INFINEON IPB08CN10N G, IPI08CN10N G, IPP08CN10N G User Manual
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IPB08CN10N G
IPI08CN10N G IPP08CN10N G
OptiMOS®2 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
product (FOM)
DS(on)
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB08CN10N G IPI08CN10N G IPP08CN10N G
V
R
I
DS
DS(on),max (TO263)
D
100 V
8.2
95 A
mΩ
Package
Marking
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
PG-TO263-3 PG-TO262-3 PG-TO220-3
08CN10N 08CN10N 08CN10N
=25 °C, unless otherwise specified
j
I
D
2)
I
D,pulse
E
AS
TC=25 °C
T
=100 °C
C
TC=25 °C
ID=95 A, R
=95 A, VDS=80 V,
I
D
=25 Ω
GS
di /dt =100 A/µs,
T
=175 °C
j,max
3)
V
GS
P
tot
T
, T
j
TC=25 °C
stg
Value
95 A
68
380
262 mJ
6 kV/µs
±20 V
167 W
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.02 page 1 2006-06-02
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction 4) ambient (TO220, TO262, TO263)
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm2 cooling area
5)
- - 0.9 K/W
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=130 µA
VDS=100 V, VGS=0 V,
T
=25 °C
j
100 - - V
234
- 0.1 1 µA
V
=100 V, VGS=0 V,
DS
T
=125 °C
j
Gate-source leakage current
Drain-source on-state resistance
I
R
GSS
DS(on)
VGS=20 V, VDS=0 V
VGS=10 V, ID=95 A,
(TO263)
V
=10 V, ID=95 A,
GS
(TO220, TO262)
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
See figure 3
3)
T
=150 °C and duty cycle D=0.01 for Vgs<-5V
jmax
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
R
G
g
fs
|VDS|>2|ID|R
I
=95 A
D
DS(on)max
,
- 10 100
- 1 100 nA
- 6.1 8.2
- 6.4 8.5
- 1.5 -
57 113 - S
mΩ
Ω
Rev. 1.02 page 2 2006-06-02
IPB08CN10N G
y
g
IPI08CN10N G IPP08CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
C
iss
=0 V, VDS=50 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
gd
Q
sw
Q
g
GS
f =1 MHz
V
=50 V, VGS=10 V,
DD
I
=47.5 A, R
D
V
=50 V, ID=95 A,
DD
V
=0 to 10 V
GS
=1.6 Ω
G
- 5010 6660 pF
- 757 1010
-4365
-1523ns
-2436
-2639
-610
-2736nC
-1827
-3044
- 75 100
Gate plateau voltage
Output charge
V
Q
plateau
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
t
rr
Q
rr
VDD=50 V, VGS=0 V
=25 °C
T
C
VGS=0 V, IF=95 A,
T
=25 °C
j
VR=50 V, IF=IS,
di
/dt =100 A/µs
F
- 5.5 - V
- 80 106 nC
- - 95 A
- - 380
- 1 1.2 V
- 105 ns
- 270 - nC
Rev. 1.02 page 3 2006-06-02
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
200
160
120
[W]
tot
P
80
40
0
0 50 100 150 200
TC [°C]
100
80
60
[A]
D
I
40
20
0
0 50 100 150 200
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
10
[A]
10
D
I
10
10
p
3
1 µs
10
100 µs
10 ms
1
10 µs
1 ms
10
2
2
DC
1
0
-1
10
-1
10
0
VDS [V]
=f(tp)
thJC
parameter: D =tp/T
10
-1
[K/W]
10
thJC
Z
-2
10
10
3
0
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
10
10
-4
-5
10
-3
10
-2
10
-1
10
0
tp [s]
Rev. 1.02 page 4 2006-06-02
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