Fairchild Semiconductor KSP10 Datasheet
VHF/UHF transistor
KSP10
KSP10
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
P
CBO
CEO
EBO
C
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.0 V
Collector Power Dissipation (Ta=25°C) 350 mW
Derate above 25°C2.8mW/°C
P
T
T
C
J
STG
Collector Power Dissipation (T
Derate above 25°C8.0W/°C
Junction Temperature 150 °C
Storage Temperature -55~150 °C
Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W
Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V
V
CE
(on) Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V
V
BE
f
T
C
ob
C
rb
C
c·rbb´
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 3.0 V
Collector Cut-off Current VCB=25V, IE=0 100 nA
Emitter Cut-off Current VEB=2V, IC=0 100 nA
DC Current Gain VCE=10V, IC=4mA 60
Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 p F
Collector Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.65 pF
Collector Base Time Constant VCB=10V, IC=4mA,
Ta=25°C unless otherwise noted
=25°C) 1.0 W
C
Ta=25°C unless otherwise noted
f=31.8MHz
9.0 ps
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP10
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10000
1000
100
10
1 10 100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE = 10V
VCE = 10V
f=100MHz
VCE(sat)
VBE(sat)
IC = 10 I
B
10000
1000
100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
10
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
140
120
100
80
60
Ω
40
[ ], INPU T A DMIT T ANCE
ib
y
20
100 1000
-b
ib
g
ib
f[MHz] , F REQUENCY
Figure 3. Current Gain Bandwidth Product Figure 4. Rectangular Form
gib[ ]
400
Ω
200
0
-10
-20
1000MHz
-30
-40
Ω
[ ], OUTPUT ADMITTANCE
ob
y
-50
-60
0 102030405060708090
700
100
100
90
80
70
60
50
40
30
20
10
0
-10
Ω
[ ], FORWARD TRANSFE R AD M ITTA NC E
-20
fb
y
-30
100 1000
b
fb
-g
fb
f[MHz], FREQUENCY
Figure 5. Polar Form Figure 6. Rect an gular Form
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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