Fairchild Semiconductor KSR2103 Datasheet
KSR2103
KSR2103
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=22KΩ, R2=22KΩ)
1
(Bias Resistor Built In)
3
• Complement to KSR1103
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
R1
R53
B
R2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -10 V
Collector Current -100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
SOT-23
1
2
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V
V
CE
f
T
C
ob
V
(off) Input Off Voltage VCE= -5V, IC= -100µA-0.5 V
I
(on) Input On Voltage VCE= -0.3V, IC= -5mA -3.0 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A3, November 2002
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V
Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V
Collector Cutoff Current VCB= -40V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -5mA 56
Current Gain Bandwidth Product VCE= -10V , IC= -5mA 200 MHz
Output Capacitance VCB= -10V , IE=0
5.5 pF
f=1.0MHz
Input Resistor 15 22 29 KΩ
Resistor Ratio 0.9 1 1.1
Typical Characteristics
KSR2103
-1000
-100
, DC CURRENT GAIN
FE
h
-10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Input On Voltage
-1000
-100
VCE = - 5V
R1 = 22K
R2 = 22K
VCE = - 5V
R1 = 22K
R2 = 22K
-100
VCE = - 0.3V
R1 = 22 K
R2 = 22 K
-10
-1
(on)[V], INPUT VOLTAGE
I
V
-0.1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
280
240
200
160
120
A], COLLECTOR CURRENT
µ
[
C
I
-10
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
VI(OFF)[V] , INPUT OFF VOLTAGE
Figure 3. Input Off Voltage Figure 4. Power Derating
80
[mW], POWER DISSIPATION
C
40
P
0
0 255075100125150175
Ta[oC], AMBIENT TEMPERATURE
©2002 Fairchild Semiconductor Corporation
Rev. A3, November 2002
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