HP INA-03184-TR1, INA-03184-BLK Datasheet
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-03184
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.6 dB Typical at 1.5 GHz
• High Gain:
25 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
feedback amplifier housed in a
low cost surface mount plastic
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
DC to 2.5 GHz
• Unconditionally Stable
(k>1)
• Low Power Dissipation:
10 mA Bias
• Low Cost Plastic Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25␣ GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
Description
The INA-03184 is a low-noise
silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
1
C
(Optional)
bypass
RFC (Optional)
84 Plastic Package
, ISOSAT™-I silicon
MAX
V
CC
R
bias
C
block
RF IN RF OUT
Note:
1. VSWR can be improved by bypassing
a 100–120 Ω bias resistor directly to
ground. See AN-S012: Low Noise
Amplifiers.
4
3
1
2
V
= 4.0 V
d
(Nominal)
C
block
5965-9678E
6-108
INA-03184 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 25 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[2]
200 mW
[1]
Thermal Resistance:
θjc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/° C for T
> 130°C.
C
INA-03184 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 10 mA, Z
G
P
∆G
f
3 dB
ISO Reverse Isolation (|S
VSWR
Power Gain (|S21|2) f = 1.5 GHz dB 23.0 25.0
Gain Flatness f = 0.1 to 2.0 GHz dB ±0.8
P
3 dB Bandwidth
[2]
|2) f = 1.5 GHz dB 35
12
Input VSWR f = 0.01 to 2.0 GHz 2.0:1
Output VSWR f = 0.01 to 2.0 GHz 3.0:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
GHz 2.5
[3]
NF 50 Ω Noise Figure f = 1.5 GHz dB 2.6
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.5 GHz dBm –2.0
Third Order Intercept Point f = 1.5 GHz dBm 7
Group Delay f = 1.5 GHz psec 210
Device Voltage V 3.0 4.0 5.0
dV/dT Device Voltage Temperature Coefficient mV/°C+4
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (G
).
P
3. VSWR can be improved by bypassing a 100–200 Ω bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Part Number Ordering Information
Part Number No. of Devices Container
INA-03184-TR1 1000 7" Reel
INA-03184-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-109
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