Fairchild Semiconductor KSP14, KSP13 Datasheet
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
CES
=30V
(max)=625mW
C
KSP13/14
KSP13/14
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CES
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 10 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CES
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA 1.5 V
V
CE
(on) Base-Emitter On Voltage VCE=5V, IC=100mA 2.0 V
V
BE
f
T
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 30 V
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=10V, IC=0 100 nA
* DC Current Gain
Current Gain Bandwidth Product VCE=5V, IC=10mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
: KSP13
=5V, IC=10mA
V
CE
: KSP14
V
: KSP13
: KSP14
=5V, IC=100mA
CE
f=100MHz
5K
10K
10K
20K
125 MHz
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP13/14
1M
100k
10k
, DC CURRENT GAIN
FE
h
1k
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
VCE = 5V
VCE = 5V
VBE(sat)
VCE(sat)
IC = 1000 I
B
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
100
VCE = 5V
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Rev. A2, September 2002
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