Page 1
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10100
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
VDS = 2 V, IDS␣ =␣ 25 mA
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P
at 4 GHz
1 dB
Description
The ATF-10100 is a high performance gallium arsenide Schottky-
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
barrier-gate field effect transistor
Electrical Specifications, T
Symbol Parameters and Test Conditions
NF
G
P
A
1 dB
Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.4
O
Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 17.0
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 21.0
= 25° C
A
[1]
VDS = 4 V, IDS = 70 mA
G
1 dB
g
m
I
DSS
V
P
Note:
1.
RF performance is determined by packaging and testing 10 devices per wafer
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 15.0
Transconductance: VDS = 2 V, VGS = 0 V mmho 80 140
Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -3.0 -1.3 -0.8
Chip Outline
GG
DSS
Units Min. Typ. Max.
f = 4.0 GHz dB 0.55 0.7
f = 6.0 GHz dB 0.8
f = 4.0 GHz dB 12.0 14.0
f = 6.0 GHz dB 12.0
.
5-19
5965-8702E
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ATF-10100 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -7
Drain Current mA I
Power Dissipation
[2,3]
m W 430
DSS
Channel Temperature ° C 175
Storage Temperature
[4]
°C -65 to +175
Thermal Resistance: θjc = 225°C/W; TCH = 150°C
Liquid Crystal Measurement: 1 µm Spot Size
[4]
Part Number Ordering Information
Part Number Devices Per Tray
ATF-10100-GP3 50
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25° C.
3. Derate at 4.4 mW/° C for
> 78°C.
T
CASE
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
jc
18
ATF-10100 Noise Parameters: V
Freq. NF
GHz dB
O
Mag Ang
= 2 V, IDS = 25 mA
DS
Γ
opt
1.0 0.4 0.78 13 0.40
2.0 0.4 0.55 27 0.29
4.0 0.55 0.39 65 0.22
6.0 0.8 0.41 105 0.16
8.0 1.0 0.46 144 0.10
ATF-10100 Typical Performance, T
G
A
1.5
1.0
(dB)
O
0.5
NF
0
0102030
NF
IDS (mA)
O
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2V, f = 4.0 GHz.
DS.
16
14
12
10
30
(dB)
A
G
20
GAIN (dB)
10
0
1.0 2.0 4.0 6.0
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
= 2 V, IDS = 25 mA.
DS
= 25° C
A
2
|S21|
FREQUENCY (GHz)
MSG
RN/50
8.0 10.0 12.0
MAG
G
2.0
1.5
(dB)
1.0
O
NF
0.5
NF
O
0
2.0 6.04.0 8.0 10.0 12.0
FREQUENCY (GHz)
A
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
30
20
GAIN (dB)
10
0
1.0 2.0 4.0 6.0
FREQUENCY (GHz)
|S21|
MSG
2
MAG
8.0 10.0 12.0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
15
12
(dB)
A
G
9
6
5-20
Page 3
Typical Scattering Parameters, Common Source, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=2 V, I
DS
=␣ 25 mA
DS␣
S
MHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 .93 -46 17.7 7.63 148 -25.5 .053 64 .33 -56
2.0 .83 -78 15.6 6.08 127 -21.4 .085 52 .31 -63
3.0 .78 -94 13.9 4.97 114 -19.8 .102 45 .30 -72
4.0 .72 -104 12.4 4.18 103 -18.7 .116 41 .29 -80
5.0 .70 -120 11.2 3.65 92 -17.9 .127 36 .25 -90
6.0 .68 -139 10.0 3.18 80 -17.6 .132 31 .19 -113
7.0 .71 -157 8.6 2.69 69 -17.5 .133 25 .18 -156
8.0 .72 168 7.4 2.35 60 -17.5 .133 22 .20 -178
9.0 .71 -177 6.5 2.12 53 -17.4 .135 19 .22 174
10.0 .70 175 6.0 1.99 46 -16.9 .143 17 .22 169
11.0 .70 167 5.5 1.88 38 -16.6 .148 15 .23 164
12.0 .70 162 5.0 1.77 31 -16.3 .154 13 .24 153
13.0 .70 159 4.5 1.68 25 -15.8 .162 11 .26 143
14.0 .70 155 4.1 1.61 20 -15.5 .168 10 .28 133
15.0 .73 149 3.9 1.56 14 -15.0 .177 8 .30 123
16.0 .77 138 3.2 1.45 5 -14.7 .184 6 .32 119
17.0 .76 134 1.8 1.23 0 -14.4 .190 5 .35 114
18.0 .77 134 1.3 1.16 -1 -13.9 .201 4 .38 106
22
Typical Scattering Parameters, Common Source, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=4 V, I
DS
=␣ 70 mA
DS␣
S
MHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 .87 -60 20.6 10.72 136 -26.4 .048 55 .33 -59
2.0 .74 -96 17.5 7.50 113 -23.5 .067 43 .29 -66
3.0 .72 -112 15.2 5.77 101 -22.2 .078 39 .28 -69
4.0 .67 -122 13.4 4.68 91 -21.3 .086 38 .27 -72
5.0 .67 -137 12.0 3.97 81 -20.6 .093 36 .24 -77
6.0 .68 -154 10.5 3.36 70 -20.3 .097 35 .17 -95
7.0 .73 -168 9.0 2.81 61 -20.1 .099 33 .13 -127
8.0 .74 -177 7.7 2.44 54 -19.8 .102 31 .12 -159
9.0 .75 175 6.8 2.19 47 -19.6 .105 31 .12 -165
10.0 .75 166 6.2 2.04 39 -18.9 .113 29 .13 -171
11.0 .75 156 5.6 1.90 32 -18.4 .120 27 .13 -177
12.0 .74 150 5.1 1.79 25 -17.9 .128 26 .14 173
13.0 .74 148 4.6 1.69 19 -16.9 .143 25 .15 166
14.0 .75 145 4.2 1.62 14 -16.2 .155 24 .17 154
15.0 .76 140 3.9 1.57 9 -15.7 .164 21 .21 142
16.0 .77 135 3.2 1.45 -1 -15.5 .168 18 .24 133
17.0 .79 130 1.8 1.23 -6 -15.3 .171 18 .28 125
18.0 .80 125 1.3 1.16 -6 -14.4 .191 18 .32 117
22
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Page 4
ATF-10100 Chip Dimensions
218 µm
218 µm
8.58 mil
32 µm
1.26 mil
DSS
218 µm
8.58 mil
304.8 µm
12 mil
Note: Die thickness is 4.5 mil, and backside metallization is
200 Å Ti and 2000 Å Au.
8.58 mil
GG
163 µm
6.42 mil
279.4 µm
11 mil
5-22
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