HP MSA-0436-TR1, MSA-0435, MSA-0436-BLK Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0435, -0436
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 3.8 GHz
• 12.5 dBm Typical P
1 dB
at
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
Description
The MSA-0435 is a high performance silicon bipolar Monolithic
bias resistor for temperature and
current stability also allows bias
flexibility.
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Available in cut lead version
(package 36) as MSA-0436.
Typical Biasing Configuration
R
bias
35 micro-X Package
,
MAX
Note:
1. Short leaded 36 package available
upon request.
V
> 7 V
CC
[1]
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
d
= 5.25 V
C
block
5965-9575E
6-330
MSA-0435, -0436 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 100 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.1 mW/° C for TC > 109° C.
4. Storage above +150° C may tarnish the leads of this package making it
5. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
difficult to solder into a circuit.
accurate determination of q
MENTS section “Thermal Resistance” for more information.
[2,3]
650 mW
[4]
than do alternate methods. See MEASURE-
jc
–65 to 200° C
[1]
Thermal Resistance
θjc = 140°C/W
[2,5]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 50 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 3.8
Input VSWR f = 0.1 to 2.5 GHz 1.4:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 2.5 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 25.5
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.75 5.25 5.75
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0435 10 Strip
MSA-0436-BLK 100 Antistatic Bag
MSA-0436-TR1 1000 7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-331
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