Infineon BAV99, BAV99S, BAV99U, BAV99W Schematic [ru]

Silicon Switching Diode

• For high-speed switching applications

• Series pair configuration

• BAV99S / U: For orientation in reel see

package information below

BAV99...

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

BAV99
BAV99W

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BAV99S
BAV99U

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Type Package Configuration Marking

BAV99
BAV99S
BAV99U
BAV99W

SOT23
SOT363
SC74
SOT323

series
dual series
dual series
series

A7s
A7s
A7s
A7s

1

Pb-containing package may be available upon special request

1

2007-09-19

BAV99...

j

g

Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit

Diode reverse voltage V
Peak reverse voltage V
Forward current I
Non-repetitive peak surge forward current

I
t = 1 µs
t = 1 ms
t = 1 s, single
t = 1 s, double

Total power dissipation

P

BAV99, TS ≤ 28°C
BAV99S, TS ≤ 85°C
BAV99U, TS ≤ 113°C
BAV99W, TS ≤ 110°C

Junction temperature T
Storage temperature T

R

RM
F
FSM

tot

st

80 V
85

200 mA

4.5
1

0.5

0.75

330
250
250
250

150 °C

-65 ... 150

A

mW

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point1)
BAV99
BAV99S
BAV99U
BAV99W

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

R

thJS

≤ 360
≤ 260
≤ 150
≤ 160

K/W

2

2007-09-19

Electrical Characteristics at TA = 25°C, unless otherwise specified

BAV99...

Parameter

DC Characteristics

Breakdown voltage

= 100 µA

I

(BR)

Reverse current

= 70 V

V

R

= 25 V, TA = 150 °C

V

R

= 70 V, TA = 150 °C

V

R

Forward voltage

= 1 mA

I

F

= 10 mA

I

F

= 50 mA

I

F

= 100 mA

I

F

= 150 mA

I

F

Symbol Values Unit

min. typ. max.

V

I

V

R

(BR)

F

85 - - V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0.15
30
50

715

855
1000
1200
1250

µA

mV

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics

Diode capacitance

V

= 0 V, f = 1 MHz

R

Reverse recovery time

I

= 10 mA, IR = 10 mA, measured at IR = 1mA,

F

R

= 100 Ω

L

C

t

T

rr

- - 1.5 pF

- - 4 ns

Test circuit for reverse recovery time

D.U.T.

Ι

F

Oscillograph

EHN00019

Pulse generator: tp = 100ns, D = 0.05,
t

Oscillograph: R = 50, t

= 0.6ns, Ri = 50Ω

r

= 0.35ns

r

C ≤ 1pF

3

2007-09-19

BAV99...

Reverse current IR = ƒ (TA)

V

= Parameter

R

5

10

nA

4

10

R

I

3

10

2

10

1

10

0 25 50 75 100

70 V
25 V

°C

Forward Voltage VF = ƒ (TA)
I

= Parameter

F

BAV 99 EHB00078

1.0
V

V

F

0.5

150

T

A

Ι

= 100 mA

F

10 mA

1 mA

0.1 mA

0

0 50 100 150

C

T

A

Forward current IF = ƒ (VF)
T

= 25°C

A

150

Ι

mA

F

100

typ max

50

0

EHB00076BAV 99

1.5V1.00.50

V

F

Forward current IF = ƒ (TS)
BAV99

250

mA

200

175

F

I

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

°C

150

T

S

4

2007-09-19

BAV99...

Forward current IF = ƒ (TS)

BAV99S

250

mA

200

175

F

I

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

Forward current IF = ƒ (TS)
BAV99U

250

mA

200

175

F

I

150

125

100

75

50

25

°C

150

T

S

0

0 15 30 45 60 75 90 105 120

T

°C

150

S

Forward current IF = ƒ (TS)
BAV99W

250

mA

200

175

F

I

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

Permissible Puls Load R

thJS

= ƒ (tp)

BAV99

3

10

2

10

thJS

R

1

10

0

10

-1

10

-7

-6

°C

150

T

S

10

10

10

-5

10

-4

D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0

-3

10

10

-2

s

T

0

10

P

5

2007-09-19