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0.5– 6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
70 mil Package
Description
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
Features
• Low Noise Figure:
0.9 dB Typical at 4␣ GHz
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power:
23.0␣ dBm Typical P
1 dB
at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25° C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 0.6
f = 4.0 GHz dB 0.9 1.1
f = 6.0 GHz dB 1.2
G
A
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 16.0
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.0
P
1 dB
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 23.0
VDS =5 V, IDS = 80 mA
G
1 dB
1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA f = 4.0 GHz dB 13.0
g
m
Transconductance: VDS =3 V, VGS = 0 V mmho 70 120
I
DSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V m A 80 120 200
V
P
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -1.5 -0.8
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applications in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8718E
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ATF-21170 Typical Performance, T
A
= 25° C
ATF-21170 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
DS
Drain-Source Voltage V +7
V
GS
Gate-Source Voltage V -4
V
GD
Gate-Drain Voltage V -8
I
DS
Drain Current mA I
DSS
P
T
Power Dissipation
[2,3]
mW 600
T
CH
Channel Temperature °C 175
T
STG
Storage Temperature °C -65 to +175
Thermal Resistance: θjc = 250°C/W; T
CH
= 150°C
Liquid Crystal Measurement: 1␣ µm Spot Size
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 4 mW/°C for
T
CASE
> 25°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-21170 Noise Parameters: V
DS
= 3 V, IDS = 20 mA
Freq. NF
O
Γ
opt
GHz dB
Mag Ang
RN/50
0.5 0.4 .93 17 .90
1.0 0.5 .85 35 .70
2.0 0.6 .70 70 .46
4.0 0.9 .59 148 .14
8.0 1.2 .54 -177 .09
FREQUENCY (GHz)
NF
O
(dB)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
1.0 4.02.0 6.0 8.0
G
A
NF
O
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS.
VDS = 3V, f = 4.0 GHz.
NF
O
(dB)
02010 40 5030 60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 3 V, IDS = 20 mA.
FREQUENCY (GHz)
GAIN (dB)
16
14
12
10
G
A
(dB)
1.5
1.0
0.5
0
G
A
NF
O
|S21|
2
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 10.0
25
20
15
10
5
0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
FREQUENCY (GHz)
GAIN (dB)
|S21|
2
MSG
MAG
30
25
20
15
10
5
0
0.5 1.0 2.0 4.0
6.0 8.0 10.0
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Typical Scattering Parameters, Common Emitter, Z
O
= 50 Ω, TA=25°C, V
DS
=3 V, I
DS␣
=␣ 20 mA
Freq. S
11
S
21
S
12
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .96 -31 15.5 5.93 157 -29.4 .034 72 .46 -23
1.0 .91 -55 14.2 5.14 137 -24.3 .061 56 .42 -42
2.0 .82 -95 12.1 4.05 106 -20.4 .096 36 .39 -70
3.0 .74 -123 10.2 3.23 82 -19.5 .106 21 .35 -91
4.0 .70 -147 8.8 2.74 61 -18.7 .116 9 .33 -109
5.0 .65 -170 7.3 2.33 41 -18.2 .123 -1 .30 -127
6.0 .64 167 6.3 2.07 22 -17.7 .131 -10 .29 -145
7.0 .65 146 5.4 1.86 4 -17.5 .134 -17 .26 -167
8.0 .66 126 4.5 1.67 -13 -17.0 .141 -28 .26 164
9.0 .66 107 3.4 1.48 -30 -16.6 .148 -39 .26 140
10.0 .67 87 2.2 1.29 -47 -16.2 .155 -50 .25 114
Typical Scattering Parameters, Common Emitter, Z
O
= 50 Ω, TA=25°C, V
DS
=5 V, I
DS␣
=␣ 80 mA
Freq. S
11
S
21
S
12
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .95 -43 18.3 8.24 149 -32.4 .024 67 .49 -17
1.0 .89 -64 17.4 7.28 133 -29.9 .032 59 .46 -26
2.0 .78 -106 14.6 5.36 101 -25.2 .055 44 .40 -45
3.0 .69 -133 12.4 4.18 79 -23.4 .068 34 .38 -60
4.0 .64 -160 10.7 3.42 56 -22.7 .073 31 .36 -81
5.0 .60 175 9.1 2.85 37 -21.7 .082 24 .35 -100
6.0 .61 154 7.9 2.47 18 -20.4 .095 19 .33 -115
7.0 .61 136 6.9 2.22 2 -19.3 .108 12 .31 -132
8.0 .63 120 6.2 2.05 -14 -17.9 .127 7 .27 -152
9.0 .64 102 5.3 1.85 -32 -16.6 .148 0 .27 -179
10.0 .64 86 4.5 1.68 -48 -15.3 .172 -13 .29 165
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
.020
.508
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are
in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.040
1.02
.035
.89
.004 ± .002
.10 ± .05
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