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查询BAT 64供应商
Silicon Schottky Diodes
BAT 64
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
1
3
BAT 64-05BAT 64
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 64
BAT 64-04
63s
64s
1 = A
1 = A1
2 n.c.
2 = C2
BAT 64-06BAT 64-04
1
3 = C
3 = C1/A2
3
2
EHA07006
SOT-23
SOT-23
2
VPS05161
BAT 64-05
BAT 64-06
65s
66s
1 = A1
1 = C1
2 = A2
2 = C2
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Symbol Value Unit
V
I
I
Surge forward current (t ≤ 10ms) I
Total power dissipation, TS = 61 °C P
Junction temperature
Storage temperature
T
T
Maximum Ratings
Junction - ambient
Junction - soldering point
1)
R
R
R
F
FAV
FSM
tot
j
st
thJA
thJS
3 = C1/2
3 = A1/2
-55 ... 150
≤ 495
≤ 355
SOT-23
SOT-23
40 V
250 mA
120
800
250 mW
150 °C
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAT 64
Parameter
DC characteristics
Reverse current
V
= 25 V
R
Reverse current
V
= 25 V, TA = 150 °C
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 30 mA
F
I
= 100 mA
F
AC characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
Symbol Values Unit
min. typ. max.
I
I
V
C
R
R
F
T
- - 2 µA
- 200 µA
-
-
-
-
-
320
385
440
570
350
430
520
750
mV
- 4 6 pF
Forward current IF = f (VF)
T
= Parameter
A
BAT 64... EHB00057
2
10
mA
Ι
F
1
10
T
0
10
-1
10
-2
10
0 0.5
A
= -40
25
85
125
Reverse current IR = f (VR)
T
= Parameter
A
BAT 64... EHB00058
2
10
A
µ
Ι
R
1
10
C
C
C
C
1
V
V
F
0
10
-1
10
-2
10
-3
10
0102030
T
A
= 125
25
V
R
85
C
C
C
V
Oct-07-19992
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