Fairchild Semiconductor KSK596 Datasheet
KSK596
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
KSK596
1
1.Source 2. Gate 3. Drain
TO-92S
Si N-channel Junction FET
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
I
I
P
T
T
GDO
G
D
D
J
STG
Gate-Drain Voltage -20 V
Gate Current 10 mA
Drain Current 1 mA
Power Dissipation 100 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GDO
(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 V
V
GS
I
DSS
l Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 ms
lY
FS
C
iss
C
rss
Gate-Drain Breakdown Voltage IG= -100uA -20 V
Drain Current VDS=5V, VGS=0 100 350 µA
Input Capacitance VDS=5V , VGS=0, f=1MHz 3.5 pF
Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
I
Classification
DSS
Classification A B C
(µA) 100 ~ 170 150 ~ 240 210 ~ 350
I
DSS
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
Typical Characteristics
KSK596
VGS = -0.1V
VGS = -0.2V
VGS = -0.3V
I
DSS
500
450
400
350
300
250
200
A], DRAIN CURRENT
150
µ
[
D
I
100
50
VGS = 0
0
012345678910
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 1. ID-V
1.6
1.4
1.2
1.0
0.8
0.6
[mA], DRAIN CURRENT
D
I
0.4
0.2
0.0
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
DS
VGS[V], GATE-SOURCE VOLTAGE
= 200µA
VGS = -0.4V
VDS = 5V
1000
900
800
700
600
VGS = 0
500
400
300
[µA], DRAIN CURRENT
D
I
200
100
VGS = -0.1V
VGS = -0.2V
VGS = -0.3V
0
012345678910
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 2. ID-V
10
1
l [ms], FORWARD TR AN SF ER ADM ITTA NC E
FS
lY
0.1
0.1 1
I
DSS
VGS = -0.4V
VGS = -0.5V
DS
[mA], DRAIN CURRENT
I
DSS
= 500µA
VGS = -0.6V
VDS = 5V
VGS = 0
f=1kHz
Figure 3. ID-V
10
-
-
1
(off)[V], GAT E-SOUR C E CUT-OFF VOL TAGE
GS
0.1
-
V
0.1 1
Figure 5. VGS(off)-I
©2002 Fairchild Semiconductor Corporation
I
[mA], DRAIN CURRENT
DSS
GS
DSS
VDS = 5V
ID = 1µA
Figure 4. yFS-I
100
10
[pF], IN P U T C A P A CITANCE
iss
C
1
110
DSS
VDS[V], DRAIN-SOURCE VOLTAGE
Figure 6. C
ISS-VDS
Rev. B2, November 2002
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