Infineon BCR10PN Schematic [ru]
NPN/PNP Silicon Digital Transistor Array
g
• Switching circuit, inverter, interface circuit,
BCR10PN
driver circuit
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
• Built in bias resistor NPN and PNP
(R1=10 kΩ, R2 =10 kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Tape loading orientation
Top View
456
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
4
5
6
C1 B2 E2
6 54
R
1
TR1
R
R
2
3
2
1
R
2
TR2
1
321
C2B1E1
EHA07176
Type Marking Pin Configuration Package
BCR10PN W1s 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SOT363
Maximum Ratings for NPN and PNP Types
Parameter
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Input reverse voltage V
DC collector current I
Total power dissipation, TS = 115 °C P
Junction temperature T
Storage temperature T
Symbol Value Unit
CEO
CBO
i(fwd)
i(rev)
C
tot
j
st
50 V
50
40
10
100 mA
250 mW
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
R
thJS
≤ 140 K/W
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-09-22
Electrical Characteristics at TA=25°C, unless otherwise specified
BCR10PN
Parameter
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
= 100 µA, IB = 0
I
C
Collector-base breakdown voltage
= 10 µA, IE = 0
I
C
Collector cutoff current
= 40 V, IE = 0
V
CB
Emitter cutoff current
= 10 V, IC = 0
V
EB
DC current gain 1)
= 5 mA, VCE = 5 V
I
C
Collector-emitter saturation voltage1)
= 10 mA, IB = 0.5 mA
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - - V
50 - -
- - 100 nA
- - 0.75 mA
30 - -
-
- - 0.3 V
Input off voltage
= 100 µA, VCE = 5 V
I
C
Input on Voltage
= 2 mA, VCE = 0.3 V
I
C
Input resistor R
V
V
i(off)
i(on)
1
Resistor ratio R1/R
AC Characteristics for NPN and PNP Types
Transition frequency
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
f
C
T
cb
0.8 - 1.5
1 - 2.5
7 10 13
2
0.9 1 1.1
kΩ
-
- 130 - MHz
- 3 - pF
1) Pulse test: t < 300µs; D < 2%
2
2011-09-22
NPN Type
BCR10PN
DC Current Gain hFE = f (IC)
= 5V (common emitter configuration)
V
CE
3
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
2
10
FE
h
1
10
0
10
10
-4
10
-3
10
-2
Collector-Emitter Saturation Voltage
V
CEsat
= f (IC), hFE = 20
0.5
V
0.4
0.35
CEsat
V
0.3
0.25
0.2
0.15
0.1
0.05
0
A
I
-1
10
C
10
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-2
A
I
-1
10
C
Input on Voltage V
= 0.3V (common emitter configuration)
V
CE
i(on)
= f (IC)
2
10
V
1
i(on)
V
10
10
10
0
-1
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
-5
10
-4
10
-3
10
Input off voltage V
= 5V (common emitter configuration)
V
CE
i(off)
= f (IC)
1
10
-40 °C
-25 °C
25 °C
-1
0
10
-5
85 °C
125 °C
10
-4
10
-3
10
-2
I
-1
A
10
C
V
i(off)
V
10
-2
I
-1
A
10
C
10
3
2011-09-22
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