Infineon BC859A Schematic [ru]

PNP Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types: BC846, BC847, BC848

BC849, BC850 (NPN)

BC856...BC860

3

1

2

VPS05161

Type Marking Pin Configuration Package

BC856A

BC856B

BC857A

BC857B

BC857C

BC858A

BC858B

BC858C

BC859A

BC859B

BC859C

BC860B

BC860C

3As

3Bs

3Es

3Fs

3Gs

3Js

3Ks

3Ls

4As

4Bs

4Cs

4Fs

4Gs

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

1 Dec-11-2001

Maximum Ratings

g

A

BC856...BC860

Parameter

Symbol

BC856 BC857

BC860

Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current 200
Total power dissipation, TS = 71 °C P

Junction temperature
Storage temperature

V
V
V
V
I

C

I

CM

I

BM

I

EM

T
T

CEO

CBO

CES

EBO

tot

j

st

65 45 30 V

80 50 30

80 50 30

5 5 5

100 mA

200 mA

200

330 mW

150 °C

-65 ... 150

Thermal Resistance

Junction - soldering point

1)

R

thJS



240 K/W

BC858

BC859

Unit

Electrical Characteristics at T

= 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

BC856

BC857/860

BC858/859

BC856

BC857/860

BC858/859

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

-

-

-

-

-

V

-

-

-

-

-

-

2 Dec-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC856...BC860

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

I

= 10 µA, VCE = 5 V

C

BC856

BC857/860

BC858/859

h

-group A

FE

h

-group B

FE

h

-group C

FE

Symbol Values Unit

min. typ. max.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

80

50

30

5 - -

- - 15 nA

- - 5 µA

-

-

-

-

-

-

140

250

480

V

-

-

-

-

-

-

-

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

-group A

FE

h

-group B

FE

-group C

h

FE

h

FE

V

CEsat

V

BEsat

V

BE(ON)

125

220

420

-

-

-

-

600

-

180

290

520

75

250

700

850

650

-

250

475

800

300

650

-

-

750

820

mV

1) Pulse test: t ≤=300µs, D = 2%

3 Dec-11-2001