INFINEON BB639, BB659 User Manual
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Silicon Variable Capacitance Diodes
For tuning of extended frequency band
in VHF TV / VTR tuners
High capactance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639
BB659
BB639/BB659...
1 2
Type Package Configuration L
BB639
BB659
Maximum Ratings at T
SOD323
SCD80
= 25°C, unless otherwise specified
A
single
single
(nH) Marking
S
1.8
0.6
yellow S
DE
Parameter Symbol Value Unit
Diode reverse voltage V
Peak reverse voltage
( R
5k )
V
Forward current I
Operating temperature range T
Storage temperature T
R
RM
F
op
stg
30 V
35
20 mA
-55 ... 150
-55 ... 150
°C
1
Nov-07-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
e
e
e
BB639/BB659...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V, VR = 25 V, f = 1 MHz
R
Capacitance matching1)
V
= 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc
R
BB639
Symbol Values Unit
min. typ. max.
I
R
C
T
C
T1/CT28
C
T2/CT25
C
T/CT
-
-
36
27.7
2.5
2.4
-
-
38.3
29.75
2.85
2.6
10
200
40
31.8
3.2
2.9
13.5 14.7 -
9.8 10.4 -
-
-
2.5
nA
pF
%
V
= 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc
R
BB659
V
= 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc
R
BB659
Series resistance
V
= 5 V, f = 470 MHz
R
1
For details please refer to Application Note 047.
-
-
r
S
- 0.65 0.7
0.3
0.4
1
2
2
Nov-07-2002
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