Fairchild Semiconductor KSP06, KSP05 Datasheet
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to KSP55/56
(max)=625mW
C
= KSP05: 60V
CEO
KSP06: 80V
KSP05/06
KSP05/06
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector Base Voltage
V
V
I
P
T
T
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Emitter-Base Voltage 4 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.25 V
V
CE
(on) Base-Emitter On Voltage VCE=1V, IC=100mA 1.2 V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE=100µA, IC=0 4 V
Collector Cut-off Current
Collector Cut-off Current VCE=60V, IB=0 0.1 µA
DC Current Gain V
Current Gain Bandwidth Product VCE=2V, IC=10mA
Ta=25°C unless otherwise noted
: KSP05
: KSP06
: KSP05
: KSP06
Ta=25°C unless otherwise noted
IC=1mA, IB=0
: KSP05
: KSP06
: KSP05
: KSP06
=60V, IE=0
V
CB
=80V, IE=0
V
CB
=1V, IC=10mA
CE
V
=1V, IC=100mA
CE
f=100MHz
60
80
60
80
60
80
0.1
0.1
50
50
100 MHz
V
V
V
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP05/06
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1000
100
VCE = 1V
VCE = 1V
VBE(sat)
VCE(sat)
IC = 10 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
100
VCE = 2V
10
A], COLLECTOR CURRENT
µ
[
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
10
1 10 100 1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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