Fairchild Semiconductor MMPQ2222, MMBT2222A, PZT2222A Datasheet
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
g
PN2222A
C
B
E
SOIC-16
E1
TO-92
E2
B1
B2
E3
pin #1
B3
C1
B4
E4
C1
MMBT2222A
C
SOT-23
Mark: 1P
C4
C4
C3
C3
C2
C2
NPN General Purpose Amplifier
B
E
NMT2222MMPQ2222
E1
C1
SOT-6
Mark: .1B
C2
PZT2222A
C
SOT-223
E2
B1
B2
B
E
C
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
Collector-Emitt er Vol t age 40 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 1.0 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
(BR)
(BR)
(BR)
µ
µ
)
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CEX
I
CBO
I
EBO
I
BL
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current V
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
= 60 V, V
CE
Collector Cutoff Current VCB = 60 V, I
= 60 V, I
V
CB
Emitter Cutoff Current VEB = 3.0 V, I
Base Cutoff Current VCE = 60 V, V
DC Current Gain IC = 0.1 mA, VCE = 10 V
= 1.0 mA, VCE = 10 V
I
C
= 10 mA, VCE = 10 V
I
C
= 10 mA, VCE = 10 V, TA = -55°C
I
C
= 150 mA, VCE = 10 V*
I
C
= 150 mA, VCE = 1.0 V*
I
C
= 500 mA, VCE = 10 V*
I
Collector-Emitter S aturation
)
Voltage*
Base-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
)
C
IC = 150 mA, IB = 15 mA
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
= 3.0 V 10 nA
EB(OFF)
= 0
E
= 0, TA = 150°C
E
= 0 10 nA
C
= 3.0 V 20 nA
EB(OFF)
75 V
6.0 V
35
50
75
35
100
50
40
0.6 1.2
0.01
10
300
0.3
1.0
2.0
A
A
V
V
V
V
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222)
f
T
C
obo
C
ibo
rb’C
C
NF Noise Figure
Re(h
ie
Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz
Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 8.0 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 25 pF
Collector Base Time Consta n t IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS
I
Real Part of Common-Emitter
)
= 100 µA, V
C
R
= 1.0 kΩ, f = 1.0 kHz
S
IC = 20 mA, VCE = 20 V, f = 300 MHz 60
= 10 V,
CE
High Frequency Input Impeda nce
4.0 dB
SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222)
t
d
t
r
t
s
t
f
Delay Time VCC = 30 V, V
Rise Time IC = 150 mA, IB1 = 15 mA 25 ns
Storage Time VCC = 30 V, IC = 150 mA, 225 ns
Fall Time IB1 = IB2 = 15 mA 60 ns
= 0.5 V, 10 ns
BE(OFF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 V af=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
Ω
Loading...