Fairchild Semiconductor KSP24 Datasheet
VHF Transistor
KSP24
KSP24
1
1. Base 2. Emitter 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
EBO
I
C
P
C
T
J
T
STG
(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
R
TH
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4.0 V
Collector Current 100 mA
Collector Power Dissipation (Ta=25°C) 350 mW
Derate Above 25°C2.8mW/°C
Junction Temperature 135 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
h
f
T
C
G
G
CBO
CEO
EBO
FE
ob
CE
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4.0 V
Collector Cut-off Current VCB=15V, IE=0 50 nA
DC Current Gain VCE=10V, IC=8mA 30
Current Gain Bandwidth Product VCE=10V, IC=8mA,
Output Capacitance VCB=10V, IE=0, f=1MHz 0.25 0.36 pF
Conversion Gain (213 to 45MHz) VCC=20V, IC=8mA
Conversion Gain (60 to 45MHz) VCC=20V, IC=8mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
400 620 MHz
f=100MHz
19 24 dB
Oscillator Injection=150mV
24 29 dB
Oscillator Injection=150mV
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
KSP24
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10k
1k
100
VCE = 10V
VCE = 10V
f = 100MHz
10000
1000
100
(sat)[mA], SATURATION VOLTAGE
BE
(sat),V
10
CE
0.1 1 10 100 1000
V
VBE(sat)
VCE(sat)
IC = 10I
B
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
OSCInj = 150mVrms
30
20
[dB], CONVERSION GAIN
10
PC
G
f
= 60MHz,
sig
f
= 104MHz
osc
f
= 213MHz,
sig
f
= 275MHz
osc
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
0
0 2 4 6 8 10 12 14 16
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product Figure 4. Conversion Gain versus Collector Current
40
IC = 8mA
DC
30
20
[dB], CONVERSION GAIN
10
PC
G
0
0 100 200 300 400
Vi[mV], OSCILLATION INJEC TION
f
= 60MHz,
sig
f
= 104MHz
osc
f
= 213MHz,
sig
f
= 275MHz
osc
50
213MHz
40
30
20
Ω
[ ], INPUT ADMITTANCE
ie
10
y
0
0 2 4 6 8 10 12 14 16 18 20
60MHz
b
ie
IC[mA], COLLECTOR CURRENT
Figure 5. Conversion Gain versus Injection Level Figure 6. Input Admittance
©2001 Fairchild Semiconductor Corporation
g
ie
g
ie
b
ie
Rev. A1, June 2001
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