HP ATF-10136-TR1, ATF-10136-STR Datasheet
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10136
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
VDS = 2 V, IDS␣ =␣ 20 mA
• High Associated Gain:
13.0 dB Typical at 4 GHz
• High Output Power:
20.0 dBm Typical P
at 4 GHz
1 dB
• Cost Effective Ceramic
Microstrip Package
• Tape-and Reel Packaging
Option Available
[1]
Electrical Specifications, T
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barriergate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
= 25° C
A
36 micro-X Package
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4
O
f = 4.0 GHz dB 0.5 0.6
f = 6.0 GHz dB 0.8
G
A
Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 11.0
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA
G
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0
Transconductance: VDS = 2 V, VGS = 0 V mmho 70 140
Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -4.0 -1.3 -0.5
5-23
5965-8701E
ATF-10136 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -7
Drain Current mA I
Power Dissipation
[2,3]
m W 430
Channel Temperature °C 175
Storage Temperature
[4]
°C -65 to +175
Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size
[5]
[1]
DSS
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-10136-TR1 1000 7"
ATF-10136-STR 10 STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25° C.
3. Derate at 2.9 mW/° C for
> 25°C.
T
CASE
4. Storage above +150° C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
jc
ATF-10136 Noise Parameters: V
Freq. NF
GHz dB
O
Mag Ang
= 2 V, IDS = 25 mA
DS
Γ
opt
0.5 0.35 0.93 12 0.80
1.0 0.4 0.85 24 0.70
2.0 0.4 0.70 47 0.46
4.0 0.5 0.39 126 0.36
6.0 0.8 0.36 -170 0.12
8.0 1.1 0.45 -100 0.38
ATF-10136 Typical Performance, T
18
15
G
2.0
1.5
(dB)
1.0
O
NF
0.5
NF
O
0
2.0 6.04.0 8.0 10.0 12.0
FREQUENCY (GHz)
A
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
12
(dB)
A
G
9
6
1.5
1.0
(dB)
O
0.5
NF
0
02010 40 5030 60
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2V, f = 4.0 GHz.
= 25° C
A
G
A
NF
O
IDS (mA)
DS.
RN/50
16
14
12
10
30
25
(dB)
A
G
20
15
GAIN (dB)
10
5
0
0.5 1.0 2.0 4.0
MSG
2
|S21|
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
MAG
6.0 8.0 12.0
5-24
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