General Purpose Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Refer KSP2222 for graphs
= 40V
CEO
(max)=625mW
C
KSP2222A
KSP2222A
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
CE
(sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA
V
BE
f
T
C
ob
t
ON
t
OFF
NF Noise Figure I
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2222A
Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V
Collector Emitter Breakdown Voltage IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=60V, IE=0 0.01 µA
Emitter Cut-off Current VEB=3V, IC=0 10 nA
DC Current Gain IC=0.1mA, VCE=10V
Current Gain Bandwidth Product VCE=20V, IC=20mA
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
Turn On Time VCC=30V, IC=150mA
Turn Off Time VCC=30V, IC=150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=10V, IC=1mA
V
CE
=10V, IC=10mA
V
CE
V
=10V, *IC=150mA
CE
=10V, *IC=500mA
V
CE
=500mA, IB=50mA
I
C
I
=500mA, IB=50mA
C
f=100MHz
=15mA, VBE(off)=0.5V
I
B1
I
=15mA
B1=IB2
=100µA, VCE=10V
C
=IKΩ, f=1KHz
R
S
35
50
75
100
300
40
0.3
1
0.6 1.2
2
300 MHz
35 ns
285 ns
4dB
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
KSP2222A
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001