HIT 2SK2955 Datasheet
2SK2955
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-564B (Z)
3rd. Edition
Jun 1998
TO–3P
G
D
1. Gate
1
2
3
S
2. Drain
(Flange)
3. Source
2SK2955
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|2440—S ID = 20A, VDS = 10V
Input capacitance Ciss — 2200 — pF VDS = 10V
Output capacitance Coss — 1050 — pF VGS = 0
Reverse transfer capacitance Crss — 320 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 4. Pulse test
60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0
1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.010 0.013 Ω ID = 20A, VGS = 10V
— 0.015 0.025 Ω ID = 20A, VGS = 4V
— 25 — ns ID = 20A, VGS = 10V
— 200 — ns RL = 1.5Ω
— 320 — ns
— 240 — ns
— 0.95 — V IF = 45A, VGS = 0
— 60 — ns IF = 45A, VGS = 0
60 V
±20 V
45 A
180 A
45 A
45 A
173 mJ
100 W
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note4
Note4
Note4
2
Main Characteristics
2SK2955
200
150
100
Channel Dissipation Pch (W)
Power vs. Temperature Derating
50
50
40
0
10 V
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
6 V
5 V
4 V
Pulse Test
Maximum Safe Operation Area
1000
300
100
D
30
10
Operation in
3
this area is
Drain Current I (A)
0.3
0.1
50
40
limited by R
1
Ta = 25 °C
0.1 0.3 1
Drain to Source Voltage V (V)
Typical Transfer Characteristics
V = 10 V
DS
Pulse Test
10 µs
100 µs
PW = 10 ms (1shot)
DC Operation (Ta = 25°C)
DS(on)
3
10
1 ms
30
DS
100
D
30
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
3.5 V
3 V
V = 2.5 V
GS
DS
D
30
20
Drain Current I (A)
10
0
Gate to Source Voltage V (V)
Tc = 75°C
12345
25°C
–25°C
GS
3
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