Infineon BCR112, BCR112F, BCR112W Schematic [ru]
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ)
• BCR112U: Two internally isolated
transistors with good matching
in one multichip package
• BCR112U: For orientation in reel see
package information below
BCR112...
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BCR112/F
BCR112W
C
3
R
1
R
2
21
EB
EHA07184
Type Marking Pin Configuration Package
BCR112
BCR112F
BCR112W
WFs
WFs
WFs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
SOT23
TSFP-3
SOT323
1
Pb-containing package may be available upon special request
1
2007-09-17
Maximum Ratings
g
BCR112...
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Input reverse voltage V
Collector current I
Total power dissipationBCR112, T
BCR112F, T
BCR112W, T
≤102°C
S
≤128°C
S
≤124°C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
BCR112
CEO
CBO
i(fwd)
i(rev)
C
tot
50 V
50
30
10
100 mA
mW
200
250
250
j
st
150 °C
-65 ... 150
Symbol Value Unit
R
thJS
K/W
≤ 240
BCR112F
BCR112W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
≤ 90
≤ 105
-
2
2007-09-17
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
V
(BR)CEO
50 - -
BCR112...
V
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 40 V, IE = 0
CB
Emitter-base cutoff current
V
= 10 V, IC = 0
EB
DC current gain1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor R
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
1
Resistor ratio R1/R
50 - -
- - 100 nA
- - 1.61 mA
20 - - -
- - 0.3 V
0.8 - 1.5
1 - 2.5
3.2 4.7 6.2 kΩ
2
0.9 1 1.1 -
AC Characteristics
Transition frequency
I
= 10 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1
Pulse test: t < 300µs; D < 2%
f
T
C
cb
3
- 140 - MHz
- 3 - pF
2007-09-17
BCR112...
DC current gain hFE = ƒ(IC)
V
= 5 V (common emitter configuration)
CE
3
10
2
10
FE
h
1
10
-40 °C
10
-25 °C
25 °C
85 °C
125 °C
-3
10
-2
10
10
-1
0
10
-4
Collector-emitter saturation voltage
V
A
I
-1
10
C
= ƒ(IC), IC/IB = 20
CEsat
0.5
V
0.4
0.35
0.3
Vcesat
0.25
0.2
0.15
0.1
0.05
0
-3
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-2
A
I
-1
10
C
Input on Voltage Vi
V
= 0.3V (common emitter configuration)
CE
1
10
(on)
= ƒ(IC)
-40 °C
-25 °C
V
25 °C
85 °C
125 °C
i(on)
V
0
10
-1
10
10
-5
10
-4
10
-3
10
Input off voltage V
V
= 5V (common emitter configuration)
CE
1
10
i(off)
= ƒ(IC)
-40 °C
-25 °C
25 °C
V
85 °C
125 °C
i(off)
V
0
10
-1
-2
I
-1
A
10
C
10
10
-5
10
-4
10
-3
10
-2
I
-1
A
10
C
4
2007-09-17
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