HIT 2SK2957-S Datasheet
2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-567D (Z)
5th. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 7mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
2SK2957(L),2SK2957(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
50 A
Drain peak current I
D(pulse)
Note1
200 A
Body-drain diode reverse drain current I
DR
50 A
Channel dissipation Pch
Note2
75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30——V I
D
= 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 30 V, VGS = 0
Gate to source leak current I
GSS
——±10 µAVGS = ±16V, VDS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
— 7.0 10 mΩ ID = 25A, VGS = 10V
Note3
Static drain to source on state
resistance
R
DS(on)
—1218mΩI
D
= 25A, VGS = 4V
Note3
Forward transfer admittance |yfs|2545—S I
D
= 25A, VDS = 10V
Note3
Input capacitance Ciss — 2000 — pF VDS = 10V
Output capacitance Coss — 1500 — pF VGS = 0
Reverse transfer capacitance Crss — 350 — pF f = 1MHz
Turn-on delay time t
d(on)
— 20 — ns VGS = 10V, ID = 25A
Rise time t
r
— 330 — ns RL = 0.4Ω
Turn-off delay time t
d(off)
— 190 — ns
Fall time t
f
— 190 — ns
Body–drain diode forward voltage V
DF
— 0.95 — V IF = 50A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— 60 — ns IF = 50A, VGS = 0
diF/ dt =50A/µs
Note: 3. Pulse test
2SK2957(L),2SK2957(S)
3
Main Characteristics
100
75
50
25
0
50 100 150 200
0.1 0.3 1
3
10
30
100
50
40
30
20
10
0
12345
50
40
30
20
10
0
246810
5 V
10 V
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
4 V
V = 2 V
GS
2.5 V
3.5 V
3 V
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Pulse Test
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