Fairchild Semiconductor MOC70P2, MOC70P3, MOC70P1 Datasheet
0.250 [6.35]
0.510 [12.95]
0.020 [0.51] 4 X
0.380 [9.65]
0.140 [3.56]
0.105 [2.67]
0.100 [2.54]
0.080 [2.03] NOM
0.270 [6.86]
PIN 3 (COLLECTOR)
PIN 4 (EMITTER)
PIN 2 CATHODE
PIN 1 (ANODE)
0.050 [1.27]
SEATING PLANE
C
L
0.506 [12.85]
0.153 [3.89] 2X
0.200 [5.08] NOM
NOTES
1. Derate power dissipation linearly, on each component, 1.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as
cleaning agents.
4. Soldering iron tip 1/16” (1.6mm) from housing.
5. As long as leads are not under any stress or spring tension.
FEATURES
• No contact sensing
• 5 mm gap
• .040” aperture
• Low profile
• PCB mount
• Transistor output
SCHEMATIC
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PACKAGE DIMENSIONS
MOC70P1 / MOC70P2 / MOC70P3
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
Parameter Symbol Rating Units
Operating Temperature T
OPR
-55 to +100 °C
Storage Temperature T
STG
-55 to +100 °C
Soldering Temperature (Iron)
(2,3,4,5)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3,5)
T
SOL-F
260 for 10 sec °C
EMITTER
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
6V
Power Dissipation
(1)
P
D
100 mW
SENSOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
4.5 V
Collector Current I
C
20 mA
Power Dissipation
(1)
P
D
150 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
2001 Fairchild Semiconductor Corporation
DS300009 4/25/01 1 OF 5 www.fairchildsemi.com
DESCRIPTION
The MOC70PX consists of an infrared
light emitting diode coupled to an
NPN silicon phototransistor packaged
into an injection molded housing. The
housing is designed for wide gap, non
contact sensing.
14
2 3
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA= 25°C )
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
Forward Voltage I
F
= 50 mA V
F
——1.8 V
Reverse Leakage Current VR= 6 V I
R
——100 µA
SENSOR
Collector-Emitter Breakdown Voltage I
C
= 10 mA BV
CEO
30 —— V
Emitter-Collector Breakdown Voltage IE= 100 µA BV
ECO
4 —— V
Collector-Emitter Leakage VCE= 10 V, IF= 0 I
CEO
——100 nA
COUPLED
I
C(ON)
Collector Current (See selection guide below)
Collector Emitter
V
CE (SAT)
Saturation Voltage ( See selection guide below)
Turn-on Time IF= 30 mA, VCC= 5 V, RL = 2.5 k1 t
(ON)
— 20 — µs
Turn-off Time IF= 30 mA, VCC= 5 V, RL = 2.5 k1 t
(OFF)
— 80 — µs
www.fairchildsemi.com 2 OF 5 4/25/01 DS300009
MOC70PX OPTICAL SWITCH SELECTION GUIDE
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
ON-STATE COLLECTOR CURRENT
MOC70P1 I
F
= 5 mA, VCE= 10 V I
C(ON)
0.15 —— mA
MOC70P2 IF= 5 mA, VCE= 10 V I
C(ON)
0.30 —— mA
MOC70P3 IF= 5 mA, VCE= 10 V I
C(ON)
0.60 —— mA
MOC70P1 IF= 20 mA, VCE= 10 V I
C(ON)
1.0 —— mA
MOC70P2 IF= 20 mA, VCE= 10 V I
C(ON)
2.0 —— mA
MOC70P3 IF= 20 mA, VCE= 10 V I
C(ON)
4.0 —— mA
MOC70P1 IF= 30 mA, VCE= 10 V I
C(ON)
1.9 —— mA
MOC70P2 IF= 30 mA, VCE= 10 V I
C(ON)
3.0 —— mA
MOC70P3 IF= 30 mA, VCE= 10 V I
C(ON)
5.5 —— mA
COLLECTOR-EMITTER SATURATION VOLTAGE
MOC70P1 I
F
= 1.8 mA, IF= 30 mA V
CE (SAT)
——0.40 V
MOC70P2 IF= 1.8 mA, IF= 20 mA V
CE (SAT)
——0.40 V
MOC70P3 IF= 1.8 mA, IF= 20 mA V
CE (SAT)
——0.40 V
MOC70P1 / MOC70P2 / MOC70P3
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
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