HP INA-03170 Datasheet

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier

Technical Data

INA-03170

Features

• Cascadable 50 Ω Gain Block

• Low Noise Figure:

2.5 dB Typical at 1.5 GHz

• High Gain:

26.0 dB Typical at 1.5 GHz

• 3 dB Bandwidth:

feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth commercial, industrial
and military applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.

DC to 2.8 GHz

• Unconditionally Stable
(k>1)

• Low Power Dissipation

• Hermetic Gold-Ceramic
Surface Mount Package

The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25␣ GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-

Description

The INA-03170 is a low-noise
silicon bipolar Monolithic Micro-

tric and scratch protection to
achieve excellent performance,
uniformity and reliability.

wave Integrated Circuit (MMIC)

Typical Biasing Configuration

, ISOSAT™-I silicon

MAX

70 mil Package

> 7 V

V

RFC (Optional)

R

(Required)

bias

C

block

RF IN RF OUT

4

3

1

2

V

= 4.5 V

d

C

block

CC

6-105

5965-9677E

INA-03170 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 25 mA
Power Dissipation

[2,3]

200 mW

RF Input Power +13 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

[1]

Thermal Resistance

θjc = 150°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

CASE

= 25°C.

2. T

3. Derate at 6.7 mW/° C for T

4. See MEASUREMENTS section
“Thermal Resistance” for more

INA-03170 Electrical Specifications

[1]

, T

A

= 25° C

Symbol Parameters and Test Conditions: Id = 12 mA, Z

G

P

∆G

f

3 dB

ISO Reverse Isolation (|S

VSWR

Power Gain (|S21|2) f = 1.5 GHz dB 24.5 28.0 30.0

Gain Flatness f = 0.01 to 2.0 GHz dB ±0.5

P

3 dB Bandwidth

[2]

|2) f = 0.01 to 2.0 GHz dB 37

12

Input VSWR f = 0.01 to 2.0 GHz 2.0

Output VSWR f = 0.01 to 2.0 GHz 3.0

= 50 Ω Units Min. Typ. Max.

O

information.

GHz 2.8

NF 50 Ω Noise Figure f = 1.5 GHz dB 2.5 3.0

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.5 GHz dBm 1.0

Third Order Intercept Point f = 1.5 GHz dBm 10

Group Delay f = 1.5 GHz psec 200

Device Voltage f = 1.5 GHz V 4.0 5.3 6.0

dV/dT Device Voltage Temperature Coefficient mV/°C+5

Notes:

1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.

2. Referenced from 10 MHz Gain (G

).

P

3. VSWR can be improved by bypassing the bias directly to ground.

[2,4]

> 170° C.

C

[3]

[3]

:

INA-03170 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 12 mA)

d

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

0.05 .35 178 26.6 21.48 –4 –35.9 .016 9 .56 –1 1.24

0.10 .35 176 26.6 21.42 –7 –36.5 .015 6 .56 –4 1.29

0.20 .34 172 26.6 21.37 –14 –36.5 .015 –1 .56 –7 1.30

0.40 .34 164 26.5 21.19 –28 –36.5 .015 –5 .54 –13 1.33

0.60 .33 158 26.4 20.91 –41 –38.4 .012 2 .53 –18 1.58

0.80 .32 152 26.3 20.69 –54 –37.1 .014 5 .51 –22 1.46

1.00 .32 147 26.2 20.48 –67 –36.5 .015 4 .50 –27 1.41

1.20 .32 141 26.2 20.40 –80 –39.2 .011 13 .49 –32 1.79

1.40 .31 133 26.3 20.73 –93 –37.7 .013 25 .48 –38 1.57

1.60 .31 125 26.5 21.15 –106 –37.1 .014 28 .47 –45 1.47

1.80 .30 117 26.8 21.84 –121 –35.4 .017 30 .46 –52 1.28

2.00 .27 106 26.9 22.20 –138 –37.1 .014 33 .42 –62 1.48

2.50 .15 94 26.6 21.48 –177 –35.4 .017 23 .31 –79 1.44

3.00 .16 159 23.7 15.32 133 –34.4 .019 42 .16 –72 1.78

3.50 .28 150 19.8 9.81 99 –35.4 .017 28 .19 –60 2.71

6-106