Datasheet ATF-10136-TR1, ATF-10136-STR Datasheet (HP)

0.5 – 12 GHz Low Noise
Gallium Arsenide FET

Technical Data

ATF-10136

Features

• Low Noise Figure:

0.5 dB Typical at 4 GHz

• Low Bias:

VDS = 2 V, IDS␣ =␣ 20 mA

• High Associated Gain:

13.0 dB Typical at 4 GHz

• High Output Power:

20.0 dBm Typical P

at 4 GHz

1 dB

• Cost Effective Ceramic
Microstrip Package

• Tape-and Reel Packaging
Option Available

[1]

Electrical Specifications, T

Description

The ATF-10136 is a high performance
gallium arsenide Schottky-barrier­gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat­ing in the 0.5-12 GHz frequency range.

This GaAs FET device has a nominal

0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

= 25° C

A

36 micro-X Package

Symbol Parameters and Test Conditions Units Min. Typ. Max.

NF

Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4

O

f = 4.0 GHz dB 0.5 0.6
f = 6.0 GHz dB 0.8

G

A

Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5

f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 11.0

P

1 dB

Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA

G

1 dB

g

m

I

DSS

V

P

Note:

1.

Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0

Transconductance: VDS = 2 V, VGS = 0 V mmho 70 140

Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180

Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -4.0 -1.3 -0.5

5-23

5965-8701E

ATF-10136 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -7
Drain Current mA I
Power Dissipation

[2,3]

m W 430

Channel Temperature °C 175

Storage Temperature

[4]

°C -65 to +175

Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size

[5]

[1]

DSS

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

ATF-10136-TR1 1000 7"

ATF-10136-STR 10 STRIP

For more information, see “Tape and Reel Packaging for Semiconductor Devices.”

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25° C.

3. Derate at 2.9 mW/° C for

> 25°C.

T

CASE

4. Storage above +150° C may tarnish

the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely

stored up to 175°C.

5. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.

jc

ATF-10136 Noise Parameters: V

Freq. NF

GHz dB

O

Mag Ang

= 2 V, IDS = 25 mA

DS

Γ

opt

0.5 0.35 0.93 12 0.80

1.0 0.4 0.85 24 0.70

2.0 0.4 0.70 47 0.46

4.0 0.5 0.39 126 0.36

6.0 0.8 0.36 -170 0.12

8.0 1.1 0.45 -100 0.38

ATF-10136 Typical Performance, T

18

15

G

2.0

1.5

(dB)

1.0

O

NF

0.5

NF

O

0

2.0 6.04.0 8.0 10.0 12.0
FREQUENCY (GHz)

A

Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.

12

(dB)

A

G

9

6

1.5

1.0

(dB)

O

0.5

NF

0

02010 40 5030 60

Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2V, f = 4.0 GHz.

= 25° C

A

G

A

NF

O

IDS (mA)

DS.

RN/50

16

14

12

10

30

25

(dB)

A

G

20

15

GAIN (dB)

10

5

0

0.5 1.0 2.0 4.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.

MAG

6.0 8.0 12.0

5-24

Typical Scattering Parameters, Common Source, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, V

O

S

12

=2 V, I

DS

=␣ 25 mA

DS␣

S

MHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.5 .98 -18 14.5 5.32 163 -34.0 .020 78 .35 -9

1.0 .93 -33 14.3 5.19 147 -28.4 .038 67 .36 -19

2.0 .79 -66 13.3 4.64 113 -22.6 .074 59 .30 -31

3.0 .64 -94 12.2 4.07 87 -19.2 .110 44 .27 -42

4.0 .54 -120 11.1 3.60 61 -17.3 .137 31 .22 -49

5.0 .47 -155 10.1 3.20 37 -15.5 .167 13 .16 -54

6.0 .45 162 9.2 2.88 13 -14.3 .193 -2 .08 -17

7.0 .50 120 8.0 2.51 -10 -13.9 .203 -19 .16 45

8.0 .60 87 6.4 2.09 -32 -13.6 .210 -36 .32 48

9.0 .68 61 4.9 1.75 -51 -13.6 .209 -46 .44 38

10.0 .73 42 3.6 1.52 -66 -13.7 .207 -58 .51 34

11.0 .77 26 2.0 1.26 -82 -13.8 .205 -73 .54 27

12.0 .80 14 1.0 1.12 -97 -14.0 .200 -82 .54 15

36 micro-X Package Dimensions

2.15

(0.085)

GATE

SOURCE

1

SOURCE

4

101

2

DRAIN

2.11 (0.083) DIA.

3

0.508

(0.020)

22

1.45 ± 0.25

(0.057 ± 0.010)

0.56

(0.022)

Notes:

1. Dimensions are in millimeters (inches)

2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13

2.54

(0.100)

4.57 ± 0.25

0.180 ± 0.010

0.15 ± 0.05

(0.006 ± 0.002)

5-25