Fairchild Semiconductor MOCD213-M Datasheet
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
DESCRIPTION
The MOCD213-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD213V-M)
• Dual Channel Coupler
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum Current Transfer Ratio 100% with Input Current of 10 mA
• Minimum BV
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
APPLICATIONS
•Feedback control circuits
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
of 70 Volts Guaranteed
CEO
AC(rms)
Guaranteed
OPTOCOUPLERS
MOCD213-M
ANODE 1
CATHODE 1
ANODE 2
CATHODE 2
1
2
3
4
8
COLLECTOR 1
EMITTER 1
7
6
COLLECTOR 2
5
EMITTER 2
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C Unless otherwise specified)
A
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
Forward Current - Peak (PW = 100 µs, 120 pps) I
Reverse Voltage V
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C 0.8 mW/°C
F
(pk) 1.0 A
F
R
P
D
60 mA
6.0 V
90 mW
DETECTOR
Collector-Emitter Voltage V
Emitter-Collector Voltage V
Collector Current-Continuous I
Detector Power Dissipation @ T
= 25°C
A
Derate above 25°C 1.76 mW/°C
CEO
ECO
C
P
D
70 V
7.0 V
150 mA
150 mW
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, 1 min. Duration)
Total Device Power Dissipation @ T
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
Storage Temperature Range T
(1,2,3)
= 25°C
A
V
ISO
P
D
A
stg
2500 Vac(rms)
250 mW
-40 to +100 °C
-40 to +125 °C
© 2002 Fairchild Semiconductor Corporation
Page 1 of 8
4/10/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise specified)
A
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage I
Reverse Leakage Current V
= 30 mA V
F
= 6.0 V I
R
F
R
— 1.25 1.55 V
— 0.001 100 µA
Capacitance C — 18 — pF
DETECTOR
= 10 V, T
V
Collector-Emitter Dark Current
CE
V
CE
= 10 V, T
Collector-Emitter Breakdown Voltage I
Emitter-Collector Breakdown Voltage I
Collector-Emitter Capacitance f = 1.0 MHz, V
= 25°C I
A
= 100°C I
A
= 100 µA BV
C
= 100 µA BV
E
= 0 V C
CE
CEO1
CEO2
CEO
ECO
CE
— 1.0 50 nA
— 1.0 — µA
70 120 — V
7.0 7.8 — V
— 7.0 — pF
COUPLED
Output Collector Current
Collector-Emitter Saturation Voltage I
Tu r n-On Time
Tu r n-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
Isolation Resistance
Isolation Capacitance
(4)
I
(1,2,3)
(2)
(2)
= 10 mA, V
F
= 2.0 mA, I
C
I
= 2.0 mA, V
C
R
L
I
= 2.0 mA, V
C
R
L
I
= 2.0 mA, V
C
R
L
= 2.0 mA, V
I
C
R
L
CE
= 10 mA V
F
= 10 V,
CC
= 100 Ω (fig 6.)
= 10 V,
CC
= 100 Ω (fig 6.)
= 10 V,
CC
= 100 Ω (fig 6.)
= 10 V,
CC
= 100 Ω (fig 6.)
f = 60 Hz, t = 1 min. V
V
= 500 V R
I-O
V
= 0 V, f = 1 MHz C
I-O
= 5 V CTR 100 — — %
CE (sat)
t
on
t
off
t
r
t
f
ISO
ISO
ISO
— 0.15 0.4 V
— 3.0 — µs
— 2.8 — µs
— 1.6 — µs
— 2.2 — µs
2500 — — Vac(rms)
11
10
—— Ω
— 0.2 — pF
** Typical values at T
= 25°C
A
NOTE:
1. Input-Output Isolation Voltage, V
, is an internal device dielectric breakdown rating.
ISO
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
rating of 2500 V
ISO
4. Current Transfer Ratio (CTR) = I
© 2002 Fairchild Semiconductor Corporation
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
/I
x 100%.
C
F
Page 2 of 8
AC(rms)
for t = 1 sec.
4/10/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD213-M
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
- FORWARD VOLTAGE (V)
F
V
1.1
1.0
110100
TA = -55°C
TA = 25°C
TA = 100°C
IF - LED FORWARD CURRENT (mA)
Fig. 3 Output Current vs. Ambient Temperature
10
1
Fig. 2 Output Curent vs. Input Current
10
VCE = 5V
NOR MALIZE D TO I
1
0.1
- OUTPU T COL LECT OR CURRENT (NORMALIZED)
C
I
0.01
0.1 1 1 0 100
= 10 mA
F
IF - LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
1.6
1.4
1.2
1.0
0.8
- OUTPU T COL LECT OR CU RRENT ( NOR MAL IZE D)
C
I
NORMALIZED TO TA = 25oC
0.1
-80 -60 -40 -2 0 0 20406080100120
TA - AMBIENT TEMPERATURE (oC)
Fig. 5 Dark Current vs. Ambient Temperature
10000
VCE=10V
1000
100
10
1
- COLLE CTOR -E MIT TER DA RK CU RRENT (nA)
CEO
I
0.1
020406080100
TA - AMBIENT TEMPERATURE (oC)
0.6
0.4
0.2
- OUTPUT COLLECTOR CURRE NT (N ORMAL IZED)
C
0.0
I
012345678910
VCE - COLLECTOR -EMITTER VOLTAGE (V)
IF = 10 mA
NORM ALIZE D TO V
= 5V
CE
© 2002 Fairchild Semiconductor Corporation
Page 3 of 8
4/10/03
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