Fairchild Semiconductor MM74HCT04SJX, MM74HCT04N, MM74HCT04M, MM74HCT04MTC, MM74HCT04MTCX Datasheet
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February 1984
Revised February 1999
MM74HCT04 Hex Inverter
© 1999 Fairchild Semiconductor Corporation DS005357.prf www.fairchildsemi.com
MM74HCT04
Hex Inverter
General Description
The MM74HCT04 is a logic function fabricated by using
advanced silicon-gate CMOS technology which provides
the inherent benefits of CM OS - low quiescent power a nd
wide power supply range. This device is input and outp ut
characteristic as well as p in-out compatible with stan dard
74LS logic families. The MM74HCT04, triple buffered, hex
inverters, features low power dissipation and fast switching
times. All inputs are protected from static discharge by
internal diodes to V
CC
and ground.
MM74HCT devices are intended to i nterface between TTL
and NMOS components and standard CMOS devices.
These parts are also plug-in replacements for LS-TTL
devices and can be used to redu ce power consumption in
existing designs.
Features
■ TTL, LS pin-out and threshold compatible
■ Fast switching: t
PLH
, t
PHL
=12 ns (typ)
■ Low power: 10 µW at DC, 3.7 mW at 5 MHz
■ High fanout: ≥ 10 LS loads
■ Inverting, triple buffered
Ordering Code:
Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.
Connection Diagram
Pin Assignments for DIP, SOIC, SOP and TSSOP
Top View
Order Number Package Number Package Description
MM74HCT04M M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow
MM74HCT04SJ M14D 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
MM74HCT04MTC MTC14 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide
MM74HCT04N N14A 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide
www.fairchildsemi.com 2
MM74HCT04
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings are those values beyond which dam-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to gro und.
Note 3: Power Dissipation temperat ure derat ing — plas tic “N” p ackage: −
12 mW/°C from 65 °C to 85°C.
DC Electrical Characteristics
V
CC
= 5V ±10% (unless otherwise specified)
Note 4: This is measured per input with all oth er inputs held at VCC or ground.
Supply Voltage (VCC) −0.5 to +7.0V
DC Input Voltage (V
IN
) −1.5 to V
CC
+1.5V
DC Output Voltage (V
OUT
) −0.5 to V
CC
+0.5V
Clamp Diode Current (I
IK
, IOK) ±20 mA
DC Output Current, per pin (I
OUT
) ±25 mA
DC V
CC
or GND Current, per pin (ICC) ±50 mA
Storage Temperature Range (T
STG
) −65°C to +150°C
Power Dissipation (P
D
)
(Note 3) 600 mW
S.O. Package only 500 mW
Lead Temperature (T
L
)
(Soldering 10 seconds) 260°C
Min Max Units
Supply Voltage (V
CC
)4.55.5V
DC Input or Output Voltage
(V
IN
, V
OUT
)0V
CC
V
Operating Temperature Range (T
A
) −40 +85 °C
Input Rise or Fall Times
(t
r
, tf) 500 ns
Symbol Parameter Conditions
TA = 25°CTA = −40 to 85°CTA = −55 to 125°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH Level 2.0 2.0 2.0 V
Input Voltage
V
IL
Maximum LOW Level 0.8 0.8 0.8 V
Input Voltage
V
OH
Minimum HIGH Level V
IN
= V
IL
Output Voltage |I
OUT
| = 20 µAV
CCVCC
− 0.1 V
CC
− 0.1 V
CC
− 0.1 V
|I
OUT
| = 4.0 mA, V
CC
= 4.5V 4.2 3.98 3.84 3.7 V
|I
OUT
| = 4.8 mA, V
CC
= 5.5V 5.2 4.98 4.84 4.7 V
V
OL
Maximum LOW Level V
IN
= V
IH
Voltage |I
OUT
| = 20 µA 0 0.1 0.1 0.1 V
|I
OUT
| = 4.0 mA, V
CC
= 4.5V 0.2 0.26 0.33 0.4 V
|I
OUT
| = 4.8 mA, V
CC
= 5.5V 0.2 0.26 0.33 0.4 V
I
IN
Maximum Input V
IN
= VCC or GND, ±0.1 ±1.0 ±1.0 µA
Current VIH or V
IL
I
CC
Maximum Quiescent V
IN
= VCC or GND 2.0 20 40 µA
Supply Current I
OUT
= 0 µA
V
IN
= 2.4V or 0.5V (Note 4) 0.3 0.4 0.5 mA
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