INFINEON BC807U User Manual
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PNP Silicon Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
BC807U
4
5
6
3
2
1
VPW09197
C1 B2 E2
6 54
TR1
TR2
321
C2B1E1
EHA07175
Type Marking Pin Configuration Package
BC807U 5Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage
DC collector current
Peak collector current A1
Peak base current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CEO
CBO
EBO
tot
j
st
ValueSymbol Unit
45
50
5Emitter-base voltage
500 mA
100Base current mA
200
330 mW
°C150
-65 ... 150
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
105 K/W
Nov-29-20011
BC807U
A
Electrical Characteristics at T
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 25 V, IE = 0
CB
Collector cutoff current
V
= 25 V, IE = 0 , TA = 150 °C
CB
Emitter cutoff current
V
= 4 V, IC = 0
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
EBO
45 - - V
50 - -
5 - -
- - 100 nA
- - 50 µA
- - 100 nA
DC current gain 1)
I
= 100 mA, VCE = 1 V
C
I
= 500 mA, VCE = 1 V
C
Collector-emitter saturation voltage1)
I
= 500 mA, IB = 50 mA
C
Base-emitter saturation voltage 1)
I
= 500 mA, IB = 50 mA
C
AC Characteristics
Transition frequency
I
= 50 mA, VCE = 5 V, f = 20 MHz
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
h
FE
V
CEsat
V
BEsat
f
T
C
cb
C
eb
160
40
250
-
400
-
-
- - 0.7 V
- - 1.2
- 200 - MHz
- 10 - pF
- 60 -
1) Pulse test: t < 300s; D < 2%
Nov-29-20012
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