Fairchild Semiconductor MOCD208M, MOCD207M Datasheet
FEATURES
• Dual Channel Optocoupler
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Two channels in one compact surface mount package
• Closely Matched Current Transfer Ratios to Minimize Unit-to-Unit Variation
• Minimum V
(BR)CEO
of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050” Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• Meets U.L. Regulatory Requirements, File #E90700, Volume 2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C Unless otherwise specified)
DESCRIPTION
The MOCD207M/MOCD208M consist of two silicon phototransistors optically coupled to two
GaAs infrared LEDs. These devices are constructed in a small outline surface mount package
which conforms to the standard SOIC-8 footprint.
Rating Symbol Value Unit
EMITTER
I
F
60 mA
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps) IF (pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ TA= 25°C
P
D
90 mW
Derate above 25°C 0.8 mW/°C
DETECTOR
V
CEO
70 V
Collector-Emitter Voltage
Collector-Base Voltage V
CBO
70 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ TA= 25°C
P
D
150 mW
Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2)
V
ISO
2500 Vac(rms)
(f = 60 Hz, 1 min. Duration)
Total Device Power Dissipation @ TA= 25°C
P
D
250 mW
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
A
-45 to +100 °C
Storage Temperature Range T
stg
-45 to +125 °C
Lead Soldering Temperature
T
L
260 °C
(1/16” from case, 10 sec. duration)
MOCD207M MOCD208M
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
2001 Fairchild Semiconductor Corporation
DS300270 12/19/01 1 OF 6 www.fairchildsemi.com
APPLICATIONS
• Feedback control circuits
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
ANODE 1
CATHODE 1
1
2
8
COLLECTOR 1
EMITTER 1
7
ANODE 2
3
6
CATHODE 2
4
5
COLLECTOR 2
EMITTER 2
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
I
F
= 30 mA V
F
All — 1.25 1.55 V
Input Forward Voltage
Reverse Leakage Current VR= 6.0 V I
R
All — 0.001 100 µA
Capacitance C All — 18 — pF
DETECTOR
Collector-Emitter Dark Current
V
CE
= 10 V, TA= 25°CI
CEO
All
— 1.0 50 nA
V
CE
= 10 V, TA= 100°CI
CEO
All
— 1.0 — µA
Collector-Emitter Breakdown Voltage IC= 100 µAV
(BR)CEO
All 70 100 — V
Emitter-Collector Breakdown Voltage IE= 100 µAV
(BR)ECO
All 7.0 10 — V
Collector-Emitter Capacitance f = 1.0 MHz, VCE= 0 V C
CE
All — 7.0 — pF
COUPLED
I
F
= 10 mA, VCE= 5 V
MOCD207 100 150 200
Current Transfer Ratio,
CTR
MOCD208
40 — 125
Collector to Emitter
(4)
IF= 1 mA, VCE= 5 V
MOCD207 34 ——
%
MOCD208 13 ——
Collector-Emitter Saturation Voltage IC= 2.0 mA, IF= 10 mA V
CE (sat)
All —
—
0.4 V
Turn-On Time IC= 2.0 mA, VCC= 10 V, RL= 100 Ω t
on
All — 3.0 — µs
Turn-Off Time IC= 2.0 mA, VCC= 10 V, RL= 100 Ω t
off
All — 2.8 — µs
Rise Time IC= 2.0 mA, VCC= 10 V, RL= 100 Ω t
r
All — 1.6 — µs
Fall Time IC= 2.0 mA, VCC= 10 V, RL= 100 Ω t
f
All — 2.2 — µs
Isolation Surge Voltage
(1,2)
f = 60 Hz, t = 1 min. V
ISO
All
2500 ——Vac(rms)
Isolation Resistance
(2)
V
I-O
= 500 V R
ISO
All
10
11
——!
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz C
ISO
All
— 0.2 — pF
ELECTRICAL CHARACTERISTICS (T
A
= 25°Cunless otherwise specified)
(3)
NOTE:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = I
C/IF
x 100%.
www.fairchildsemi.com 2 OF 6 12/19/01 DS300270
** Typical values at TA= 25°C
MOCD207M MOCD208M
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
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