Datasheet ATF-44101 Datasheet (HP)

2–8 GHz Medium Power
Gallium Arsenide FET

Technical Data

ATF-44101

Features

• High Output Power:

32.0␣ dBm Typical P

• High Gain at 1 dB
Compression:

8.5␣ dB Typical G

• High Power Efficiency:

35% Typical at 4␣ GHz

• Hermetic Metal-Ceramic
Stripline Package

1 dB

at 4␣ GHz

1 dB

at 4␣ ␣ GHz

Description

The ATF-44101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica­tion in the 2 to 8 GHz frequency

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

P

G

η

g
I
V

1 dB

1 dB

add

m

DSS

P

Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 31.0 32.0
VDS =9 V, IDS = 500 mA f = 6.0 GHz 31.5

1 dB Compressed Gain: VDS = 9 V, IDS = 500 mA f = 4.0 GHz dB 7.5 8.5

Efficiency @ P
Transconductance: VDS = 2.5 V, IDS = 500 mA mmho 300
Saturated Drain Current: VDS = 1.75 V, VGS = 0 V m A 800 1300 1500
Pinch-off Voltage: VDS = 2.5 V, IDS = 2 5 mA V -5.4 -4.0 -2.0

1dB

: V

range. This nominally .5␣ micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between source fingers. Total gate
periphery is 5 millimeters. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.

This device is suitable for applica­tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.

= 25° C

A

= 9 V, I

DS

= 500 mA f = 4.0 GHz % 35

DS

100 mil Flange

f = 6.0 GHz 5.5

5-89

5965-8727E

ATF-44101 Absolute Maximum Ratings

FREQUENCY (GHz)

P

1 dB

(dBm)

Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 500 mA.

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 500 mA.

FREQUENCY (GHz)

GAIN (dB)

16

12

8

4

0

33

32

31

30

29

G

1 dB

(dBm)

2.0 6.04.0 8.0

P

1 dB

G

1 dB

|S21|

2

MSG

1.0 2.0 4.0 6.0

8.0 12.0

25

20

15

10

5

0

Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 500 mA, f = 4 GHz.

PIN (dBm)

P

OUT

(dBm)

η

add

(%)

0 5 10 15

20 25 30

35

30

25

20

15

10

5

0

40

30

20

10

0

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16
Drain Current mA I
Power Dissipation

[2,3]

W 6.5

Channel Temperature °C 175
Storage Temperature °C -65 to +175

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25° C.

3. Derate at 43 mW/°C for
T

> 25°C.

CASE

4. The small spot size of this tech­nique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.

jc

Thermal Resistance: θjc = 23°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

ATF-44101 Typical Performance, T

= 25° C

A

= 150°C

CH

[4]

5-90

Typical Scattering Parameters, Common Emitter, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, VDS=9 V, I

O

S

12

=␣ 500 mA

DS␣

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

1.0 .88 -125 13.4 4.69 104 -28.2 .039 31 .29 -154

2.0 .87 -161 8.1 2.53 74 -26.7 .046 21 .38 -164

3.0 .87 -178 4.8 1.73 54 -26.7 .046 22 .44 -167

4.0 .87 168 2.5 1.34 35 -25.7 .052 17 .47 -175

5.0 .88 153 0.8 1.10 16 -25.5 .053 13 .49 175

6.0 .88 136 -0.8 .91 -5 -23.6 .066 0 .52 160

7.0 .89 122 -2.5 .75 -25 -23.4 .068 -7 .56 144

8.0 .89 114 -4.2 .62 -39 -22.7 .073 -13 .62 132

9.0 .88 109 -5.5 .53 -52 -22.2 .078 -18 .68 124

10.0 .86 103 -6.7 .46 -64 -20.9 .090 -24 .72 118

11.0 .81 91 -6.9 .45 -78 -19.3 .108 -33 .73 112

12.0 .77 74 -7.5 .42 -95 -17.2 .138 -49 .73 101

A model for this device is available in the DEVICE MODELS section.

100 mil Flange Dimensions

.05

R, TYP

1.3

SOURCE

DRAIN

.062 DIA.

1.57 (2) PLCS

SOURCE

.12

3.0

3

.03

0.8

.42

10.7

.265

6.73

4

GATE

1

2

0.025 ± 0.003 mils

0.64 ± 0.08 mm

22

.044

1.12

.06

1.6

Package marking code is 441

.100

2.54

.300 min

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

in

mm

.004 ± .002

.10 ± .05

5-91