INFINEON BAT64, BAT64-02V, BAT64-02W, BAT64-04, BAT64-04T User Manual
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Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAT64...
BAT64 BAT64-06
BAT64-02V
BAT64-02W
BAT64-04
BAT64-04T
BAT64-05
BAT64-05W
BAT64-06W
BAT64-04W
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ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration L
BAT64
BAT64-02V*
BAT64-02W
BAT64-04
BAT64-04T*
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
SOT23
SC79
SCD80
SOT23
SC75
SOT323
SOT23
SOT323
SOT23
single
single
single
series
series
series
common cathode
common cathode
common anode
(nH) Marking
S
1.8
0.6
0.6
1.8
1.6
1.4
1.8
1.4
1.8
63s
t
64
64s
S1
64s
65s
65s
66s
BAT64-06W
* Preliminary data
SOT323
common anode
1
1.4
66s
2005-10-18
Maximum Ratings at TA = 25°C, unless otherwise specified
BAT64...
Parameter
Diode reverse voltage V
Forward current I
Non-repetitive peak surge forward current
(t ≤ 10ms)
Average forward current (50/60Hz, sinus) I
Total power dissipation
BAT64, T
BAT64-02V, BAT64-02W, T
BAT64-04, BAT64-06, T
BAT64-04W, BAT64-06W, T
BAT64-05, T
BAT64-05W, T
BAT64-04T, T
≤ 86°C
S
≤ 36°C
S
S
≤ 104°C
S
≤ tbd
≤ 121°C
S
≤ 61°C
S
≤ 111°C
S
Junction temperature T
Storage temperature T
Symbol Value Unit
R
F
I
FSM
FAV
P
tot
40 V
250 mA
800
120
mW
250
250
250
250
250
250
250
j
stg
150 °C
-55 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
BAT64
BAT64-02V, BAT64-02W
BAT64-04, BAT64-06,
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
BAT64-04T
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Symbol Value Unit
R
thJS
K/W
≤ 255
≤ 115
≤ 355
≤ 155
≤ 455
≤ 185
tbd
2
2005-10-18
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAT64...
Parameter
DC Characteristics
Breakdown voltage
= 10 µA
I
(BR)
Reverse current
= 30 V
V
R
= 30 V, TA = 85 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
F
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
I
V
C
(BR)
R
F
T
40 - - V
-
-
270
310
370
500
-
-
320
385
440
570
2
200
350
430
520
750
- 4 6 pF
µA
mV
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured IR = 1 mA ,
F
R
= 100 Ω
L
t
rr
- - 5 ns
3
2005-10-18
BAT64...
Diode capacitance CT = ƒ (VR)
f = 1MHz
10
pF
C
T
8
7
6
5
4
3
2
1
0
0
10 20 V 30
Reverse current IR = ƒ(VR)
= Parameter
T
A
EHB00059BAT 64...
Ι
R
V
R
BAT 64... EHB00058
2
10
A
µ
T
A
1
10
0
10
-1
10
-2
10
-3
10
0102030
= 125
25
V
R
85
V
C
C
C
Forward current IF = ƒ (VF)
= Parameter
T
A
BAT 64... EHB00057
2
10
mA
Ι
F
1
10
T
0
10
-1
10
-2
10
0 0.5
A
= -40
25
85
125
Forward current IF = ƒ (TS)
BAT64W
300
mA
C
C
C
C
1
V
V
F
200
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
°C
T
150
S
4
2005-10-18
BAT64...
Forward current IF = ƒ (TS)
BAT64-02V, BAT64-02W
300
mA
200
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
Forward current IF = ƒ (TS)
BAT64-04, BAT64-06
300
mA
200
F
I
150
100
50
°C
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
T
150
S
Forward current IF = ƒ (TS)
BAT64-04W, BAT64-06W
300
mA
200
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
Forward current IF = ƒ (TS)
BAT64-05
300
mA
200
F
I
150
100
50
°C
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
T
150
S
5
2005-10-18
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