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Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band
77MHz to 108MHz
Designed for application requiring back-to-back
diode configuration for optimum signal distortion
and detuning
High tuning ratio at low supply voltage (car radio)
Monolitic chip (common cathode) for perfect
dual diode tracking
Good C- V linearity
High figure of merit
BB844
BB844
3
D2
D1
1
2
Type Package Configuration L
(nH) Marking
S
BB844 SOT23 common cathode 1.8 SNs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
R
RM
F
op
st
18 V
20
50 mA
-55 ... 150
-55 ... 150
°C
1
Nov-07-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB844
Parameter
DC Characteristics
Reverse current
V
= 16 V
R
= 16 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 2 V, f = 1 MHz
R
V
= 4 V, f = 1 MHz
R
V
= 8 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V, VR = 8 V, f = 1 MHz
R
Capacitance matching1)
V
= 2V to 8V , f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
R
-
-
-
-
20
nA
200
C
T
C
T2/CT8
C
T/CT
42.5
25
10
43.75
27
11.5
45
29
13
3.2 3.8 -
- - 1.5 %
pF
Series resistance
V
= 2 V, f = 100 MHz
R
1
For details please refer to Application Note 047.
r
S
- 0.28 -
2
Nov-07-2002