HP MSA-0386-TR1, MSA-0386-BLK Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0386
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.4 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface
Mount Semiconductors”.
[1]
1 dB
at
The MSA-0386 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
86 Plastic PackageDescription
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9571E
V
> 7 V
CC
6-314
MSA-0386 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 115°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.7
3 dB Bandwidth GHz 2.4
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
[2,4]
:
> 116° C.
C
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0386-TR1 1000 7" Reel
MSA-0386-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-315
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