Fairchild Semiconductor MOC8100-M Datasheet

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

2

1

3NC

5

6

4

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111 TIL111-M TIL117-M MOC8100-M

WHITE PACKAGE (-M SUFFIX)

SCHEMATIC

6

6

6

1

1

1

BLACK PACKAGE (NO -M SUFFIX)

6

6

6

1

1

1

DESCRIPTION

The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransis­tor in a 6-pin dual in-line package.

FEATURES

• The TIL111 is also available in both black and white packages by specifying -M suffix, e.g. TIL111-M for the white package and
no suffix for the black package.

• UL recognized (File # E90700)

• VDE recognized (File # 94766); (File #102497 for white package)

- Add option V for white package (e.g., TIL111V-M)

- Add option 300 for black package (e.g., TIL111.300)

APPLICATIONS

•Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

© 2003 Fairchild Semiconductor Corporation

Page 1 of 14

6/30/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111 TIL111-M TIL117-M MOC8100-M

(T

ABSOLUTE MAXIMUM RATINGS

Parameter Device Symbol Value Units

TOTAL DEVICE

Storage Temperature All T

Operating Temperature All T

Lead Solder Temperature All T

Total Device Power Dissipation @ T
Derate above 25°C

EMITTER

DC/Average Forward Input Current All I

Reverse Input Voltage

Forward Current - Peak (300µs, 2% Duty Cycle) All I

LED Power Dissipation @ T

= 25 °C

A

Derate above 25°C

DETECTOR

Collector-Emitter Voltage All V

Collector-Base Voltage All V

Emitter-Collector Voltage TIL111-M/TIL117-M V

Emitter-Base Voltage All V

Detector Power Dissipation @ T
Derate above 25°C

= 25°C

A

= 25 °C

A

= 25°C unless otherwise specified)

A

STG

OPR

SOL

All P

TIL111/TIL111-M

MOC8100-M/TIL117-M 6

All P

All P

D

F

V

R

(pk) 3 A

F

D

CEO

CBO

ECO

EBO

D

-55 to +150 °C

-55 to +100 °C

260 for 10 sec °C

3.3 (non-M) 2.94 (-M) mW/°C

100 (non-M), 60 (-M) mA

150 (non-M), 120 (-M) mW

2.0 (non-M), 1.41 (-M) mW/°C

2.0 (non-M), 1.76 (-M) mW/°C

250 mW

3

V

30 V

70 V

7

7

V

150 mW

© 2003 Fairchild Semiconductor Corporation

Page 2 of 14

6/30/03

Ω

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111 TIL111-M TIL117-M MOC8100-M

(T

ELECTRICAL CHARACTERISTICS

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Device Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage (I

Reverse Leakage Current

DETECTOR

Collector-Emitter Breakdown Voltage (I

Collector-Base Breakdown Voltage (I

Emitter-Base Breakdown Voltage (I

Emitter-Collector Breakdown Voltage (I

Collector-Emitter Dark Current

Collector-Base Dark Current

Capacitance (V

= 16 mA) (T

F

(I

= 10 mA; for

F

MOC8100-M)

(I

= 16 mA; for

F

TIL117-M)

(V

= 30 V, I

CE

= 25°C unless otherwise specified)

A

= 25°C) TIL111/TIL111-M

A

(T

= 0-70°C)

A

(T

= -55°C) 1.32

A

(T

= +100°C) 1.10

A

= 3.0 V)

(V

R

(V

= 6.0V) MOC8100-M 0.001 10 µA

R

= 1.0 mA, I

C

= 10 µA, I

C

= 10 µA, I

E

= 100µA, I

F

(V

= 10 V, I

CE

(V

= 5V, T

CE

= 0, T

F

(V

= 0 V, f = 1 MHz) All C

CE

= 0) All BV

F

= 0) All BV

F

= 0) All BV

F

= 0)

F

= 0)

F

= 25°C) MOC8100-M I

A

= 70°C)

A

= 10 V)

CB

= 5 V) MOC8100-M I

(V

CB

MOC8100-M/

TIL117-M

TIL111/TIL111-M/

TIL117-M

TIL111-M
TIL117-M

TIL111/TIL111-M/

TIL117-M

TIL117-M/

MOC8100-M

TIL111/TIL111-M/

TIL117-M

BV

V

I

I

CEO

CEO

I

CEO

I

CBO

CBO

F

0.001 10 µA

R

30 100 V

CEO

70 120 V

CBO

EBO

ECO

CE

710 V

710 V

1.2 1.4

1.2 1.4
V

1 50 nA

0.5 25 nA

0.2 50 µA

20 nA

10 nA

8pF

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage

(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)

(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)

Isolation Resistance (V

Isolation Capacitance (V

Note
* Typical values at T

© 2003 Fairchild Semiconductor Corporation

= 25°C unless otherwise noted

A

Page 3 of 14

= 500 VDC) R

I-O

= 0, f = 1 MHz) C

I-O

V

ISO

ISO

ISO

5300 Vac(rms)

11

10

2pF

6/30/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111 TIL111-M TIL117-M MOC8100-M

(T

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

(I

= 10 mA, V

Current Transfer Ratio,
Collector to Emitter

(I

On-State Collector Current
(Phototransistor Operation)

On-State Collector Current
(Photodiode Operation)

Collector-Emitter Saturation
Voltage

AC Characteristic

F

(I

= 1 mA, V

F

(I

F

(I

F

(I

C

C

(I

C

= 1 mA, V

F

= 16 mA, V

= 16 mA, V

= 500 µA, I

= 2 mA, I

= 100 µA, I

= 25°C Unless otherwise specified.)

A

= 10 V)

CE

CTR

I

C(ON)

V

CE (SAT)

= 5 V, T

CE

= 5 V)

CE

= 0 to +70°C) 30

A

= 0.4 V)

CE

= 0.4V) 7 µA

CB

= 10 mA)

F

= 16 mA)

F

= 1 mA) MOC8100-M 0.5

F

CE

TIL117-M 50 %

MOC8100-M

TIL111

50

2mA

TIL111-M

TIL117-M 0.4

TIL111

TIL111-M

0.4

%

V(I

Tu r n-On Time

(I

= 2 mA, V

Tu r n-Off Time T

C

R

= 100 Ω ) (Fig. 20)

L

= 10 V,

CC

Rise Time t

Fall Time t

Rise Time
(Phototransistor Operation)

Fall Time

(I

= 2 mA, V

C(ON)

R

= 100 Ω ) (Fig. 20)

L

= 10 V,

CC

(Phototransistor Operation)

* Typical values at T

= 25°C

A

T

ON

OFF

r

f

t

r

t

f

MOC8100-M 20

TIL117-M 10

MOC8100-M 20

TIL117-M 10

MOC8100-M

TIL117-M

TIL111

TIL111-M

2

2

10 µs

µs

µs

µs

© 2003 Fairchild Semiconductor Corporation

Page 4 of 14

6/30/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111 TIL111-M TIL117-M MOC8100-M

TYPICAL PERFORMANCE CURVES

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0

110100

(Black Package)

TA = -55°C

TA = 25°C

TA = 100°C

IF - LED FORWARD CURRENT (mA)

Fig.3 Normalized CTR vs. Forward Current

1.4
VCE = 5.0V

= 25°C

T

A

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

051015 20

(Black Package)

Normalized to

= 10 mA

I

F

IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA)

Fig. 2 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0

110100

(White Package)

TA = -55°C

TA = 25°C

TA = 100°C

IF - LED FORWARD CURRENT (mA)

Fig.4 Normalized CTR vs. Forward Current

1.6
VCE = 5.0V

= 25°C

T

A

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

02468101214 16 18 20

(White Package)

Normalized to
I

F

= 10 mA

Fig. 5 Normalized CTR vs. Ambient Temperature

1.6

1.4

1.2

1.0

0.8

NORMALIZED CTR

0.6
Normalized to

= 10 mA

I

F

= 25°C

T

A

0.4

-75 -50 -25 0 25 50 75 100 125

(Black Package)

IF = 20 mA

TA - AMBIENT TEMPERATURE (°C) TA - AMBIENT TEMPERATURE (°C)

© 2003 Fairchild Semiconductor Corporation

IF = 5 mA

IF = 10 mA

NORMALIZED CTR

Page 5 of 14

Fig. 6 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Normalized to
I

F

T

-60 -40 -20 0 20 40 60 80 100

= 10 mA

= 25°C

A

(White Package)

IF = 5 mA

IF = 10 mA

IF = 20 mA

6/30/03