INFINEON IPP04N03L, IPB04N03L User Manual
DS
DS(on)
D
DS(on)
jmax
AR
GS
j
stg
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OptiMOS Buck converter series
Feature
• N-Channel
• Logic Level
• Excellent Gate Charge x R
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
product (FOM)
IPP04N03L
IPB04N03L
Product Summary
V
R
max. SMD version 3.9 mΩ
I
P- TO263 -3-2 P- TO220 -3-1
30 V
80 A
• Ideal for fast switching buck converter
Type Package Ordering Code
IPP04N03L P- TO220 -3-1 Q67042-S4108
IPB04N03L P- TO263 -3-2 Q67042-S4107
Marking
04N03L
04N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
1)
I
D
80
A
80
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25Ω
I
D puls
E
AS
320
60 mJ
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, T
jmax
=175°C
2)
E
dv/dt
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
tot
, T
18
6 kV/µs
±20
188 W
-55... +175
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
V
°C
2003-01-17
IPP04N03L
thJC
IPB04N03L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
thJA
- 0.51 0.8 K/W
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID = 130 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=45A
VGS=4.5V, ID=45A, SMD version
Drain-source on-state resistance
VGS=10V, ID=45A
VGS=10V, ID=45A, SMD version
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Diagrams are related to straight lead versions
4)
= 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
-
-
-
-
4.9
4.6
3.6
3.2
6.2
5.9
4.2
3.9
mΩ
Page 2
2003-01-17
IPP04N03L
iss
oss
rss
G
d(on)
r
d(off)
f
gs
gd
(plateau)
SM
SD
rr
rr
IPB04N03L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
11.5 23 - S
- 2930 3900 pF
- 1150 1520
- 270 420
- 1.9 - Ω
VDD=15V, VGS=10V,
ID=20A,
RG=2.2Ω
- 12.7 19 ns
- 20 30
- 54.2 81.3
- 18.9 28.3
VDD=15V, ID=40A - 9.9 12.4 nC
- 23 35
g
VDD=15V, ID=40A,
VGS=0 to 5V
- 41.8 52
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
S
VDS=15V, ID=40A,
VGS=0V
VDD=15V, ID=40A - 3.2 - V
TC=25°C - - 80 A
- 40.4 50 nC
- - 320
VGS=0V, IF=80A - 0.9 1.2 V
VR=-V, I
diF/dt=100A/µs
F=lS
,
- 50 62 ns
- 61 76 nC
Page 3
2003-01-17
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