/
DRM
@ 100 A, TJ = 25°C 1.4 V
1200, 1600 V
1400 A
- 40 to 125 °C
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Super-247
1
70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Voltage Ratings
V
/ V
Part Number
RRM
peak and off-state voltage peak reverse voltage 125°C
, max. repetitive V
DRM
VVmA
70TPS12 1200 1300 15
70TPS16 1600 1700
Absolute Maximum Ratings
Parameters 70TPS.. Units Conditions
I
Max. Average On-state Current 70 A @ TC = 82° C, 180° conduction half sine wave
T(AV)
I
Max. Continuous RMS 75 Lead current limitation
T(RMS)
On-state Current As AC switch
I
Max. Peak One Cycle Non-Repetitive 1200 A 10ms Sine pulse, rated V
TSM
Surge Current 1400 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I2t for Fusing 7200 A2s 10ms Sine pulse, rated V
10200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for Fusing 102000 A2√s t = 0.1 to 10ms, no voltage reapplied
V
Low Level Value of Threshold 0.916 V TJ = 125°C
T(TO)
1
Voltage
V
High Level Value of Threshold 1.21
T(TO)
2
Voltage
r
Low Level Value of On-state 4.138 mΩ
t1
Slope Resistance
r
High Level Value of On-state 3.43
t2
Slope Resistance
V
Max. Peak On-state Voltage 1.4 V @ 100A, TJ = 25°C
TM
di/dt Max. Rate of Rise of Turned-on Current 15 0 A/µs TJ = 25°C
I
Max. Holding Current 20 0 mA TJ = 25°C
H
I
Max. Latching Current 400
L
I
/ Max. Reverse and Direct 1.0 mA TJ = 25°C
RRM
I
Leakage Current 15 TJ = 125°C
DRM
dv/dt Max. Rate of Rise 500 V/µs TJ = 125°C
, maximum non repetitive I
RSM
applied Initial
RRM
applied
RRM
VR = rated V
RRM
/ V
DRM
RRM
/ I
DRM
2
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70TPS.. SAFEIR Series
Bulletin I2164 Rev. A 10/04
Triggering
Parameters 70TPS.. Units Conditions
PGMMax. peak Gate Power 10 W t = 30µs
P
Max. average Gate Power 2.5
G(AV)
IGMMax. peak Gate Current 2.5 A
- VGMMax. peak negative Gate Voltage 10 V
VGTMax. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V
to trigger 1.5 TJ = 25°C resistive load
1.1 TJ = 125°C
IGTMax. required DC Gate Current 270 mA TJ = - 40°C
to trigger 100 TJ = 25°C
80 TJ = 125°C
VGDMax. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, V
IGDMax. DC Gate Current not to trigger 6 mA
Thermal-Mechanical Specifications
= rated value
DRM
Parameters 70TPS.. Units Conditions
TJMax. Junction Temperature Range - 40 to 125 °C
T
Max. Storage Temperature Range - 40 to 150
stg
R
Max. Thermal Resistance Junction 0.27 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 40
thJA
to Ambient
R
Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased
thCS
to Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12 (10) (lbf-in)
Case Style Super-247
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Device Units
180o120
Sine half wave conduction Rect. wave conduction
o
90
o
60
o
70TPS 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 °C/W
when devices operate at different conduction angles than DC)
thJC
30
o
180o120
o
90
o
60
o
30
o
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