INFINEON BB837, BB857 User Manual
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Silicon Tuning Diode
For SAT -indoor-units
High capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB837
BB857
BB837 /BB857...
1 2
Type Package Configuration L
BB837
BB857
SOD323
SCD80
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage
R
5k
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
30 V
35
20 mA
-55 ... 150
-55 ... 150
V
R
RM
F
op
stg
(nH) Marking
S
1.8
0.6
M
OO
°C
1
Nov-07-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB837 /BB857...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 25 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance matching1)
V
= 1V ... 28V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
R
C
T
C
T1/CT25
C
T1/CT28
C
T/CT
-
-
6
0.5
0.45
-
-
6.6
0.55
0.52
10
200
7.2
0.65
-
10.2 12 -
9.7 12.7 -
- - 5 %
nA
pF
-
Series resistance
V
= 5 V, f = 470 MHz
R
1
For details please refer to Application Note 047
r
S
- 1.5 -
2
Nov-07-2002
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